摘要:
A bending transducer device for generating electrical energy includes at least one elastically deformable support structure, one piezoelectric element, and a bearing device. The piezoelectric element is configured and situated on the support structure in such a way that the piezoelectric element is deformable due to a deformation of the support structure caused by vibration, and the support structure is supported vibration-capably in at least one bearing of the bearing device, the bearing being configured as an articulated receptacle, e.g., a hinge.
摘要:
A concept is proposed for a MEMS microphone which may be operated at a relatively low voltage level and still have comparatively high sensitivity. The component according to the present invention includes a micromechanical microphone structure having an acoustically active diaphragm which functions as a deflectable electrode of a microphone capacitor (1), and a stationary acoustically permeable counterelement which functions as a counter electrode of the microphone capacitor (1). The component also includes means for applying a high-frequency clock signal (2) to the microphone capacitor (1) and for applying the inverted clock signal (2′) to an adjustable but acoustically inactive compensation capacitor (7), an integrating operational amplifier (3) which integrates the sum of the current flow through the microphone capacitor (1) and the current flow through the compensation capacitor (7), a demodulator (4) for the output signal of the integrating operational amplifier (3), the demodulator being synchronized with the clock signal (2), and a low-pass filter for obtaining a microphone signal which corresponds to the changes in capacitance of the microphone capacitor (1), based on the output signal of the demodulator (4).
摘要:
A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.
摘要:
A method for manufacturing a semiconductor structure is provided which includes the following operations: supplying a crystalline semiconductor substrate, providing a porous region adjacent to a surface of the semiconductor substrate, introducing a dopant into the porous region from the surface, and thermally recrystallizing the porous region into a crystalline doping region of the semiconductor substrate whose doping type and/or doping concentration and/or doping distribution are/is different from those or that of the semiconductor substrate. A corresponding semiconductor structure is likewise provided.
摘要:
An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要:
A method for producing a capping wafer for a sensor having at least one cap includes: production of a contacting via extending through the wafer, and, temporally subsequent thereto, filling of the contacting via with an electrically conductive material.
摘要:
A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.
摘要:
A layer system and a method for producing the layer system are provided, the layer system having a silicon layer, on which at least regionally a passivating layer is superficially deposited, the passivating layer having a first, at least largely inorganic partial layer and a second, at least largely polymer partial layer. The method includes producing on the silicon layer, a first, inorganic partial layer, and producing on this first partial layer a second, polymer partial layer, which form the passivating layer. The production of the intermediate layer occurs in such a way that the intermediate layer in its surface area adjoining the first partial layer is composed as the first partial layer, and the intermediate layer in its surface area adjoining the second partial layer is composed as the second partial layer. The composition of the intermediate layer transitions, either continuously or in steps, from the composition corresponding to the first partial layer into the composition corresponding to the second partial layer.
摘要:
An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450° C. is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.
摘要:
An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.