公开(公告)号：US20180182759A1

公开(公告)日：2018-06-28

申请号：US15883977

申请日：2018-01-30

申请人： Nantero, Inc.

发明人： Claude L. BERTIN ,  Thomas RUECKES ,  X.M. Henry HUANG ,  Ramesh SIVARAJAN ,  Eliodor G. Ghenciu ,  Steven L. KONSEK ,  Mitchell MEINHOLD

IPC分类号： H01L27/102 ,  G11C13/02 ,  B82Y10/00 ,  H01L21/822 ,  H01L27/06 ,  H01L27/12

CPC分类号： H01L27/1021 ,  B82Y10/00 ,  G11C13/025 ,  G11C2213/19 ,  G11C2213/71 ,  G11C2213/72 ,  H01L21/8221 ,  H01L27/0688 ,  H01L27/1203

摘要： Under one aspect, a non-volatile nanotube diode device includes first and second terminals; a semiconductor element including a cathode and an anode, and capable of forming a conductive pathway between the cathode and anode in response to electrical stimulus applied to the first conductive terminal; and a nanotube switching element including a nanotube fabric article in electrical communication with the semiconductive element, the nanotube fabric article disposed between and capable of forming a conductive pathway between the semiconductor element and the second terminal, wherein electrical stimuli on the first and second terminals causes a plurality of logic states.

公开(公告)号：US09947400B2

公开(公告)日：2018-04-17

申请号：US15136414

申请日：2016-04-22

申请人： Nantero, Inc.

发明人： Darlene Viviani

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  G11C11/56 ,  G11C13/0002 ,  G11C13/0004 ,  G11C13/004 ,  G11C13/025 ,  G11C29/028 ,  G11C29/50008 ,  G11C2013/009 ,  G11C2013/0092 ,  G11C2213/19 ,  G11C2213/35 ,  G11C2213/79 ,  H01L51/0048 ,  H01L51/0575

摘要： A method for improving the stability of a resistive change cell is disclosed. The stability of a resistive change memory cell—that is, the tendency of the resistive change memory cell to retain its programmed resistive state—may, in certain applications, be compromised if the cell is programmed into an unstable or metastable state. In such applications, a programming method using bursts of sub-pulses within a pulse train is used to drive the resistive change cell material into a stable state during the programming operation, reducing resistance drift over time within the cell.

公开(公告)号：US20170246561A1

公开(公告)日：2017-08-31

申请号：US15595283

申请日：2017-05-15

申请人： Nantero, Inc.

发明人： J. THOMAS KOCAB ,  Thomas Bengtson ,  Sanjin Hosic ,  Rahul Sen ,  Billy Smith ,  David A. Roberts ,  Peter Sites

IPC分类号： B01D19/00 ,  D04H1/4242 ,  B05D7/24 ,  D04H1/732

CPC分类号： B01D19/0005 ,  B01D19/0031 ,  B01D19/0036 ,  B01D19/0057 ,  B01D19/0078 ,  B05D1/005 ,  B05D3/002 ,  B05D3/12 ,  B05D7/24 ,  D04H1/4242 ,  D04H1/732 ,  Y10T442/60

摘要： The present disclosure provides methods for removing defects nanotube application solutions and providing low defect, highly uniform nanotube fabrics. In one aspect, a degassing process is performed on a suspension of nanotubes to remove air bubbles present in the solution. In another aspect, a continuous flow centrifugation (CFC) process is used to remove small scale defects from the solution. In another aspect, a depth filter is used to remove large scale defects from the solution. According to the present disclosure, these three methods can be used alone or combined to realize a low defect nanotube application solutions and fabrics.

公开(公告)号：US09666272B2

公开(公告)日：2017-05-30

申请号：US14994077

申请日：2016-01-12

申请人： Nantero Inc.

