公开(公告)号：US06197364B1

公开(公告)日：2001-03-06

申请号：US09373792

申请日：1999-08-09

申请人： Milan Paunovic ,  Christopher Jahnes

发明人： Milan Paunovic ,  Christopher Jahnes

IPC分类号： B05D512

CPC分类号： G11B5/858 ,  C23C18/36 ,  H01F41/24

摘要： This invention provides a method and solution for the electroless deposition of Co(P) with a designed coercivity via the programmed addition of supporting electrolytes comprising such sulfur containing compounds as sulfamic acid, potassium sulfate or sodium sulfate to a solution having a source of cobalt ions, a source of citrate ions, a buffering compound to stabilize the pH of the solution, a source of hypophosphite ions and sufficient hydroxide anions to obtain a pH of between about 7 and 9. The magnetized Co(P) material is useful in, for example, rigid magnetic storage disks, hard bias layers for MR thin film heads and magnetic detector tags.

摘要翻译： 本发明提供了一种通过向含有钴离子源的溶液中加入包含含硫化合物如氨基磺酸，硫酸钾或硫酸钠的支持电解质来设计具有设计矫顽力的Co（P）的无电沉积方法和解决方案 ，柠檬酸根离子源，用于稳定溶液pH的缓冲化合物，次磷酸根离子源和足够的氢氧化物阴离子，以获得约7至9的pH。磁化的Co（P）材料可用于 例如，刚性磁存储盘，用于MR薄膜头的硬偏置层和磁性检测器标签。

公开(公告)号：US20120103534A1

公开(公告)日：2012-05-03

申请号：US13349596

申请日：2012-01-13

申请人： JOHN M. COTTE ,  Nils D. Hoivik ,  Christopher Jahnes ,  Minhua Lu ,  Hongqing Zhang

发明人： JOHN M. COTTE ,  Nils D. Hoivik ,  Christopher Jahnes ,  Minhua Lu ,  Hongqing Zhang

IPC分类号： B32B38/10 ,  B32B7/02

CPC分类号： B81C1/00476 ,  G02B26/0841 ,  Y10T156/11 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/263

摘要： The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

摘要翻译： 通过降低牺牲层和MEMS结构之间的界面强度，使MEMS器件的光束弯曲最小化。

公开(公告)号：US20090258455A1

公开(公告)日：2009-10-15

申请号：US12101627

申请日：2008-04-11

申请人： John M. Cotte ,  Nils D. Hoivik ,  Christopher Jahnes ,  Minhua Lu ,  Hongqing Zhang

发明人： John M. Cotte ,  Nils D. Hoivik ,  Christopher Jahnes ,  Minhua Lu ,  Hongqing Zhang

IPC分类号： H01L21/00 ,  B32B17/00

CPC分类号： B81C1/00476 ,  G02B26/0841 ,  Y10T156/11 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/263

摘要： The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

摘要翻译： 通过降低牺牲层和MEMS结构之间的界面强度，使MEMS器件的光束弯曲最小化。

公开(公告)号：US20050037604A1

公开(公告)日：2005-02-17

申请号：US10949837

申请日：2004-09-24

申请人： Katherina Babich ,  Roy Carruthers ,  Timothy Dalton ,  Alfred Grill ,  Jeffrey Hedrick ,  Christopher Jahnes ,  Ebony Mays ,  Laurent Perraud ,  Sampath Purushothaman ,  Katherine Saenger

发明人： Katherina Babich ,  Roy Carruthers ,  Timothy Dalton ,  Alfred Grill ,  Jeffrey Hedrick ,  Christopher Jahnes ,  Ebony Mays ,  Laurent Perraud ,  Sampath Purushothaman ,  Katherine Saenger

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76831 ,  H01L21/7681 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76835 ,  H01L23/5222 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

摘要： A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.

