公开(公告)号：US5825240A

公开(公告)日：1998-10-20

申请号：US916829

申请日：1997-08-22

Applicant: Michael W. Geis ,  Elliott R. Brown ,  Stephen J. Eglash ,  Christopher L. Dennis

Inventor： Michael W. Geis ,  Elliott R. Brown ,  Stephen J. Eglash ,  Christopher L. Dennis

IPC: H03K3/315

CPC classification number: B82Y10/00 ,  H03K3/315

Abstract: Resonant-tunneling transmission lines in the various architectures rely on discrete or continuous resonant-tunneling heterostructures to actively modify propagating logic signals. One embodiment utilizes amplification of logic signals to counteract ubiquitous losses and distortion associated with any transmission medium. Basically, the logic signal is incrementally reamplified and reshaped as it propagates along the transmission line. Another embodiment is directed to a clocking system that transmits a signal represented by a sinusoid. Then, in proximity to the logic gates or modules, the sinusoid is converted into a square wave that actually clocks the gates and other logic structures. The inventive active transmission line naturally performs this feature, thus enabling clock signal transmission over longer links coupled with sinusoid-to-square wave conversion in a limited area. Still other embodiments implement step or continuous variations in the physical width of the resonant-tunneling transmission line. By manipulating the transmission line width of successive sections of the line, isolation in addition to the logic operation of the input signals is achievable in a simple monolithic circuit design. Further embodiments are directed to oscillator circuits and the control of the characteristics of the generated periodic signal.

Abstract translation: 各种架构中的谐振隧穿传输线依靠离散或连续的谐振隧穿异质结构来主动修改传播逻辑信号。 一个实施例利用逻辑信号的放大来抵消与任何传输介质相关联的普遍存在的损耗和失真。 基本上，逻辑信号在沿着传输线传播时被逐步重新放大并重新形成。 另一个实施例涉及发送由正弦曲线表示的信号的计时系统。 然后，在逻辑门或模块附近，正弦曲线被转换成实际上对门和其他逻辑结构进行时钟的方波。 本发明的有源传输线自然地执行这个特征，因此能够在有限的区域中通过更长的链路进行时钟信号传输与正弦波到方波的转换。 其他实施例实现谐振隧穿传输线的物理宽度的步进或连续变化。 通过操纵线的连续部分的传输线宽度，除了输入信号的逻辑运算之外，在简单的单片电路设计中可实现隔离。 另外的实施例涉及振荡器电路和所生成的周期信号的特性的控制。

公开(公告)号：US5713775A

公开(公告)日：1998-02-03

申请号：US432848

申请日：1995-05-02

Applicant: Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz ,  Nickolay N. Efremow

Inventor： Michael W. Geis ,  Jonathan C. Twichell ,  Theodore M. Lyszczarz ,  Nickolay N. Efremow

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30 ,  H01J9/18

CPC classification number: H01J9/025 ,  H01J1/3042 ,  H01J2201/30457

Abstract: Improved field-emission devices are based on composing the back contact to the emitter material such that electron-injection efficiency into the emitter material is enhanced. Alteration of the emitter material structure near the contact or geometric field enhancement due to contact morphology gives rise to the improved injection efficiency. The devices are able to emit electrons at high current density and lower applied potential differences and temperatures than previously achieved. Wide-bandgap emitter materials without shallow donors benefit from this approach. The emission characteristics of diamond substitutionally doped with nitrogen, having a favorable emitter/vacuum band structure but being limited by the efficiency of electron injection into it, show especial improvement in the context of the invention. The injection-enhancing contacts can be created by combining the emitter material with an appropriate metal compound and annealing or by conventional dry anisotropic etching or ion bombardment techniques.

