公开(公告)号：US08541854B2

公开(公告)日：2013-09-24

申请号：US13349596

申请日：2012-01-13

申请人： John M. Cotte ,  Nils D. Hoivik ,  Christopher Jahnes ,  Minhua Lu ,  Hongqing Zhang

发明人： John M. Cotte ,  Nils D. Hoivik ,  Christopher Jahnes ,  Minhua Lu ,  Hongqing Zhang

IPC分类号： H01L21/00

CPC分类号： B81C1/00476 ,  G02B26/0841 ,  Y10T156/11 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/263

摘要： The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

摘要翻译： 通过降低牺牲层和MEMS结构之间的界面强度，使MEMS器件的光束弯曲最小化。

公开(公告)号：US20090258455A1

公开(公告)日：2009-10-15

申请号：US12101627

申请日：2008-04-11

申请人： John M. Cotte ,  Nils D. Hoivik ,  Christopher Jahnes ,  Minhua Lu ,  Hongqing Zhang

发明人： John M. Cotte ,  Nils D. Hoivik ,  Christopher Jahnes ,  Minhua Lu ,  Hongqing Zhang

IPC分类号： H01L21/00 ,  B32B17/00

CPC分类号： B81C1/00476 ,  G02B26/0841 ,  Y10T156/11 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/263

摘要： The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

摘要翻译： 通过降低牺牲层和MEMS结构之间的界面强度，使MEMS器件的光束弯曲最小化。

公开(公告)号：US08163584B2

公开(公告)日：2012-04-24

申请号：US12101627

申请日：2008-04-11

申请人： Minhua Lu ,  Nils D. Hoivik ,  Christopher Jahnes ,  John M. Cotte ,  Hongqing Zhang

发明人： Minhua Lu ,  Nils D. Hoivik ,  Christopher Jahnes ,  John M. Cotte ,  Hongqing Zhang

IPC分类号： H01L21/00

CPC分类号： B81C1/00476 ,  G02B26/0841 ,  Y10T156/11 ,  Y10T428/24942 ,  Y10T428/24975 ,  Y10T428/263

摘要： The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.

摘要翻译： 通过降低牺牲层和MEMS结构之间的界面强度，使MEMS器件的光束弯曲最小化。

公开(公告)号：US07581314B2

公开(公告)日：2009-09-01

申请号：US11358823

申请日：2006-02-21

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

IPC分类号： H01K3/10

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US07202764B2

公开(公告)日：2007-04-10

申请号：US10604278

申请日：2003-07-08

申请人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

发明人： Hariklia Deligianni ,  Panayotis Andricacos ,  L. Paivikki Buchwalter ,  John M. Cotte ,  Christopher Jahnes ,  Mahadevaiyer Krishnan ,  John H. Magerlein ,  Kenneth Stein ,  Richard P. Volant ,  James A. Tornello ,  Jennifer Lund

IPC分类号： H01H51/22

CPC分类号： H01H59/0009 ,  H01H2001/0052 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T29/49204

摘要： A semiconductor micro-electromechanical system (MEMS) switch provided with noble metal contacts that act as an oxygen barrier to copper electrodes is described. The MEMS switch is fully integrated into a CMOS semiconductor fabrication line. The integration techniques, materials and processes are fully compatible with copper chip metallization processes and are typically, a low cost and a low temperature process (below 400° C.). The MEMS switch includes: a movable beam within a cavity, the movable beam being anchored to a wall of the cavity at one or both ends of the beam; a first electrode embedded in the movable beam; and a second electrode embedded in an wall of the cavity and facing the first electrode, wherein the first and second electrodes are respectively capped by the noble metal contact.

