公开(公告)号：US07959738B2

公开(公告)日：2011-06-14

申请号：US11984340

申请日：2007-11-16

申请人： Dae-Hyuk Kang ,  Hyo-San Lee ,  Dong-Gyun Han ,  Chang-Ki Hong ,  Kun-Tack Lee

发明人： Dae-Hyuk Kang ,  Hyo-San Lee ,  Dong-Gyun Han ,  Chang-Ki Hong ,  Kun-Tack Lee

IPC分类号： H01L21/28

CPC分类号： H01L21/31133 ,  G03F7/422 ,  G03F7/425 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.

摘要翻译： 去除光致抗蚀剂的方法可以包括在具有包括金属的导电结构的基底上的光致抗蚀剂中渗透超临界二氧化碳。 渗透超临​​界二氧化碳的光致抗蚀剂可以容易地去除。 可以使用来自基底的光致抗蚀剂清洁溶液去除渗透超临界二氧化碳的光致抗蚀剂。 光致抗蚀剂清洁溶液可以包括约8重量％至约20重量％的链烷醇胺溶液，约25重量％至约40重量％的极性有机溶液，约0.5重量％至约 3重量％，其余为水。 可以容易地去除光致抗蚀剂，而不会在等离子体工艺中损坏导电结构。

公开(公告)号：US20080138972A1

公开(公告)日：2008-06-12

申请号：US11984340

申请日：2007-11-16

申请人： Dae-Hyuk Kang ,  Hyo-San Lee ,  Dong-Gyun Han ,  Chang-Ki Hong ,  Kun-Tack Lee

发明人： Dae-Hyuk Kang ,  Hyo-San Lee ,  Dong-Gyun Han ,  Chang-Ki Hong ,  Kun-Tack Lee

IPC分类号： H01L21/28 ,  B08B3/08

CPC分类号： H01L21/31133 ,  G03F7/422 ,  G03F7/425 ,  H01L21/28061 ,  H01L29/4941 ,  H01L29/517 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of removing a photoresist may include permeating supercritical carbon dioxide into the photoresist on a substrate having a conductive structure including a metal. The photoresist permeating the supercritical carbon dioxide may be easily removable. The photoresist permeating the supercritical carbon dioxide may be removed using a photoresist cleaning solution from the substrate. The photoresist cleaning solution may include an alkanolamine solution of about 8 percent by weight to about 20 percent by weight, a polar organic solution of about 25 percent by weight to about 40 percent by weight, a reducing agent of about 0.5 percent by weight to about 3 percent by weight with the remainder being water. The photoresist may be easily removed without damaging the conductive structure in a plasma process.

摘要翻译： 去除光致抗蚀剂的方法可以包括在具有包括金属的导电结构的基底上的光致抗蚀剂中渗透超临界二氧化碳。 渗透超临​​界二氧化碳的光致抗蚀剂可以容易地去除。 可以使用来自基底的光致抗蚀剂清洁溶液去除渗透超临界二氧化碳的光致抗蚀剂。 光致抗蚀剂清洁溶液可以包括约8重量％至约20重量％的链烷醇胺溶液，约25重量％至约40重量％的极性有机溶液，约0.5重量％至约 3重量％，其余为水。 可以容易地去除光致抗蚀剂，而不会在等离子体工艺中损坏导电结构。

公开(公告)号：US20070293054A1

公开(公告)日：2007-12-20

申请号：US11752834

申请日：2007-05-23

申请人： Hyo-San Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han

发明人： Hyo-San Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han

IPC分类号： H01L21/306 ,  H01L21/302

CPC分类号： H01L21/02101 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L27/10852 ,  Y10S134/902

摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

摘要翻译： 本文提供了使用超临界流体的蚀刻，清洁和干燥方法以及用于进行该临界流体的室系统。 蚀刻方法包括使用其中溶解蚀刻剂的超临界二氧化碳蚀刻材料层，以及使用超临界二氧化碳除去由材料层和蚀刻化学品之间的反应产生的蚀刻副产物，其中清洁化学品 溶解 还提供了制造半导体器件的方法。

公开(公告)号：US20120085495A1

公开(公告)日：2012-04-12

申请号：US13326940

申请日：2011-12-15

申请人： Hyo-San Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Tack Lim ,  Ha-Soo Hwang ,  Haldori Vuvaraj ,  Jae-Monk Jung

发明人： Hyo-San Lee ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Jeong-Nam Han ,  Jung-Min Oh ,  Kwon-Tack Lim ,  Ha-Soo Hwang ,  Haldori Vuvaraj ,  Jae-Monk Jung

IPC分类号： C23F1/08 ,  B08B3/00

CPC分类号： H01L21/02101 ,  H01L21/31111 ,  H01L21/67051 ,  H01L21/6708 ,  H01L27/10852 ,  Y10S134/902

摘要： Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved, and removing an etching by-product created from a reaction between the material layer and the etching chemical using a supercritical carbon dioxide in which a cleaning chemical is dissolved. Methods of manufacturing a semiconductor device are also provided.

