公开(公告)号：US06787287B2

公开(公告)日：2004-09-07

申请号：US10103756

申请日：2002-03-25

Applicant: Hyun-woo Kim ,  Sang-gyun Woo ,  Yool Kang

Inventor： Hyun-woo Kim ,  Sang-gyun Woo ,  Yool Kang

IPC: G03F7075

CPC classification number: G03F7/0758 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115

Abstract: A photosensitive polymer of a resist composition includes a copolymer of alkyl vinyl ether containing silicon and maleic anhydride, represented by the following formula: where R1 is —H, —OSi(CH3)2C(CH3)3 or —OSi(CH3)3; R2 is —H, —OH, —OCOCH3, —OSi(CH3)2C(CH3)3 or —OSi(CH(CH3)2)3; R3 is —H, —OH or —OCOCH3; R4 is —H, —OSi(CH3)2C(CH3)3, —CH2OSi(CH3)2C(CH3)3 or —CH2OSi(CH(CH3)2)3; and at least one of R1, R2, R3 and R4 is a Si-containing group.

Abstract translation: 抗蚀剂组合物的光敏聚合物包括由下式表示的含硅烷基乙烯基醚和马来酸酐的共聚物：其中R1是-H，-OSi（CH3）2C（CH3）3或-OSi（CH3）3; R2是-H，-OH，-OCOCH3，-OSi（CH3）2C（CH3）3或-OSi（CH（CH3）2）3; R3是-H，-OH或-OCOCH3; R4是-H，-OSi（CH3）2C（CH3）3，-CH2OSi（CH3）2C（CH3）3或-CH2OSi（CH（CH3）2）3; R 1，R 2，R 3和R 4中的至少一个为含Si基团。

公开(公告)号：US08735053B2

公开(公告)日：2014-05-27

申请号：US13099910

申请日：2011-05-03

Applicant: Subramanya Mayya ,  Takahiro Yasue ,  Seok-hwan Oh ,  Yool Kang

Inventor： Subramanya Mayya ,  Takahiro Yasue ,  Seok-hwan Oh ,  Yool Kang

IPC: G03F7/26

CPC classification number: G03F7/40 ,  G03F7/322

Abstract: Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer.

Abstract translation: 形成光致抗蚀剂图案的方法可以包括在基板上形成光致抗蚀剂层，使用曝光掩模曝光光致抗蚀剂层，通过显影曝光的光致抗蚀剂层和使用包括涂层的处理剂处理初步图案的表面来形成初步图案 聚合物。

公开(公告)号：US08173358B2

公开(公告)日：2012-05-08

申请号：US12432357

申请日：2009-04-29

Applicant: Hyoung-hee Kim ,  Yool Kang ,  Seong-woon Choi ,  Jin-young Yoon

Inventor： Hyoung-hee Kim ,  Yool Kang ,  Seong-woon Choi ,  Jin-young Yoon

IPC: G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC classification number: H01L21/0273 ,  Y10S430/106 ,  Y10S430/114

Abstract: A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

Abstract translation: 一种形成半导体器件的精细图案的方法包括在衬底上形成多个第一掩模图案，使得多个第一掩模图案在平行于所述第一掩模图案的主表面的方向上彼此分开位于其间的空间 形成多个由第一材料形成的封盖膜，该第一材料在溶剂中具有第一溶解性，并且在多个第一掩模图案的侧壁和顶表面上形成。 该方法还包括形成由溶剂中第二溶解度小于第一溶解度的第二材料形成的第二掩模层，以填充位于多个第一掩模图案之间的空间，并形成多个 第二掩模图案对应于残留在位于多个第一掩模图案之间的空间中的第二掩模层的残留部分，在使用溶剂除去多个封盖膜和第二掩模层的一部分之后。

公开(公告)号：US20090131684A1

公开(公告)日：2009-05-21

申请号：US12285047

申请日：2008-09-29

Applicant: Yool Kang ,  Hak-won Kim ,  Weoun-ju Kim ,  Seong-woon Choi ,  Hyun-woo Kim ,  Hai-sub Na ,  Kyoung-taek Kim

