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73 条记录 (耗时 0.021 秒)

    Semiconductor device and method for producing the same
    12.
    发明授权
    Semiconductor device and method for producing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06682966B2

    公开(公告)日：2004-01-27

    申请号：US10171540

    申请日：2002-06-17

    申请人： Hiroshi Iwata ,  Seizo Kakimoto ,  Masayuki Nakano ,  Kouichiro Adachi

    发明人： Hiroshi Iwata ,  Seizo Kakimoto ,  Masayuki Nakano ,  Kouichiro Adachi

    IPC分类号： A01L2100

    CPC分类号： H01L29/783 ,  H01L21/84 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78615 ,  H01L29/78618 ,  H01L29/78654

    摘要： A semiconductor device according to the present invention includes a semiconductor substrate; device isolation regions provided in the semiconductor substrate; a first conductivity type semiconductor layer provided between the device isolation regions; a gate insulating layer provided on an active region of the first conductivity type semiconductor layer; a gate electrode provided on the gate insulating layer; gate electrode side wall insulating layers provided on side walls of the gate electrode; and second conductivity type semiconductor layers provided adjacent to the gate electrode side wall insulating layers so as to cover a portion of the corresponding device isolation region, the second conductivity type semiconductor layers acting as a source region and/or a drain region. The gate electrode and the first conductivity type semiconductor layer are electrically connected to each other. The second conductivity type semiconductor layers are provided above the first conductivity type semiconductor layer and have a thickness which gradually increases from the device isolation region toward the gate electrode.

    摘要翻译： 根据本发明的半导体器件包括半导体衬底; 设置在半导体衬底中的器件隔离区; 设置在所述器件隔离区之间的第一导电型半导体层; 设置在所述第一导电型半导体层的有源区上的栅极绝缘层; 设置在所述栅极绝缘层上的栅电极; 设置在栅电极的侧壁上的栅电极侧壁绝缘层; 以及与栅电极侧壁绝缘层相邻设置以覆盖对应的器件隔离区的一部分的第二导电类型半导体层，作为源区和/或漏区的第二导电类型半导体层。 栅电极和第一导电类型半导体层彼此电连接。 第二导电类型半导体层设置在第一导电类型半导体层之上，并且具有从器件隔离区朝向栅极电极逐渐增加的厚度。

    Elevated source/drain field effect transistor and method for making the same
    13.
    发明授权
    Elevated source/drain field effect transistor and method for making the same 有权
    提高源/漏场效应晶体管及其制作方法

    公开(公告)号：US06677212B1

    公开(公告)日：2004-01-13

    申请号：US10070478

    申请日：2002-05-02

    申请人： Fumiyoshi Yoshioka ,  Masayuki Nakano ,  Hiroshi Iwata

    发明人： Fumiyoshi Yoshioka ,  Masayuki Nakano ,  Hiroshi Iwata

    IPC分类号： H01L27108

    CPC分类号： H01L29/66598 ,  H01L21/26586 ,  H01L21/28525 ,  H01L29/1083 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6659

    摘要： A gate oxide film (23), a gate electrode (24) and a gate cap insulating film (25) are stacked on an active region of a p-type semiconductor substrate (21), and an insulating side wall (29) is formed, followed by BF2 ion implantation. Thus, a surface of the p-type semiconductor substrate becomes amorphous so that single-crystal silicon is prevented from epitaxially growing in the next process of depositing polysilicon (33). Halo regions (32) are formed using the BF2 ions having the opposite conductivity to a source/drain to reduce the short-channel effect. The substrate is then passed through a nitrogen purge chamber having a dew point kept at −100° C. to remove water molecules completely, and polysilicon (33) is deposited. Because native oxide is prevented from growing at an interface between the active region and the polysilicon, source/drain regions (34) formed later by implantation and diffusion of n-type impurity ions achieve a uniform junction depth.