发明人： Darlene Viviani

IPC分类号： G11C11/00 ,  G11C13/00 ,  G11C13/02

CPC分类号： G11C13/0021 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C13/025 ,  G11C2013/0078 ,  G11C2013/0088 ,  G11C2213/71 ,  G11C2213/72 ,  G11C2213/77 ,  G11C2213/79 ,  G11C2213/82

摘要： Methods for dynamically programming and dynamically reading one or more resistive change elements within a resistive change element array are disclosed. These methods include first pre-charging all of the array lines within a resistive change element array simultaneously and then grounding certain array lines while allowing other array lines to float in order to direct discharge currents through only selected cells. In this way, resistive change elements within resistive change element arrays made up of 1-R cells—that is, cells without in situ selection circuitry—can be reliably and rapidly accessed and programmed.

公开(公告)号：US20170072431A1

公开(公告)日：2017-03-16

申请号：US15241495

申请日：2016-08-19

申请人： Nantero inc.

发明人： David A. ROBERTS ,  Hao-Yu LIN ,  Thomas R. BENGTSON ,  Thomas RUECKES ,  Karl ROBINSON ,  H. Montgomery MANNING ,  Rahul SEN ,  Michel Pires MONTEIRO

IPC分类号： B05D1/40 ,  B05D1/28 ,  B05D1/18 ,  B05D1/32 ,  B05D1/00 ,  B05D1/02

CPC分类号： B05D1/40 ,  B05D1/005 ,  B05D1/02 ,  B05D1/18 ,  B05D1/28 ,  B05D1/32 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  D04H1/4242 ,  D04H1/4382 ,  D04H1/4391 ,  D04H1/74

摘要： A method for arranging nanotube elements within nanotube fabric layers and films is disclosed. A directional force is applied over a nanotube fabric layer to render the fabric layer into an ordered network of nanotube elements. That is, a network of nanotube elements drawn together along their sidewalls and substantially oriented in a uniform direction. In some embodiments this directional force is applied by rolling a cylindrical element over the fabric layer. In other embodiments this directional force is applied by passing a rubbing material over the surface of a nanotube fabric layer. In other embodiments this directional force is applied by running a polishing material over the nanotube fabric layer for a predetermined time. Exemplary rolling, rubbing, and polishing apparatuses are also disclosed.

摘要翻译： 公开了一种在纳米管织物层和膜内布置纳米管元件的方法。 在纳米管织物层上施加定向力以使织物层成为纳米管元件的有序网络。 也就是说，一个纳米管元件的网络沿其侧壁一起拉伸并且基本上沿均匀的方向取向。 在一些实施例中，通过将圆柱形元件滚动在织物层上而施加该定向力。 在其它实施例中，通过将摩擦材料通过纳米管织物层的表面来施加该定向力。 在其他实施例中，通过在纳米管织物层上运行抛光材料预定时间来施加该定向力。 还公开了示例性的滚动，摩擦和抛光装置。

公开(公告)号：US20170069846A1

公开(公告)日：2017-03-09

申请号：US15357003

申请日：2016-11-21

申请人： Nantero Inc.

发明人： Thomas RUECKES ,  H. Montgomery MANNING ,  Rahul SEN

IPC分类号： H01L51/00 ,  H01L51/10 ,  H01L45/00 ,  H01L51/05

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02203 ,  H01L21/02527 ,  H01L21/02606 ,  H01L21/02628 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/1029 ,  H01L29/1606 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0591 ,  H01L51/107 ,  Y10S977/842

摘要： Methods for passivating a nanotube fabric layer within a nanotube switching device to prevent or otherwise limit the encroachment of an adjacent material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous nanotube fabric layer to fill in the voids within the porous nanotube fabric layer while one or more other material layers are applied adjacent to the nanotube fabric layer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the nanotube fabric layer) is used to form a barrier layer within a nanotube fabric layer. In other embodiments, individual nanotube elements are combined with and nanoscopic particles to limit the porosity of a nanotube fabric layer.

