公开(公告)号：US07722737B2

公开(公告)日：2010-05-25

申请号：US11123453

申请日：2005-05-04

Applicant: Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad M. Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer ,  Diana E. Gujer, legal representative

Inventor： Sudhir Gondhalekar ,  Robert Duncan ,  Siamak Salimian ,  Muhammad M. Rasheed ,  Harry Smith Whitesell ,  Bruno Geoffrion ,  Padmanabhan Krishnaraj ,  Rudolf Gujer

IPC: H01L21/326 ,  C23C16/505

CPC classification number: C23C16/4558

Abstract: Embodiments of the present invention are directed to a gas distribution system which distributes the gas more uniformly into a process chamber. In one embodiment, a gas distribution system comprises a gas ring including an outer surface and an inner surface, and a gas inlet disposed at the outer surface of the gas ring. The gas inlet is fluidicly coupled with a first channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of gas outlets are distributed over the inner surface of the gas ring, and are fluidicly coupled with a second channel which is disposed between the outer surface and the inner surface of the gas ring. A plurality of orifices are fluidicly coupled between the first channel and the second channel. The plurality of orifices are spaced from the gas inlet by a plurality of distances, and have sizes which vary with the distances from the gas inlet as measured along the first channel, such that the size of the orifice increases with an increase in the distance between the orifice and the gas inlet as measured along the first channel.

Abstract translation: 本发明的实施例涉及一种将气体更均匀地分配到处理室中的气体分配系统。 在一个实施例中，气体分配系统包括包括外表面和内表面的气环，以及设置在气环的外表面处的气体入口。 气体入口与设置在气体环的外表面和内表面之间的第一通道流体耦合。 多个气体出口分布在气环的内表面上，并且与设置在气体环的外表面和内表面之间的第二通道流体连接。 多个孔流体耦合在第一通道和第二通道之间。 多个孔与气体入口间隔多个距离，并且具有随着沿着第一通道测量的与气体入口的距离而变化的尺寸，使得孔的尺寸随着气体入口之间的距离的增加而增加 沿着第一通道测量的孔口和气体入口。

公开(公告)号：US20100048028A1

公开(公告)日：2010-02-25

申请号：US12195127

申请日：2008-08-20

Applicant: Muhammad M. Rasheed ,  Dmitry Lubomirsky

Inventor： Muhammad M. Rasheed ,  Dmitry Lubomirsky

IPC: C23C16/00 ,  B29C67/04 ,  H01L21/30

CPC classification number: C23C16/45591 ,  C04B35/581 ,  C04B40/0092 ,  C23C16/4404 ,  C23C16/45563 ,  C23C16/45565 ,  H01J37/32449 ,  H01L21/02271 ,  H01L21/0262 ,  H01L21/28556

Abstract: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.

Abstract translation: 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中，用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体，其中，主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中，主体可以具有中心杆和外环，其与中心杆的下部连接并径向向外延伸。 在一些实施方案中，制造挡板的方法可以包括烧结铝，氮和金属氧化物结合剂以形成挡板的主体，所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。

公开(公告)号：US20090120464A1

公开(公告)日：2009-05-14

申请号：US12265641

申请日：2008-11-05

Applicant: Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

Inventor： Muhammad M. Rasheed ,  Dmitry Lubomirsky ,  James Santosa

IPC: C23C16/00 ,  G05D7/00

CPC classification number: H01L21/67069 ,  C23C16/4412 ,  H01J37/32834 ,  H01J37/32862 ,  Y10S134/902 ,  Y10T137/85978 ,  Y10T137/87571

Abstract: An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.

Abstract translation: 描述了用于从半导体制造室清洗流体的排气前沿。 前排可以包括独立地联接到室的第一，第二和第三端口。 还描述了包括具有第一，第二和第三接口端口的衬底室的半导体制造系统。 该系统还可以包括具有第一，第二和第三端口的多端口前级线，其中第一前级线路端口耦合到第一接口端口，第二前级线路端口耦合到第二接口端口，并且第三前级端口 耦合到第三接口端口。 该系统还可以包括耦合到多端口前级管线的排气真空。

公开(公告)号：US08968537B2

公开(公告)日：2015-03-03

申请号：US13024198

申请日：2011-02-09

Applicant: Muhammad M. Rasheed ,  Rongjun Wang

Inventor： Muhammad M. Rasheed ,  Rongjun Wang

IPC: H01J37/34 ,  C23C14/34 ,  C22C19/03 ,  C22C9/00 ,  C22C9/04

CPC classification number: C23C14/3407 ,  C22C9/00 ,  C22C9/04 ,  C22C19/03 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3435

