公开(公告)号：US5457709A

公开(公告)日：1995-10-10

申请号：US223341

申请日：1994-04-04

申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

IPC分类号： H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/3419

摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“活性”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。

公开(公告)号：US4999697A

公开(公告)日：1991-03-12

申请号：US244753

申请日：1988-09-14

申请人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

发明人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

IPC分类号： H01L29/73 ,  G06F11/10 ,  G11C11/56 ,  H01L21/20 ,  H01L21/203 ,  H01L21/331 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/08 ,  H01L29/201 ,  H01L29/205 ,  H01L29/737 ,  H03B19/14 ,  H03M1/34 ,  H03M1/36

CPC分类号： B82Y10/00 ,  G06F11/10 ,  G11C11/56 ,  H01L29/0895 ,  H01L29/205 ,  H01L29/7376 ,  H03B19/14 ,  H03M1/368 ,  G11C2211/5614

摘要： A plurality of decoupled quantum wells in a transistor device enables such device to operate with multiple-peak characteristics. The device is suitable for a variety of circuit applications in switching systems and in central processor logic units and memories; specific applications include frequency multipliers, waveform scramblers, parity-bit generators, analog-to digital converters, and multiple-valued logic units.

公开(公告)号：US4902912A

公开(公告)日：1990-02-20

申请号：US366340

申请日：1989-06-13

申请人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen ,  Masakazu Shoji ,  Deborah Sivco

发明人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen ,  Masakazu Shoji ,  Deborah Sivco

IPC分类号： G11C11/56 ,  H01L29/76 ,  H01L29/88 ,  H03B19/16

CPC分类号： B82Y10/00 ,  B82Y30/00 ,  G11C11/56 ,  H01L29/7606 ,  H01L29/882 ,  H03B19/16 ,  G11C2211/5614

摘要： A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure.

摘要翻译： 具有多个负电阻区域并且在这些区域中具有基本相等的电流峰值的半导体集成谐振隧道装置可用作高度紧凑的元件，例如在设计用于三元逻辑运算，倍频，波形加扰，存储器操作 奇偶校验位产生和同轴线驱动。 该器件可以通过在衬底上的层沉积制成，并且包括在触点之间的谐振隧穿结构，使得并排的第一和第三触点在一侧，并且第二触点位于谐振隧道的相反侧 结构体。

公开(公告)号：US4679061A

公开(公告)日：1987-07-07

申请号：US745277

申请日：1985-06-14

申请人： Federico Capasso ,  Alfred Y. Cho ,  Albert L. Hutchinson ,  Khalid Mohammed

发明人： Federico Capasso ,  Alfred Y. Cho ,  Albert L. Hutchinson ,  Khalid Mohammed

IPC分类号： H01L31/0264 ,  G02B6/12 ,  H01L31/0352 ,  H01L31/10 ,  H01L33/00 ,  H01L27/12

CPC分类号： B82Y20/00 ,  H01L31/035236

摘要： Photoconductive gain is observed in a device comprising a superlattice having well and barrier layers, and cladding layers on the opposite sides of the superlattice with the barrier layers of the superlattice having an energy bandgap greater than the bandgap of the cladding layers.

摘要翻译： 在包括具有良好和阻挡层的超晶格的器件中观察到光电增益，并且在超晶格的相对侧上的覆层与超晶格的势垒层具有大于包覆层的带隙的能带隙。

公开(公告)号：US4236122A

公开(公告)日：1980-11-25

申请号：US900123

申请日：1978-04-26

申请人： Alfred Y. Cho ,  Won-Tien Tsang

发明人： Alfred Y. Cho ,  Won-Tien Tsang

IPC分类号： H01L21/203 ,  H01L27/15 ,  H01S5/22 ,  H01S5/227 ,  H01S3/19

CPC分类号： H01L21/02395 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02631 ,  H01L21/02658 ,  H01L27/153 ,  H01S5/22 ,  H01S5/227

摘要： Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top than at its base, the configuration is essentially self-masking. That is, the layers in the channel are physically separate from those on the ridges, as would be metallic contacts deposited on the layers. This technique is employed in the fabrication of a plurality of self-aligned, stripe geometry, mesa double heterostructure junction lasers.

摘要翻译： 平行通道以形成在半导体本体中的脊分开，使得每个通道在其底部比在其顶部更宽。 分子束外延用于在脊和通道中沉积半导体层。 因为每个通道在其顶部比在其底部更窄，所以配置基本上是自我掩蔽的。 也就是说，通道中的层与脊上的那些物理上分离，如沉积在层上的金属触点。 该技术用于制造多个自对准条纹几何，台面双异质结结形激光器。

公开(公告)号：US5332690A

公开(公告)日：1994-07-26

申请号：US107541

申请日：1993-08-17

申请人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

发明人： Alfred Y. Cho ,  Deborah L. Sivco ,  Daryoosh Vakhshoori

IPC分类号： G02B6/12 ,  G02B6/30 ,  G02B6/42 ,  G02B27/09 ,  H01S5/00 ,  H01L21/20

CPC分类号： G02B6/42 ,  G02B19/0028 ,  G02B19/0052 ,  G02B27/09 ,  G02B27/0994 ,  G02B6/4206 ,  G02B2006/12195 ,  G02B6/305 ,  Y10S438/978