Abstract translation: 改进的场致发射器件基于构成与发射极材料的背接触，使得增加到发射极材料中的电子注入效率。 由接触形态引起的接触或几何场增强附近的发射极材料结构的改变提高了注入效率的提高。 器件能够以高电流密度发射电子，并且能够比以前实现的更低的施加电位差和温度。 没有浅供体的宽带隙发射体材料受益于这种方法。 替代地掺杂有氮的金刚石的发射特性具有良好的发射极/真空带结构但被电子注入的效率所限制，在本发明的上下文中显示出特别的改进。 注入增强触点可以通过将发射极材料与适当的金属化合物组合并进行退火或通过常规的干各向异性蚀刻或离子轰击技术来产生。

公开(公告)号：US5429734A

公开(公告)日：1995-07-04

申请号：US135068

申请日：1993-10-12

Applicant: Stephanie A. Gajar ,  Michael W. Geis

Inventor： Stephanie A. Gajar ,  Michael W. Geis

IPC: G01N27/447 ,  C25B9/00

CPC classification number: G01N27/44756 ,  G01N27/44743

Abstract: A method and apparatus for separating ions in a liquid sample based on electrophoretic mobility. The device includes a buried channel formed upon a semiconductor wafer and surrounded by an insulating material. A matrix liquid is disposed in the channel and facilitates movement of ions through the channel. A voltage source applies a voltage between first and second electrodes mounted in first and second reservoirs, respectively. The first and second reservoirs are located at opposite ends of the channel, and hold the matrix liquid. The applied voltage generates an electric field along the length of the channel that pulls molecules that are introduced into the channel along the channel, such that molecules having one polarity are attracted to the first electrode, and molecules having a second polarity are attracted to the second electrode.

Abstract translation: 一种基于电泳迁移率分离液体样品中的离子的方法和装置。 该器件包括形成在半导体晶片上并被绝缘材料包围的掩埋沟道。 基质液体设置在通道中并促进离子通过通道的移动。 电压源分别在安装在第一和第二储存器中的第一和第二电极之间施加电压。 第一和第二储存器位于通道的相对端，并保持基质液体。 所施加的电压沿着通道的长度产生电场，该电场沿着通道拉入引入通道的分子，使得具有一个极性的分子被吸引到第一电极，并且具有第二极性的分子被吸引到第二极性 电极。

公开(公告)号：US5122223A

公开(公告)日：1992-06-16

申请号：US680238

申请日：1984-12-10

Applicant: Michael W. Geis ,  Dale C. Flanders ,  Henry I. Smith

Inventor： Michael W. Geis ,  Dale C. Flanders ,  Henry I. Smith

IPC: C30B1/00 ,  C30B1/08 ,  C30B25/18

CPC classification number: C30B25/18 ,  C30B1/00 ,  C30B1/08 ,  C30B29/06 ,  Y10S117/904 ,  Y10S148/003 ,  Y10S148/09 ,  Y10S148/131

Abstract: Improvements to graphoepitaxy include use of irradiation by electrons, ions or electromagnetic or acoustic radiation to induce or enhance the influence of artificial defects on crystallographic orientation; use of single defects; and use of a relief structure that includes facets at 70.5 and/or 109.5 degrees.

Abstract translation: 改进的方法包括使用电子，离子或电磁或声辐射的辐射来诱导或增强人造缺陷对晶体取向的影响; 使用单一缺陷; 并使用包括70.5和/或109.5度的刻面的浮雕结构。

公开(公告)号：US4853076A

公开(公告)日：1989-08-01

申请号：US70599

申请日：1987-07-09

Applicant: Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

Inventor： Bor-Yeu Tsaur ,  John C. C. Fan ,  Michael W. Geis

IPC: C30B13/00 ,  C30B23/02 ,  C30B25/02 ,  C30B33/00 ,  H01L21/20

CPC classification number: C30B29/06 ,  C30B13/00 ,  C30B23/02 ,  C30B25/02 ,  C30B33/00 ,  H01L21/2022 ,  Y10S438/938

Abstract: An improved method and apparatus for optimizing the electrical properties while crystallizing material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and subjected to a heat treatment to intentionally induce thermal stress while crystallizing the material. The heat treatment melts the material being crystallized and when the material solidifies, a built-in stress is retained which, in the case of n-doped Si on fused silica results in a tensile stress which produces an electron mobility in the film of 870 cm.sup.2 /volt-sec as compared to similarly fashioned unstressed n-doped Si on SiO.sub.2 coated Si which has an electron mobility of 500 cm.sup.2 /volt-sec.

