公开(公告)号：US20190221345A1

公开(公告)日：2019-07-18

申请号：US15870302

申请日：2018-01-12

Applicant: Intel Corporation

Inventor： Sai Vadlamani ,  Prithwish Chatterjee ,  Rahul Jain ,  Kyu Oh Lee ,  Sheng C. Li ,  Andrew J. Brown ,  Lauren A. Link

IPC: H01F1/42 ,  H01L21/56 ,  H01F27/38 ,  B32B27/38 ,  C22C45/04 ,  H01F27/28

CPC classification number: H01F1/42 ,  B32B27/38 ,  C22C45/04 ,  H01F27/2804 ,  H01F27/38 ,  H01L21/56

Abstract: A substrate for an integrated circuit package, the substrate comprising a dielectric, at least one conductor plane within the dielectric, and a planar magnetic structure comprising an organic magnetic laminate embedded within the dielectric, wherein the planar magnetic structure is integrated within the at least one conductor plane.

公开(公告)号：US11824013B2

公开(公告)日：2023-11-21

申请号：US16541734

申请日：2019-08-15

Applicant: INTEL CORPORATION

Inventor： Lauren A. Link ,  Andrew J. Brown ,  Sheng C. Li ,  Sandeep B. Sane

IPC: H01L23/00 ,  H01L23/498 ,  H01L23/14 ,  H01L23/15

CPC classification number: H01L23/562 ,  H01L23/145 ,  H01L23/15 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/16 ,  H01L2224/16227 ,  H01L2924/351

Abstract: Techniques for mounting a semiconductor chip in a circuit board assembly includes using different buildup materials on opposite sides of a core to optimize stress in the first level interconnect structure (between the chip and core) and/or the second level interconnect structure (between the core and circuit board). The core can be, for example, ceramic, glass, or glass cloth-reinforced epoxy. In one example, the first side of the core has one or more layers of conductive material within a first buildup structure comprising a first buildup material. The second side of the substrate has one or more layers of conductive material within a second buildup structure comprising a second buildup material different from the first buildup material. In another example, an outermost layer of the second buildup structure is a ductile material that functions to decouple stress in the interconnect between the substrate and a circuit board.

公开(公告)号：US11676891B2

公开(公告)日：2023-06-13

申请号：US17364686

申请日：2021-06-30

Applicant: Intel Corporation

Inventor： Hongxia Feng ,  Dingying David Xu ,  Sheng C. Li ,  Matthew L. Tingey ,  Meizi Jiao ,  Chung Kwang Christopher Tan

IPC: H01L23/498 ,  H01L23/13 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01L23/49838 ,  H01L21/486 ,  H01L21/4857 ,  H01L23/13 ,  H01L23/49822 ,  H01L23/49866 ,  H01L23/5385 ,  H01L23/49816 ,  H01L23/5383 ,  H01L2224/16225 ,  H01L2924/15311

Abstract: A package substrate and package assembly including a package substrate including a substrate body including electrical routing features therein and a surface layer and a plurality of first and second contact points on the surface layer including a first pitch and a second pitch, respectively, wherein the plurality of first contact points and the plurality of second contact points are continuous posts to the respective ones of the electrical routing features. A method including forming first conductive vias in a package assembly, wherein the first conductive vias include substrate conductive vias to electrical routing features in a package substrate and bridge conductive vias to bridge surface routing features of a bridge substrate; forming a first surface layer and a second surface layer on the package substrate; and forming second conductive vias through each of the first surface layer and the second surface layer to the bridge conductive vias.

公开(公告)号：US11581271B2

公开(公告)日：2023-02-14

申请号：US16353164

申请日：2019-03-14

Applicant: Intel Corporation

Inventor： Rahul Jain ,  Kyu-Oh Lee ,  Islam A. Salama ,  Amruthavalli P. Alur ,  Wei-Lun K. Jen ,  Yongki Min ,  Sheng C. Li

IPC: H01L23/64 ,  H01L23/498 ,  H01L49/02 ,  H01L23/538

Abstract: Embodiments include semiconductor packages. A semiconductor package includes a plurality of build-up layers and a plurality of conductive layers in the build-up layers. The conductive layers include a first conductive layer and a second conductive layer. The first conductive layer is over the second conductive layer and build-up layers, where a first via couples the first and second conductive layers. The semiconductor package also includes a thin film capacitor (TFC) in the build-up layers, where a second via couples the TFC to the first conductive layer, and the second via has a thickness less than a thickness of the first via. The first conductive layer may be first level interconnects. The build-up layers may be dielectrics. The TFC may include a first electrode, a second electrode, and a dielectric. The first electrode may be over the second electrode, and the dielectric may be between the first and second electrodes.