摘要： This invention embodies an integrated optical package including an optical component having an asymmetric modal output, and a lens integrated with the component for coupling to another optical component having a large modal area. The coupling is achieved by the use of a Polymeric Elongated Waveguide Emulating (PEWE) lens. In the exemplary embodiment the first optical component is a modulator, and the other optical component is an optical fiber. A facet of the modulator is etched by reactive ion etching (REE) which allows integration of the PEWE lens on a common substrate. The lens is manufactured using a polymer film on a dielectric cladding layer. The fabrication relies on the remelt and reflow properties of polymer films to provide a smooth adiabatic mode contraction from a circular (optical fiber) mode (.apprxeq.6 .mu.m in diameter) to a semiconductor mode (.apprxeq.1 .mu.m) over a length of 250 .mu.m. The PEWE lens permits coupling with an insertion loss of 0.5 dB and 80 percent-coupling efficiency, even though the lens is butt-coupled to a fiber without any external lens. The PEWE lens allows the realization of better than 80 percent direct fiber butt-coupling efficiencies to semiconductor lasers, photodetectors, optical modulators, switches and amplifiers with a simultaneous order of magnitude relaxation of the alignment tolerances typically needed for the coupling of semiconductor devices with single-mode fibers.

摘要翻译： 本发明体现了一种集成的光学封装，其包括具有不对称模态输出的光学部件，以及与该部件集成的透镜，用于耦合到具有大模态面积的另一光学部件。 通过使用聚合物伸长波导模拟（PEWE）透镜来实现耦合。 在示例性实施例中，第一光学部件是调制器，另一个光学部件是光纤。 通过反应离子蚀刻（REE）蚀刻调制器的一面，其允许将PEWE透镜集成在公共基板上。 在电介质包覆层上使用聚合物膜制造透镜。 该制造依赖于聚合物膜的重熔和回流性能，以提供从圆形（光纤）模式（直径约6μm）到半导体模式（约1μm）的平滑绝热模式，其长度为250 亩 即使透镜与任何外部透镜的光纤对接，PEWE透镜也能够实现0.5dB和80％耦合效率的插入损耗耦合。 PEWE透镜允许对半导体激光器，光电探测器，光调制器，开关和放大器实现优于80％的直接光纤对接耦合效率，同时具有通过半导体器件与单个耦合的通常所需的对准公差的同时数量级的松弛 模式光纤。

公开(公告)号：US5226053A

公开(公告)日：1993-07-06

申请号：US815307

申请日：1991-12-27

申请人： Alfred Y. Cho ,  Erdmann F. Schubert ,  Li-Wei Tu ,  George J. Zydzik

发明人： Alfred Y. Cho ,  Erdmann F. Schubert ,  Li-Wei Tu ,  George J. Zydzik

IPC分类号： H01L33/10 ,  H01L33/40 ,  H01L33/42 ,  H01L33/46

CPC分类号： H01L33/40 ,  H01L33/105 ,  H01L33/42 ,  H01L33/465

摘要： This invention embodies a LED in which an optical cavity of the LED, which includes an active layer (or region) and confining layers, is within a resonant Fabry-Perot cavity. The LED with the resonant cavity, hereinafter called Resonant Cavity LED or RCLED, has a higher spectral purity and higher light emission intensity relative to conventional LEDs. The Fabry-Perot cavity is formed by a highly reflective multilayer distributed Bragg reflector (DBR) mirror (R.sub.B .gtoreq.0.99) and a mirror with a low to moderate reflectivity (R.sub.T .perspectiveto.0.25-0.99). The DBR mirror, placed in the RCLED structure between the substrate and the confining bottom layer, is used as a bottom mirror. Presence of the less reflective top mirror above the active region leads to an unexpected improvement in directional light emission characteristics. The use of a Fabry-Perot resonant cavity formed by these two mirrors results in optical spontaneous light emission from the active region, which is restricted to the modes of the cavity. While the bottom DBR mirror reduces absorption by the substrate of that light portion which is emitted toward the substrate, the two mirrors of the resonant cavity reduce the isotropic emission and improve the light emission characteristics in terms of a more directed (anisotropic) emission.

公开(公告)号：US4853753A

公开(公告)日：1989-08-01

申请号：US117583

申请日：1987-11-05

申请人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

发明人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

IPC分类号： G11C11/38 ,  G11C11/56 ,  H01L27/10 ,  H01L29/76 ,  H01L29/80 ,  H01L29/88 ,  H03B19/16

CPC分类号： B82Y10/00 ,  G11C11/38 ,  G11C11/56 ,  H01L29/7606 ,  H01L29/882 ,  H03B19/16 ,  G11C2211/5614 ,  Y10S257/926

摘要： A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure. Disclosed further are (two-terminal) resonant-tunneling diodes as incorporated in memory devices, e.g., in lieu of 2-transistsor flip-flops; room-temperature device operation; and devices comprising an essentially undoped accelerator region between an emitter contact and a resonant-tunneling structure.

