METHOD OF FORMING A PROTECTIVE COATING FOR A PACKAGED SEMICONDUCTOR DEVICE
    11.
    发明申请
    METHOD OF FORMING A PROTECTIVE COATING FOR A PACKAGED SEMICONDUCTOR DEVICE 有权
    形成包装半导体器件的保护涂层的方法

    公开(公告)号:US20170057815A1

    公开(公告)日:2017-03-02

    申请号:US14833871

    申请日:2015-08-24

    Abstract: A first semiconductor substrate having at least one integrated semiconductor device is provided. A lift-off layer is formed on a main surface of the first semiconductor substrate. The lift-off layer is patterned so as to form openings in the lift-off layer that are arranged on either side of a first portion of the lift-off layer. The first substrate is connected together with a second substrate by an interconnect structure to form an assembly with the main surface of the first semiconductor substrate being exposed. Exposed surfaces of the assembly are coated with a parylene coating, with a first portion of the parylene coating being supported by the first portion of the lift-off layer. The first portion of the parylene coating is selectively removed using a lift-off technique that removes the first portion of the lift-off layer. The lift-off technique is performed after connecting the first substrate and second substrates together.

    Abstract translation: 提供具有至少一个集成半导体器件的第一半导体衬底。 在第一半导体衬底的主表面上形成剥离层。 剥离层被图案化以在剥离层中形成布置在剥离层的第一部分的任一侧上的开口。 第一衬底通过互连结构与第二衬底连接在一起,以形成暴露第一半导体衬底的主表面的组件。 组件的暴露表面涂覆有聚对二甲苯涂层,聚对二甲苯涂层的第一部分由剥离层的第一部分支撑。 使用去除剥离层的第一部分的剥离技术选择性地除去聚对二甲苯涂层的第一部分。 在将第一基板和第二基板连接在一起之后进行剥离技术。

    Apparatus having a back-bias magnet and a semiconductor chip element
    12.
    发明授权
    Apparatus having a back-bias magnet and a semiconductor chip element 有权
    具有背偏磁体和半导体芯片元件的装置

    公开(公告)号:US09164156B2

    公开(公告)日:2015-10-20

    申请号:US13629659

    申请日:2012-09-28

    CPC classification number: G01R33/072 G01D5/147 G01R33/06 G01R33/091

    Abstract: An apparatus may include a back-bias magnet; and a semiconductor chip element; wherein the semiconductor chip element has a sensor for measuring a magnetic field strength; and wherein a contact surface is formed on a contact side of the back-bias magnet and on a contact side of the semiconductor chip element and wherein the contact side of the semiconductor chip element has one or more structures such that the contact surface of the back-bias magnet is shaped in a manner corresponding to the structures of the semiconductor chip element.

    Abstract translation: 设备可以包括背偏磁体; 和半导体芯片元件; 其中所述半导体芯片元件具有用于测量磁场强度的传感器; 并且其中在所述背偏压磁体的接触侧和所述半导体芯片元件的接触侧上形成接触表面,并且其中所述半导体芯片元件的接触侧具有一个或多个结构,使得所述背面的接触表面 -bias磁体以对应于半导体芯片元件的结构的方式成形。

    Ultrasonic touch sensor
    16.
    发明授权

    公开(公告)号:US12135853B2

    公开(公告)日:2024-11-05

    申请号:US17823372

    申请日:2022-08-30

    Abstract: What is proposed is an ultrasonic touch sensor having a contact surface for attaching the ultrasonic touch sensor to a casing, having a first ultrasonic transducer element, having a first semiconductor chip, wherein the first semiconductor chip comprises the first ultrasonic transducer element, wherein the first semiconductor chip is potted into a potting compound in such a way that a first cutout is formed from the first ultrasonic transducer element to the contact surface of the ultrasonic touch sensor, and wherein the potting compound forms the housing of the ultrasonic touch sensor.

    PACKAGE WITH SELECTIVE CORROSION PROTECTION OF ELECTRIC CONNECTION STRUCTURE

    公开(公告)号:US20210028125A1

    公开(公告)日:2021-01-28

    申请号:US16935459

    申请日:2020-07-22

    Abstract: A package is disclosed. In one example, the package comprises a carrier, an electronic component mounted on the carrier, and an encapsulant encapsulating at least part of the electronic component and only part of the carrier so that another exposed part of the carrier is exposed with regard to the encapsulant. The exposed part of the carrier comprises an electric connection structure and a corrosion protection structure. One of the electric connection structure and the corrosion protection structure is selectively formed on only a sub-portion of the other one of the electric connection structure and the corrosion protection structure outside of the encapsulant.

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