摘要翻译： 公开了在纳米管切换装置内钝化纳米管织物层以防止或以其他方式限制相邻材料层的侵蚀的方法。 在一些实施例中，将牺牲材料注入多孔纳米管织物层内以填充多孔纳米管织物层内的空隙，同时将一个或多个其它材料层施加在邻近纳米管织物层的位置。 一旦其它材料层就位，则去除牺牲材料。 在其他实施例中，使用非牺牲填充材料（以不损害纳米管织物层的切换功能的方式选择和沉积）在纳米管织物层内形成阻挡层。 在其他实施方案中，单个纳米管元素与纳米颗粒结合以限制纳米管织物层的孔隙率。

公开(公告)号：US20170032839A1

公开(公告)日：2017-02-02

申请号：US15191277

申请日：2016-06-23

申请人： Nantero Inc.

发明人： Claude L. BERTIN ,  Glen ROSENDALE

IPC分类号： G11C13/00

CPC分类号： G11C13/0069 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/025 ,  G11C23/00 ,  G11C29/02 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C2013/0042 ,  G11C2013/0054 ,  G11C2213/35 ,  G11C2213/82 ,  H03K19/17728 ,  H03K19/17736 ,  H03K19/1776 ,  H03K19/1778 ,  H03K19/17796 ,  Y10S977/94

摘要： A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses. High speed data is received from an external synchronized data bus and stored by a PROGRAM operation within resistive change elements in a memory array configuration.

摘要翻译： 公开了一种用于电阻变化元件阵列的高速存储器电路架构。 一组电阻变化元件组织成行和列，每列由字线和每行由两个位线提供服务。 每行电阻变化元件包括一对参考元件和读出放大器。 参考元件是电阻分量，其电阻值在对应于SET条件的电阻和对应于阵列中使用的电阻变化元件内的RESET条件的电阻之间。 通过通过字线选择的电阻变化元件排出一行位线中的一个，并同时对该行的位线中的另一个通过参考元件进行放电，并比较两条线上的放电速率来执行高速读操作 使用行的读出放大器。 存储状态数据作为高速同步数据脉冲被发送到输出数据总线。 从外部同步数据总线接收高速数据，并通过存储器阵列配置中的电阻变化元件内的PROGRAM操作存储高速数据。

公开(公告)号：US09502675B2

公开(公告)日：2016-11-22

申请号：US15061255

申请日：2016-03-04

申请人： NANTERO INC.

发明人： Thomas Rueckes ,  H. Montgomery Manning ,  Rahul Sen, Jr.

IPC分类号： H01L51/10 ,  H01L29/16 ,  H01L51/00 ,  H01L29/06 ,  H01L51/05 ,  B82Y10/00 ,  H01L21/02 ,  H01L29/10 ,  B82Y40/00

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02203 ,  H01L21/02527 ,  H01L21/02606 ,  H01L21/02628 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/1029 ,  H01L29/1606 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1608 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/0591 ,  H01L51/107 ,  Y10S977/842

摘要： Methods for passivating a nanotube fabric layer within a nanotube switching device to prevent or otherwise limit the encroachment of an adjacent material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous nanotube fabric layer to fill in the voids within the porous nanotube fabric layer while one or more other material layers are applied adjacent to the nanotube fabric layer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the nanotube fabric layer) is used to form a barrier layer within a nanotube fabric layer. In other embodiments, individual nanotube elements are combined with and nanoscopic particles to limit the porosity of a nanotube fabric layer.

公开(公告)号：US09412447B1

公开(公告)日：2016-08-09

申请号：US14812173

申请日：2015-07-29

申请人： Nantero Inc.

发明人： Claude L. Bertin ,  Glen Rosendale

IPC分类号： G11C11/00 ,  G11C13/00

CPC分类号： G11C13/0069 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/025 ,  G11C23/00 ,  G11C29/02 ,  G11C29/021 ,  G11C29/023 ,  G11C29/028 ,  G11C2013/0042 ,  G11C2013/0054 ,  G11C2213/35 ,  G11C2213/82 ,  H03K19/17728 ,  H03K19/17736 ,  H03K19/1776 ,  H03K19/1778 ,  H03K19/17796 ,  Y10S977/94

