公开(公告)号：US10458040B2

公开(公告)日：2019-10-29

申请号：US15809088

申请日：2017-11-10

Applicant: Applied Materials, Inc.

Inventor： Paul Brillhart ,  Anzhong Chang ,  Edric Tong ,  Kin Pong Lo ,  James Francis Mack ,  Zhiyuan Ye ,  Kartik Shah ,  Errol Antonio C. Sanchez ,  David K. Carlson ,  Satheesh Kuppurao ,  Joseph M. Ranish

IPC: C23C16/40 ,  C30B25/14 ,  C30B25/08 ,  C30B25/10 ,  H01L21/67

Abstract: Embodiments provided herein generally relate to an apparatus for delivering gas to a semiconductor processing chamber. An upper quartz dome of an epitaxial semiconductor processing chamber has a plurality of holes formed therein and precursor gases are provided into a processing volume of the chamber through the holes of the upper dome. Gas delivery tubes extend from the holes in the dome to a flange plate where the tubes are coupled to gas delivery lines. The gas delivery apparatus enables gases to be delivered to the processing volume above a substrate through the quartz upper dome.

公开(公告)号：US20240310819A1

公开(公告)日：2024-09-19

申请号：US18679298

申请日：2024-05-30

Applicant: Applied Materials, Inc.

Inventor： Ala Moradian ,  Elizabeth Neville ,  Umesh Madhav Kelkar ,  Mark R. Denome ,  Prashanth Kothnur ,  Karthik Ramanathan ,  Kartik Shah ,  Orlando Trejo ,  Sergey Meirovich

IPC: G05B19/418 ,  G05B13/02 ,  H01L21/67

CPC classification number: G05B19/41885 ,  G05B13/027 ,  G05B2219/32335 ,  G05B2219/32359 ,  G05B2219/45031 ,  H01L21/67276

Abstract: A first selection of a first fabrication process and/or first manufacturing equipment to perform manufacturing operations of the first fabrication process is received. The first selection is input into a digital replica of the first manufacturing equipment, where the digital replica outputs physical conditions of the first fabrication process. Environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process is determined. A modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment is determined. Applying the modification to the first fabrication and/or providing the modification for display by a graphical user interface (GUI) is performed.

公开(公告)号：US11732355B2

公开(公告)日：2023-08-22

申请号：US16662134

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Eric Kihara Shono ,  Kartik Shah ,  Christopher S. Olsen ,  Agus Sofian Tjandra ,  Tobin Kaufman-Osborn ,  Taewan Kim ,  Hansel Lo

IPC: C23C16/452 ,  C23C16/455 ,  B01F23/10 ,  B01F25/421 ,  H01J37/32 ,  B01F25/10 ,  B01F25/314 ,  B01F35/511 ,  H01L21/67

CPC classification number: C23C16/452 ,  B01F23/10 ,  B01F23/19 ,  B01F25/102 ,  B01F25/3141 ,  B01F25/31423 ,  B01F25/421 ,  B01F35/511 ,  C23C16/45536 ,  C23C16/45548 ,  C23C16/45561 ,  H01J37/3244 ,  H01J37/32357 ,  H01L21/67017

Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.

公开(公告)号：US11492704B2

公开(公告)日：2022-11-08

申请号：US16539317

申请日：2019-08-13

Applicant: Applied Materials, Inc.

Inventor： Shu-Kwan Lau ,  Lit Ping Lam ,  Preetham Rao ,  Kartik Shah ,  Ian Ong ,  Nyi O. Myo ,  Brian H. Burrows

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

Abstract: Embodiments described herein generally relate to apparatus for fabricating semiconductor devices. A gas injection apparatus is coupled to a first gas source and a second gas source. Gases from the first gas source and second gas source may remain separated until the gases enter a process volume in a process chamber. A coolant is flowed through a channel in the gas injection apparatus to cool the first gas and the second gas in the gas injection apparatus. The coolant functions to prevent thermal decomposition of the gases by mitigating the influence of thermal radiation from the process chamber. In one embodiment, the channel surrounds a first conduit with the first gas and a second conduit with the second gas.

公开(公告)号：US11486038B2

公开(公告)日：2022-11-01

申请号：US16776204

申请日：2020-01-29

Applicant: Applied Materials, Inc.

Inventor： Eric Kihara Shono ,  Vishwas Kumar Pandey ,  Christopher S. Olsen ,  Kartik Shah ,  Hansel Lo ,  Tobin Kaufman-Osborn ,  Rene George ,  Lara Hawrylchak ,  Erika Hansen

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/52 ,  C23C16/458 ,  C23C16/40

Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.