    摘要翻译： 在p型半导体基板（21）的有源区上层叠有栅极氧化膜（23），栅极电极（24）和栅极绝缘膜（25），形成绝缘侧壁（29） ，然后进行BF2离子注入。 因此，p型半导体衬底的表面变为非晶态，从而在下一个沉积多晶硅的工艺中防止单晶硅外延生长（33）。 使用与源极/漏极具有相反导电性的BF 2离子形成光晕区域（32），以减少短沟道效应。 然后将基底通过具有保持在-100℃的露点的氮气净化室，以完全去除水分子，并沉积多晶硅（33）。 因为防止在有源区和多晶硅之间的界面处生长了自然氧化物，所以随后通过n型杂质离子的注入和扩散而形成的源/漏区（34）达到均匀的结深度。

    Semiconductor device and process and apparatus of fabricating the same
    15.
    发明授权
    Semiconductor device and process and apparatus of fabricating the same 有权
    具有改进的互导性的半导体器件及其制造方法和装置

    公开(公告)号：US06297114B1

    公开(公告)日：2001-10-02

    申请号：US09205754

    申请日：1998-12-04

    申请人： Hiroshi Iwata ,  Masayuki Nakano ,  Seizo Kakimoto ,  Kouichirou Adachi ,  Satoshi Morishita

    发明人： Hiroshi Iwata ,  Masayuki Nakano ,  Seizo Kakimoto ,  Kouichirou Adachi ,  Satoshi Morishita

    IPC分类号： H01L21336

    CPC分类号： H01L29/6659 ,  H01L21/0332 ,  H01L21/26586 ,  H01L21/28017 ,  H01L21/823807 ,  H01L27/0928 ,  H01L29/1083 ,  H01L29/665 ,  H01L29/7833

    摘要： A semiconductor device having a gate electrode on a Si-substrate through a gate oxide film; a first impurity diffusion region having a conductivity type reversed to a well which will form a part of source and drain regions in the two opposing sides of the gate electrode through gate electrode sidewall dielectric films; a second impurity diffusion region having the same conductivity type as the first impurity diffusion region beneath the gate electrode sidewall dielectric film, touching a channel region directly below the gate electrode and being shallower than the first impurity diffusion region; a titanium silicide film on the gate electrode and the surface of the Si-substrate of the first impurity diffusion region in the two opposing sides of the gate electrode sidewall dielectric film; and a third impurity diffusion region, formed in the first impurity diffusion region, having a higher concentration than the first impurity diffusion region and the same conductivity type as the first and second impurity diffusion region. The above semiconductor device is able to suppress the short-channel effects, and reduce the source-drain parasitic resistance and the source-drain junction leakage current while maintaining a small source-drain capacity.

    摘要翻译： 一种通过栅极氧化膜在Si衬底上具有栅电极的半导体器件; 具有与阱相反的导电类型的第一杂质扩散区，其将通过栅电极侧壁电介质膜在栅电极的两个相对侧中形成源区和漏区的一部分; 第二杂质扩散区，与栅电极侧壁电介质膜下方的第一杂质扩散区具有相同的导电类型，与栅电极正下方的沟道区相比，比第一杂质扩散区浅; 所述栅极电极上的钛硅化物膜和所述栅电极侧壁电介质膜的两个相对侧中的所述第一杂质扩散区域的所述Si衬底的表面; 和形成在第一杂质扩散区中的第三杂质扩散区，其具有比第一杂质扩散区高的浓度和与第一和第二杂质扩散区相同的导电类型。 上述半导体器件能够抑制短沟道效应，并且在保持较小的源极 - 漏极容量的同时降低源极 - 漏极寄生电阻和源极 - 漏极结漏电流。

    Laser diode driving method and circuit
    16.
    发明授权
    Laser diode driving method and circuit 失效
    激光二极管驱动方法和电路

    公开(公告)号：US06292497B1

    公开(公告)日：2001-09-18

    申请号：US09179561

    申请日：1998-10-27

    申请人： Masayuki Nakano

    发明人： Masayuki Nakano

    IPC分类号： H01S313

    CPC分类号： H01S5/0683 ,  H01S5/042 ,  H01S5/06804

    摘要： In a laser diode driving method, a bias current set about the light emission threshold current of a laser diode, and a pulse current for causing the laser diode to emit light are adjusted in accordance with the ambient temperature. The laser diode is driven by a current prepared by superposing the bias current and the pulse current, thereby controlling the optical output and extinction ratio of the laser diode at a constant level. A laser diode driving circuit is also disclosed.

