公开(公告)号：US5883060A

公开(公告)日：1999-03-16

申请号：US108890

申请日：1998-07-01

Applicant: Kwang-shin Lim ,  Sang-o Park

Inventor： Kwang-shin Lim ,  Sang-o Park

IPC: B08B3/08 ,  C11D3/39 ,  C11D7/08 ,  C11D7/26 ,  C11D7/60 ,  C11D11/00 ,  C23G5/02 ,  H01L21/304 ,  H01L21/306 ,  H05K3/26 ,  C11D9/04

CPC classification number: H01L21/02052 ,  C11D11/0047 ,  C11D3/3947 ,  C11D7/08 ,  C11D7/261 ,  H05K3/26 ,  Y10S134/902

Abstract: An aqueous cleaning composition comprises from about 0.1 to about 2 percent of hydrogen fluoride based on the volume of the composition, from about 9 to about 15 percent of hydrogen peroxide based on the volume of the composition, and from about 41 to about 47 percent of C.sub.1 to C.sub.6 alcohol based on the volume of the composition. The aqueous cleaning composition may be advantageous in that it offers increased cleaning efficiency and less corrosion in comparison to conventional cleaning solutions.

Abstract translation: 基于组合物的体积，含水清洁组合物包含约0.1至约2％的氟化氢，基于组合物体积的约9至约15％的过氧化氢，以及约41至约47％的过氧化氢 C1至C6醇基于组合物的体积。 水性清洁组合物的优点在于与常规的清洁溶液相比，其提供了更高的清洁效率和更少的腐蚀。

公开(公告)号：US20170108476A1

公开(公告)日：2017-04-20

申请号：US15251553

申请日：2016-08-30

Applicant: Sunghan JUNG ,  Ami CHOI ,  JungDae PARK ,  Dong-Soo LEE ,  Ji-Won EOM ,  Kyung-Soo CHAE ,  Kwang-Shin LIM

Inventor： Sunghan JUNG ,  Ami CHOI ,  JungDae PARK ,  Dong-Soo LEE ,  Ji-Won EOM ,  Kyung-Soo CHAE ,  Kwang-Shin LIM

IPC: G01N30/64 ,  B01J20/281 ,  G01N30/96

CPC classification number: G01N30/64 ,  G01N30/48 ,  G01N30/96

Abstract: A conductivity detector includes a flow channel, an electrode arrangement, and a detector. The flow channel has a tube shape with a channel diameter through which a solution including ion components flows. The electrode arrangement is on the flow channel and includes at least an anode and at least a cathode. The anode and cathode are spaced apart by an electrode gap less than or equal to the channel diameter. The detector is connected to the electrode arrangement to detect electrical conductivity of the ion components.

公开(公告)号：US07311857B2

公开(公告)日：2007-12-25

申请号：US10962508

申请日：2004-10-13

Applicant: Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

Inventor： Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

IPC: C09K13/04

CPC classification number: C09K13/08 ,  C11D1/008 ,  C11D1/72 ,  C11D3/042 ,  C11D3/046 ,  C11D11/0047 ,  H01L21/31111

Abstract: An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Abstract translation: 示例性的蚀刻组合物包括约0.1至8重量％的氟化氢，约10至25重量％的氟化铵，约0.0001至3重量％的非离子聚合物表面活性剂和水。 在湿蚀刻工艺中使用组合物，可以选择性地除去氧化物层，同时可以有效地钝化包括多晶硅的图案或存储电极。 可以以高蚀刻选择性去除氧化物层，同时最小化对多晶硅层的损伤。

公开(公告)号：US20060154484A1

公开(公告)日：2006-07-13

申请号：US11330803

申请日：2006-01-11

Applicant: Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

Inventor： Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31133 ,  H01L21/31053

Abstract: In one embodiment, a method of removing a low-k layer at a low cost and a method of recycling a wafer using the same, is described. A fluoride treatment is performed on the low-k layer formed on an object using an aqueous hydrogen fluoride solution, and the low-k layer is removed from the object. The Si—O bond in the low-k layer is broken due to an aqueous hydrogen fluoride solution, so that the low-k layer is easily removed from the wafer. Accordingly, the wafer may be recycled at a low cost, thereby improving manufacturing productivity of a semiconductor.

