公开(公告)号：US12002661B2

公开(公告)日：2024-06-04

申请号：US17113392

申请日：2020-12-07

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori ,  Melvin Verbaas

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01J37/32724 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  C23C16/50 ,  C23C16/509 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/3244 ,  H01J37/32715 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6719 ,  H01L21/67248 ,  C23C16/4412 ,  H01J2237/3321 ,  H01J2237/334

Abstract: A susceptor includes a plate part, a first heater for heating a first portion of the plate part, a second heater for heating a second portion of the plate part, and a heat insulating portion for thermally insulating the first portion and the second portion from each other on an upper surface side of the plate part.

公开(公告)号：US20220341040A1

公开(公告)日：2022-10-27

申请号：US17811978

申请日：2022-07-12

Applicant: ASM IP HOLDING B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US20220119944A1

公开(公告)日：2022-04-21

申请号：US17451299

申请日：2021-10-18

Applicant: ASM IP HOLDING B.V.

Inventor： Shinya Yoshimoto ,  Takahiro Onuma ,  Makoto Igarashi ,  Yukihiro Mori ,  Hideaki Fukuda ,  Rene Henricus Jozef Vervuurt ,  Timothee Blanquart

IPC: C23C16/455 ,  C23C16/46 ,  C23C16/52

Abstract: In accordance with some embodiments herein, methods and apparatuses for flowable deposition of thin films are described. Some embodiments herein relate to cyclical processes for gap-fill in which deposition is followed by a thermal anneal and repeated. In some embodiments, the deposition and thermal anneal are carried out in separate station. In some embodiments second module is heated to a higher temperature than the first station. In some embodiments, the thermal anneal comprises RTA.

公开(公告)号：US20210358780A1

公开(公告)日：2021-11-18

申请号：US17317794

申请日：2021-05-11

Applicant: ASM IP HOLDING B.V.

Inventor： Yukihiro Mori

IPC: H01L21/67

Abstract: A semiconductor processing system comprises a first, a second, and a third process module assembly. The third process module assembly is between the first and the second process module assemblies, and includes an opening for providing substrates to be processed in the various process module assemblies. The process modules are arranged laterally relative to the opening. The first and second process module assemblies each include an associated transfer chamber, an associated substrate transfer device, and a plurality of associated process modules attached the associated transfer chamber. The third process module assembly may include an associated transfer chamber, an associated substrate transfer device, and a single associated process module attached to the associated transfer chamber. The processing system is configured to sequentially load substrates into the process module assemblies neighboring the third process module assembly, and lastly load substrates into the process module of the third process module assembly.

公开(公告)号：US20170032956A1

公开(公告)日：2017-02-02

申请号：US14811370

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaako Anttila ,  Yukihiro Mori

IPC: H01L21/02 ,  H01L21/285

CPC classification number: H01L21/28556 ,  C23C16/04 ,  C23C16/45551 ,  C23C16/54 ,  H01L21/0262 ,  H01L21/28562 ,  H01L21/76829 ,  H01L21/76849

Abstract: In accordance with some embodiments herein, methods for deposition of thin films are provided. In some embodiments, thin film deposition is performed in a plurality of stations, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供了用于沉积薄膜的方法。 在一些实施例中，在多个站中执行薄膜沉积，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US20170029947A1

公开(公告)日：2017-02-02

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/458 ,  C23C16/52

CPC classification number: C23C16/45527 ,  C23C16/45544 ,  C23C16/4583 ,  C23C16/52 ,  C23C16/54 ,  H01L21/67161 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67745

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

Abstract translation: 根据本文的一些实施例，提供用于沉积薄膜的装置。 在一些实施例中，提供多个站，其中每个站提供不同的反应物或反应物的组合。 这些站可以彼此气体隔离，以便最小化或防止不同反应物或反应物组合之间的不希望的化学气相沉积（CVD）和/或原子层沉积（ALD）反应。

公开(公告)号：US11421321B2

公开(公告)日：2022-08-23

申请号：US14811528

申请日：2015-07-28

Applicant: ASM IP Holding B.V.

Inventor： Jun Kawahara ,  Suvi Haukka ,  Antti Niskanen ,  Eva Tois ,  Raija Matero ,  Hidemi Suemori ,  Jaakko Anttila ,  Yukihiro Mori

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/458 ,  C23C16/54 ,  H01L21/67 ,  H01L21/677

Abstract: In accordance with some embodiments herein, apparatuses for deposition of thin films are provided. In some embodiments, a plurality of stations is provided, in which each station provides a different reactant or combination of reactants. The stations can be in gas isolation from each other so as to minimize or prevent undesired chemical vapor deposition (CVD) and/or atomic layer deposition (ALD) reactions between the different reactants or combinations of reactants.

公开(公告)号：US20210398826A1

公开(公告)日：2021-12-23

申请号：US17351592

申请日：2021-06-18

Applicant: ASM IP HOLDING B.V.

Inventor： Yukihiro Mori

IPC: H01L21/67 ,  H01L21/66

Abstract: A vacuum process module has a pre-shaped ceiling and/or bottom that is shaped to bulge outwards. The shape of the ceiling and/or process modules counteracts deformation caused by vacuum pressures and/or high temperatures when processing substrates in the process module. The process module may have a side openable to a transfer chamber and an opposite side opposite the openable side. The bulge may be asymmetric, with the peak of the bulge off-center on the ceiling and closer to the opposite side than to the openable side. A rigid structure may be mounted on the ceiling to adjust the magnitude of the bulge in the ceiling. The beam may be, e.g., a rigid beam having an adjustable lift mechanism for lifting up an attached part of the ceiling. The process module may accommodate a plurality of substrates for processing, with each substrate occupying a dedicated stage in the process module.

公开(公告)号：US20210268554A1

公开(公告)日：2021-09-02

申请号：US17180275

申请日：2021-02-19

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori

IPC: B08B7/00 ,  H01L21/67

Abstract: Examples of a system dedicated for parts cleaning includes a gas supply apparatus configured to supply a cleaning gas, a first adapter connected to a gas supply port of the gas supply apparatus, an exhaust system configured to exhaust the gas supplied from the gas supply apparatus, and a second adapter connected to a gas inlet of the exhaust system.

公开(公告)号：US20210246556A1

公开(公告)日：2021-08-12

申请号：US17169440

申请日：2021-02-06

Applicant: ASM IP Holding B.V.

Inventor： Yukihiro Mori

IPC: C23C16/54 ,  C23C16/44 ,  C23C16/455

Abstract: A reactor system may comprise a plurality of reaction chambers; a plurality of transfer chambers; and/or at least two gate valves coupled to each reaction chamber of the plurality of reaction chambers. A first gate valve of the at least two gate valves may fluidly couple a first respective reaction chamber of the plurality of reaction chambers to a first transfer chamber of the plurality of transfer chambers, and a second gate valve of the at least two gate valves may fluidly couple the first respective reaction chamber to a second transfer chamber of the plurality of transfer chambers. In various embodiments, each of the plurality of transfer chambers may comprise a transfer tool, wherein each transfer tool may be configured to transfer a substrate into and/or out of multiple reaction chambers.