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    FILM FOR APPLYING COMPRESSIVE STRESS TO CERAMIC MATERIALS
    11.
    发明申请
    FILM FOR APPLYING COMPRESSIVE STRESS TO CERAMIC MATERIALS 审中-公开

    公开(公告)号：US20180375978A1

    公开(公告)日：2018-12-27

    申请号：US16015428

    申请日：2018-06-22

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  DEEPIKA SINGH

    IPC: H04M1/02

    Abstract: A method to provide compressive stress to substrates includes depositing a film on a ceramic substrate at a deposition temperature (Td) to form an article, the film having a difference relative to the ceramic substrate at Td in a coefficient thermal expansion (CTE) of at least 1.0×10−6/K and a difference in a refractive index >0.10. At least a portion of the thickness the film is converted in at least one of composition, phase and microstructure by lowering or raising the temperature from Td to reach a changed temperature (Tc) that is at least 100° C. different from Td. The film converting conditions result in the converted film portion providing a difference in refractive index at the Tc between the converted film and the ceramic substrate of ≤|0.10|. The temperature of the article is then lowered to room temperature.

    CHEMICAL MECHANICAL POLISHING OF ALUMINA
    14.
    发明申请
    CHEMICAL MECHANICAL POLISHING OF ALUMINA 有权
    氧化铝的化学机械抛光

    公开(公告)号：US20160032461A1

    公开(公告)日：2016-02-04

    申请号：US14450885

    申请日：2014-08-04

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  KANNAN BALASUNDARAM ,  ARUL CHAKKARAVARTHI ARJUNAN ,  DEEPIKA SINGH ,  WEI BAI

    IPC: C23F3/00 ,  C09G1/04

    CPC classification number: B24B37/20 ,  C09G1/02 ,  C09G1/04 ,  C23F3/00

    Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size 150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.

    Abstract translation: CMP方法使用在水中包含第一金属氧化物或半导体氧化物颗粒（第一氧化物颗粒）的浆料。 至少一个颗粒特征选自（i）具有多分散性> 30％的第一氧化物颗粒，（ii）包括第一或第II族离子的第一氧化物颗粒上的涂层，过渡金属氧化物或有机材料，（iii）第一 与煅制氧化物颗粒混合的氧化物颗粒，（iv）平均初级尺寸> 50nm的第一氧化物颗粒与平均初级尺寸<25nm的热解氧化物颗粒混合，和（v）每单位面积的每个表面积的第一氧化物颗粒< 100m 2 / gm与具有平均每单位面积重量> 150m 2 / gm的另一种氧化物颗粒混合。 将具有氧化铝表面的基板放入CMP设备中，并用旋转抛光垫和浆料进行CMP以抛光氧化铝表面。

    POLISHING OF HARD SUBSTRATES WITH SOFT-CORE COMPOSITE PARTICLES
    16.
    发明申请
    POLISHING OF HARD SUBSTRATES WITH SOFT-CORE COMPOSITE PARTICLES 有权
    硬质基材与软核复合颗粒的抛光

    公开(公告)号：US20160060488A1

    公开(公告)日：2016-03-03

    申请号：US14471755

    申请日：2014-08-28

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  ARUL CHAKKARAVARTHI ARJUNAN ,  KANNAN BALASUNDARAM ,  DEEPIKA SINGH ,  WEI BAI

    IPC: C09G1/04 ,  B24B37/04

    CPC classification number: C09G1/04 ,  B24B37/044 ,  C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  C30B33/00 ,  H01L21/02002 ,  H01L21/02024 ,  H01L21/30625

    Abstract: A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particles have a Mohs hardness at least 1 greater than a Mohs hardness of the soft core particle and/or a Vickers hardness at least 500 Kg/mm2 greater than the soft-core particle. A substrate having a substrate surface with a hardness greater than a Mohs number of 6 or a Vickers hardness greater than 1,000 kg/mm2 is placed into a CMP apparatus having a rotating polishing pad, and CMP is performed with the rotating polishing pad and the slurry to polish the substrate surface.

