公开(公告)号：US20180025919A1

公开(公告)日：2018-01-25

申请号：US15535627

申请日：2015-12-10

Applicant: DENKA COMPANY LIMITED

Inventor： Takeshi MIYAKAWA ,  Daisuke GOTO

IPC: H01L21/48 ,  B28B11/24 ,  H01L23/373 ,  C04B38/06 ,  C04B41/88 ,  B28B1/14 ,  C04B35/565

CPC classification number: H01L21/4807 ,  B22D19/16 ,  B22D21/007 ,  B22F2999/00 ,  B28B1/14 ,  B28B11/243 ,  C04B35/565 ,  C04B35/6263 ,  C04B35/63432 ,  C04B35/63488 ,  C04B38/06 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2111/00844 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/402 ,  C04B2235/5436 ,  C04B2235/5472 ,  C04B2235/602 ,  C04B2235/6027 ,  C04B2235/606 ,  C04B2235/61 ,  C04B2235/616 ,  C04B2235/9607 ,  C22C1/1015 ,  C22C29/065 ,  H01L23/3731 ,  H01L2924/0002 ,  H01L2924/00 ,  C04B38/00 ,  C04B41/4521 ,  C04B41/4523 ,  C22C2001/1021 ,  B22F3/26

Abstract: A silicon carbide composite that is lightweight and has high thermal conductivity as well as a low thermal expansion coefficient close to that of a ceramic substrate, particularly a silicon carbide composite material suitable for heat dissipating components that are required to be particularly free of warping, such as heat sinks. A method for manufacturing a silicon carbide composite obtained by impregnating a porous silicon carbide molded body with a metal having aluminum as a main component, wherein the method for manufacturing a silicon carbide composite material is characterized in that the porous silicon carbide molded article is formed by a wet molding method, and preferably the wet molding method is a wet press method or is a wet casting method.

公开(公告)号：US20160358840A1

公开(公告)日：2016-12-08

申请号：US15119052

申请日：2015-02-20

Applicant: Denka Company Limited

Inventor： Ryota AONO ,  Kosuke WADA ,  Masao TSUICHIHARA ,  Takeshi MIYAKAWA

IPC: H01L23/373 ,  H01L23/498 ,  C04B37/02

Abstract: [Problem] To obtain a ceramic circuit substrate having high bonding strength, excellent heat cycle resistance, enhanced reliability of operation as an electronic device, and excellent heat dissipation properties.[Solution] A ceramic circuit substrate in which metal plates and both main surfaces of a ceramic substrate are bonded via silver-copper brazing material layers, the ceramic Cit quit substrate characterized in that the silver-copper brazing material layers are formed from a silver-copper brazing material including 0.3-7.5 parts by mass of carbon fibers and 1.0-9.0 parts by mass of at least one active metal selected from titanium, zirconium, hafnium, niobium, tantalum, vanadium, and tin with respect to 75-98 parts by mass of silver powder and 2-25 parts by mass of copper powder totaling 100 part by mass, with the carbon fibers having an average length of 15-400 μm, an average diameter of 5-25 μm and an average aspect ratio of 3-28.

Abstract translation: [解决方案]陶瓷电镀基板，其中金属板和陶瓷基板的两个主表面通过银 - 铜钎料层接合，陶瓷Cit离子基板的特征在于，银 - 铜钎焊材料层由银 - 含有0.3〜7.5质量份的碳纤维的铜钎焊材料和选自钛，锆，铪，铌，钽，钒和锡中的至少一种活性金属相对于75-98份的1.0-9.0质量份 银粉的质量和总计100质量份的2〜25质量份的铜粉，碳纤维的平均长度为15〜400μm，平均直径为5〜25μm，平均长径比为3〜 28。

公开(公告)号：US20200335415A1

公开(公告)日：2020-10-22

申请号：US16822225

申请日：2020-03-18

Applicant: DENKA COMPANY LIMITED

Inventor： Daisuke GOTO ,  Takeshi MIYAKAWA ,  Yosuke ISHIHARA

IPC: H01L23/373 ,  H01L23/14 ,  H01L23/12 ,  H01L23/36 ,  C22F1/04 ,  H01L21/48 ,  H01L23/367

Abstract: To provide a method for manufacturing a heat dissipation component having excellent heat dissipation properties, in which there is minimal return of warping after the bonding of a circuit board, and to provide a heat dissipation component manufactured using the method. Provided is a method for manufacturing a warped flat-plate-shaped heat dissipation component containing a composite part that comprises silicon carbide and an aluminum alloy, wherein the method for manufacturing the heat dissipation component is characterized in that the heat dissipation component is sandwiched in a concave-convex mold having a surface temperature of at least 450° C. and having a pair of opposing spherical surfaces measuring 7000-30,000 mm in curvature radius, and pressure is applied for 30 seconds or more at a stress of 10 kPa or more such that the temperature of the heat dissipation component reaches at least 450° C.

公开(公告)号：US20190093201A1

公开(公告)日：2019-03-28

申请号：US16084475

申请日：2016-12-27

Applicant: DENKA COMPANY LIMITED

Inventor： Yosuke ISHIHARA ,  Takeshi MIYAKAWA ,  Hideo TSUKAMOTO ,  Kazunori KOYANAGI

IPC: C22C26/00 ,  B22F3/17 ,  B22F3/26 ,  H01L23/373

Abstract: Provided is an aluminum-diamond-based composite which can be processed with high dimensional accuracy. The flat-plate-shaped aluminum-diamond-based composite is coated with a surface layer of which the entire surface has an average film thickness of 0.01-0.2 mm and which contains not less than 80 volume % of a metal containing an aluminum.

