公开(公告)号：US20110008915A1

公开(公告)日：2011-01-13

申请号：US12500573

申请日：2009-07-09

申请人： Jean Pierre Nozieres ,  Jason Reid

发明人： Jean Pierre Nozieres ,  Jason Reid

IPC分类号： H01L21/28

CPC分类号： H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

摘要： Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

摘要翻译： 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。

公开(公告)号：US07622399B2

公开(公告)日：2009-11-24

申请号：US10796286

申请日：2004-03-10

申请人： Jason Reid ,  Nigel Hackera ,  Nina Pirilä ,  Juha Rantala ,  William McLaughlin

发明人： Jason Reid ,  Nigel Hackera ,  Nina Pirilä ,  Juha Rantala ,  William McLaughlin

IPC分类号： H01L21/469

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02282 ,  H01L21/02318 ,  H01L21/3121 ,  Y10T428/31663 ,  Y10T428/31678

摘要： A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in which the material is heated to a second temperature by increasing the temperature at an average rate of at least 1° C. per second. As a result a densified, dielectric material is obtained which has a low dielectric constant.

摘要翻译： 一种形成低介电常数结构的方法。 该方法包括在第一温度下提供具有第一介电常数和第一弹性模量的介电材料，并通过热固化工艺固化介电材料，其中通过以平均值升高温度将材料加热至第二温度 速率至少为1℃/秒。 结果获得了具有低介电常数的致密的介电材料。

公开(公告)号：US20070077779A1

公开(公告)日：2007-04-05

申请号：US11606941

申请日：2006-12-01

申请人： Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

发明人： Juha Rantala ,  Jason Reid ,  T. Teemu Tormanen ,  Nungavram Viswanathan ,  Arto Maaninen

IPC分类号： H01L21/31

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L2221/1031

摘要： A method for making an integrated circuit is disclosed as comprising depositing alternating regions of electrically conductive and dielectric materials on a substrate, wherein an area of dielectric material is formed by: a silane precursor having a fully or partially fluorinated first organic group comprising an unsaturated carbon-carbon double bond, the fully or partially fluorinated organic group bound to silicon in the silane precursor; forming from the silane precursor a hybrid organic-inorganic material having a molecular weight of at least 500 on a substrate; and increasing the molecular weight of the hybrid material by exposure to heat, electromagnetic radiation or electron beam so as to break the unsaturated carbon-carbon double bond and cross link via the fully or partially fluorinated organic group. Also disclosed is a method for making an integrated circuit is disclosed as comprising: reacting a compound of the general formula X3MOR33, where X3 is a halogen, M is silicon, and OR3 is alkoxy; with a compound of the general formula R1M1; where R1 is selected from alkyl, alkenyl, aryl and alkynyl and wherein R1 is partially or fully fluorinated; and M1 is an element from group I of the periodic table; so as to form a compound of the general formula R1MOR33; hydrolyzing and condensing R1MOR33 so as to form a hybrid organic-inorganic material with a molecular weight of at least 500; depositing the hybrid organic-inorganic material on a substrate as an insulator in an integrated circuit; depositing, before or after depositing the hybrid material, an electrically conductive material within the integrated circuit.

摘要翻译： 公开了一种用于制造集成电路的方法，包括在衬底上沉积导电和介电材料的交替区域，其中介电材料的区域通过以下形成：具有完全或部分氟化的第一有机基团的硅烷前体，其包含不饱和碳 碳双键，全部或部分氟化的有机基团与硅烷前体中的硅键合; 从硅烷前体形成在基材上分子量至少为500的杂化有机 - 无机材料; 并且通过暴露于热，电磁辐射或电子束来增加杂化材料的分子量，以便通过完全或部分氟化的有机基团破坏不饱和碳 - 碳双键和交联。 还公开了一种用于制造集成电路的方法，其包括：使通式X3MOR3 3的化合物，其中X3是卤素，M是硅，OR3是烷氧基; 与通式R 1 M 1的化合物反应; 其中R 1选自烷基，烯基，芳基和炔基，并且其中R 1部分或完全氟化; M1是周期表第I组元素; 以形成通式R 1 MOR 3 3的化合物; 水解和冷凝R1MOR3 3N，以形成分子量至少为500的杂化有机 - 无机材料; 将杂化有机 - 无机材料沉积在集成电路中作为绝缘体的衬底上; 在沉积杂化材料之前或之后沉积集成电路内的导电材料。