Inventor： Yool Kang ,  Hak-won Kim ,  Weoun-ju Kim ,  Seong-woon Choi ,  Hyun-woo Kim ,  Hai-sub Na ,  Kyoung-taek Kim

IPC: C07D339/08 ,  C07C309/04 ,  C07D333/46 ,  C07D335/02

CPC classification number: G03F7/0045 ,  C07C309/65 ,  C07C381/12 ,  C07D327/06 ,  C07D333/46 ,  C07D335/02 ,  C07D339/08 ,  G03F7/0392

Abstract: A photoacid generator represented by Formula 1 or Formula 2: wherein R1, R2, and R3 are each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S+, and at least one CH2 group in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R5—S+A−, where R5 is a C1-C10 alkyl group, and A− is a counter-ion.

Abstract translation: 由式1或式2表示的光酸产生剂：其中R1，R2和R3各自独立地为C1-C10烷基，X为与S +形成环的C 3 -C 20脂环族烃基和至少一个CH 2基团 脂环族烃基可以被选自S，O，NH，羰基和R5-S + A-中的至少一种取代，其中R5是C1-C10烷基，A-是 抗衡离子。

公开(公告)号：US20050026078A1

公开(公告)日：2005-02-03

申请号：US10924484

申请日：2004-08-24

Applicant: Sang-jun Choi ,  Yool Kang ,  Joo-tae Moon ,  Jeong-hee Chung ,  Sang-gyun Woo

Inventor： Sang-jun Choi ,  Yool Kang ,  Joo-tae Moon ,  Jeong-hee Chung ,  Sang-gyun Woo

IPC: G03F7/004 ,  C08K5/00 ,  C08K5/06 ,  C08K5/14 ,  C08K5/16 ,  C08K5/23 ,  C08L61/04 ,  G03F7/022 ,  G03F7/039 ,  G03F7/40 ,  H01L21/027 ,  G03C1/76

CPC classification number: G03F7/40

Abstract: A method for forming a fine pattern in a semiconductor substrate, by coating a target layer to be etched on a semiconductor substrate with a resist composition including at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator. The free radical initiator is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound. A lithography process is performed on the resist compound layer to form a photoresist pattern. The resist compound layer having the photoresist pattern formed therein is heated to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs.

Abstract translation: 一种在半导体衬底中形成精细图案的方法，其中通过用光刻工艺将包含至少一种能形成光致抗蚀剂图案的化合物的抗蚀剂组合物涂覆在半导体衬底上的待蚀刻靶材层和自由基引发剂。 自由基引发剂能够在等于或高于至少一种化合物的玻璃化转变温度的温度下被热处理分解。 在抗蚀剂化合物层上进行光刻工艺以形成光致抗蚀剂图案。 将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中发生抗蚀剂组合物中的部分交联反应。

公开(公告)号：US06485895B1

公开(公告)日：2002-11-26

申请号：US09533770

申请日：2000-03-23

Applicant: Sang-jun Choi ,  Yool Kang ,  Joo-tae Moon ,  Jeong-hee Chung ,  Sang-gyun Woo

Inventor： Sang-jun Choi ,  Yool Kang ,  Joo-tae Moon ,  Jeong-hee Chung ,  Sang-gyun Woo

IPC: G03F740

CPC classification number: G03F7/40

Abstract: A method for forming a fine pattern in a semiconductor substrate, comprises the steps of (a) coating a target layer to be etched on a semiconductor substrate with a resist composition comprising at least one compound capable of forming a photoresist pattern by a photolithography process, and a free radical initiator, wherein the free radical initiator is one which is capable of being decomposed by a thermal process at a temperature equal to or higher than the glass transition temperature of the at least one compound, wherein said coating step results in forming a resist compound layer comprising the resist composition; (b) performing a lithography process on the resist compound layer to form a photoresist pattern of at least one opening having a first width, wherein the target layer is exposed through the first width; and (c) heating the resist compound layer having the photoresist pattern formed therein to a temperature equal to or higher than the glass transition temperature of the at least one compound, and wherein a partial cross-linking reaction in the resist composition occurs by the free radicals produced from the free radical initiator resulting in a modified photoresist pattern having at least one opening having a second width which exposes the target layer, wherein the second width is smaller than the first width.

