公开(公告)号：US08353613B2

公开(公告)日：2013-01-15

申请号：US12687290

申请日：2010-01-14

申请人： Byoung-Iyong Choi ,  Hong-seok Lee ,  Jong-min Kim ,  Eun-kyung Lee

发明人： Byoung-Iyong Choi ,  Hong-seok Lee ,  Jong-min Kim ,  Eun-kyung Lee

IPC分类号： F21V7/04 ,  H01L33/00

CPC分类号： G02B6/0035 ,  G02B6/0038

摘要： A light guide plate includes a plurality of quantum dots on at least one of a surface of the light guide plate and inside the light guide plate, wherein the plurality of quantum dots emit light having a different wavelength than a light incident thereto.

摘要翻译： 导光板在导光板的表面和导光板的至少一个上包括多个量子点，其中多个量子点发射具有与入射到其上的光不同的波长的光。

公开(公告)号：US07750353B2

公开(公告)日：2010-07-06

申请号：US11350751

申请日：2006-02-10

申请人： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-Iyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.

公开(公告)号：US08513101B2

公开(公告)日：2013-08-20

申请号：US12560768

申请日：2009-09-16

申请人： Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Byung-sung Kim

发明人： Eun-kyung Lee ,  Dong-mok Whang ,  Byoung-lyong Choi ,  Byung-sung Kim

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： H01L21/02532 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639

摘要： A method of synthesizing a nanowire. The method includes disposing a first oxide layer including germanium (Ge) on a substrate, forming a second oxide layer including a nucleus by annealing the first oxide layer, and growing a nanowire including Ge from the nucleus by a chemical vapor deposition (“CVD”) method.

摘要翻译： 一种合成纳米线的方法。 该方法包括在基板上设置包括锗（Ge）的第一氧化物层，通过退火第一氧化物层形成包括核的第二氧化物层，并通过化学气相沉积（“CVD”）从核中生长包括锗的纳米线 ） 方法。

公开(公告)号：US08330142B2

公开(公告)日：2012-12-11

申请号：US12708664

申请日：2010-02-19

申请人： Kyung-sang Cho ,  Byoung-lyong Choi ,  Eun-kyung Lee ,  Tae-ho Kim ,  Sang-jin Lee

发明人： Kyung-sang Cho ,  Byoung-lyong Choi ,  Eun-kyung Lee ,  Tae-ho Kim ,  Sang-jin Lee

IPC分类号： H01L21/02

CPC分类号： H01L51/502 ,  B82Y20/00 ,  B82Y30/00 ,  H01L33/14 ,  H01L51/0003 ,  H01L51/0007 ,  H01L51/5036 ,  H01L51/5048 ,  H01L51/5096

摘要： A quantum dot light emitting device includes; a substrate, a first electrode disposed on the substrate, a second electrode disposed substantially opposite to the first electrode, a first charge transport layer disposed between the first electrode and the second electrode, a quantum dot light emitting layer disposed between the first charge transport layer and one of the first electrode and the second electrode, and at least one quantum dot including layer disposed between the quantum dot light emitting layer and the first charge transport layer, wherein the at least one quantum dot including layer has an energy band level different from an energy band level of the quantum dot light emitting layer.

摘要翻译： 量子点发光器件包括： 衬底，设置在衬底上的第一电极，与第一电极基本相对设置的第二电极，设置在第一电极和第二电极之间的第一电荷传输层，设置在第一电荷传输层之间的量子点发光层 和第一电极和第二电极中的一个以及设置在量子点发光层和第一电荷传输层之间的至少一个量子点包括层，其中所述至少一个量子点包含层具有与 量子点发光层的能带电平。

公开(公告)号：US20090189150A1

公开(公告)日：2009-07-30

申请号：US12219273

申请日：2008-07-18

申请人： Bang-Lin Lee ,  Kook-min Han ,  Eun-kyung Lee ,  Do-hwan Kim ,  Hyun-sik Moon

发明人： Bang-Lin Lee ,  Kook-min Han ,  Eun-kyung Lee ,  Do-hwan Kim ,  Hyun-sik Moon