摘要： A high-speed memory circuit architecture for arrays of resistive change elements is disclosed. An array of resistive change elements is organized into rows and columns, with each column serviced by a word line and each row serviced by two bit lines. Each row of resistive change elements includes a pair of reference elements and a sense amplifier. The reference elements are resistive components with electrical resistance values between the resistance corresponding to a SET condition and the resistance corresponding to a RESET condition within the resistive change elements being used in the array. A high speed READ operation is performed by discharging one of a row's bit lines through a resistive change element selected by a word line and simultaneously discharging the other of the row's bit lines through of the reference elements and comparing the rate of discharge on the two lines using the row's sense amplifier. Storage state data are transmitted to an output data bus as high speed synchronized data pulses. High speed data is received from an external synchronized data bus and stored by a PROGRAM operation within resistive change elements in a memory array configuration.

摘要翻译： 公开了一种用于电阻变化元件阵列的高速存储器电路架构。 一组电阻变化元件组织成行和列，每列由字线和每行由两个位线提供服务。 每行电阻变化元件包括一对参考元件和读出放大器。 参考元件是电阻分量，其电阻值在对应于SET条件的电阻和对应于阵列中使用的电阻变化元件内的RESET条件的电阻之间。 通过通过字线选择的电阻变化元件排出一行位线中的一个，并同时对该行的位线中的另一个通过参考元件进行放电，并比较两条线上的放电速率来执行高速读操作 使用行的读出放大器。 存储状态数据作为高速同步数据脉冲发送到输出数据总线。 从外部同步数据总线接收高速数据，并通过存储器阵列配置中的电阻变化元件内的PROGRAM操作存储高速数据。

公开(公告)号：US09406349B2

公开(公告)日：2016-08-02

申请号：US14268305

申请日：2014-05-02

申请人： Nantero Inc.

发明人： Claude L. Bertin ,  X. M. Henry Huang ,  Thomas Rueckes ,  Ramesh Sivarajan

IPC分类号： H01L27/20 ,  G11C5/06 ,  B82Y10/00 ,  G11C13/00 ,  G11C13/02 ,  G11C17/16 ,  H01L27/10 ,  H01L27/105 ,  H01L27/112 ,  H01L29/06 ,  H01L51/00 ,  H01L51/05

CPC分类号： G11C5/063 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/0021 ,  G11C13/025 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/19 ,  G11C2213/77 ,  G11C2213/79 ,  H01L27/10 ,  H01L27/105 ,  H01L27/1052 ,  H01L27/112 ,  H01L29/0665 ,  H01L29/0669 ,  H01L29/0673 ,  H01L51/0048 ,  H01L51/0591 ,  Y10S977/943

摘要： Under one aspect, a covered nanotube switch includes: (a) a nanotube element including an unaligned plurality of nanotubes, the nanotube element having a top surface, a bottom surface, and side surfaces; (b) first and second terminals in contact with the nanotube element, wherein the first terminal is disposed on and substantially covers the entire top surface of the nanotube element, and wherein the second terminal contacts at least a portion of the bottom surface of the nanotube element; and (c) control circuitry capable of applying electrical stimulus to the first and second terminals. The nanotube element can switch between a plurality of electronic states in response to a corresponding plurality of electrical stimuli applied by the control circuitry to the first and second terminals. For each different electronic state, the nanotube element provides an electrical pathway of different resistance between the first and second terminals.

摘要翻译： 在一个方面，覆盖的纳米管开关包括：（a）包括不对齐的多个纳米管的纳米管元件，所述纳米管元件具有顶表面，底表面和侧表面; （b）与纳米管元件接触的第一和第二端子，其中第一端子设置在并基本上覆盖纳米管元件的整个顶表面，并且其中第二端子接触纳米管的底表面的至少一部分 元件; 和（c）能够向第一和第二端子施加电刺激的控制电路。 纳米管元件可以响应于由控制电路施加到第一和第二端子的对应的多个电刺激而在多个电子状态之间切换。 对于每个不同的电子状态，纳米管元件提供在第一和第二端子之间具有不同电阻的电路径。