Abstract translation: 在一个实施例中，描述了以低成本去除低k层的方法以及使用其降低晶片的方法。 使用氟化氢水溶液对形成在物体上的低k层进行氟化处理，从物体除去低k层。 低k层中的Si-O键由于氟化氢水溶液而破裂，使得低k层容易从晶片上去除。 因此，可以以低成本回收晶片，从而提高半导体的制造生产率。

公开(公告)号：US06905570B2

公开(公告)日：2005-06-14

申请号：US10627565

申请日：2003-07-24

Applicant: Kwang-Shin Lim ,  Pil-Kwon Jun ,  Hun-Jung Yi ,  Sang-Oh Park ,  Yong-Kyun Ko

Inventor： Kwang-Shin Lim ,  Pil-Kwon Jun ,  Hun-Jung Yi ,  Sang-Oh Park ,  Yong-Kyun Ko

IPC: B65G49/04 ,  B65G49/07 ,  H01L21/304 ,  H01L21/673 ,  H01L21/677 ,  H01L21/687 ,  B08B7/02 ,  H01L21/22

CPC classification number: H01L21/67313 ,  H01L21/67326 ,  H01L21/68707

Abstract: An apparatus includes a chamber for containing a fluid, a guide seated in the chamber, and a transfer robot for loading and/or unloading a plurality of wafers to and/or from the guide. The wafers are located on the guide. The guide has a supporting member for supporting a wafer and a stopper member for preventing the wafer from being inclined over a predetermined range. The stopper member is in contact with a wafer edge disposed at a higher position than a wafer edge supported by the supporting member. A wafer guide has a stopper member to prevent adjacent wafers from being inclined and coming in contact with each other. Therefore, it is possible to suppress a poor drying such as water spots (or watermarks) produced when wafers are adhered to each other in a drying process.

Abstract translation: 一种装置包括用于容纳流体的腔室，位于腔室中的导向器和用于将多个晶片装载和/或从该引导件卸载的传送机器人。 晶片位于导轨上。 引导件具有用于支撑晶片的支撑构件和用于防止晶片倾斜超过预定范围的止动构件。 止动构件与设置在比由支撑构件支撑的晶片边缘更高的位置处的晶片边缘接触。 晶片引导件具有阻止相邻晶片倾斜并彼此接触的止动件。 因此，可以抑制在干燥过程中晶片彼此粘附时产生的水斑（或水印）等干燥不良。

公开(公告)号：US20050081883A1

公开(公告)日：2005-04-21

申请号：US10962508

申请日：2004-10-13

Applicant: Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

Inventor： Yong-Kyun Ko ,  Sang-Mun Chon ,  In-Hoi Doh ,  Pil-Kwon Jun ,  Sang-Mi Lee ,  Kwang-shin Lim ,  Myoung-Ok Han

IPC: C08K13/08 ,  B08B3/08 ,  C09K13/08 ,  C11D1/00 ,  C11D1/72 ,  C11D3/02 ,  C11D11/00 ,  C23F1/16 ,  C23F1/24 ,  H01L21/308 ,  H01L21/311 ,  H01L21/8242 ,  H01L27/108

CPC classification number: C09K13/08 ,  C11D1/008 ,  C11D1/72 ,  C11D3/042 ,  C11D3/046 ,  C11D11/0047 ,  H01L21/31111

Abstract: An exemplary etching composition includes about 0.1 to 8% by weight of hydrogen fluoride, about 10 to 25% by weight of ammonium fluoride, about 0.0001 to 3% by weight of a non-ionic polymer surfactant, and water. Using the composition in a wet etching process, an oxide layer may be selectively removed while a pattern or storage electrode including polysilicon may be effectively passivated. The oxide layer may be removed with a high etching selectivity, while at the same time minimizing damage to the polysilicon layer.

Abstract translation: 示例性的蚀刻组合物包括约0.1至8重量％的氟化氢，约10至25重量％的氟化铵，约0.0001至3重量％的非离子聚合物表面活性剂和水。 在湿蚀刻工艺中使用组合物，可以选择性地除去氧化物层，同时可以有效地钝化包括多晶硅的图案或存储电极。 可以以高蚀刻选择性去除氧化物层，同时最小化对多晶硅层的损伤。

公开(公告)号：US07351667B2

公开(公告)日：2008-04-01

申请号：US11580937

申请日：2006-10-16

Applicant: Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

Inventor： Dong-Won Hwang ,  Hun-Jung Yi ,  Kwang-Shin Lim ,  Jung-Dae Park

IPC: H01L21/469

CPC classification number: H01L27/10855 ,  H01L21/31111 ,  H01L21/76816

Abstract: An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

Abstract translation: 在用于扩大通过氧化硅层形成的开口的工艺中可以使用用于氧化硅的蚀刻溶液。 蚀刻溶液包含约0.2至约5.0重量％的氟化氢溶液，约0.05至约20.0重量％的氟化铵溶液，约40.0至约70.0重量％的烷基氢氧化物溶液和剩余的水。 蚀刻溶液可以蚀刻氧化硅层而不损坏由开口暴露的金属硅化物层。