    Abstract translation: 化学机械抛光（CMP）包括提供包括分散在水性载体中的复合颗粒的浆料，其包含在软核颗粒的外表面上的多个硬颗粒。 硬质颗粒具有比软核颗粒的莫氏硬度至少大1的莫氏硬度和/或比软核颗粒大至少500kg / mm 2的维氏硬度。 将具有大于莫氏数6的维氏硬度大于1000kg / mm2的基板表面的基板放置在具有旋转抛光垫的CMP设备中，并且用旋转抛光垫和浆料进行CMP 抛光衬底表面。

    PATTERNED ARTICLES AND LIGHT EMITTING DEVICES THEREFROM
    17.
    发明申请
    PATTERNED ARTICLES AND LIGHT EMITTING DEVICES THEREFROM 审中-公开
    图案的文字和发光装置

    公开(公告)号：US20140191243A1

    公开(公告)日：2014-07-10

    申请号：US13736372

    申请日：2013-01-08

    Applicant: SINMAT, INC. ,  UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

    Inventor： RAJIV K. SINGH ,  PURUSHOTTAM KUMAR ,  DEEPIKA SINGH

    IPC: H01L33/60 ,  H01L21/02 ,  H01L33/00 ,  F21V5/00 ,  F21V7/22

    CPC classification number: H01L21/02518 ,  H01L33/007 ,  H01L33/10

    Abstract: A patterned article includes a substrate support having planar substrate surface portions including a substrate material having a substrate refractive index. A patterned surface is on the substrate support including a plurality of features lateral to the planar substrate surface portions protruding above a height of the planar substrate surface portions. At least a top surface of the plurality of features include an epi-blocking layer including at least one of (i) a non-single crystal material having a refractive index lower as compared to the substrate refractive index and (ii) a reflecting metal or a metal alloy (reflecting material). The epi-blocking layer is not on the planar substrate surface portions.

    Abstract translation: 图案化的制品包括具有平面衬底表面部分的衬底支撑件，其包括具有衬底折射率的衬底材料。 图案化表面在衬底支撑件上，包括在平面衬底表面部分的高度之上突出的平面衬底表面部分的侧面的多个特征。 多个特征的至少顶表面包括外延阻挡层，其包括以下中的至少一个：（i）与基板折射率相比折射率较低的非单晶材料和（ii）反射金属或 金属合金（反射材料）。 外阻挡层不在平面基板表面部分上。

    DEFECT CAPPING METHOD FOR REDUCED DEFECT DENSITY EPITAXIAL ARTICLES
    19.
    发明申请
    DEFECT CAPPING METHOD FOR REDUCED DEFECT DENSITY EPITAXIAL ARTICLES 审中-公开
    用于减少缺陷密度外延文章的缺陷捕获方法

    公开(公告)号：US20130237041A1

    公开(公告)日：2013-09-12

    申请号：US13872821

    申请日：2013-04-29

    Applicant: SINMAT, INC.

    Inventor： RAJIV K. SINGH ,  ARUL CHAKKARAVARTHI ARJUNAN

    IPC: H01L21/02

    CPC classification number: H01L21/0201 ,  C30B25/186 ,  C30B29/36 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/30608 ,  H01L21/30617 ,  H01L21/30625 ,  H01L29/1608 ,  H01L29/2003

    Abstract: A method for forming an epitaxial layer on a substrate surface having crystalline defect or amorphous regions and crystalline non-defect regions includes preferential polishing or etching the crystalline defect or amorphous regions relative to the crystalline non-defect regions to form a decorated substrate surface having surface recess regions. A capping layer is deposited on the decorated substrate surface to cover the crystalline non-defect regions and to at least partially fill the surface recess regions. The capping layer is patterned by removing the capping layer over the crystalline non-defect regions to form exposed non-defect regions while retaining the capping layer in at least a portion of the surface recess regions. Selective epitaxy is then used to form the epitaxial layer, wherein the capping layer in the surface recess regions restricts epitaxial growth of the epitaxial layer over the surface recess regions.

    Abstract translation: 在具有晶体缺陷或非晶区域和晶体非缺陷区域的衬底表面上形成外延层的方法包括相对于晶体非缺陷区域优先抛光或蚀刻晶体缺陷或非晶区域，以形成具有表面的装饰衬底表面 凹陷区域。 覆盖层沉积在装饰的衬底表面上以覆盖晶体非缺陷区域并且至少部分地填充表面凹陷区域。 通过在晶体非缺陷区域上移除覆盖层来形成覆盖层，以形成暴露的非缺陷区域，同时将覆盖层保持在表面凹陷区域的至少一部分中。 然后使用选择性外延形成外延层，其中表面凹陷区域中的覆盖层限制外延层在表面凹陷区域上的外延生长。

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