摘要翻译： 描述了一种新颖的含气隙的互连布线结构，其在通孔级中结合有固体低k电介质，并且在布线层中结合了复合固体和气隙电介质。 还提供了形成这种互连结构的方法。 该方法很容易扩展到包含多个布线级别的互连结构，并且与双镶嵌后端（BEOL）处理兼容。

公开(公告)号：US06682786B1

公开(公告)日：2004-01-27

申请号：US09455671

申请日：1999-12-07

申请人： Shui-Chih Alan Lien ,  Alessandro C. Callegari ,  Paul S. Andry ,  Praveen Chaudhari ,  James A. Lacey ,  Sampath Purushothaman ,  James P. Doyle ,  Eileen A. Galligan ,  Richard A. John ,  John J. Ritsko ,  Yuhichi Momoi ,  Christopher Jahnes

发明人： Shui-Chih Alan Lien ,  Alessandro C. Callegari ,  Paul S. Andry ,  Praveen Chaudhari ,  James A. Lacey ,  Sampath Purushothaman ,  James P. Doyle ,  Eileen A. Galligan ,  Richard A. John ,  John J. Ritsko ,  Yuhichi Momoi ,  Christopher Jahnes

IPC分类号： G02F11337

CPC分类号： G02F1/133711 ,  G02F1/13378 ,  G02F1/1393 ,  Y10T428/1009 ,  Y10T428/1064

摘要： A liquid crystal display cell having liquid crystal molecules positioned in a vertical or a substantially vertical alignment is provided. The liquid crystal display cell includes at least two substantially homogeneous fluorinated alignment layers disposed on transparent electrodes; a liquid crystal layer of liquid crystal molecules disposed between the alignment layers; and, a means of applying voltage across the transparent electrodes. Methods for forming these liquid crystal display cells are also provided.

摘要翻译： 提供具有位于垂直或基本垂直取向的液晶分子的液晶显示单元。 液晶显示单元包括设置在透明电极上的至少两个基本均匀的氟化取向层; 设置在取向层之间的液晶分子的液晶层; 以及在透明电极上施加电压的手段。 还提供了形成这些液晶显示单元的方法。

公开(公告)号：US06489857B2

公开(公告)日：2002-12-03

申请号：US09727165

申请日：2000-11-30

申请人： Kevin Petrarca ,  Robert A. Groves ,  Brian Herbst ,  Christopher Jahnes ,  Richard Volant

发明人： Kevin Petrarca ,  Robert A. Groves ,  Brian Herbst ,  Christopher Jahnes ,  Richard Volant

IPC分类号： H01P110

CPC分类号： H01H59/0009 ,  H01H2001/0084

摘要： A micro electromechanical switch has a guidepost formed upon a substrate. A signal transmission line is formed on the substrate, with the signal transmission line having a gap and forming an open circuit. The switch further includes a switch body having a via opening formed therein, with the switch body being movably disposed along an length defined by the guide post. The guidepost is partially surrounded by the via opening.

公开(公告)号：US08163584B2

公开(公告)日：2012-04-24

申请号：US12101627

申请日：2008-04-11

申请人： Minhua Lu ,  Nils D. Hoivik ,  Christopher Jahnes ,  John M. Cotte ,  Hongqing Zhang

发明人： Minhua Lu ,  Nils D. Hoivik ,  Christopher Jahnes ,  John M. Cotte ,  Hongqing Zhang

IPC分类号： H01L21/00

CPC分类号： B81C1/00476 ,  G02B26/0841 ,  Y10T156/11 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/263

摘要： The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

摘要翻译： 通过降低牺牲层和MEMS结构之间的界面强度，使MEMS器件的光束弯曲最小化。

公开(公告)号：US20080066860A1

公开(公告)日：2008-03-20

申请号：US11871504

申请日：2007-10-12

申请人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

发明人： John Cotte ,  Nils Hoivik ,  Christopher Jahnes ,  Robert Wisnieff

IPC分类号： C23F1/00

CPC分类号： H01L21/306 ,  H01L21/32135 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76865 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/11 ,  H01L2224/13099 ,  H01L2924/01002 ,  H01L2924/01006 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01054 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/00