公开(公告)号：US08795541B2

公开(公告)日：2014-08-05

申请号：US13314791

申请日：2011-12-08

申请人： Yong-Jhin Cho ,  Kun-Tack Lee ,  Hyo-San Lee ,  Young-Hoo Kim ,  Jung-Won Lee ,  Sang-Won Bae ,  Jung-Min Oh

发明人： Yong-Jhin Cho ,  Kun-Tack Lee ,  Hyo-San Lee ,  Young-Hoo Kim ,  Jung-Won Lee ,  Sang-Won Bae ,  Jung-Min Oh

IPC分类号： H01L21/66 ,  H01L21/02

CPC分类号： H01L21/67023 ,  B08B7/0021 ,  H01L21/0206 ,  H01L21/02104 ,  H01L21/31111 ,  H01L22/00 ,  H01L22/26 ,  H01L27/10852 ,  H01L28/90

摘要： In a supercritical fluid method a supercritical fluid is supplied into a process chamber. The supercritical fluid is discharged from the process chamber as a supercritical fluid process proceeds. A concentration of a target material included in the supercritical fluid discharged from the process chamber is detected during the supercritical fluid process. An end point of the supercritical fluid process may be determined based on a detected concentration of the target material.

摘要翻译： 在超临界流体法中，将超临界流体供应到处理室中。 当超临界流体处理进行时，超临界流体从处理室排出。 在超临界流体处理中检测从处理室排出的超临界流体中包含的目标材料的浓度。 超临界流体处理的终点可以基于检测到的目标材料的浓度来确定。

公开(公告)号：US20150162221A1

公开(公告)日：2015-06-11

申请号：US14580513

申请日：2014-12-23

申请人： Hyo-San Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

发明人： Hyo-San Lee ,  Chang-ki Hong ,  Kun-tack Lee ,  Jeong-nam Han

IPC分类号： H01L21/67 ,  H01J37/32

CPC分类号： H01L21/67017 ,  H01J37/32449 ,  H01J37/32467 ,  H01J37/32715 ,  H01J37/32743 ,  H01J37/32816 ,  H01J2237/334 ,  H01J2237/335 ,  H01L21/67028 ,  H01L21/67069 ,  H01L21/67276 ,  Y10T137/2931 ,  Y10T137/4673

摘要： Provided are an apparatus and method for treating wafers using a supercritical fluid. The wafer treatment apparatus includes a plurality of chambers; a first supply supplying a first fluid in a supercritical state; a second supply supplying a mixture of the first fluid and a second fluid; a plurality of first and second valves; and a controller selecting a first chamber of the plurality of chambers for wafer treatment to control the open/closed state of each of the plurality of first valves so that the first fluid can be supplied only to the first chamber of the plurality of chambers and selecting a second chamber of the plurality of chambers to control the open/closed state of each of the plurality of second valves so that the mixture of the first fluid and a second fluid can be supplied only to the second chamber of the plurality of chambers. The wafer treatment method involves performing a predetermined treatment such as etching, cleaning or drying on wafers within only one of the plurality of chambers, followed by wafer treatment on the succeeding chamber, and thus allowing for sequential wafer treatment within each of the plurality of chambers.

摘要翻译： 提供了一种使用超临界流体处理晶片的设备和方法。 晶片处理装置包括多个室; 供应超临界状态的第一流体的第一供应源; 供应第一流体和第二流体的混合物的第二供应源; 多个第一和第二阀; 以及控制器，选择用于晶片处理的多个室的第一室，以控制多个第一阀中的每一个的打开/关闭状态，使得第一流体仅能够供应到多个室的第一室，并且选择 多个室中的第二室，用于控制多个第二阀中的每一个的打开/关闭状态，使得第一流体和第二流体的混合物只能供应到多个室的第二室。 晶片处理方法包括对多个室内的仅一个中的晶片进行蚀刻，清洗或干燥等预定处理，然后在后续室进行晶片处理，从而允许在多个室内进行顺序晶片处理 。

公开(公告)号：US20100035436A1

公开(公告)日：2010-02-11

申请号：US12461319

申请日：2009-08-07

申请人： Go-Un Kim ,  Hyo-San Lee ,  Myung-Kook Park ,  Ho-Seok Yang ,  Jeong-Nam Han ,  Chang-Ki Hong

发明人： Go-Un Kim ,  Hyo-San Lee ,  Myung-Kook Park ,  Ho-Seok Yang ,  Jeong-Nam Han ,  Chang-Ki Hong

IPC分类号： H01L21/306 ,  C09K13/08

CPC分类号： C09K13/08 ,  H01L21/31111

摘要： A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.

