摘要:
A color reproduction apparatus may include a white balance performing unit to perform white balance with respect to an image obtained from a sensor using a white balance gain, an image restoring unit to restore an RGB image from the white-balanced image by interpolating a color filter array image, a first color corrector to correct a color distortion caused by a light source by applying first correction data, and a second color corrector to correct a color distortion caused by a characteristic of a sensor by applying second correction data.
摘要:
A microelectronic structure includes a conductive pad on a substrate. The conductive pad includes first and second openings extending therethrough. A first conductive via on the conductive pad extends through the first opening in the conductive pad into the substrate. A second conductive via on the conductive pad adjacent the first conductive via extends through the second opening in the conductive pad into the substrate. At least one of the conductive vias may be electrically isolated from the conductive pad. Related devices and fabrication methods are also discussed.
摘要:
Disclosed are examples of an interworking system and related methods. The interworking system can be configured to implement a session initiation protocol (SIP) message routing method that may include checking a transmitting subject and a transmission method of a SIP message, applying a network address translation based on the checked message's transmitting subject and its transmission method, and specifying the address of the node selected based on the checked message's transmitting subject in routing path information.
摘要:
A semiconductor device includes a semiconductor substrate and a via electrode. The via electrode has a first portion on the substrate and extends towards the substrate and has a plurality of spikes that extends from the first portion into the substrate, each of the spikes being spaced apart form one another.
摘要:
A microelectronic device includes a substrate having a trench extending therethrough between an active surface thereof and an inactive surface thereof opposite the active surface, a conductive via electrode extending through the substrate between sidewalls of the trench, and an insulating layer extending along the inactive surface of the substrate outside the trench and extending at least partially into the trench. The insulating layer defines a gap region in the trench that separates the substrate and the via electrode. Related devices and methods of fabrication are also discussed.
摘要:
Provided is a device for tracking polarizations. A receiving polarization tracking device includes a feeder for finding vertical and horizontal vector components by receiving vertical and horizontal polarizations, a polarization estimator for estimating distortion of polarizations using the vertical and horizontal vector components outputted from the feeder, a polarization controller for controlling amplitudes and phases of vertical and horizontal polarizations based on information about the estimated distortion from the polarization estimator and an output signal from the receiving polarization tracking device, and a combiner for combining the vertical and horizontal polarizations controlled from the polarization controller.
摘要:
In a semiconductor device package having a stress relief spacer, and a manufacturing method thereof, metal interconnect fingers extend from the body of a chip provide for chip interconnection. The metal fingers are isolated from the body of the chip by a stress-relief spacer. In one example, such isolation takes the form of an air gap. In another example, such isolation takes the form of an elastomer material. In either case, mismatch in coefficient of thermal expansion between the metal interconnect fingers and the body of the chip is avoided, alleviating the problems associated with cracking and delamination, and leading to improved device yield and device reliability.
摘要:
Provided are an apparatus for controlling handover between heterogeneous networks, a method of performing handover between heterogeneous networks in a mobile router, and a mobile router. The method includes determining whether a handover to a network employing a different method from a network to which the mobile router belongs is required based on information prestored in the mobile router, the network to which the mobile router belongs determined by current location information of the mobile router and performing the handover according to the result of the determination. Mobility detection time can be reduced by applying the handover technique between wireless/satellite networks based on link trigger and location to a mobile router moving at high speed. Thus, service interruption can be prevented regardless of movement speed, even in a satellite shadow region such as a station.
摘要:
Provided is a method for handover between heterogeneous networks using a link trigger signal in a multi-interface mobile router. The method includes: maintaining a state of a second network access interface in a sleep state, activating a first network access interface, receiving and transmitting the first network service to a subordinate node in the mobile router located in a first network; when the mobile router senses a second network link-up trigger signal while moving to the second network, changing the state of the second network access interface into an active state and performing handover; and receiving a second network service through the activated second network access interface in the mobile router performing the handover and transmitting the second network service to the subordinate node.
摘要:
Provided is a semiconductor device. The semiconductor device may include a substrate and a stacked insulation layer on a sidewall of an opening which penetrates the substrate. The stacked insulation layer can include at least one first insulation layer and at least one second insulation layer whose dielectric constant is different than that of the first insulation layer. One insulation layer may be a polymer and one insulation layer may be a silicon based insulation layer. The insulation layers may be uniform in thickness or may vary as a distance from the substrate changes.