公开(公告)号：US07180180B2

公开(公告)日：2007-02-20

申请号：US10814083

申请日：2004-03-30

申请人： Grant M. Kloster ,  Michael D. Goodner ,  Shriram Ramanathan ,  Patrick Morrow

发明人： Grant M. Kloster ,  Michael D. Goodner ,  Shriram Ramanathan ,  Patrick Morrow

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L25/50 ,  H01L25/0657 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2224/05647 ,  H01L2924/00014

摘要： Numerous embodiments of a stacked device underfill and a method of formation are disclosed. In one embodiment, a method of forming stacked semiconductor device with an underfill comprises forming one or more layers of compliant material on at least a portion of the top surface of a substrate, said substrate, curing at least a portion of the semiconductor device, selectively removing a portion of the one or more layers of compliant material, and assembling the substrate into a stacked semiconductor device.

摘要翻译： 公开了堆叠装置底部填充物的多种实施方案和形成方法。 在一个实施例中，形成具有底部填充物的堆叠半导体器件的方法包括在衬底的顶表面的至少一部分上形成一层或多层顺应性材料，所述衬底，固化半导体器件的至少一部分，选择性地 去除所述柔性材料的一个或多个层的一部分，以及将所述衬底组装成堆叠的半导体器件。

公开(公告)号：US07029723B2

公开(公告)日：2006-04-18

申请号：US10337524

申请日：2003-01-07

申请人： Tian-An Chen ,  Robert Meagley ,  Kevin P. O'Brien ,  Michael D. Goodner ,  James Powers

发明人： Tian-An Chen ,  Robert Meagley ,  Kevin P. O'Brien ,  Michael D. Goodner ,  James Powers

IPC分类号： C23C16/38 ,  C23C16/28

CPC分类号： H01L21/02126 ,  C23C16/30 ,  H01L21/02203 ,  H01L21/02205 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/312 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/30 ,  H01L2924/00

摘要： Carborane may be used as a precursor to form low dielectric constant dielectrics. The carborane material may be modified to enable it to be deposited by chemical vapor deposition.

摘要翻译： 碳硼烷可用作前体以形成低介电常数电介质。 可以修饰碳硼烷材料以使其能够通过化学气相沉积沉积。

公开(公告)号：US06946384B2

公开(公告)日：2005-09-20

申请号：US10455934

申请日：2003-06-06

申请人： Grant M. Kloster ,  Michael D. Goodner ,  Shriram Ramanathan ,  Patrick Morrow

发明人： Grant M. Kloster ,  Michael D. Goodner ,  Shriram Ramanathan ,  Patrick Morrow

IPC分类号： H01L21/98 ,  H01L25/065 ,  H01L21/4763 ,  H01L21/302

CPC分类号： H01L25/50 ,  H01L25/0657 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2224/05647 ,  H01L2924/00014

摘要： Numerous embodiments of a stacked device underfill and a method of formation are disclosed. In one embodiment, a method of forming stacked semiconductor device with an underfill comprises forming one or more layers of compliant material on at least a portion of the top surface of a substrate, said substrate, curing at least a portion of the semiconductor device, selectively removing a portion of the one or more layer of complaint material, and assembling the substrate into a stacked semiconductor device.

摘要翻译： 公开了堆叠装置底部填充物的多种实施方案和形成方法。 在一个实施例中，形成具有底部填充物的堆叠半导体器件的方法包括在衬底的顶表面的至少一部分上形成一层或多层顺应性材料，所述衬底，固化半导体器件的至少一部分，选择性地 去除所述一个或多个投诉材料层的一部分，以及将所述基板组装成堆叠的半导体器件。

公开(公告)号：US06737365B1

公开(公告)日：2004-05-18

申请号：US10395447

申请日：2003-03-24

申请人： Grant M. Kloster ,  Kevin P. O'Brien ,  Justin K. Brask ,  Michael D. Goodner ,  Donald Bruner

发明人： Grant M. Kloster ,  Kevin P. O'Brien ,  Justin K. Brask ,  Michael D. Goodner ,  Donald Bruner

IPC分类号： H01L2131

CPC分类号： H01L21/02126 ,  H01L21/02203 ,  H01L21/02304 ,  H01L21/02351 ,  H01L21/31695 ,  H01L21/7682

摘要： A dielectric layer is made porous by treating the dielectric material after metal interconnects are formed in or through that layer. The porosity lowers the dielectric constant of the dielectric material. The dielectric material may be subjected to an electron beam or a sonication bath to create the pores. The structure has smooth sidewalls for metal interconnects extending through the dielectric layer.

