公开(公告)号：US20200181769A1

公开(公告)日：2020-06-11

申请号：US16709108

申请日：2019-12-10

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg ,  Eva E. Tois ,  Robert Huggare ,  Jan Willem Maes ,  Vladimir Machkaoutsan ,  Dieter Pierreux

IPC: C23C16/34 ,  C23C16/455 ,  C23C16/40 ,  C23C16/36

Abstract: Methods are disclosed herein for depositing a passivation layer comprising fluorine over a dielectric material that is sensitive to chlorine, bromine, and iodine. The passivation layer can protect the sensitive dielectric layer thereby enabling deposition using precursors comprising chlorine, bromine, and iodine over the passivation layer.

公开(公告)号：US10043880B2

公开(公告)日：2018-08-07

申请号：US15492892

申请日：2017-04-20

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/45 ,  C23C16/06 ,  C23C16/455 ,  C23C16/40 ,  H01L21/285 ,  H01L21/324 ,  H01L21/3215 ,  H01L29/78 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/45 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45527 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/7827

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US20170352737A1

公开(公告)日：2017-12-07

申请号：US15492892

申请日：2017-04-20

Applicant: ASM INTERNATIONAL N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L29/45 ,  H01L29/66 ,  H01L21/3215 ,  H01L21/324 ,  C23C16/06 ,  H01L21/285 ,  C23C16/455 ,  H01L29/78 ,  C23C16/40 ,  H01L29/49

CPC classification number: H01L29/45 ,  C23C16/06 ,  C23C16/406 ,  C23C16/45527 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/3215 ,  H01L21/324 ,  H01L21/76843 ,  H01L21/76855 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/66666 ,  H01L29/7827

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.

公开(公告)号：US09816203B2

公开(公告)日：2017-11-14

申请号：US14717919

申请日：2015-05-20

Applicant: ASM International N.V.

Inventor： Tom E. Blomberg

IPC: C30B23/02 ,  C30B29/32 ,  C30B1/02 ,  C30B25/18 ,  C30B29/68 ,  C30B1/04 ,  C30B29/24 ,  H01L21/02

CPC classification number: C30B29/32 ,  C30B1/02 ,  C30B1/04 ,  C30B25/18 ,  C30B25/186 ,  C30B29/24 ,  C30B29/68 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02197 ,  H01L21/0228 ,  H01L21/02318 ,  Y10T428/31678

Abstract: Methods of forming a crystalline strontium titanate layer may include providing a substrate with a crystal enhancement surface (e.g., Pt), depositing strontium titanate by atomic layer deposition, and conducting a post-deposition anneal to crystallize the strontium titanate. Large single crystal domains may be formed, laterally extending greater distances than the thickness of the strontium titanate and demonstrating greater ordering than the underlying crystal enhancement surface provided to initiate ALD. Functional oxides, particularly perovskite complex oxides, can be heteroepitaxially deposited over the crystallized STO.

公开(公告)号：US20170018433A1

公开(公告)日：2017-01-19

申请号：US15186950

申请日：2016-06-20

Applicant: ASM International N.V.

Inventor： Viljami J. Pore ,  Suvi P. Haukka ,  Tom E. Blomberg ,  Eva E. Tois

IPC: H01L21/285 ,  H01L29/45 ,  H01L21/3213 ,  H01L29/66 ,  H01L21/321 ,  H01L21/3215

CPC classification number: H01L21/28518 ,  H01L21/28052 ,  H01L21/28568 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/3215 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76886 ,  H01L29/456 ,  H01L29/665 ,  H01L29/78

Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.

Abstract translation: 一方面，提供了硅化和锗化的方法。 在一些实施例中，用于形成金属硅化物的方法可包括在衬底的暴露的硅区上形成非氧化物界面，例如锗或固体锑。 在界面层上形成金属氧化物。 退火和还原使得来自金属氧化物的金属与下面的硅反应并形成金属硅化物。 另外，可以通过在锗上还原金属氧化物来形成金属锗化物，无论底层的硅是否也被硅化。 在其它实施例中，直接沉积镍，并且不使用界面层。 另一方面，提供了通过气相沉积工艺沉积镍薄膜的方法。 在一些实施例中，镍薄膜通过ALD沉积。 镍薄膜可以直接用于硅化和锗化工艺。

公开(公告)号：US09006112B2

公开(公告)日：2015-04-14

申请号：US13649992

申请日：2012-10-11

Applicant: ASM International. N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/302 ,  H01L21/28 ,  H01L21/02 ,  H01L21/033 ,  H01L21/311 ,  H01L29/51

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.

Abstract translation: 通过原子层沉积使用锑反应物和氧源沉积氧化锑薄膜。 锑反应物可以包括卤化锑，如SbCl 3，锑烷基胺和锑醇盐，如Sb（OEt）3。 氧源可以是例如臭氧。 在一些实施方案中，氧化锑薄膜沉积在间歇式反应器中。 氧化锑薄膜可以用作例如蚀刻停止层或牺牲层。

公开(公告)号：US20130095664A1

公开(公告)日：2013-04-18

申请号：US13649992

申请日：2012-10-11

Applicant: ASM International. N.V.

Inventor： Raija H. Matero ,  Linda Lindroos ,  Hessel Sprey ,  Jan Willem Maes ,  David de Roest ,  Dieter Pierreux ,  Kees van der Jeugd ,  Lucia D'Urzo ,  Tom E. Blomberg

IPC: H01L21/31 ,  H01L21/311

CPC classification number: H01L21/0228 ,  C23F1/26 ,  H01L21/02175 ,  H01L21/02274 ,  H01L21/0332 ,  H01L21/2225 ,  H01L21/28194 ,  H01L21/31111 ,  H01L21/31122 ,  H01L29/513 ,  H01L29/517

Abstract: Antimony oxide thin films are deposited by atomic layer deposition using an antimony reactant and an oxygen source. Antimony reactants may include antimony halides, such as SbCl3, antimony alkylamines, and antimony alkoxides, such as Sb(OEt)3. The oxygen source may be, for example, ozone. In some embodiments the antimony oxide thin films are deposited in a batch reactor. The antimony oxide thin films may serve, for example, as etch stop layers or sacrificial layers.