公开(公告)号：US5664778A

公开(公告)日：1997-09-09

申请号：US574077

申请日：1995-12-18

申请人： Misao Kikuchi ,  Kunimasa Imasono ,  Yasushi Kitagawa ,  Kenji Noma ,  Tadayuki Tahara ,  Yoshinori Saito ,  Hisayoshi Hayasaka ,  Kiyotaka Yago ,  Kenji Kawasaki

发明人： Misao Kikuchi ,  Kunimasa Imasono ,  Yasushi Kitagawa ,  Kenji Noma ,  Tadayuki Tahara ,  Yoshinori Saito ,  Hisayoshi Hayasaka ,  Kiyotaka Yago ,  Kenji Kawasaki

IPC分类号： G06K17/00 ,  A63F13/00 ,  G06F15/00 ,  G07F17/16 ,  H01R31/06 ,  H04H20/76 ,  H04L29/06 ,  H04L29/08 ,  A63F9/00

CPC分类号： A63F13/95 ,  A63F13/12 ,  A63F13/35 ,  G06Q30/02 ,  G07F17/16 ,  H04L29/06 ,  H04L67/16 ,  H04L69/329 ,  A63F2300/206 ,  A63F2300/409 ,  A63F2300/50 ,  H04L67/38

摘要： A network service system capable of providing economical services comprises a plurality of host computers connected to a network for providing services through the network and an information processing terminal connected to the network. The information processing terminal identifies a service identifier, provided in a storage medium for network service, for identifying a type of a network service when the storage medium is attached, connects the line to the host computer which corresponds to the identified service identifier and receives the network service from the line-connected host computer.

摘要翻译： 能够提供经济服务的网络服务系统包括连接到网络的多个主机，用于通过网络提供服务，以及连接到网络的信息处理终端。 信息处理终端识别在用于网络服务的存储介质中提供的服务标识符，用于在附加存储介质时识别网络服务的类型，将该线路连接到与所识别的服务标识符相对应的主计算机，并接收 来自线路连接主机的网络服务。

公开(公告)号：US09190453B2

公开(公告)日：2015-11-17

申请号：US14622027

申请日：2015-02-13

申请人： Takashi Nakazawa ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Kenji Noma

发明人： Takashi Nakazawa ,  Yoshiaki Asao ,  Takeshi Kajiyama ,  Kenji Noma

IPC分类号： H01L43/00 ,  H01L27/00 ,  H01L27/22 ,  H01L43/12 ,  H01L27/24 ,  H01L43/08 ,  H01L43/02 ,  G11C11/16

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1655 ,  H01L27/2463 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory including an isolation region with an insulator in a trench is disclosed. The isolation region defines active areas extending in a 1st direction and having 1st and 2nd active areas, an isolation region extending in a 2nd direction perpendicular to the 1st direction exists between the 1st and 2nd active areas. 1st and 2nd word lines extending in the 2nd direction are buried in a surface of semiconductor substrate. 1st and 2nd select transistors connected to the word lines are on the 1st active area. 1st and 2nd variable resistance elements connected to drain regions of the 1st and 2nd select transistors are on the 1st active area.

公开(公告)号：US20150263265A1

公开(公告)日：2015-09-17

申请号：US14479192

申请日：2014-09-05

申请人： Masatoshi YOSHIKAWA ,  Hiroaki YODA ,  Shuichi TSUBATA ,  Kenji NOMA ,  Tatsuya KISHI ,  Satoshi SETO ,  Kazuhiro TOMIOKA

发明人： Masatoshi YOSHIKAWA ,  Hiroaki YODA ,  Shuichi TSUBATA ,  Kenji NOMA ,  Tatsuya KISHI ,  Satoshi SETO ,  Kazuhiro TOMIOKA

IPC分类号： H01L43/02 ,  H01L43/10 ,  H01L43/08

CPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the stacked structure, and an interface layer provided at an interface between the stacked structure and the protective insulating film. The interface layer contains a predetermined element which is not contained in the magnetic element or the protective insulating film.