公开(公告)号：US20220119948A1

公开(公告)日：2022-04-21

申请号：US17074035

申请日：2020-10-19

Applicant: Applied Materials, Inc.

Inventor： Jared Ahmad Lee ,  Sanjeev Baluja ,  Joseph AuBuchon ,  Kenneth Brian Doering ,  Dhritiman Subha Kashyap ,  Kartik Shah

IPC: C23C16/455 ,  C23C16/44

Abstract: Gas distribution assemblies and methods for providing a flow of gases to a process station are described. The gas distribution assemblies comprise a pumping liner with a showerhead and a gas funnel positioned therein. The pumping liner has an inner wall that slants at a first angle relative to a central axis of the gas distribution assembly so that the inner wall adjacent the bottom wall of the pumping liner is closer to the central axis than the inner wall adjacent the top wall. The gas funnel and pumping liner form a plenum between the outer wall of the gas funnel, a cavity in the bottom wall of the gas funnel and the inner wall of the pumping liner.

公开(公告)号：US11049696B2

公开(公告)日：2021-06-29

申请号：US16823936

申请日：2020-03-19

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Kartik Shah ,  Christopher S. Olsen ,  Agus Sofian Tjandra ,  Hansel Lo ,  Eric Kihara Shono ,  Hemantha Raju

IPC: C23C16/50 ,  H01J37/32 ,  C23C16/455

Abstract: Embodiments of the present disclosure generally relate to a processing chamber for conformal oxidation of high aspect ratio structures. The processing chamber includes a chamber body with a first side and a second side opposite the first side, and a flow assembly disposed in the first side. The flow assembly includes a flow divider to direct fluid flow away from a center of a substrate disposed in a processing region of the processing chamber. The flow divider includes a crescent shaped first side, a top, and a bottom. The processing chamber also includes a distributed pumping structure located adjacent to the second side. The flow assembly is designed to reduce flow constriction of the radicals, leading to increased radical concentration and flux.

公开(公告)号：US20210166921A1

公开(公告)日：2021-06-03

申请号：US16701986

申请日：2019-12-03

Applicant: Applied Materials, Inc.

Inventor： Elizabeth Neville ,  Satish Radhakrishnan ,  Kartik Shah ,  Vinay Prabhakar ,  Venkata Sharat Chandra Parimi ,  Sungwon Ha

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/687

Abstract: An example semiconductor processing system may include a chamber body having sidewalls and a base. The processing system may also include a substrate support extending through the base of the chamber body. The substrate support may include a support platen configured to support a semiconductor substrate, and a shaft coupled with the support platen. The processing system may further include a plate coupled with the shaft of the substrate support. The plate may have an emissivity greater than 0.5. In some embodiments, the plate may include a radiation shied disposed proximate the support platen. In some embodiments, the plate may include a pumping plate disposed proximate the base of the chamber body. In some embodiments, the emissivity of the plate may range between about 0.5 and about 0.95.

公开(公告)号：US10930543B2

公开(公告)日：2021-02-23

申请号：US16109945

申请日：2018-08-23

Applicant: Applied Materials, Inc.

Inventor： Anhthu Ngo ,  Zuoming Zhu ,  Balasubramanian Ramachandran ,  Paul Brillhart ,  Edric Tong ,  Anzhong Chang ,  Kin Pong Lo ,  Kartik Shah ,  Schubert S. Chu ,  Zhepeng Cong ,  James Francis Mack ,  Nyi O. Myo ,  Kevin Joseph Bautista ,  Xuebin Li ,  Yi-Chiau Huang ,  Zhiyuan Ye

IPC: H01L21/687 ,  C30B25/12 ,  B05C13/02 ,  B05C13/00 ,  H01L21/673 ,  C23C16/458

Abstract: In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

公开(公告)号：US10808310B2

公开(公告)日：2020-10-20

申请号：US16805419

申请日：2020-02-28

Applicant: Applied Materials, Inc.

Inventor： Vishwas Kumar Pandey ,  Kartik Shah ,  Edric Tong ,  Prashanth Vasudeva

IPC: C23C16/40 ,  C23C8/24 ,  C23C16/455 ,  H01L21/02

Abstract: Embodiments described herein generally relate to a processing chamber having one or more gas inlet ports located at a bottom of the processing chamber. Gas flowing into the processing chamber via the one or more gas inlet ports is directed along a lower side wall of the processing chamber by a plate located over each of the one or more gas inlet ports or by an angled opening of each of the one or more gas inlet ports. The one or more gas inlet ports and the plates may be located at one end of the processing chamber, and the gas flow is directed towards an exhaust port located at the opposite end of the processing chamber by the plates or the angled openings. Thus, more gas can be flowed into the processing chamber without dislodging particles from a lid of the processing chamber.