Abstract:
A pattern forming method contains (i) a step of forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a) a repeating unit represented by the specific formula, and (B) a compound capable of generating an organic acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film, and (iii) a step of developing the film by using an organic solvent-containing developer to form a negative pattern.
Abstract:
Provided are an actinic ray-sensitive or radiation-sensitive resin composition having excellent temporal stability and excellent LWR suppression property of a pattern to be formed; a resist film; a positive tone pattern forming method; and a method for manufacturing an electronic device, which relate to the actinic ray-sensitive or radiation-sensitive resin composition. The actinic ray-sensitive or radiation-sensitive resin composition contains a resin (A) having a repeating unit (a) and a basic compound, a pKa of a conjugate acid of which is 13.00 or less, in which the repeating unit (a) has a non-ionic group which generates an acid in a case where a leaving group is eliminated by irradiation with an actinic ray or a radiation, in which a repeating unit obtained by replacing the leaving group with a hydrogen atom has a molecular weight of 300 or less, and the repeating unit (a) is a predetermined amount with respect to a total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.
Abstract:
An actinic ray sensitive or radiation sensitive resin composition contains a polymer compound (A) having a phenolic hydroxyl group and satisfying the following (a) and (b), a compound (B) capable of generating an acid upon irradiation with actinic rays or radiation, and a crosslinking agent (C) for crosslinking the polymer compound (A) by the action of an acid and having a glass transition temperature (Tg) of 200° C. or higher: (a) the weight-average molecular weight is 3,000 or more and 6,500 or less, and (b) the glass transition temperature (Tg) is 140° C. or higher.
Abstract:
There is provided an active light sensitive or radiation sensitive resin composition which contains (A) an alkali soluble resin and (C) a cross-linking agent represented by the following General Formula (1-0).
Abstract:
There is provided a pattern forming method, including: (a) forming a film by an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin capable of increasing polarity by an action of an acid to decrease solubility in an organic solvent-containing developer, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (C) a solvent, and (D) a resin, which contains substantially no fluorine atom and silicon atom and is other than the resin (A), (b) exposing the film; and (c) performing development using the organic solvent-containing developer to form a negative type pattern, wherein a receding contact angle of water on the film formed by (a) is 70° or more.
Abstract:
A pattern forming, method, includes: (i) forming a film from an actinic ray-sensitive or radiation-sensitive resin composition that contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation and decomposing by an action of an acid to decrease a solubility of the compound (A) for an organic solvent; (ii) exposing the film; and (iii) performing development by using a developer containing an organic solvent.
Abstract:
The present invention provides an actinic ray-sensitive or radiation-sensitive resin composition including: a resin (A) that is decomposed by the action of an acid and thereby increased in polarity; and a compound (C) that generates an acid upon irradiation with actinic rays or radiation and that is represented by a specific formula. The resin (A) includes a specific repeating unit represented by specific general formula (AI).
Abstract:
Provided are an actinic ray-sensitive or radiation-sensitive resin composition with which LWR of a pattern to be formed can be reduced; a resist film; a pattern forming method; and a method for manufacturing an electronic device. The actinic ray-sensitive or radiation-sensitive resin composition of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) having a repeating unit (a), in which the repeating unit (a) is a repeating unit having an ionic group which generates an acid in a case where a leaving group is eliminated by irradiation with an actinic ray or a radiation, in which a repeating unit obtained by replacing the leaving group with a hydrogen atom has a molecular weight of 300 or less, and the repeating unit (a) is a predetermined amount or more with respect to a total solid content of the actinic ray-sensitive or radiation-sensitive resin composition.
Abstract:
Provided are an actinic ray-sensitive or radiation-sensitive resin composition including a compound (A) whose dissolution rate in an alkali developer decreases by the action of an acid, a resin (B) having a group that decomposes by the action of an alkali developer to increase the solubility in the alkali developer and having at least one of a fluorine atom or a silicon atom, and a resin (C) having a phenolic hydroxyl group, different from the resin (B), an actinic ray-sensitive or radiation-sensitive film and a mask blank, each formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method using the actinic ray-sensitive or radiation-sensitive resin composition, and a method for manufacturing an electronic device.
Abstract:
An actinic ray-sensitive or radiation-sensitive resin composition includes a resin (A) containing a repeating unit represented by General Formula (4) and a crosslinking agent (C) containing a polar group, in which the crosslinking agent (C) is a compound represented by General Formula (1) or a compound in which two to five structures represented by General Formula (1) are connected via a linking group or a single bond represented by L1 in General Formula (3).