公开(公告)号：US08992806B2

公开(公告)日：2015-03-31

申请号：US13217706

申请日：2011-08-25

申请人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

发明人： Bo Li ,  Joseph Kennedy ,  Nancy Iwamoto ,  Mark A. Fradkin ,  Makarem A. Hussein ,  Michael D. Goodner ,  Victor Lu ,  Roger Leung

IPC分类号： C09K3/00 ,  G03F7/11 ,  C09D183/04 ,  G03F7/075 ,  C09D183/08 ,  G03F7/09

CPC分类号： C09D183/04 ,  C09D183/08 ,  G03F7/0751 ,  G03F7/0752 ,  G03F7/091

摘要： An absorbing composition is described herein that includes at least one inorganic-based compound, at least one absorbing compound, and at least one material modification agent. In addition, methods of making an absorbing composition are also described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) allowing the reaction mixture to form the absorbing composition at room temperature. Another method of making an absorbing composition includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, an acid/water mixture, and one or more solvents to form a reaction mixture; and b) heating the reaction mixture to form the absorbing composition. Yet another method of making an absorbing composition is described that includes: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) heating the reaction mixture to form an absorbing material, a coating or a film. In other methods of making an absorbing composition described herein, those methods include: a) combining at least one inorganic-based compound, at least one absorbing compound, at least one material modification agent, and one or more solvents to form a reaction mixture, wherein the at least one material modification agent comprises at least one acid and water; and b) allowing the reaction mixture to form an absorbing material, a coating or a film.

摘要翻译： 本文描述的吸收组合物包括至少一种无机基化合物，至少一种吸收化合物和至少一种材料改性剂。 此外，还描述了制备吸收组合物的方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂 形成反应混合物; 和b）使反应混合物在室温下形成吸收组合物。 制备吸收组合物的另一种方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂，酸/水混合物和一种或多种溶剂组合以形成反应混合物; 和b）加热反应混合物以形成吸收组合物。 描述了制备吸收组合物的另一种方法，其包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物，其中 至少一种材料改性剂包含至少一种酸和水; 和b）加热反应混合物以形成吸收材料，涂层或膜。 在制备本文所述的吸收组合物的其它方法中，这些方法包括：a）将至少一种无机基化合物，至少一种吸收化合物，至少一种材料改性剂和一种或多种溶剂组合以形成反应混合物， 其中所述至少一种材料改性剂包含至少一种酸和水; 和b）使反应混合物形成吸收材料，涂层或膜。

公开(公告)号：US07790630B2

公开(公告)日：2010-09-07

申请号：US11105036

申请日：2005-04-12

申请人： Michael D. Goodner ,  George A. Antonelli

发明人： Michael D. Goodner ,  George A. Antonelli

IPC分类号： H01L21/469

CPC分类号： H01L21/02167 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02345 ,  H01L21/02351 ,  H01L21/3121 ,  H01L21/3148 ,  H01L21/76801 ,  H01L21/76808

摘要： A silicone-doped carbon interlayer dielectric (ILD) and its method of formation are disclosed. The ILD's dielectric constant and/or its mechanical strength can be tailored by varying the ratio of carbon-to-silicon in the silicon-doped carbon matrix.

摘要翻译： 公开了硅氧烷掺杂碳层间电介质（ILD）及其形成方法。 ILD的介电常数和/或其机械强度可以通过改变硅掺杂碳基体中碳 - 硅的比例来定制。

公开(公告)号：US20090133908A1

公开(公告)日：2009-05-28

申请号：US11946599

申请日：2007-11-28

申请人： Michael D. Goodner ,  Kevin J. Lee

发明人： Michael D. Goodner ,  Kevin J. Lee

IPC分类号： H05K1/03 ,  H01R43/00

CPC分类号： H05K3/243 ,  H01L21/563 ,  H01L24/13 ,  H01L2224/05023 ,  H01L2224/051 ,  H01L2224/05573 ,  H01L2224/13017 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/14 ,  H05K3/108 ,  H05K3/4007 ,  H05K2201/0367 ,  H05K2201/09845 ,  H05K2203/0577 ,  H05K2203/1184 ,  Y10T29/49224 ,  H01L2224/05599

摘要： An interconnect structure for a microelectronic device includes an electrically conductive material (130, 730, 930) adjacent to a metallization layer (120, 320, 920). The electrically conductive material has a base (131, 931) and a body (132, 932). The base is wider than the body. The base and the body form a single monolithic structure having no internal interface. The interconnect structure may be manufactured by providing a substrate (110, 310, 910) to which the metallization layer is applied, forming a sacrificial layer (410) adjacent to the metallization layer and a resist layer (510) adjacent to the sacrificial layer, patterning the resist layer to form an opening (610) (thereby removing a portion of the sacrificial layer), placing the electrically conductive material in the opening, and removing the resist layer, the sacrificial layer, and a portion of the metallization layer.

