公开(公告)号：US20110203940A1

公开(公告)日：2011-08-25

申请号：US13098572

申请日：2011-05-02

申请人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

发明人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

IPC分类号： C25F3/02 ,  C25B9/00

CPC分类号： H01L21/67086 ,  B82Y30/00 ,  C23F1/02 ,  C23F1/10 ,  H01B1/122 ,  H01L21/32115 ,  H01L21/67075

摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属，而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层（例如阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连），而不施加外部电位或接触 具有衬底表面的处理衬垫。

公开(公告)号：US20080041725A1

公开(公告)日：2008-02-21

申请号：US11507291

申请日：2006-08-21

申请人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

发明人： Rita J. Klein ,  Dale W. Collins ,  Paul Morgan ,  Joseph N. Greeley ,  Nishant Sinha

IPC分类号： B01D35/06

CPC分类号： H01L21/67086 ,  B82Y30/00 ,  C23F1/02 ,  C23F1/10 ,  H01B1/122 ,  H01L21/32115 ,  H01L21/67075

摘要： An electrolyte solution, methods, and systems for selectively removing a conductive metal from a substrate are provided. The electrolyte solution comprising nanoparticles that are more noble than the conductive metal being removed, is applied to a substrate to remove the conductive metal selectively relative to a dielectric material without application of an external potential or contact of a processing pad with the surface of the substrate. The solutions and methods can be applied, for example, to remove a conductive metal layer (e.g., barrier metal) selectively relative to dielectric material and to a materially different conductive metal (e.g., copper interconnect) without application of an external potential or contact of a processing pad with the surface of the substrate.

摘要翻译： 提供了一种用于从衬底选择性地去除导电金属的电解质溶液，方法和系统。 将包含比被除去的导电金属更贵的纳米颗粒的电解质溶液施加到基板上以相对于电介质材料选择性地去除导电金属，而不施加外部电位或处理垫与基板表面的接触 。 解决方案和方法可以应用于例如相对于电介质材料选择性地去除导电金属层（例如阻挡金属），并且可以应用于物理上不同的导电金属（例如，铜互连），而不施加外部电位或接触 具有衬底表面的处理衬垫。

公开(公告)号：US20070289792A1

公开(公告)日：2007-12-20

申请号：US11894274

申请日：2007-08-20

申请人： Steven Bataille ,  Douglas Crow ,  David Hardy ,  Gary Lewis ,  Paul Morgan ,  Peter Mulgrew ,  Duane Newman ,  Gerald Skelton ,  Geoff Stewart ,  Michael Welsh

发明人： Steven Bataille ,  Douglas Crow ,  David Hardy ,  Gary Lewis ,  Paul Morgan ,  Peter Mulgrew ,  Duane Newman ,  Gerald Skelton ,  Geoff Stewart ,  Michael Welsh

IPC分类号： B62D39/00

CPC分类号： B62D21/183 ,  B60L50/62 ,  B60L50/66 ,  B60L58/21 ,  B60L2200/22 ,  B62D29/043 ,  B62D31/003 ,  Y02T10/6217 ,  Y02T10/7005 ,  Y02T10/7061 ,  Y02T10/7077

摘要： A golf car or utility vehicle having a composite body. In some aspects of the invention, the golf car or utility vehicle has a composite body assembly that includes a front clam shell assembly and a rear shell-like body. In other aspects, the golf car or utility vehicle includes a composite body assembly having a periphery and one or more decorative body panels, the decorative body panels being recessed inwardly relative to the composite body assembly periphery to prevent impacts to the panels.

摘要翻译： 具有复合体的高尔夫球车或多功能车。 在本发明的一些方面，高尔夫球车或多用途车具有复合体组件，其包括前蛤壳组件和后壳体。 在其他方面，高尔夫球车或多功能车包括具有周边和一个或多个装饰性主体面板的复合体组件，该装饰性主体面板相对于复合体组件外围向内凹入以防止对面板的冲击。

公开(公告)号：US20050215064A1

公开(公告)日：2005-09-29

申请号：US11130658

申请日：2005-05-16

申请人： Paul Morgan

发明人： Paul Morgan

IPC分类号： C11D7/08 ,  C11D11/00 ,  H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC分类号： H01L21/02071 ,  C11D7/08 ,  C11D11/0047 ,  H01L21/31116 ,  H01L21/32134 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76838

摘要： The invention encompasses a semiconductor processing method of cleaning a surface of a copper-containing material by exposing the surface to an acidic mixture comprising Cl−, NO3− and F−. The invention also includes a semiconductor processing method of forming an opening to a copper-containing substrate. Initially, a mass is formed over the copper-containing substrate. The mass comprises at least one of a silicon nitride and a silicon oxide. An opening is etched through the mass and to the copper-containing substrate. A surface of the copper-containing substrate defines a base of the opening, and is referred to as a base surface. The base surface of the copper-containing substrate is at least partially covered by at least one of a copper oxide, a silicon oxide or a copper fluoride. The base surface is cleaned with a cleaning solution comprising hydrochloric acid, nitric acid and hydrofluoric acid to remove at least some of the at least one of a copper oxide, a silicon oxide or a copper fluoride from over the base surface.