公开(公告)号：US20180215668A1

公开(公告)日：2018-08-02

申请号：US15748420

申请日：2015-07-31

Applicant: Denka Company Limited

Inventor： Akimasa YUASA ,  Takeshi MIYAKAWA ,  Daisuke GOTO

IPC: C04B35/565 ,  B22D19/14 ,  C04B41/88 ,  C04B38/00 ,  C22C1/10

CPC classification number: C04B35/565 ,  B22D19/00 ,  B22D19/02 ,  B22D19/14 ,  C04B35/573 ,  C04B35/6316 ,  C04B35/645 ,  C04B38/00 ,  C04B38/0032 ,  C04B41/009 ,  C04B41/5155 ,  C04B41/88 ,  C04B2111/00844 ,  C04B2111/00931 ,  C04B2235/3418 ,  C04B2235/3826 ,  C04B2235/401 ,  C04B2235/402 ,  C04B2235/428 ,  C04B2235/5472 ,  C04B2235/6027 ,  C04B2235/616 ,  C04B2235/783 ,  C04B2235/786 ,  C04B2235/9607 ,  C22C1/10 ,  C22C1/1036 ,  C22C1/1068 ,  C22C2001/1021 ,  H01L21/4871 ,  H01L23/3731 ,  H01L23/3736 ,  C04B41/4521 ,  C04B41/4523 ,  C04B41/5096 ,  C04B41/515

Abstract: [Problem to be Solved]Provided are an aluminum-silicon-carbide composite having high thermal conductivity, low thermal expansion, and low specific gravity and a method for producing the composite.[Solution]Provided is an aluminum-silicon-carbide composite formed by impregnating a porous silicon carbide molded body with an aluminum alloy. The ratio of silicon carbide in the composite is 60 vol % or more, and the composite contains 60-75 mass % of silicon carbide having a particle diameter of 80 μm or more and 800 μm or less, 20-30 mass % of silicon carbide having a particle diameter of 8 μm or more and less than 80 μm, and 5-10 mass % of silicon carbide having a particle diameter of less than 8

公开(公告)号：US20170181272A1

公开(公告)日：2017-06-22

申请号：US15327159

申请日：2015-07-29

Applicant: DENKA COMPANY LIMITED

Inventor： Ryota AONO ,  Akimasa YUASA ,  Takeshi MIYAKAWA

IPC: H05K1/02 ,  H05K3/46 ,  B23K1/00 ,  H05K1/03 ,  C04B37/02 ,  C09K5/14

CPC classification number: H05K1/0271 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  C04B37/02 ,  C04B37/026 ,  C04B2237/125 ,  C04B2237/366 ,  C04B2237/407 ,  C04B2237/74 ,  C09K5/14 ,  H01L23/3735 ,  H01L2924/0002 ,  H05K1/0204 ,  H05K1/0306 ,  H05K1/053 ,  H05K3/022 ,  H05K3/061 ,  H05K3/067 ,  H05K3/4611 ,  H05K2201/068 ,  H05K2203/0285 ,  H01L2924/00

Abstract: [Problem] To obtain a ceramic circuit board having superior crack-resistance with respect to ultrasonic bonding.[Solution] The abovementioned problem is solved by a ceramic circuit board characterized in that a metal circuit board is bonded to one surface of a ceramic substrate and a metal heat radiation plate is bonded to the other surface of the ceramic substrate, wherein the crystal grain size in the metal circuit board is at least 20 μm and at most 70 μm. This ceramic circuit board can be manufactured by arranging the metal circuit board on one surface of the ceramic substrate and arranging the metal heat radiation plate on the other surface of the ceramic substrate, and bonding in a vacuum of at most 1×10−3 Pa, at a bonding temperature of at least 780° C. and at most 850° C., for a retention time of at least 10 minutes and at most 60 minutes.

公开(公告)号：US20170162469A1

公开(公告)日：2017-06-08

申请号：US15115955

申请日：2015-02-02

Applicant: DENKA COMPANY LIMITED

Inventor： Motonori KINO ,  Hideki HIROTSURU ,  Takeshi MIYAKAWA

IPC: H01L23/373 ,  B23P15/26 ,  H01L21/48

CPC classification number: H01L23/3738 ,  B23P15/26 ,  B23P2700/10 ,  H01L21/4871 ,  H01L23/367 ,  H01L23/3731 ,  H01L23/3735 ,  H01L23/3736 ,  H01L2924/0002 ,  H01L2924/00

Abstract: [Problem] To inexpensively provide a heat dissipating component that has thermal conductivity, as well as a low specific gravity, and a coefficient of thermal expansion close to that of a ceramic substrate, and furthermore having warpage so as to be able to be joined with good closeness of contact to a heat dissipating component or the like. [Solution] A silicon carbide composite which is a plate-shaped composite formed by impregnation of a porous silicon carbide molded article by a metal having aluminum as a main component, wherein the amount of warpage with respect to 10 cm of length of the main surface of the composite is 250 μm or less, and the amount of warpage of a power module using the plate-shaped composite is 250 μm or less; and a heat dissipating component using the same.