公开(公告)号：US20050164127A1

公开(公告)日：2005-07-28

申请号：US11041834

申请日：2005-01-24

申请人： Jason Reid ,  Nungavaram Viswanathan

发明人： Jason Reid ,  Nungavaram Viswanathan

IPC分类号： B81B3/00 ,  G03C5/00

CPC分类号： B81C1/00476 ,  B81B2201/045 ,  B81C2201/0108 ,  B81C2201/112 ,  B81C2201/117 ,  B82Y30/00

摘要： A method comprises depositing an organic material on a substrate; depositing additional material different from the organic material after depositing the organic material; and removing the organic material with a compressed fluid. Also disclosed is a method comprising: providing an organic layer on a substrate; after providing the organic layer, providing one or more layers of a material different than the organic material of the organic layer; removing the organic layer with a compressed fluid; and providing an anti-stiction agent with a compressed fluid to material remaining after removal of the organic layer.

公开(公告)号：US5622893A

公开(公告)日：1997-04-22

申请号：US283454

申请日：1994-08-01

申请人： Scott R. Summerfelt ,  Jason Reid ,  Marc Nicolet ,  Elzbieta Kolawa

发明人： Scott R. Summerfelt ,  Jason Reid ,  Marc Nicolet ,  Elzbieta Kolawa

IPC分类号： H01G4/33 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/10 ,  H01L27/105 ,  H01L27/108 ,  H01L29/92 ,  H01L21/283

CPC分类号： H01L28/60 ,  H01L28/55 ,  H01L28/75

摘要： A preferred embodiment of this invention comprises an oxidizable layer (e.g. TiN 50), an noble-metal-insulator-alloy barrier layer (e.g. Pd-Si-N 34) overlying the oxidizable layer, an oxygen stable layer (e.g. platinum 36) overlying the noble-metal-insulator-alloy layer, and a high-dielectric-constant material layer (e.g. barium strontium titanate 38) overlying the oxygen stable layer. The noble-metal-insulator-alloy barrier layer substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxidizable layer.

摘要翻译： 本发明的优选实施方案包括可氧化层（例如TiN 50），覆盖在可氧化层上的贵金属 - 绝缘体 - 合金阻挡层（例如Pd-Si-N 34），上层的氧稳定层（例如铂36） 贵金属 - 绝缘体合金层和覆盖氧稳定层的高介电常数材料层（例如钛酸钡锶38）。 贵金属 - 绝缘体 - 合金阻挡层基本上抑制氧扩散到可氧化层，从而最小化可氧化层的有害氧化。

公开(公告)号：US20120225499A1

公开(公告)日：2012-09-06

申请号：US13468936

申请日：2012-05-10

申请人： Jean Pierre Nozieres ,  Jason Reid

发明人： Jean Pierre Nozieres ,  Jason Reid

IPC分类号： H01L21/8246

CPC分类号： H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

摘要： Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

摘要翻译： 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。

公开(公告)号：US20120008383A1

公开(公告)日：2012-01-12

申请号：US13154912

申请日：2011-06-07

申请人： Erwan Gapihan ,  Kenneth Mackay ,  Jason Reid

发明人： Erwan Gapihan ,  Kenneth Mackay ,  Jason Reid

IPC分类号： G11C11/15

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/1675 ,  H01F10/3254

摘要： The present disclosure concerns a magnetic element to be written using a thermally-assisted switching write operation comprising a magnetic tunnel junction formed from a tunnel barrier being disposed between first and second magnetic layers, said second magnetic layer having a second magnetization which direction can be adjusted during a write operation when the magnetic tunnel junction is heated at a high threshold temperature; an upper current line connected at the upper end of the magnetic tunnel junction; and a strap portion extending laterally and connected to the bottom end of the magnetic tunnel junction; the magnetic device further comprising a bottom thermal insulating layer extending substantially parallel to the strap portion and arranged such that the strap portion is between the magnetic tunnel junction and the bottom thermal insulating layer. The magnetic element allows for reducing heat losses during the write operation and has reduced power consumption.