Abstract translation: 公开了一种用于在结晶材料时优化电性能的改进的方法和装置。 在本发明中，将要结晶的材料形成在基底上并进行热处理以在结晶材料的同时有意地引起热应力。 热处理熔化正在结晶的材料，并且当材料固化时，保留内在的应力，在熔融二氧化硅上的n掺杂Si的情况下，导致在870cm 2膜中产生电子迁移率的拉伸应力 /伏特，与具有500cm 2 /伏特电子迁移率的SiO 2涂覆的Si上的类似形状的未应力n掺杂Si相比。

公开(公告)号：US4479846A

公开(公告)日：1984-10-30

申请号：US391130

申请日：1982-06-23

Applicant: Henry I. Smith ,  Michael W. Geis

Inventor： Henry I. Smith ,  Michael W. Geis

IPC: C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  H01L21/20 ,  C30B13/06

CPC classification number: H01L21/2022 ,  C30B13/00 ,  C30B13/28 ,  C30B27/00 ,  C30B29/60 ,  Y10S117/913 ,  Y10S148/123 ,  Y10S148/152

Abstract: A process for entraining dislocations and other crystalline defects in a thin film includes coating a substrate, such as a layer of thermally grown silicon dioxide on a silicon wafer with the thin film of polycrystalline or amorphous silicon in the thickness range 0.05-10.mu. deposited by chemical vapor deposition. An encapsulation layer that is a composite of 2 .mu.m thickness SiO.sub.2, 30 nm of Si.sub.3 N.sub.4 is deposited on the thin film. A pattern of stripes is created on this encapsulation layer made of materials, such as titanium, silicon, silicon dioxide and photoresist. A long and narrow molten zone is created in the film with its long axis oriented perpendicular to the lines and is moved with a movable strip-heater over in a direction parallel to the lines in the recrystallization process to establish the dislocation and other crystalline defects in the film entrained to follow the pattern of stripes at locations related to the stripes.

Abstract translation: 夹杂在薄膜中的位错和其它结晶缺陷的方法包括在硅晶片上涂覆基底，例如多晶硅或非晶硅薄膜，厚度范围为0.05-10微米的硅片上的一层热生长二氧化硅 化学气相沉积。 作为2μm厚的SiO 2，30nm的Si 3 N 4的复合体的封装层沉积在薄膜上。 在由诸如钛，硅，二氧化硅和光致抗蚀剂的材料制成的该封装层上形成条纹图案。 在薄膜中产生长而窄的熔融区，其长轴垂直于线，并且在可再循环过程中与可行的带状加热器在平行于线的方向上移动，以建立位错和其它结晶缺陷 电影夹带着跟踪条纹相关的条纹。

公开(公告)号：US4371421A

公开(公告)日：1983-02-01

申请号：US254871

申请日：1981-04-16

Applicant: John C. C. Fan ,  Michael W. Geis ,  Bor-Yeu Tsaur

Inventor： John C. C. Fan ,  Michael W. Geis ,  Bor-Yeu Tsaur

IPC: C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  H01L21/20 ,  H01L21/324 ,  C30B19/00

CPC classification number: H01L21/324 ,  C30B13/00 ,  C30B13/06 ,  C30B27/00 ,  C30B29/60 ,  H01L21/2022 ,  Y10S148/002 ,  Y10S148/003 ,  Y10S148/026 ,  Y10S148/122 ,  Y10S148/152

Abstract: An improved method and apparatus for crystallizing amorphous or polycrystalline material is disclosed. In this invention, a material which is to be crystallized is formed on a substrate and single crystalline seed material is disposed adjacent and in contact with at least a portion of the material which is to be crystallized. A layer of material which serves as a "wetting agent" is then formed over the material to be crystallized. The structure thus formed is subjected to a heat treatment which melts the material being crystallized and when the material solidifies its crystalline structure is substantially epitaxial based on the seed material. The "wetting agent" layer serves to prevent deleterious balling up of the material during crystallization.