摘要翻译： 用于蚀刻氧化硅层的组合物，蚀刻半导体器件的方法以及用于蚀刻包括氧化硅层和包含氟化氢，阴离子聚合物和去离子水的氮化物层的半导体器件的组合物，其中所述阴离子聚合物 以用于蚀刻氧化硅层的组合物的总重量为约0.001至约2重量％的量包含，并且氧化硅层相对于氮化物层的蚀刻选择性为约80或更大。

公开(公告)号：US20060097220A1

公开(公告)日：2006-05-11

申请号：US11270339

申请日：2005-11-09

申请人： Mi-Young Kim ,  Hyo-San Lee ,  Uk-Sun Hong ,  Jun-Hwan Oh ,  Sang-Min Lee

发明人： Mi-Young Kim ,  Hyo-San Lee ,  Uk-Sun Hong ,  Jun-Hwan Oh ,  Sang-Min Lee

IPC分类号： C09K13/00 ,  B44C1/22 ,  H01L21/461

CPC分类号： C09K13/08 ,  H01L21/31111

摘要： Etching solutions are disclosed for etching low-k dielectric layers on substrates, said solutions including effective proportions of an oxidant for oxidizing a low-k dielectric layer and effective proportions of an oxide etchant for removing oxides. It is possible to easily remove a low-k dielectric layer using such etching solutions by a single-stage treatment process.

摘要翻译： 公开了蚀刻溶液以蚀刻在衬底上的低k电介质层，所述溶液包括用于氧化低k电介质层的氧化剂的有效比例和用于除去氧化物的氧化物蚀刻剂的有效比例。 可以通过单级处理方法使用这种蚀刻溶液容易地去除低k电介质层。

公开(公告)号：US08518772B2

公开(公告)日：2013-08-27

申请号：US13117478

申请日：2011-05-27

申请人： Keun-Hee Bai ,  Hyo-San Lee ,  Dong-Seok Lee

发明人： Keun-Hee Bai ,  Hyo-San Lee ,  Dong-Seok Lee

IPC分类号： H01L21/8242

CPC分类号： H01L27/10817 ,  H01L21/31111 ,  H01L21/31116 ,  H01L28/91

摘要： A fabricating method of a semiconductor device includes forming an interlayer insulation layer on a substrate, the interlayer insulation layer including a storage node contact plug, forming an etch stop layer on the interlayer insulation layer, the etch stop layer including a silicon layer or a silicon germanium layer, forming a molding insulation layer on the etch stop layer, forming a hole in the molding insulation layer by selectively etching the molding insulation layer until a portion of the etch stop layer is exposed, forming a first conductive layer conformally on an inner surface of the hole and on a top surface of the molding insulation layer, and forming a metal silicide pattern in a predetermined area of the etch stop layer exposed by the molding insulation layer by annealing the first conductive layer and the etch stop layer.

摘要翻译： 半导体器件的制造方法包括在衬底上形成层间绝缘层，所述层间绝缘层包括存储节点接触插塞，在所述层间绝缘层上形成蚀刻停止层，所述蚀刻停止层包括硅层或硅 锗层，在所述蚀刻停止层上形成模制绝缘层，通过选择性地蚀刻所述模制绝缘层直到所述蚀刻停止层的一部分露出来在所述模制绝缘层中形成孔，在所述蚀刻停止层上形成第一导电层， 并且在模制绝缘层的顶表面上，并且通过退火第一导电层和蚀刻停止层，在由模制绝缘层暴露的蚀刻停止层的预定区域中形成金属硅化物图案。

公开(公告)号：US08685272B2

公开(公告)日：2014-04-01

申请号：US12461319

申请日：2009-08-07

申请人： Go-Un Kim ,  Hyo-San Lee ,  Myung-Kook Park ,  Ho-Seok Yang ,  Jeong-Nam Han ,  Chang-Ki Hong

发明人： Go-Un Kim ,  Hyo-San Lee ,  Myung-Kook Park ,  Ho-Seok Yang ,  Jeong-Nam Han ,  Chang-Ki Hong

IPC分类号： C09K13/08 ,  C09K13/00 ,  H01L21/302

CPC分类号： C09K13/08 ,  H01L21/31111

摘要： A composition for etching a silicon oxide layer, a method of etching a semiconductor device, and a composition for etching a semiconductor device including a silicon oxide layer and a nitride layer including hydrogen fluoride, an anionic polymer, and deionized water, wherein the anionic polymer is included in an amount of about 0.001 to about 2 wt % based on the total weight of the composition for etching a silicon oxide layer, and an etch selectivity of the silicon oxide layer with respect to a nitride layer is about 80 or greater.

摘要翻译： 用于蚀刻氧化硅层的组合物，蚀刻半导体器件的方法以及用于蚀刻包括氧化硅层和包含氟化氢，阴离子聚合物和去离子水的氮化物层的半导体器件的组合物，其中所述阴离子聚合物 以用于蚀刻氧化硅层的组合物的总重量为约0.001至约2重量％的量包含，并且氧化硅层相对于氮化物层的蚀刻选择性为约80或更大。