摘要： Disclosed are a method and a system for processing a semiconductor structure of the type including a substrate, a dielectric layer, and a TaN—Ta liner on the dielectric layer. The method comprises the step of using XeF2 to remove at least a portion of the TaN—Ta liner completely to the dielectric layer. In the preferred embodiments, the present invention uses XeF2 selective gas phase etching as alternatives to Ta—TaN Chemical Mechanical Polishing (CMP) as a basic “liner removal process” and as a “selective cap plating base removal process.” In this first use, XeF2 is used to remove the metal liner, TaN—Ta, after copper CMP. In the second use, the XeF2 etch is used to selectively remove a plating base (TaN—Ta) that was used to form a metal cap layer over the copper conductor.

摘要翻译： 公开了一种在电介质层上处理包括衬底，电介质层和TaN-Ta衬垫的类型的半导体结构的方法和系统。 该方法包括使用XeF 2将至少一部分TaN-Ta衬套完全去除到介电层的步骤。 在优选实施例中，本发明使用XeF2选择性气相蚀刻作为Ta-TaN化学机械抛光（CMP）的替代品作为基本的“衬垫去除工艺”，并且作为“选择性电镀镀层去除工艺”。 在第一次使用中，XeF2用于在铜CMP之后去除金属衬垫TaN-Ta。 在第二次使用中，XeF2蚀刻用于选择性地去除用于在铜导体上形成金属覆盖层的电镀基底（TaN-Ta）。

公开(公告)号：US20080048305A1

公开(公告)日：2008-02-28

申请号：US11932385

申请日：2007-10-31

申请人： Gareth Hougham ,  S. Chey ,  James Doyle ,  Xiao Liu ,  Christopher Jahnes ,  Paul Lauro ,  Nancy LaBianca ,  Michael Rooks

发明人： Gareth Hougham ,  S. Chey ,  James Doyle ,  Xiao Liu ,  Christopher Jahnes ,  Paul Lauro ,  Nancy LaBianca ,  Michael Rooks

IPC分类号： H01L23/495 ,  H01B13/00

CPC分类号： B81B3/0035 ,  H01L2924/0002 ,  Y10T428/249986 ,  H01L2924/00

摘要： A Negative Thermal Expansion system (NTEs) device for TCE compensation or CTE compensation in elastomer composites and conductive elastomer interconnects in microelectronic packaging. One aspect of the present invention provides a method for fabricating micromachine devices that have negative thermal expansion coefficients that can be made into a composite for manipulation of the TCE of the material. These devices and composites made with these devices are in the categories of materials called “smart materials” or “responsive materials.” Another aspect of the present invention provides microdevices comprised of dual opposed bilayers of material where the two bilayers are attached to one another at the peripheral edges only, and where the bilayers themselves are at a minimum stress conditions at a reference temperature defined by the temperature at which the bilayers are formed. These devices have the technologically useful property of volumetrically expanding upon lowering of the device temperature below the reference or processing temperature.

摘要翻译： 用于微电子封装中弹性体复合材料和导电弹性体互连的TCE补偿或CTE补偿的负热膨胀系统（NTE）装置。 本发明的一个方面提供了一种用于制造具有负热膨胀系数的微机械装置的方法，该热膨胀系数可以制成用于操纵材料的TCE的复合材料。 这些设备和这些设备制成的复合材料属于称为“智能材料”或“响应材料”的材料类别。 本发明的另一方面提供了由双重相对的双层材料构成的微器件，其中两个双层仅在外围边缘处彼此附接，并且其中双层本身处于由温度定义的参考温度下的最小应力条件 双层形成。 当器件温度降低到参考温度或加工温度以下时，这些器件具有技术上有用的特性。

公开(公告)号：US07202764B2

公开(公告)日：2007-04-10

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。