Abstract translation: 一种用于在半导体衬底中形成精细图案的方法，包括以下步骤：（a）用包含至少一种能够通过光刻工艺形成光致抗蚀剂图案的化合物的抗蚀剂组合物在半导体衬底上涂覆待蚀刻的靶层， 和自由基引发剂，其中所述自由基引发剂是能够在等于或高于所述至少一种化合物的玻璃化转变温度的温度下通过热处理分解的引发剂，其中所述涂布步骤导致形成 抗蚀剂化合物层，其包含抗蚀剂组合物; （b）对抗蚀剂化合物层进行光刻处理以形成具有第一宽度的至少一个开口的光致抗蚀剂图案，其中目标层通过第一宽度暴露; 和（c）将其中形成有光致抗蚀剂图案的抗蚀剂化合物层加热到等于或高于至少一种化合物的玻璃化转变温度的温度，并且其中抗蚀剂组合物中的部分交联反应通过自由基 由自由基引发剂产生的自由基导致具有至少一个具有暴露目标层的第二宽度的开口的改性光致抗蚀剂图案，其中第二宽度小于第一宽度。

公开(公告)号：US6114084A

公开(公告)日：2000-09-05

申请号：US165061

申请日：1998-10-02

Applicant: Yool Kang ,  Sang-Jun Choi ,  Dong-Won Jung ,  Chun-Geun Park ,  Young-Bum Koh

Inventor： Yool Kang ,  Sang-Jun Choi ,  Dong-Won Jung ,  Chun-Geun Park ,  Young-Bum Koh

IPC: G03F7/004 ,  G03F7/039 ,  G03C1/492

CPC classification number: G03F7/039 ,  G03F7/0045

Abstract: Copolymers and terpolymers are used in chemically amplified resists. The terpolymers are of the formula: ##STR1## wherein R.sub.3 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof; R.sub.4 is selected from the group consisting of hydrogen and a C.sub.1 to C.sub.10 aliphatic hydrocarbon, wherein said aliphatic hydrocarbon contains substituents selected from the group consisting of hydrogen, hydroxy, carboxylic acid, carboxylic anhydride, and combinations thereof, R.sub.5 is selected from the group consisting of hydrogen and methyl; R.sub.6 is selected from the group consisting of t-butyl and tetrahydropyranyl; M and n are each integers; and wherein n/(m+n) ranges from about 0.1 to about 0.5. Also, a resist composition for use in a chemically amplified resist, which comprises a photoacid generator and a polymer having the formula: ##STR2## wherein x is selected from the group consisting of C.sub.5 to C.sub.8 cyclic or alicyclic composition, R.sub.7 is selected from the group consisting of hydrogen and methyl; R.sub.4 is selected from the group consisting of t-butyl, tetrahydropyranyl and adamantyl; m and n are each integers; and the ratio n/(m+n) ranges from about 0.1 to about 0.5.

Abstract translation: 共聚物和三元共聚物用于化学增强抗蚀剂。 三元共聚物具有下式：其中R 3选自氢和C 1至C 10脂族烃，其中所述脂族烃含有选自氢，羟基，羧酸，羧酸酐及其组合的取代基 ; R 4选自氢和C 1至C 10脂族烃，其中所述脂族烃包含选自氢，羟基，羧酸，羧酸酐及其组合的取代基，R 5选自 的氢和甲基; R6选自叔丁基和四氢吡喃基; M和n分别是整数; 并且其中n /（m + n）为约0.1至约0.5。 另外，用于化学放大抗蚀剂的抗蚀剂组合物，其包含光致酸发生剂和具有下式的聚合物：其中x选自C5至C8环状或脂环族组合物，R7选自由以下组成的组： 氢和甲基; R4选自叔丁基，四氢吡喃基和金刚烷基; m和n分别为整数; n /（m + n）的比例为约0.1至约0.5。

公开(公告)号：US20150364334A1

公开(公告)日：2015-12-17

申请号：US14695047

申请日：2015-04-24

Applicant: Yool Kang ,  Dong-won Kim ,  Ju-young Kim ,  Tae-hoon Kim ,  Hye-ji Lee ,  Su-min Park ,  Hyung-rae Lee

Inventor： Yool Kang ,  Dong-won Kim ,  Ju-young Kim ,  Tae-hoon Kim ,  Hye-ji Lee ,  Su-min Park ,  Hyung-rae Lee

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/02 ,  H01L21/027

CPC classification number: H01L21/3086 ,  H01L21/0273 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10888

Abstract: Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.

