公开(公告)号：US20100006032A1

公开(公告)日：2010-01-14

申请号：US12501195

申请日：2009-07-10

申请人： Kimberly Hinckley ,  Yizhen Zhang ,  Manuel A. Hernandez ,  Won B. Bang ,  Dmitry Lubomirsky

发明人： Kimberly Hinckley ,  Yizhen Zhang ,  Manuel A. Hernandez ,  Won B. Bang ,  Dmitry Lubomirsky

IPC分类号： C23C16/00

CPC分类号： C23C16/452 ,  C23C16/4481 ,  C23C16/45512 ,  C23C16/45591

摘要： Apparatus for use with a processing chamber are provided. In one aspect a blocker plate is provided including an annular plate having an inner portion of a first thickness and the annular plate having an aperture pattern including a center portion, a first patterned portion concentrically disposed around the center portion and comprising a first plurality of apertures having a first number of apertures, an second patterned portion concentrically disposed around the first patterned portion and comprising a second plurality of apertures having a second number of apertures greater than the first number of apertures, a perimeter portion concentrically disposed around the second patterned portion, and an outer portion comprising a raised concentric portion disposed on a perimeter of the annular plate. In another aspect, a second, third, and fourth blocker plates are provided. Additionally, a mixing apparatus and a liquid evaporating apparatus for use in a processing chamber are provided.

摘要翻译： 提供了一种用于处理室的设备。 在一个方面，提供了阻挡板，其包括具有第一厚度的内部部分的环形板，并且环形板具有包括中心部分的孔图案，第一图案化部分同心地设置在中心部分周围，并且包括第一多个孔 具有第一数量的孔，第二图案部分同心地设置在第一图案化部分周围，并且包括第二多个孔，其具有大于第一数量孔的第二数量的孔，围绕第二图案化部分同心设置的周边部分， 以及包括设置在所述环形板的周边上的升高的同心部分的外部部分。 另一方面，提供第二，第三和第四阻滞板。 此外，提供了一种用于处理室的混合装置和液体蒸发装置。

公开(公告)号：US20130082197A1

公开(公告)日：2013-04-04

申请号：US13251714

申请日：2011-10-03

申请人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

发明人： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC分类号： G21K1/00

CPC分类号： H01J37/32091 ,  H01J37/32422

摘要： Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

公开(公告)号：US20110011338A1

公开(公告)日：2011-01-20

申请号：US12836726

申请日：2010-07-15

申请人： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

发明人： Kien N. Chuc ,  Qiwei Liang ,  Hanh D. Nguyen ,  Xinglong Chen ,  Matthew Miller ,  Soonam Park ,  Toan Q. Tran ,  Adib Khan ,  Jang-Gyoo Yang ,  Dmitry Lubomirsky ,  Shankar Venkataraman

IPC分类号： C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/452 ,  C23C16/45574 ,  H01J37/3244 ,  H01J37/32449 ,  Y10T137/85938

摘要： Apparatus and methods for gas distribution assemblies are provided. In one aspect, a gas distribution assembly is provided comprising an annular body comprising an annular ring having an inner annular wall, an outer wall, an upper surface, and a bottom surface, an upper recess formed into the upper surface, and a seat formed into the inner annular wall, an upper plate positioned in the upper recess, comprising a disk-shaped body having a plurality of first apertures formed therethrough, and a bottom plate positioned on the seat, comprising a disk-shaped body having a plurality of second apertures formed therethrough which align with the first apertures, and a plurality of third apertures formed between the second apertures and through the bottom plate, the bottom plate sealingly coupled to the upper plate to fluidly isolate the plurality of first and second apertures from the plurality of third apertures.

摘要翻译： 提供了用于气体分配组件的装置和方法。 一方面，提供了一种气体分配组件，包括环形体，该环形体包括具有内环形壁，外壁，上表面和底表面的环形环，形成在上表面中的上凹部，以及形成 位于所述内部环形壁中的位于所述上部凹部中的上板，包括具有穿过其形成的多个第一孔的盘状体和位于所述座上的底板，所述底板包括具有多个第二孔的盘状体 通过其形成的孔与第一孔对准，以及形成在第二孔之间并穿过底板的多个第三孔，底板密封地联接到上板，以将多个第一和第二孔与多个 第三孔。

公开(公告)号：US20160035544A1

公开(公告)日：2016-02-04

申请号：US14614199

申请日：2015-02-04

申请人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvill

发明人： Dmitry Lubomirsky ,  Son T. Nguyen ,  Anh N. Nguyen ,  David Palagashvill

IPC分类号： H01J37/32 ,  H01L21/687 ,  C23C16/52 ,  H01L21/67 ,  C23C16/458 ,  C23C16/46

CPC分类号： H01J37/32724 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68785

摘要： A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.

摘要翻译： 用独立的隔离加热器区域描述晶片载体。 在一个示例中，载体具有用于承载用于制造工艺的工件的圆盘，具有多个热耦合到圆盘的热隔离块的加热器板，并且每个具有用于加热加热器板的相应块的加热器， 冷却板固定并加热耦合到加热板，冷却板具有一个冷却通道，用于承载传热流体以从冷却板传递热量。

公开(公告)号：US09068265B2

公开(公告)日：2015-06-30

申请号：US13363342

申请日：2012-01-31

申请人： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

发明人： Dmitry Lubomirsky ,  Kartik Ramaswamy ,  Kallol Bera ,  Jennifer Sun

IPC分类号： B05B5/00 ,  B05B1/14 ,  C23C16/509 ,  C23C16/455 ,  H01J37/32

CPC分类号： C23C16/5096 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45572 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32559

摘要： Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.