Abstract translation: 公开了一种用于结晶非晶或多晶材料的改进方法和装置。 在本发明中，将要结晶的材料形成在基底上，并且将单晶种子材料设置成与待结晶的材料的至少一部分相邻并接触。 然后在要结晶的材料上形成用作“润湿剂”的材料层。 对由此形成的结构进行热处理，该热处理熔化正在结晶的材料，并且当材料固化其晶体结构基于种子材料基本上是外延的。 “润湿剂”层用于防止在结晶过程中材料的有害的滚珠。

公开(公告)号：US07443090B2

公开(公告)日：2008-10-28

申请号：US11237637

申请日：2005-09-28

Applicant: Michael W. Geis ,  Theodore H. Fedynyshyn ,  Sandra J. Deneault ,  Keith E. Krohn ,  Theodore M. Lyszczarz ,  Michael F. Marchant

Inventor： Michael W. Geis ,  Theodore H. Fedynyshyn ,  Sandra J. Deneault ,  Keith E. Krohn ,  Theodore M. Lyszczarz ,  Michael F. Marchant

IPC: H01J1/00

CPC classification number: H01J1/304 ,  H01J1/32

Abstract: A surface-emission cathode formed on an insulating surface having cantilevered, i.e. “undercut,” electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10−7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm−1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.

Abstract translation: 形成在具有悬臂的绝缘表面上的表面发射阴极，即“底切”电极。 合适的绝缘表面包括负电子亲和力（NEA）绝缘体，如玻璃或金刚石。 阴极可以在电极和低真空电场（例如，至少10V cm -1 -1以上）没有偏压的情况下在包含的真空（例如，10 -7托）中操作 >）。 本发明的实施例制造成本低廉，需要约10微米的光刻分辨率。 这些阴极可以形成在用于照明和显示器的大面积上，并且适用于卫星应用，例如系绳阴极，推进器和空间充电中和剂。

公开(公告)号：US5900301A

公开(公告)日：1999-05-04

申请号：US779145

申请日：1997-01-03

Applicant: George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  B05D5/12

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: Fabrication of an electron-emitting device entails distributing electron-emissive carbon-containing particles (22) over a non-insulating region (12). The particles can be made electron emissive after the particle distributing step. Particle bonding material (24) is typically provided to bond the particles to the non-insulating region. The particle bonding material can include carbide formed by heating or/and can be created by modifying a layer (32) provided between the non-insulating region and the particles. In one embodiment, the particles emit electrons primarily from graphite or/and amorphous carbon regions. In another embodiment, the particles are made electron-emissive prior to the particle distributing step.

Abstract translation: 电子发射器件的制造需要在非绝缘区域（12）上分布电子发射含碳颗粒（22）。 在颗粒分布步骤之后，颗粒可以被制成电子发射。 通常提供颗粒粘合材料（24）以将颗粒结合到非绝缘区域。 粒子接合材料可以包括通过加热形成的碳化物和/或可以通过改变设置在非绝缘区域和颗粒之间的层（32）而形成的碳化物。 在一个实施方案中，颗粒主要从石墨或/和无定形碳区域发射电子。 在另一个实施方案中，颗粒在颗粒分布步骤之前被制成电子发射的。

公开(公告)号：US5608283A

公开(公告)日：1997-03-04

申请号：US269283

申请日：1994-06-29

Applicant: Jonathan C. Twichell ,  George R. Brandes ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： Jonathan C. Twichell ,  George R. Brandes ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: In one electron-emitting device, non-insulating particle bonding material (24) securely bonds electron-emissive carbon-containing particles (22) to an underlying non-insulating region (12). The carbon in each carbon-containing particle is in the form of diamond, graphite, amorphous carbon, or/and silicon carbide. In another electron-emitting device, electron-emissive pillars (22/28) overlie a non-insulating region (12). Each pillar is formed with an electron-emissive particle (22) and an underlying non-insulating pedestal (28).

Abstract translation: 在一个电子发射器件中，非绝缘粒子接合材料（24）将电子发射含碳颗粒（22）牢固地粘合到下面的非绝缘区域（12）上。 每个含碳颗粒中的碳为金刚石，石墨，无定形碳或/和碳化硅的形式。 在另一个电子发射器件中，电子发射柱（22/28）覆盖在非绝缘区（12）上。 每个柱形成有电子发射颗粒（22）和下面的非绝缘基座（28）。