    摘要翻译： 在激光二极管驱动方法中，根据环境温度来调节关于激光二极管的发光阈值电流设定的偏置电流和用于使激光二极管发光的脉冲电流。 激光二极管由通过叠加偏置电流和脉冲电流准备的电流驱动，从而将激光二极管的光输出和消光比控制在恒定水平。 还公开了一种激光二极管驱动电路。

    Reflector-provided dipole antenna
    17.
    发明授权
    Reflector-provided dipole antenna 失效
    反射器提供的偶极天线

    公开(公告)号：US6008773A

    公开(公告)日：1999-12-28

    申请号：US080147

    申请日：1998-05-18

    申请人： Tohru Matsuoka ,  Hiroyuki Arai ,  Masayuki Nakano ,  Toshio Satoh

    发明人： Tohru Matsuoka ,  Hiroyuki Arai ,  Masayuki Nakano ,  Toshio Satoh

    IPC分类号： H01Q19/13 ,  H01Q1/50 ,  H01Q5/15 ,  H01Q9/16 ,  H01Q19/10 ,  H01Q9/28

    CPC分类号： H01Q19/108

    摘要： The reflector-provided dipole-antenna shows outstanding performance in a wide frequency range and allows simultaneous transmission and reception at different frequencies. A dipole antenna element is provided at the back of a dielectric substrate set to the reflector surface. A parasitic element is provided on the front of the dielectric substrate, which is constituted by forming and protruding the central portion of a linear conductor forward in an almost trapezoidal shape, for example. The protruded portion is set to a position corresponding to the front of the feed point of the dipole antenna element and the portions of the said parasitic element towards the ends are set to positions corresponding to the rear of the dipole antenna element. A feed circuit provided on the face side of dielectric substrate is connected to a coaxial connector provided at the back of the reflector.

    摘要翻译： 反射器提供的偶极天线在宽频率范围内表现出出色的性能，并允许在不同频率下同时进行发射和接收。 偶极天线元件设置在设置到反射器表面的电介质基板的背面。 电介质基板的前面设有寄生元件，该寄生元件例如通过将线状导体的中心部分以几乎梯形的形状向前方突出而形成。 突出部分被设置到与偶极天线元件的馈电点的前面相对应的位置，并且将所述寄生元件朝向端部的部分设置为对应于偶极天线元件的后部的位置。 设置在电介质基板的正面侧的馈电电路连接到设置在反射器背面的同轴连接器。

    Inkjet printer and printing method
    19.
    发明授权
    Inkjet printer and printing method 有权
    喷墨打印机和打印方式

    公开(公告)号：US08967770B2

    公开(公告)日：2015-03-03

    申请号：US13621013

    申请日：2012-09-15

    申请人： Masayuki Nakano

    发明人： Masayuki Nakano

    IPC分类号： B41J2/145

    CPC分类号： B41J29/38 ,  B41J2/04516 ,  B41J2/04581 ,  B41J2/04593 ,  B41J2/2128

    摘要： In a head (21) of an inkjet printer, a plurality of outlet rows are arranged in a scanning direction, the plurality of outlet rows each having a plurality of outlets arranged in a direction intersecting the scanning direction. The plurality of outlets are each capable of forming dots of a plurality of sizes on printing paper upon receiving different driving signals from an ejection control part (44). In the inkjet printer, under control of the ejection control part (44), some of the outlet rows form dots of only one size out of the plurality of sizes, and the other outlet rows form dots of only another size. In this way, causing the plurality of outlets in each outlet row to form dots of only one size makes it possible to reduce the occurrence of satellite droplets or the like and improve print quality.

    摘要翻译： 在喷墨打印机的头部（21）中，沿扫描方向布置多个排出列，所述多个出口排各自具有沿与扫描方向相交的方向排列的多个出口。 多个出口能够在从喷射控制部分（44）接收到不同的驱动信号时能够在打印纸上形成多个尺寸的点。 在喷墨打印机中，在排出控制部分（44）的控制下，一些出口行形成多个尺寸中只有一个尺寸的点，而另一个出口行形成仅一个尺寸的点。 以这种方式，使每个出口排中的多个出口形成仅一个尺寸的点，可以减少卫星液滴等的出现并提高打印质量。