Abstract: Embodiments of the invention provide sputtering targets utilized in physical vapor deposition (PVD) and methods to form such sputtering targets. In one embodiment, a sputtering target contains a target layer disposed on a backing plate, and a protective coating layer—usually containing a nickel material—covering and protecting a region of the backing plate that would otherwise be exposed to plasma during the PVD processes. In many examples, the target layer contains a nickel-platinum alloy, the backing plate contains a copper alloy (e.g., copper-zinc), and the protective coating layer contains metallic nickel. The protective coating layer eliminates the formation of highly conductive, copper contaminants typically derived by plasma erosion of the copper alloy contained within the exposed surfaces of the backing plate. Therefore, the substrates and the interior surfaces of the PVD chamber remain free of such copper contaminants during the PVD processes.

Abstract translation: 本发明的实施例提供了用于物理气相沉积（PVD）的溅射靶和形成这种溅射靶的方法。 在一个实施例中，溅射靶包含设置在背板上的目标层和通常包含镍材料覆盖层并保护背衬板的区域的保护涂层，否则在PVD工艺期间将暴露于等离子体的区域。 在许多实施例中，靶层含有镍 - 铂合金，背板含有铜合金（例如铜 - 锌），保护涂层含有金属镍。 保护涂层消除了形成高度导电的铜污染物，通常由包含在背板的暴露表面内的铜合金的等离子体侵蚀导致。 因此，在PVD工艺期间，PVD室的基板和内表面保持没有这种铜污染物。

公开(公告)号：US20120211354A1

公开(公告)日：2012-08-23

申请号：US13365876

申请日：2012-02-03

Applicant: Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

Inventor： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

IPC: H01L21/203 ,  C23C14/06 ,  C23C14/35 ,  H01L21/28 ,  H01L21/31

CPC classification number: H01J37/34 ,  H01J37/32082 ,  H01J37/3441

Abstract: Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

Abstract translation: 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的

公开(公告)号：US20090261276A1

公开(公告)日：2009-10-22

申请号：US12107281

申请日：2008-04-22

Applicant: Dmitry LUBOMIRSKY ,  Muhammad M. RASHEED ,  Ellie Y. YIEH

Inventor： Dmitry LUBOMIRSKY ,  Muhammad M. RASHEED ,  Ellie Y. YIEH

IPC: G21G5/00 ,  H01J9/00

CPC classification number: H01L21/67115 ,  H01L21/3105 ,  H01S3/03 ,  H01S3/034 ,  H01S3/0385 ,  H01S3/225 ,  H05H1/2406 ,  H05H2001/2431 ,  H05H2001/245

Abstract: An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.

Abstract translation: 提供了一种用于产生准分子辐射的装置。 该装置包括具有壳体壁的壳体。 电极配置在外壳内。 管状体在电极周围。 管状体包括外壁和内壁。 至少一个惰性气体位于外壁和内壁之间，其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。

公开(公告)号：US20090068433A1

公开(公告)日：2009-03-12

申请号：US12204240

申请日：2008-09-04

Applicant: MUHAMMAD M. RASHEED

Inventor： MUHAMMAD M. RASHEED

IPC: B32B9/00

CPC classification number: C04B35/581 ,  C04B35/08 ,  C04B2235/3205 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3239 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3256 ,  C04B2235/3258 ,  C04B2235/40 ,  C04B2235/80 ,  C04B2235/94 ,  C04B2235/95 ,  C04B2235/9607 ,  C04B2235/963 ,  Y10T428/265

Abstract: Embodiments of the invention provide a method and apparatus for protecting a susceptor during a cleaning operation by loading a ceramic cover substrate containing either aluminum nitride or beryllium oxide onto the susceptor before introducing the cleaning agent into the chamber. In one embodiment, an aluminum nitride ceramic cover substrate is provided which includes an aluminum nitride ceramic wafer having a thermal conductivity of greater than 160 W/m-K, a circular-shaped geometry having a diameter within a range from about 11 inches to about 13 inches, a thickness within a range from about 0.030 inches to about 0.060 inches, and a flatness of about 0.010 inches or less. The thermal conductivity may be about 180 W/m-K, about 190 W/m-K, or greater. The thickness may be within a range from about 0.035 inches to about 0.050 inches, and the flatness may be about 0.008 inches, about 0.006 inches, or less.