摘要翻译： 具有多个负电阻区域并且在这些区域中具有基本相等的电流峰值的半导体集成谐振隧道装置可用作高度紧凑的元件，例如在设计用于三元逻辑运算，倍频，波形加扰，存储器操作 奇偶校验位产生和同轴线驱动。 该器件可以通过在衬底上的层沉积制成，并且包括在触点之间的谐振隧穿结构，使得并排的第一和第三触点在一侧，并且第二触点位于谐振隧道的相反侧 结构体。 还公开了（二端）谐振隧道二极管，如并入存储器件中，例如代替2-转移触发器; 室温装置操作; 以及包括在发射极接触和谐振隧道结构之间的基本上未掺杂的加速器区域的器件。

公开(公告)号：US4231050A

公开(公告)日：1980-10-28

申请号：US7790

申请日：1979-01-30

申请人： Horace C. Casey, Jr. ,  Alfred Y. Cho ,  Philip W. Foy

发明人： Horace C. Casey, Jr. ,  Alfred Y. Cho ,  Philip W. Foy

IPC分类号： H01L33/00 ,  H01L21/033 ,  H01L21/203 ,  H01L21/314 ,  H01L29/06 ,  H01L31/00

CPC分类号： H01L21/314 ,  H01L21/0332 ,  H01L29/0638

摘要： Surface recombination current in GaAs devices is reduced by means of a semi-insulating, oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body and is then masked. Diffusion of suitable impurities through a window in the mask converts the exposed portions of the AlGaAs layer to low resistivity and modifies the conductivity of the underlying zone of the GaAs body. The peripheral portions of the AlGaAs layer, however, remain semi-insulating and are effective to reduce the surface recombination velocity - diffusion length product by more than an order of magnitude.

摘要翻译： 通过MBE生长的半绝缘，氧，铁或铬掺杂的AlGaAs单晶层，GaAs器件中的表面复合电流降低。 AlGaAs层在GaAs体上生长，然后被掩蔽。 通过掩模中的窗口扩散合适的杂质将AlGaAs层的暴露部分转换成低电阻率并且改变GaAs体的下面的区域的导电性。 然而，AlGaAs层的外围部分保持半绝缘，并且有效地将表面复合速度 - 扩散长度乘积减少超过一个数量级。

公开(公告)号：US4181544A

公开(公告)日：1980-01-01

申请号：US956066

申请日：1978-10-30

申请人： Alfred Y. Cho

发明人： Alfred Y. Cho

IPC分类号： C23C14/54 ,  C23C14/56 ,  C30B23/06 ,  H01L21/203 ,  C23C13/08

CPC分类号： C23C14/56 ,  C23C14/541 ,  C30B23/063 ,  Y10S148/006 ,  Y10S148/169

摘要： Apparatus for molecular beam deposition sequentially on a plurality of substrates is described. The apparatus includes a growth chamber and an auxiliary (sample-exchange) chamber coupled by an air-lock. The substrates are carried by a rod which can be translated via a bellows mechanism between the two chambers. The auxiliary chamber includes a port which permits access to the samples so that the entire rod-bellows mechanism need not be removed in order to change samples. The auxiliary chamber also includes means for maintaining therein an inert atmosphere at a pressure in excess of atmospheric pressure especially when the port is open. The growth chamber includes a cylindrical liquid nitrogen (LN.sub.2) shroud which has an aperture in its wall to admit molecular beams to only a heated (growth) substrate. The unheated (idle) substrates are thus shaded from the beams. In addition, the shroud surrounds both the growth substrate and idle substrates in the growth chamber. This configuration of the shroud reduces the likelihood of contamination of idle substrates. In addition, the growth chamber includes means for selectively heating the growth substrate, the idle substrates remaining unheated so as to reduce the evaporation of high vapor pressure elements therefrom.Another aspect of the invention is the provision of uniquely designed pyrolytic BN effusion cells for generating the various molecular beams.

摘要翻译： 描述了在多个基板上顺序分子束沉积的装置。 该装置包括通过空气锁耦合的生长室和辅助（取样器 - 交换）室。 基板由杆组成，杆可通过两个腔室之间的波纹管机构平移。 辅助室包括允许进入样品的端口，使得整个杆 - 波纹管机构不需要被移除以便改变样品。 辅助室还包括用于在其中保持超过大气压力的压力的惰性气氛的装置，特别是当端口打开时。 生长室包括圆柱形液氮（LN2）护罩，其在其壁上具有孔，以将分子束仅允许加热（生长）基底。 因此，未加热（空闲）基板由梁遮蔽。 此外，护罩围绕生长衬底和生长室中的空闲衬底。 护罩的这种构造减少了空闲基板的污染的可能性。 此外，生长室包括用于选择性地加热生长衬底的装置，空闲衬底保持不加热，从而减少高蒸气压元件的蒸发。 本发明的另一方面是提供独特设计的热解BN渗流池用于产生各种分子束。