摘要翻译： 根据一个实施例，磁存储器件包括堆叠结构，其包括磁性元件，覆盖层叠结构的保护绝缘膜以及设置在堆叠结构和保护绝缘膜之间的界面处的界面层。 界面层包含不包含在磁性元件或保护绝缘膜中的预定元件。

公开(公告)号：US20140284738A1

公开(公告)日：2014-09-25

申请号：US14018337

申请日：2013-09-04

申请人： Takashi NAKAZAWA ,  Yoshiaki ASAO ,  Takeshi KAJIYAMA ,  Kenji NOMA

发明人： Takashi NAKAZAWA ,  Yoshiaki ASAO ,  Takeshi KAJIYAMA ,  Kenji NOMA

IPC分类号： H01L43/02 ,  H01L43/12

CPC分类号： H01L27/228 ,  G11C11/161 ,  G11C11/1655 ,  H01L27/2463 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory including an isolation region with an insulator in a trench is disclosed. The isolation region defines active areas extending in a 1st direction and having 1st and 2nd active areas, an isolation region extending in a 2nd direction perpendicular to the 1st direction exists between the 1st and 2nd active areas. 1st and 2nd word lines extending in the 2nd direction are buried in a surface of semiconductor substrate. 1st and 2nd select transistors connected to the word lines are on the 1st active area. 1st and 2nd variable resistance elements connected to drain regions of the 1st and 2nd select transistors are on the 1st active area.

摘要翻译： 根据一个实施例，公开了一种包括在沟槽中具有绝缘体的隔离区的磁存储器。 隔离区域限定在第一方向上延伸并且具有第一和第二有源区域的有源区域，在第一和第二有效区域之间存在沿垂直于第一方向的第二方向延伸的隔离区域。 在第二方向上延伸的第一和第二字线被埋在半导体衬底的表面中。 连接到字线的第一和第二选择晶体管在第一有效区域。 连接到第一和第二选择晶体管的漏极区的第一和第二可变电阻元件在第一有效区上。

公开(公告)号：US20060187592A1

公开(公告)日：2006-08-24

申请号：US11409699

申请日：2006-04-24

申请人： Kenji Noma

发明人： Kenji Noma

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B2005/3996 ,  H01F10/3272 ,  H01L43/10

摘要： A soft magnetic layer is made of nickel iron alloy containing crystals of the face-centered cubic lattice and crystals of the body-centered cubic lattice. The face-centered cubic lattice serves to establish a soft magnetic property in the nickel iron alloy. The body-centered cubic lattice contributes to reduction in the electric resistance of the magnetoresistive film as well as to improvement of the magnetoresistive ratio of the magnetoresistive film. Even if the magnetoresistive film is further reduced in size, the magnetoresistive film can sufficiently be prevented from suffering from an increase in the temperature. Even if a sensing current of a larger current value is supplied to the magnetoresistive film, the magnetoresistive film is reliably prevented from deterioration in the characteristics as well as destruction.

公开(公告)号：US20130056349A1

公开(公告)日：2013-03-07

申请号：US13600812

申请日：2012-08-31

申请人： Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Kenji NOMA ,  Tadashi KAI ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Katsuya NISHIYAMA ,  Koji UEDA ,  Daisuke WATANABE ,  Hiroaki YODA ,  Satoru SANO ,  Yoshihiro NISHIMURA ,  Takayuki WATANABE ,  Yuzo KATO ,  Akira UEKI

发明人： Eiji KITAGAWA ,  Tadaomi DAIBOU ,  Kenji NOMA ,  Tadashi KAI ,  Koji YAMAKAWA ,  Toshihiko NAGASE ,  Katsuya NISHIYAMA ,  Koji UEDA ,  Daisuke WATANABE ,  Hiroaki YODA ,  Satoru SANO ,  Yoshihiro NISHIMURA ,  Takayuki WATANABE ,  Yuzo KATO ,  Akira UEKI

IPC分类号： C23C14/08 ,  C23C14/35

CPC分类号： C23C14/082 ,  C23C14/3414 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

摘要： Provided are a sputtering target including a target main body 10 that has MgO as a main component and a thickness of 3 mm or smaller, and a method of manufacturing a magnetic memory using the sputtering target which improves an MR ratio.

摘要翻译： 提供一种溅射靶，其包括具有MgO作为主要成分并且厚度为3mm以下的靶主体10以及使用该溅射靶的磁性存储器的制造方法，其提高MR比。

公开(公告)号：US20120195116A1

公开(公告)日：2012-08-02

申请号：US13236853

申请日：2011-09-20

申请人： Kenji NOMA

发明人： Kenji NOMA

IPC分类号： G11C16/04 ,  H01L21/336 ,  G11C11/00 ,  H01L21/8246

CPC分类号： G11C11/16 ,  G11C11/005 ,  G11C11/161 ,  G11C13/0002 ,  G11C16/04 ,  G11C29/789 ,  H01L21/28273 ,  H01L27/11526 ,  H01L27/222 ,  H01L29/66825 ,  H01L29/7881

摘要： According to one embodiment, a method is disclosed for manufacturing a nonvolatile memory device. The method can include forming a second stacked body, removing the second stacked body formed in a region where a first memory unit will be formed, forming a first stacked body, and removing the first stacked body formed in a region where a second memory unit will be formed. The method can include simultaneously processing the first stacked body formed in a region where the first memory unit will be formed and the second stacked body formed in a region where the second memory unit will be formed to form a memory cell of the first memory unit from the first stacked body and form a memory cell of the second memory unit from the second stacked body.