Abstract translation: 本发明的实施例提供了一种用于在清洁操作期间通过将包含氮化铝或氧化铍的陶瓷覆盖基板载入到基座上来保护基座的方法和装置，然后将清洁剂引入室中。 在一个实施例中，提供了一种氮化铝陶瓷覆盖衬底，其包括导热率大于160W / mK的氮化铝陶瓷晶片，直径在约11英寸至约13英寸的范围内的圆形几何形状 ，在约0.030英寸至约0.060英寸的范围内的厚度，以及约0.010英寸或更小的平坦度。 热导率可以为约180W / m-K，约190W / m-K或更大。 厚度可以在约0.035英寸至约0.050英寸的范围内，并且平坦度可以为约0.008英寸，约0.006英寸或更小。

公开(公告)号：US07183227B1

公开(公告)日：2007-02-27

申请号：US10884628

申请日：2004-07-01

Applicant: Muhammad M. Rasheed ,  Steven H Kim

Inventor： Muhammad M. Rasheed ,  Steven H Kim

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/4763 ,  H01L21/311

CPC classification number: C23C16/4412 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612

Abstract: High flows of low-mass fluent gases are used in an HDP-CVD process for gapfill deposition of a silicon oxide film. An enhanced turbomolecular pump that provides a large compression ratio for such low-mass fluent gases permits pressures to be maintained at relatively low levels in a substrate processing chamber, thereby improving the gapfill characteristics.

Abstract translation: 在HDP-CVD工艺中使用高流量的低质量流动气体用于氧化硅膜的间隙填充。 为这种低质量流动气体提供大的压缩比的增强的涡轮分子泵允许在衬底处理室中保持相对较低水平的压力，从而提高间隙填充特性。

公开(公告)号：US09752228B2

公开(公告)日：2017-09-05

申请号：US12723199

申请日：2010-03-12

Applicant: Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

Inventor： Zhendong Liu ,  Rongjun Wang ,  Xianmin Tang ,  Srinivas Gandikota ,  Tza-Jing Gung ,  Muhammad M. Rasheed

IPC: C23C14/34 ,  H01J37/34

CPC classification number: C23C14/3407 ,  H01J37/342 ,  H01J37/3423

Abstract: Target assemblies and PVD chambers including target assemblies are disclosed. The target assembly includes a target that has a concave shaped target. When used in a PVD chamber, the concave target provides more radially uniform deposition on a substrate disposed in the sputtering chamber.

公开(公告)号：US08558299B2

公开(公告)日：2013-10-15

申请号：US13157164

申请日：2011-06-09

Applicant: Yong Cao ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

Inventor： Yong Cao ,  Xianmin Tang ,  Srinivas Gandikota ,  Wei D. Wang ,  Zhendong Liu ,  Kevin Moraes ,  Muhammad M. Rasheed ,  Thanh X. Nguyen ,  Ananthkrishna Jupudi

IPC: H01L29/788

CPC classification number: H01L21/28079 ,  C23C14/165 ,  C23C14/345 ,  C23C14/35 ,  H01L21/28088 ,  H01L21/2855 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/78

Abstract: Embodiments described herein provide a semiconductor device and methods and apparatuses of forming the same. The semiconductor device includes a substrate having a source and drain region and a gate electrode stack on the substrate between the source and drain regions. The gate electrode stack includes a conductive film layer on a gate dielectric layer, a refractory metal nitride film layer on the conductive film layer, a silicon-containing film layer on the refractory metal nitride film layer, and a tungsten film layer on the silicon-containing film layer. In one embodiment, the method includes positioning a substrate within a processing chamber, wherein the substrate includes a source and drain region, a gate dielectric layer between the source and drain regions, and a conductive film layer on the gate dielectric layer. The method also includes depositing a refractory metal nitride film layer on the conductive film layer, depositing a silicon-containing film layer on the refractory metal nitride film layer, and depositing a tungsten film layer on the silicon-containing film layer.

Abstract translation: 本文所述的实施例提供了一种半导体器件及其形成方法和装置。 半导体器件包括在源极和漏极区域之间的衬底上具有源极和漏极区域以及栅电极堆叠的衬底。 栅极电极堆叠包括在栅极介电层上的导电膜层，导电膜层上的难熔金属氮化物膜层，难熔金属氮化物膜层上的含硅膜层，以及硅 - 含有膜层。 在一个实施例中，该方法包括将衬底定位在处理室内，其中衬底包括源极和漏极区域，源极和漏极区域之间的栅极介电层以及栅极电介质层上的导电膜层。 该方法还包括在导电膜层上沉积难熔金属氮化物膜层，在难熔金属氮化物膜层上沉积含硅膜层，并在含硅膜层上沉积钨膜层。