摘要翻译： 描述了提供有作为铜电极的氧阻隔的贵金属触点的半导体微机电系统（MEMS）开关。 MEMS开关完全集成到CMOS半导体制造线中。 集成技术，材料和工艺完全兼容铜芯片金属化工艺，通常是低成本和低温工艺（低于400℃）。 MEMS开关包括：在空腔内的可移动光束，可移动光束在光束的一端或两端锚定到空腔的壁; 嵌入可移动光束中的第一电极; 以及第二电极，其嵌入在所述空腔的壁中并且面向所述第一电极，其中所述第一和第二电极分别被所述贵金属接触物覆盖。

公开(公告)号：US20120325316A1

公开(公告)日：2012-12-27

申请号：US13604230

申请日：2012-09-05

申请人： John M. Cotte ,  Laura L. Kosbar ,  Deborah A. Neumayer ,  Xiaoyan Shao

发明人： John M. Cotte ,  Laura L. Kosbar ,  Deborah A. Neumayer ,  Xiaoyan Shao

IPC分类号： H01L31/0232

CPC分类号： H01L31/02168 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A method to determine the cleanness of a semiconductor substrate and the quantity/density of pin holes that may exist within a patterned antireflective coating (ARC) is provided. Electroplating is employed to monitor the changes in the porosity of the ARC caused by the pin holes during solar cell manufacturing. In particular, electroplating a metal or metal alloy to form a metallic grid on an exposed front side surface of a substrate also fills the pin holes. The quantity/density of metallic filled pin holes (and hence the number of pin holes) in the patterned ARC can then be determined.

摘要翻译： 提供了确定半导体衬底的清洁度的方法以及可能存在于图案化抗反射涂层（ARC）内的针孔的数量/密度。 使用电镀来监测由太阳能电池制造过程中的针孔引起的ARC孔隙度的变化。 特别地，在基板的暴露的前侧表面上电镀金属或金属合金以形成金属网格也填充针孔。 然后可以确定图案化的ARC中的金属填充针孔的数量/密度（以及因此的孔的数量）。

公开(公告)号：US20120322243A1

公开(公告)日：2012-12-20

申请号：US13596593

申请日：2012-08-28

申请人： Veeraraghavan S. Basker ,  John M. Cotte ,  Hariklia Deligianni ,  Matteo Flotta

发明人： Veeraraghavan S. Basker ,  John M. Cotte ,  Hariklia Deligianni ,  Matteo Flotta

IPC分类号： H01L21/326

CPC分类号： C25D5/54 ,  C25D5/006 ,  C25D5/02 ,  C25D7/123 ,  C25D11/005 ,  C25D11/024 ,  C25D17/001 ,  C25F3/14 ,  H01L21/28079 ,  H01L21/2885

摘要： An electrochemical process comprising: providing a 125 mm or larger semiconductor wafer in electrical contact with a conducting surface, wherein at least a portion of the semiconductor wafer is in contact with an electrolytic solution, said semiconductor wafer functioning as a first electrode; providing a second electrode in the electrolytic solution, the first and second electrode connected to opposite ends of an electric power source; and irradiating a surface of the semiconductor wafer with a light source as an electric current is applied across the first and the second electrodes. The invention is also directed to an apparatus including a light source and electrochemical components to conduct the electrochemical process.

公开(公告)号：US08263497B2

公开(公告)日：2012-09-11

申请号：US12352718

申请日：2009-01-13

申请人： Paul S. Andry ,  John M. Cotte ,  Michael F. Lofaro ,  Edmund J. Sprogis ,  James A. Tornello ,  Cornelia K. Tsang

发明人： Paul S. Andry ,  John M. Cotte ,  Michael F. Lofaro ,  Edmund J. Sprogis ,  James A. Tornello ,  Cornelia K. Tsang

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05184 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/131 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： An assembly including a main wafer having a body with a front side and a back side and a plurality of blind electrical vias terminating above the back side, and a handler wafer, is obtained. A step includes exposing the blind electrical vias to various heights on the back side. Another step involves applying a first chemical mechanical polish process to the back side, to open any of the surrounding insulator adjacent the end regions of the cores remaining after the exposing step, and to co-planarize the via conductive cores, the surrounding insulator adjacent the side regions of the cores, and the body of the main wafer. Further steps include etching the back side to produce a uniform standoff height of each of the vias across the back side; depositing a dielectric across the back side; and applying a second chemical mechanical polish process to the back side.