摘要翻译： 根据一个实施例，公开了一种用于制造非易失性存储器件的方法。 该方法可以包括形成第二层叠体，去除形成在第一存储单元的区域中的第二层叠体，形成第一层叠体，以及去除在第二存储单元将形成的区域中形成的第一层叠体 形成。 该方法可以包括同时处理在形成第一存储单元的区域中形成的第一堆叠体和形成在第二存储单元将被形成的区域中的第二堆叠体，以形成第一存储单元的存储单元 第一堆叠体并且从第二堆叠体形成第二存储单元的存储单元。

公开(公告)号：US20090141398A1

公开(公告)日：2009-06-04

申请号：US12327060

申请日：2008-12-03

申请人： Hideyuki AKIMOTO ,  Kenji NOMA

发明人： Hideyuki AKIMOTO ,  Kenji NOMA

IPC分类号： G11B5/17

CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3133 ,  G11B5/6064

摘要： A magnetic head has a magnetic main pole and a coil for generating a magnetic flux at the magnetic main pole by energizing the coil. The magnetic main pole is formed as a multi layer structure including at least one magnetic layer and at least one FeRh alloy layer.

摘要翻译： 磁头具有磁主极和线圈，用于通过对线圈通电而在磁主极产生磁通。 磁性主极形成为包括至少一个磁性层和至少一个FeRh合金层的多层结构。

公开(公告)号：US20080118779A1

公开(公告)日：2008-05-22

申请号：US11895875

申请日：2007-08-28

申请人： Kenji Noma

发明人： Kenji Noma

IPC分类号： G11B5/64 ,  C25B9/00 ,  C25D17/00

CPC分类号： G11B5/84 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C14/081 ,  C23C14/564 ,  G11B5/3163 ,  G11B5/3909 ,  G11B5/64 ,  H01F10/3254 ,  H01F41/307 ,  H01F41/32

摘要： A thin-film forming method and a thin-film forming apparatus can suppress the oxidization of a magnetic layer composed of a non-oxide material when a film of oxide is formed on the magnetic layer by sputtering that is suited to mass production. A multilayer film with a low RA value can be produced by such method and apparatus. A thin-film forming method that forms a thin film of oxide on the surface of a substrate by dispersing the oxide inside a chamber includes an enclosing step of enclosing the substrate in the chamber and an adsorbing step of adsorbing excess oxygen present inside the chamber by providing an adsorption unit, which adsorbs oxygen, inside the chamber.

摘要翻译： 薄膜形成方法和薄膜形成装置可以抑制在通过适于批量生产的溅射在磁性层上形成氧化物膜时由非氧化物材料构成的磁性层的氧化。 可以通过这种方法和装置制造具有低RA值的多层膜。 通过将氧化物分散在室内而在基板的表面上形成氧化物薄膜的薄膜形成方法包括将基板封装在室中的封闭步骤和通过在室内吸附存在于室内的过量氧气的吸附步骤 在室内提供吸附氧气的吸附单元。

公开(公告)号：US20050276996A1

公开(公告)日：2005-12-15

申请号：US10664066

申请日：2003-09-16

申请人： Jongill Hong ,  Hitoshi Kanai ,  Junichi Kane ,  Kenji Noma

发明人： Jongill Hong ,  Hitoshi Kanai ,  Junichi Kane ,  Kenji Noma

IPC分类号： B32B9/00 ,  G01R33/09 ,  G11B5/33 ,  G11B5/39 ,  H01F10/30 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/324 ,  H01F41/325 ,  Y10T428/1121 ,  Y10T428/1164 ,  Y10T428/1193

摘要： A magnetoresistive spin-valve sensor is constructed to include a magnetic layer, a specular layer made of a metal oxide, a back layer made of Au, Cu, AuCu, AgCu, AuAgCu or an alloy thereof and interposed between the magnetic layer and the specular layer, and a metal layer disposed adjacent to the specular layer, opposite to the back layer, and made of a metal which improves GMR performance of the magnetoresistive spin-valve sensor.

摘要翻译： 磁阻自旋阀传感器被构造为包括磁性层，由金属氧化物制成的镜面层，由Au，Cu，AuCu，AgCu，AuAgCu或其合金制成的背层，并且介于磁性层和镜面 并且与背层相对设置的与镜面层相邻的金属层，并且由改善磁阻自旋阀传感器的GMR性能的金属制成。