公开(公告)号：US06232239B1

公开(公告)日：2001-05-15

申请号：US09141207

申请日：1998-08-26

Applicant: Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

Inventor： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park ,  Kyung-seuk Hwang

IPC: H01L21338

CPC classification number: H01L21/76804 ,  H01L21/02063 ,  H01L21/31111 ,  H01L21/76814 ,  Y10S438/906 ,  Y10S438/963

Abstract: A method for removing impurities and deposits formed in a contact hole of a semiconductor device. The method comprises the step of bathing the semiconductor device in a solution having concentrations of between about 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2 to 4 weight percent of H2O2, 0.05 to 0.25 weight percent of HF, and the remaining percent of deionized water. Such bathing is preferably carried out with the solution maintained at a constant temperature of between about 20 to 25° C. for about 1 to 5 minutes.

Abstract translation: 一种去除形成在半导体器件的接触孔中的杂质和沉积物的方法。 该方法包括将半导体器件洗涤在浓度为约25至35重量％的异丙醇（IPA），2至4重量％的H 2 O 2，0.05至0.25重量百分比的HF和其余百分比的溶液中的溶液的步骤 的去离子水。 这种洗浴优选在溶液保持在约20至25℃的恒定温度下进行约1至5分钟。

公开(公告)号：US6071827A

公开(公告)日：2000-06-06

申请号：US136139

申请日：1998-08-18

Applicant: Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park

Inventor： Kwang-shin Lim ,  Eun-a Kim ,  Sang-o Park

IPC: G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/00

CPC classification number: H01L21/02071 ,  H01L21/02063

Abstract: A method for manufacturing semiconductor devices including removing a photoresist and cleaning the substrate after removing the photoresist. The method for manufacturing semiconductor devices comprises removing the photoresist remaining on a semiconductor substrate using a dry etching process. The substrate is subsequently cleaned using a cleaning composition comprising a mixture of 25 to 35 weight percent of Isopropyl Alcohol (IPA), 2.0 to 4.0 weight percent of hydrogen peroxide (H.sub.2 O.sub.2), 0.05 to 0.25 weight percent of hydrofluoric acid (HF), and the remaining weight percent of deionized water.

Abstract translation: 一种用于制造半导体器件的方法，包括去除光致抗蚀剂并在除去光致抗蚀剂之后清洁衬底。 用于制造半导体器件的方法包括使用干蚀刻工艺去除残留在半导体衬底上的光致抗蚀剂。 随后使用包含25至35重量％的异丙醇（IPA），2.0至4.0重量％的过氧化氢（H 2 O 2），0.05至0.25重量％的氢氟酸（HF）的混合物和 去离子水的剩余重量百分比。

公开(公告)号：US07795198B2

公开(公告)日：2010-09-14

申请号：US11840165

申请日：2007-08-16

Applicant: Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

Inventor： Sang-Mi Lee ,  Kwang-Shin Lim ,  Jung-Dae Park ,  Tae-Hyo Choi

IPC: H01L21/02

CPC classification number: C11D11/0047 ,  C11D7/08 ,  C11D7/10 ,  C11D7/32 ,  C11D7/5022 ,  C11D11/0041

Abstract: In a composition for removing a polymeric contaminant that may remain on an apparatus for manufacturing a semiconductor device and a method of removing a polymeric contaminant using the composition, the composition includes from about 5 to 10 percent by weight of a fluoride salt, from about 5 to 15 percent by weight of an acid or a salt thereof, and from about 75 to 90 percent by weight of an aqueous solution of glycol. The composition can effectively remove the polymeric contaminant from the apparatus within a relatively short period of time, and suppress damages to parts of the apparatus.

Abstract translation: 在用于除去可能保留在用于制造半导体器件的装置上的聚合物污染物的组合物和使用该组合物去除聚合物污染物的方法中，该组合物包含约5-10重量％的氟化物盐，约5重量％ 至15重量％的酸或其盐，和约75至90重量％的乙二醇水溶液。 组合物可以在相对短的时间内有效地从设备中除去聚合物污染物，并且抑制对装置的部件的损坏。