IPC分类号： H01L51/05 ,  C08F28/06 ,  C08F4/44 ,  C08F230/04 ,  C08F4/72

CPC分类号： C08G61/126 ,  C08G61/123 ,  H01B1/127 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

摘要： An organic semiconducting copolymer according to example embodiments may be represented by Formula 1 below: An organic electronic device may include the above organic semiconducting copolymer. The organic semiconducting copolymer according to example embodiments may provide improved solubility, processability, and thin film properties. Consequently, the organic semiconducting copolymer may be used in a variety of electronic devices. A suitable electronic device may be an organic thin film transistor. When an active layer of an organic thin film transistor includes the organic semiconducting copolymer, higher charge mobility and lower breaking leakage current may be achieved.

摘要翻译： 根据示例性实施方案的有机半导体共聚物可以由下式1表示：有机电子器件可以包括上述有机半导体共聚物。 根据示例性实施方案的有机半导体共聚物可以提供改善的溶解度，可加工性和薄膜性质。 因此，有机半导体共聚物可用于各种电子器件中。 合适的电子器件可以是有机薄膜晶体管。 当有机薄膜晶体管的有源层包括有机半导体共聚物时，可实现较高的电荷迁移率和较低的断开漏电流。

公开(公告)号：US20050074969A1

公开(公告)日：2005-04-07

申请号：US10915538

申请日：2004-08-11

申请人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

发明人： Jun-young Kim ,  Byoung-lyong Choi ,  Eun-kyung Lee

IPC分类号： H01L29/41 ,  H01L21/20 ,  H01L21/265 ,  H01L21/28 ,  H01L21/283 ,  H01L21/285 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L21/82 ,  H01L21/8238 ,  H01L23/48 ,  H01L23/52 ,  H01L27/04 ,  H01L29/08 ,  H01L29/78

CPC分类号： H01L21/823814 ,  H01L21/26533 ,  H01L21/28506 ,  H01L21/823878 ,  H01L24/05 ,  H01L29/0847 ,  H01L29/78 ,  H01L2924/13091 ,  H01L2924/00

摘要： A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.

摘要翻译： 半导体的接触结构包括衬底，与衬底的极性相反的导电掺杂层，在衬底中形成导电掺杂层，形成在导电掺杂层上的导电层和形成的绝缘掺杂层 在衬底中的导电掺杂层下面。

公开(公告)号：US5648979A

公开(公告)日：1997-07-15

申请号：US581259

申请日：1995-12-29

申请人： Jong-kuk Mun ,  Yong-hee Lee ,  Eun-kyung Lee ,  Kyung-ho Ha

发明人： Jong-kuk Mun ,  Yong-hee Lee ,  Eun-kyung Lee ,  Kyung-ho Ha

IPC分类号： H01L33/00 ,  H01S5/026 ,  H01S5/183 ,  H01S3/19 ,  H01L27/15 ,  H01S3/08

CPC分类号： H01S5/0264 ,  H01S5/1078 ,  H01S5/183

摘要： There is provided an assembly of a light source and an optical detector, each using a vertical cavity surface emitting laser (VCSEL). To control light emission of the VCSEL light source, spontaneous light emitted laterally therefrom is converted into an electrical signal. The optical detector for monitoring light is provided around the light source to supply the feedback electrical signal. The inner surface facing the light source of the optical detector is circular to absorb the spontaneous light and the outer surface thereof is polygonal having a plurality of peaks and valleys. Therefore, most of spontaneous light absorbed in the optical detector is reflected within, not penetrating the outer surface thereof, thereby extending the path of the spontaneous light in the optical detector and increasing the light intensity converted into an electrical signal.