摘要翻译： 获得包括具有前侧和后侧的主体的主晶片和终止于背面的多个盲电通路的组件和处理器晶片。 一个步骤包括将盲电通孔暴露在背面的各种高度上。 另一个步骤涉及将第一化学机械抛光工艺应用于背面，以便打开暴露步骤之后残留的芯的端部附近的任何周围的绝缘体，并且将通孔导电芯，邻近的绝缘体 芯的侧面区域和主晶片的主体。 进一步的步骤包括蚀刻背面以产生穿过背面的每个通路的均匀间隔高度; 在背面沉积电介质; 并向后侧施加第二化学机械抛光工艺。

公开(公告)号：US07843067B2

公开(公告)日：2010-11-30

申请号：US12053969

申请日：2008-03-24

申请人： John M. Cotte ,  Balasubramanian Haran ,  Christopher C. Parks ,  Xiaoyan Shao ,  Eva E. Simonyi

发明人： John M. Cotte ,  Balasubramanian Haran ,  Christopher C. Parks ,  Xiaoyan Shao ,  Eva E. Simonyi

IPC分类号： H01L23/48

CPC分类号： H01L21/76843 ,  H01L21/2885 ,  H01L21/76873 ,  H01L21/76879 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/26 ,  H01L2924/00

摘要： The present disclosure relates to a microelectronic structure and the manufacture of the microelectronic structure. Specifically, the disclosure relates to an interconnect barrier layer between a rhodium contact structure and a copper interconnect structure in a microelectronic structure. The microelectronic structure provides for low resistance in microelectronic devices.

摘要翻译： 本公开涉及微电子结构和微电子结构的制造。 具体地，本公开涉及在微电子结构中的铑接触结构和铜互连结构之间的互连势垒层。 微电子结构在微电子器件中提供低电阻。

公开(公告)号：US07829427B2

公开(公告)日：2010-11-09

申请号：US12612743

申请日：2009-11-05

申请人： Daniel C. Edelstein ,  Panayotis C. Andricacos ,  John M. Cotte ,  Hariklia Deligianni ,  John H. Magerlein ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Richard P. Volant

发明人： Daniel C. Edelstein ,  Panayotis C. Andricacos ,  John M. Cotte ,  Hariklia Deligianni ,  John H. Magerlein ,  Kevin S. Petrarca ,  Kenneth J. Stein ,  Richard P. Volant

IPC分类号： H01L21/20

CPC分类号： H01L24/12 ,  H01L23/5227 ,  H01L23/53238 ,  H01L24/03 ,  H01L24/05 ,  H01L27/08 ,  H01L28/10 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05014 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05084 ,  H01L2224/05555 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method of forming an inductor. The method including: (a) forming a dielectric layer on a top surface of a substrate; after (a), (b) forming a lower trench in the dielectric layer; after (b), (c) forming a resist layer on a top surface of the dielectric layer; after (c), (d) forming an upper trench in the resist layer, the upper trench aligned to the lower trench, a bottom of the upper trench open to the lower trench; and after (d), (e) completely filling the lower trench and at least partially filling the upper trench with a conductor in order to form the inductor.

摘要翻译： 一种形成电感器的方法。 该方法包括：（a）在基板的顶表面上形成电介质层; （a）之后，（b）在介电层中形成下沟槽; （b）之后，（c）在介电层的顶表面上形成抗蚀剂层; 在（c）之后，（d）在抗蚀剂层中形成上沟槽，上沟槽与下沟槽对准，上沟槽的底部通向下沟槽; 在（d）之后，（e）完全填充下沟槽并且用导体至少部分地填充上沟槽以形成电感器。