公开(公告)号：US20230022714A1

公开(公告)日：2023-01-26

申请号：US17956769

申请日：2022-09-29

Applicant: Intel Corporation

Inventor： Hongxia Feng ,  Dungying David Xu ,  Sheng C. Li ,  Matthew L. Tingey ,  Meizi Jiao ,  Chung Kwang Christopher Tan

IPC: H01L23/498 ,  H01L23/13 ,  H01L21/48 ,  H01L23/538

Abstract: A package substrate and package assembly including a package substrate including a substrate body including electrical routing features therein and a surface layer and a plurality of first and second contact points on the surface layer including a first pitch and a second pitch, respectively, wherein the plurality of first contact points and the plurality of second contact points are continuous posts to the respective ones of the electrical routing features. A method including forming first conductive vias in a package assembly, wherein the first conductive vias include substrate conductive vias to electrical routing features in a package substrate and bridge conductive vias to bridge surface routing features of a bridge substrate; forming a first surface layer and a second surface layer on the package substrate; and forming second conductive vias through each of the first surface layer and the second surface layer to the bridge conductive vias.

公开(公告)号：US20210273036A1

公开(公告)日：2021-09-02

申请号：US16804317

申请日：2020-02-28

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Tarek Ibrahim ,  Prithwish Chatterjee ,  Haifa Hariri ,  Yikang Deng ,  Sheng C. Li ,  Srinivas Pietambaram

IPC: H01L49/02 ,  H05K1/18 ,  H01L23/00 ,  H01L23/498 ,  H01L21/48

Abstract: An integrated circuit (IC) package substrate, comprising a magnetic material embedded within a dielectric material. A first surface of the dielectric material is below the magnetic material, and a second surface of the dielectric material, opposite the first surface, is over the magnetic material. A metallization level comprising a first metal feature is embedded within the magnetic material. A second metal feature is at an interface of the magnetic material and the dielectric material. The second metal feature has a first sidewall in contact with the dielectric material and a second sidewall in contact with the magnetic material.

公开(公告)号：US20190206780A1

公开(公告)日：2019-07-04

申请号：US15857238

申请日：2017-12-28

Applicant: Intel Corporation

Inventor： Prithwish Chatterjee ,  Junnan Zhao ,  Sai Vadlamani ,  Ying Wang ,  Rahul Jain ,  Andrew J. Brown ,  Lauren A. Link ,  Cheng Xu ,  Sheng C. Li

IPC: H01L23/498 ,  H01F27/28 ,  H01L21/48 ,  H01F41/04 ,  H01L25/16

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49816

Abstract: Methods/structures of forming in-package inductor structures are described. Embodiments include a substrate including a dielectric material, the substrate having a first side and a second side. A conductive trace is located within the dielectric material. A first layer is on a first side of the conductive trace, wherein the first layer comprises an electroplated magnetic material, and wherein a sidewall of the first layer is adjacent the dielectric material. A second layer is on a second side of the conductive trace, wherein the second layer comprises the electroplated magnetic material, and wherein a sidewall of the second layer is adjacent the dielectric material.

公开(公告)号：US20190198436A1

公开(公告)日：2019-06-27

申请号：US15855453

申请日：2017-12-27

Applicant: Intel Corporation

Inventor： Sai Vadlamani ,  Prithwish Chatterjee ,  Robert A. May ,  Rahul S. Jain ,  Lauren A. Link ,  Andrew J. Brown ,  Kyu Oh Lee ,  Sheng C. Li

IPC: H01L23/498 ,  H01L21/48 ,  H01F27/28 ,  H01F41/04 ,  H01F27/40

CPC classification number: H01L23/49838 ,  H01F27/2804 ,  H01F27/40 ,  H01F41/043 ,  H01F2027/2809 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/486 ,  H01L23/49811 ,  H01L23/49822 ,  H01L23/49866 ,  H01L24/16 ,  H01L2224/16157 ,  H01L2924/19042 ,  H01L2924/19102

Abstract: Methods/structures of forming embedded inductor structures are described. Embodiments include forming a first interconnect structure on a dielectric material of a substrate, selectively forming a magnetic material on a surface of the first interconnect structure, forming an opening in the magnetic material, and forming a second interconnect structure in the opening. Build up layers are then formed on the magnetic material.