摘要翻译： 提供了一种光源和光学检测器的组件，每个使用垂直腔表面发射激光器（VCSEL）。 为了控制VCSEL光源的发光，将其侧向发射的自发光转换成电信号。 在光源周围设置用于监视光的光检测器，以提供反馈电信号。 面向光学检测器的光源的内表面是圆形的以吸收自发光，并且其外表面是具有多个峰和谷的多边形。 因此，在光检测器中吸收的大部分自发光被反射到内部，不会穿透其外表面，从而延长光学检测器中自发光的路径，并增加转换成电信号的光强度。

公开(公告)号：US09144962B2

公开(公告)日：2015-09-29

申请号：US13094154

申请日：2011-04-26

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Choong-ho Yu

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Choong-ho Yu

IPC分类号： B32B3/00 ,  B32B37/02 ,  B32B37/24 ,  B32B9/00 ,  B32B27/06 ,  B82Y30/00 ,  H01B1/04

CPC分类号： B32B37/24 ,  B32B9/007 ,  B32B27/06 ,  B32B2037/243 ,  B32B2037/246 ,  B32B2309/02 ,  B32B2309/105 ,  B32B2457/00 ,  B82Y30/00 ,  H01B1/04 ,  Y10T156/10 ,  Y10T428/24355 ,  Y10T428/24802 ,  Y10T428/31855

摘要： A graphene-polymer layered composite and a method of manufacturing the same is provided. A graphene-polymer layered composite includes polymer layers surrounding a graphene sheet, and may include numerous polymer layers and graphene sheets in an alternating stacked configuration. The graphene-polymer layered composite has the characteristics of a polymer in that it provides flexibility, ease of manufacturing, low manufacturing costs, and low thermal conductivity. The graphene-polymer layered composite also has the characteristics of graphene in that it has a high electrical conductivity. Due to the low thermal conductivity and high electrical conductivity, the graphene-polymer layered composite may be useful for electrodes, electric devices, and thermoelectric materials.

摘要翻译： 提供了石墨烯 - 聚合物层状复合材料及其制造方法。 石墨烯 - 聚合物层状复合物包括围绕石墨烯片的聚合物层，并且可以包括交替堆叠构型的许多聚合物层和石墨烯片。 石墨烯 - 聚合物层状复合材料具有聚合物的特征，因为它提供了灵活性，易于制造，低制造成本和低热导率。 石墨烯聚合物层状复合材料也具有石墨烯的特征，因为其具有高导电性。 由于导热性低，导电性高，石墨烯 - 聚合物层状复合材料可用于电极，电子器件和热电材料。

公开(公告)号：US20070174780A1

公开(公告)日：2007-07-26

申请号：US11432817

申请日：2006-05-11

申请人： Se-hyun Park ,  Chang-beom Shin ,  Eun-kyung Lee ,  Na-ri Choi

发明人： Se-hyun Park ,  Chang-beom Shin ,  Eun-kyung Lee ,  Na-ri Choi

IPC分类号： G06F17/00

CPC分类号： G06F3/0481

摘要： Provided is a control method for a digital image processing apparatus having a movement mode in which a user moves a target object to a target position, the method including: displaying icons including an image icon of a target object and an icon indicating a target position; displaying an icon indicating a new target position in response to the detection of a target position change signal; displaying an image icon of a new target object in response to the detection of a target object change signal; and moving the target object of the image icon currently displayed to the target position indicated by the icon currently displayed in response to the detection of a movement signal.

摘要翻译： 提供一种具有移动模式的数字图像处理装置的控制方法，其中用户将目标对象移动到目标位置，该方法包括：显示包括目标对象的图像图标和指示目标位置的图标的图标; 响应于目标位置改变信号的检测显示指示新目标位置的图标; 响应于目标对象改变信号的检测显示新的目标对象的图像图标; 以及响应于检测到移动信号，将当前显示的图像图标的目标物体移动到由当前显示的图标指示的目标位置。

公开(公告)号：US20060252171A1

公开(公告)日：2006-11-09

申请号：US11350751

申请日：2006-02-10

申请人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

发明人： Eun-kyung Lee ,  Byoung-lyong Choi ,  Pil-soo Ahn ,  Jun-young Kim ,  Young-gu Jin

IPC分类号： H01L21/00 ,  A61B1/04 ,  H04N7/18

CPC分类号： H01L33/34 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  G01Q80/00 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14683 ,  H01L27/156 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/1804 ,  H01L33/0054 ,  H01L33/24 ,  Y02E10/547 ,  Y02P70/521

摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.