Abstract translation: 提供形成图案的方法和制造集成电路器件的方法。 在形成图案的方法中，形成具有暴露目标层的第一区域的第一开口的光致抗蚀剂图案。 在限定第一开口的光致抗蚀剂图案的侧壁处形成覆盖层。 通过将酸从封盖层扩散到光致抗蚀剂图案的内部，在第一开口周围形成不溶性区域。 通过去除与第一开口间隔开的可溶性区域形成暴露目标层的第二区域的第二开口，其中插入不溶性区域。 使用不溶性区域作为蚀刻掩模蚀刻靶层。

公开(公告)号：US08623739B2

公开(公告)日：2014-01-07

申请号：US13185897

申请日：2011-07-19

Applicant: Hyung-rae Lee ,  Yool Kang ,  Kyung-hwan Yoon ,  Hyoung-hee Kim ,  So-ra Han ,  Tae-hoi Park

Inventor： Hyung-rae Lee ,  Yool Kang ,  Kyung-hwan Yoon ,  Hyoung-hee Kim ,  So-ra Han ,  Tae-hoi Park

IPC: H01L21/76

CPC classification number: H01L27/10891 ,  G03F7/40 ,  H01L21/0206 ,  H01L21/823842 ,  H01L27/0207 ,  H01L27/10876 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66606

Abstract: A method of manufacturing a semiconductor device includes forming a resist pattern on a first region on a substrate, bringing a descum solution including an acid source into contact with the resist pattern and with a second region of the substrate, decomposing resist residues remaining on the second region of the substrate by using acid obtained from the acid source in the descum solution and removing the decomposed resist residues and the descum solution from the substrate.

Abstract translation: 一种制造半导体器件的方法包括在衬底上的第一区域上形成抗蚀剂图案，使包含酸源的除去溶液与抗蚀剂图案接触，并与衬底的第二区域分离，残留在第二区域上的抗蚀剂残留物 通过使用从除去溶液中的酸源获得的酸，并从底物除去分解的抗蚀剂残留物和除去溶液的底物区域。

公开(公告)号：US20130034965A1

公开(公告)日：2013-02-07

申请号：US13564611

申请日：2012-08-01

Applicant: Hyoung-Hee KIM ,  Yool Kang ,  Song-Se Yi ,  Young-Ho Kim ,  Jae-Ho Kim

Inventor： Hyoung-Hee KIM ,  Yool Kang ,  Song-Se Yi ,  Young-Ho Kim ,  Jae-Ho Kim

IPC: H01L21/308

CPC classification number: H01L21/0274 ,  H01L21/0337 ,  H01L21/28123 ,  H01L21/31144 ,  H01L29/40114 ,  H01L29/40117

Abstract: In a method of fabricating patterns in an integrated circuit device, first mask patterns, sacrificial patterns, and second mask patterns are formed on a target layer such that the sacrificial patterns are provided between sidewalls of adjacent ones of the first and second mask patterns. The sacrificial patterns between the sidewalls of the adjacent ones of the first and second mask patterns are selectively removed using a dry etch-back process, and the target layer is patterned using the first and second mask patterns as a mask.

Abstract translation: 在制造集成电路器件中的图案的方法中，在目标层上形成第一掩模图案，牺牲图案和第二掩模图案，使得牺牲图案设置在相邻的第一和第二掩模图案的侧壁之间。 使用干蚀刻工艺选择性地去除第一和第二掩模图案中相邻的掩模图案的侧壁之间的牺牲图案，并且使用第一和第二掩模图案作为掩模对目标层进行图案化。