摘要翻译： 用于微电子器件的互连结构包括邻近金属化层（120,320,920）的导电材料（130,730,930）。 导电材料具有基底（131,931）和主体（132,932）。 基部比身体宽。 基部和主体形成一个没有内部界面的单个单一结构。 可以通过提供施加金属化层的衬底（110,310,910）来制造互连结构，形成邻近金属化层的牺牲层（410）和与牺牲层相邻的抗蚀剂层（510） 图案化抗蚀剂层以形成开口（610）（从而去除牺牲层的一部分），将导电材料放置在开口中，以及去除抗蚀剂层，牺牲层和金属化层的一部分。

公开(公告)号：US07294568B2

公开(公告)日：2007-11-13

申请号：US10922617

申请日：2004-08-20

申请人： Michael D. Goodner ,  Kevin P. O'Brien ,  Grant M. Kloster

发明人： Michael D. Goodner ,  Kevin P. O'Brien ,  Grant M. Kloster

IPC分类号： H01L21/4763 ,  H01L21/764

CPC分类号： H01L21/76807 ,  H01L21/7682

摘要： A method of forming air gaps in the interconnect structure of an integrated circuit device. The air gaps may be formed by depositing sacrificial layer over a dielectric layer and then depositing a permeable hard mask over the sacrificial layer. The sacrificial layer is subsequently removed to form air gaps. The permeable hard mask may have a thickness of less than approximately 250 nm, and internal stresses within the permeable hard mask may be controlled to prevent deformation of this layer. Other embodiments are described and claimed.

摘要翻译： 一种在集成电路器件的互连结构中形成气隙的方法。 气隙可以通过在介电层上沉积牺牲层然后在牺牲层上沉积可渗透的硬掩模来形成。 随后去除牺牲层以形成气隙。 可渗透的硬掩模可以具有小于约250nm的厚度，并且可以控制可渗透硬掩模内的内应力以防止该层的变形。 描述和要求保护其他实施例。

公开(公告)号：US07169715B2

公开(公告)日：2007-01-30

申请号：US10394104

申请日：2003-03-21

申请人： Andrew W. Ott ,  Grant M. Kloster ,  Robert P. Meagley ,  Michael D. Goodner

发明人： Andrew W. Ott ,  Grant M. Kloster ,  Robert P. Meagley ,  Michael D. Goodner

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/7682 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/31695

摘要： In one embodiment, the present invention includes introducing a conventional precursor and an organic precursor having an organic porogen into a vapor deposition apparatus; and forming a dielectric layer having the organic porogen on a substrate within the vapor deposition apparatus from the precursors. In certain embodiments, at least a portion of the organic porogen may be removed after subsequent processing, such as dual damascene processing.

摘要翻译： 在一个实施方案中，本发明包括将常规前体和具有有机致孔剂的有机前体引入蒸镀装置中; 以及在所述前体中在所述蒸镀装置内的基板上形成具有所述有机致孔剂的介电层。 在某些实施方案中，有机致孔剂的至少一部分可以在后续加工之后被除去，例如双镶嵌加工。

公开(公告)号：US07138158B2

公开(公告)日：2006-11-21

申请号：US10377061

申请日：2003-02-28

申请人： Robert P. Meagley ,  Michael D. Goodner ,  Andrew W. Ott ,  Grant M. Kloster ,  Michael L. McSwiney ,  Bob E. Leet

发明人： Robert P. Meagley ,  Michael D. Goodner ,  Andrew W. Ott ,  Grant M. Kloster ,  Michael L. McSwiney ,  Bob E. Leet

IPC分类号： B05D3/10 ,  C23C16/00

CPC分类号： H01L21/02126 ,  C23C16/401 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31633

摘要： In one embodiment, the present invention includes introducing a precursor containing hydrocarbon substituents and optionally a second conventional or hydrocarbon-containing precursor into a vapor deposition apparatus; and forming a dielectric layer having the hydrocarbon substituents on a substrate within the vapor deposition apparatus from the precursor(s). In certain embodiments, at least a portion of the hydrocarbon substituents may be later removed from the dielectric layer to reduce density thereof.

摘要翻译： 在一个实施方案中，本发明包括将含有烃取代基的前体和任选的第二常规或含烃前体引入气相沉积设备中; 以及在所述气相沉积设备内的所述前体上形成具有所述烃取代基的介电层。 在某些实施方案中，至少一部分烃取代基可以稍后从介电层去除以降低其密度。