摘要翻译： 本公开涉及使用热辅助切换写入操作来写入的磁性元件，其包括由隧道势垒形成的磁性隧道结，所述隧道势垒设置在第一和第二磁性层之间，所述第二磁性层具有可以调整该方向的第二磁化 在磁隧道结被加热到高阈值温度的写操作期间; 连接在磁隧道结上端的上电流线; 以及横向延伸并连接到磁性隧道结的底端的带部分; 磁性装置还包括基本上平行于带部分延伸的底部绝热层，并且布置成使得带部分在磁性隧道结和底部绝热层之间。 磁性元件允许在写入操作期间减少热损失并降低功耗。

公开(公告)号：US20050032357A1

公开(公告)日：2005-02-10

申请号：US10886061

申请日：2004-07-08

申请人： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

发明人： Juha Rantala ,  Nigel Hacker ,  Jason Reid ,  William McLaughlin ,  Teemu Tormanen

IPC分类号： G01N27/00

CPC分类号： H01L21/3122 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76835 ,  H01L23/5329 ,  H01L2221/1031 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/00

摘要： An integrated circuit device is provided having a substrate and areas of electrically insulating and electrically conductive material, where the electrically insulating material is a hybrid organic-inorganic material that requires no or minimal CMP and which can withstand subsequent processing steps at temperatures of 450° C. or more.

摘要翻译： 提供了具有基板和电绝缘和导电材料的区域的集成电路器件，其中电绝缘材料是不需要或最小CMP的混合有机 - 无机材料，并且其可以承受450℃温度下的后续加工步骤 。 或者更多。

公开(公告)号：US08907390B2

公开(公告)日：2014-12-09

申请号：US12944663

申请日：2010-11-11

申请人： Jason Reid

发明人： Jason Reid

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01F10/32 ,  G11C11/16 ,  B82Y25/00 ,  H01L43/08

CPC分类号： G11C11/16 ,  B82Y25/00 ,  G11C11/161 ,  H01F10/3254 ,  H01L43/08

摘要： Disclosed herein is a thermally-assisted magnetic tunnel junction structure including a thermal barrier. The thermal barrier is composed of a cermet material in a disordered form such that the thermal barrier has a low thermal conductivity and a high electric conductivity. Compared to conventional magnetic tunnel junction structures, the disclosed structure can be switched faster and has improved compatibility with standard semiconductor fabrication processes.

摘要翻译： 本文公开了包括热障的热辅助磁隧道结结构。 热障由无定形形式的金属陶瓷材料构成，使得热障具有低导热性和高导电性。 与传统的磁性隧道结结构相比，所公开的结构可以更快地切换并改善与标准半导体制造工艺的兼容性。

公开(公告)号：US08409880B2

公开(公告)日：2013-04-02

申请号：US13468936

申请日：2012-05-10

申请人： Jean Pierre Nozieres ,  Jason Reid

发明人： Jean Pierre Nozieres ,  Jason Reid

IPC分类号： H01L21/00

CPC分类号： H01L43/02 ,  G11C11/16 ,  H01L21/00 ,  H01L27/00 ,  H01L43/12

摘要： Disclosed herein is a method of forming electronic device having thin-film components by using trenches. One or more of thin-film components is formed by depositing a thin-film in the trench followed by processing the deposited thin-film to have the desired thickness.

摘要翻译： 本文公开了通过使用沟槽形成具有薄膜部件的电子器件的方法。 通过在沟槽中沉积薄膜而形成薄膜成分中的一种或多种，​​然后将沉积的薄膜加工成具有所需的厚度。