摘要翻译： 本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。 气体分配板组件包括具有前侧和后侧的基板，以及与基板直接接触的多个保护元件。 保护元件覆盖基板的前侧，以在使用过程中保护基板免受等离子体处理环境的影响。

公开(公告)号：US08937800B2

公开(公告)日：2015-01-20

申请号：US13867515

申请日：2013-04-22

申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, Jr. ,  Samer Banna

IPC分类号： H02N13/00 ,  H01L21/67

CPC分类号： H02N13/00 ,  H01L21/67103

摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三介电层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。

公开(公告)号：US20130279066A1

公开(公告)日：2013-10-24

申请号：US13867515

申请日：2013-04-22

申请人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

发明人： Dmitry Lubomirsky ,  Jennifer Y. Sun ,  Mark Markovsky ,  Konstantin Makhratchev ,  Douglas A. Buchberger, JR. ,  Samer Banna

IPC分类号： H02N13/00

CPC分类号： H02N13/00 ,  H01L21/67103

摘要： Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.

摘要翻译： 描述了具有RF和温度均匀性的静电卡盘（ESCs）。 例如，ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方，并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方，第三电介质层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方，第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。

公开(公告)号：US08357435B2

公开(公告)日：2013-01-22

申请号：US12210982

申请日：2008-09-15

申请人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

发明人： Dmitry Lubomirsky ,  Qiwei Liang ,  Jang Gyoo Yang

IPC分类号： H05H1/24 ,  C23C16/00

CPC分类号： B08B7/00 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45514 ,  C23C16/509 ,  H01J37/32449

摘要： Methods of depositing and curing a dielectric material on a substrate are described. The methods may include the steps of providing a processing chamber partitioned into a first plasma region and a second plasma region, and delivering the substrate to the processing chamber, where the substrate occupies a portion of the second plasma region. The methods may further include forming a first plasma in the first plasma region, where the first plasma does not directly contact with the substrate, and depositing the dielectric material on the substrate to form a dielectric layer. One or more reactants excited by the first plasma are used in the deposition of the dielectric material. The methods may additional include curing the dielectric layer by forming a second plasma in the second plasma region, where one or more carbon-containing species is removed from the dielectric layer.

摘要翻译： 描述了在衬底上沉积和固化电介质材料的方法。 该方法可以包括以下步骤：提供分隔成第一等离子体区域和第二等离子体区域的处理室，以及将衬底输送到处理室，其中衬底占据第二等离子体区域的一部分。 所述方法可以进一步包括在第一等离子体区域中形成第一等离子体，其中第一等离子体不直接与衬底接触，并将电介质材料沉积在衬底上以形成电介质层。 在电介质材料的沉积中使用由第一等离子体激发的一种或多种反应物。 所述方法可以包括通过在第二等离子体区域中形成第二等离子体来固化介电层，其中从电介质层去除一个或多个含碳物质。

公开(公告)号：US08232176B2

公开(公告)日：2012-07-31

申请号：US11765944

申请日：2007-06-20

申请人： Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Ellie Yieh

发明人： Dmitry Lubomirsky ,  Srinivas D. Nemani ,  Ellie Yieh

IPC分类号： H01L21/762

CPC分类号： H01L21/76229

摘要： Methods to reduce film cracking in a dielectric layer are described. The methods may include the steps of depositing a first dielectric film on a substrate and removing a top portion of the first dielectric film by performing an etch on the film. The methods may also include depositing a second dielectric film over the etched first film, and removing a top portion of the second dielectric film. In addition, the methods may include annealing the first and second dielectric films to form the dielectric layer, where the removal of the top portions from the first and the second dielectric films reduces a stress level in the dielectric layer.

摘要翻译： 描述了减少电介质层中的膜破裂的方法。 所述方法可以包括以下步骤：在衬底上沉积第一电介质膜并通过对膜进行蚀刻来去除第一电介质膜的顶部。 所述方法还可以包括在蚀刻的第一膜上沉积第二电介质膜，以及去除第二电介质膜的顶部。 此外，所述方法可以包括退火第一和第二介电膜以形成电介质层，其中从第一和第二电介质膜去除顶部部分降低了介电层中的应力水平。

公开(公告)号：US20120074126A1

公开(公告)日：2012-03-29

申请号：US13072546

申请日：2011-03-25

申请人： Won B. Bang ,  Tien Fak Tan ,  Son M. Phi ,  Dmitry Lubomirsky

发明人： Won B. Bang ,  Tien Fak Tan ,  Son M. Phi ,  Dmitry Lubomirsky

IPC分类号： H05B3/68

CPC分类号： H01L21/68785 ,  H01L21/67109

摘要： A substrate support comprising a top ceramic plate providing a substrate support surface for supporting a substrate during substrate processing, a substrate pedestal having coolant channels formed therein and a thermoelectric deck sandwiched between the top ceramic plate and substrate pedestal. The thermoelectric deck includes a plurality of embedded thermoelectric elements that can either heat or cool the substrate support surface.

摘要翻译： 一种衬底支撑件，包括顶部陶瓷板，其提供用于在衬底处理期间支撑衬底的衬底支撑表面，其中形成有冷却剂通道的衬底基座和夹在顶部陶瓷板和衬底基座之间的热电板。 热电甲板包括可以加热或冷却基板支撑表面的多个嵌入式热电元件。