摘要翻译： 本发明包括通过将表面暴露于酸性混合物中来清洗含铜材料的表面的半导体加工方法，所述酸性混合物包括含有Cl， / SUP>和F 。 本发明还包括形成对含铜基板的开口的半导体加工方法。 最初，在含铜基板上形成质量。 质量包括氮化硅和氧化硅中的至少一种。 通过该质量体和含铜衬底蚀刻开口。 含铜基材的表面限定了开口的基部，并且被称为基底表面。 含铜基材的基面至少部分被铜氧化物，氧化硅或氟化铜中的至少一种覆盖。 用包含盐酸，硝酸和氢氟酸的清洗溶液清洗基面，从基底表面上除去铜氧化物，氧化硅或氟化铜中的至少一种。

公开(公告)号：US4682847A

公开(公告)日：1987-07-28

申请号：US669239

申请日：1984-11-07

申请人： Robert H. Moore ,  Paul Morgan

发明人： Robert H. Moore ,  Paul Morgan

IPC分类号： H01R13/502 ,  H01R13/52 ,  H01R13/629 ,  G02B6/36

CPC分类号： H01R13/62933 ,  H01R13/502 ,  H01R13/52

摘要： For releasable connection of a first apparatus (e.g. an electric cable) to a second apparatus (e.g. an electric switch) for conductive communication therebetween, a connector comprises a plug (1), a socket (2), an over-center buckle (14-17) and an "O"-ring (19), the latter being housed in said socket (2) and arranged to be compressed in the course of, the engagement of said plug and socket as effected by displacement of said buckle. The "O" ring upon compression tends to resile in a sense to displace the buckle towards its engaged state. This provides both the requisite locking between the plug and the socket, and also a seal against the ingress of moisture into the socket. Interengaging contacts (7,11) are each carried on a non-conductive carrier member (23,27), the carrier members having resilient tongues and lips (24,25,28,29) for retention in the plug and socket respectively by snap action over a step (26,30) within body portions (9,12) of the plug and socket respectively.

摘要翻译： 为了将第一装置（例如电缆）可释放地连接到第二装置（例如电开关），用于在它们之间进行导电连通，连接器包括插头（1），插座（2），过中心的带扣（14） -17）和“O”形环（19），后者被容纳在所述插座（2）中并且被布置成在所述插头和插座的接合过程中被压缩，这是通过所述带扣的移位而实现的。 压缩时的“O”环在某种意义上倾向于使带扣朝向接合状态移位。 这提供了插头和插座之间必需的锁定，以及防止湿气进入插座的密封件。 引导接触件（7,11）各自承载在非导电载体构件（23,27）上，载体构件具有弹性舌和唇缘（24,25,28,29），用于分别通过卡扣保持在插头和插座中 分别在插头和插座的主体部分（9,12）内的台阶（26,30）上的动作。

公开(公告)号：US20120220126A1

公开(公告)日：2012-08-30

申请号：US13466349

申请日：2012-05-08

申请人： Paul Morgan ,  Nishant Sinha

发明人： Paul Morgan ,  Nishant Sinha

IPC分类号： H01L21/283

CPC分类号： H01L21/283 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76879

摘要： Selective deposition of metal over dielectric layers in a manner that minimizes of eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured as allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over substrate layer.

摘要翻译： 提供金属在电介质层上的选择性沉积，以最小化消除键孔形成的方式。 根据一个实施例，介电目标层形成在衬底层上，其中目标层可以被配置为允许保形金属沉积，并且在目标层上形成电介质第二层，其中第二层可被配置为允许 自下而上的金属沉积。 然后可以在第二层中形成开口，并且可以在衬底层上选择性地沉积金属。

公开(公告)号：US20120157612A1

公开(公告)日：2012-06-21

申请号：US13307734

申请日：2011-11-30

申请人： Paul Morgan ,  Brodie Wright

发明人： Paul Morgan ,  Brodie Wright

IPC分类号： C08L33/08 ,  C08L79/02 ,  C08L75/04 ,  B28B5/00 ,  C08L75/06

CPC分类号： C08G18/6216 ,  B29C37/0028 ,  B29C37/0032 ,  B29C2037/0039 ,  B32B5/14 ,  B32B23/00 ,  B32B23/04 ,  B32B33/00 ,  B32B2317/18 ,  C08G18/706 ,  C09D105/00 ,  C09D105/08 ,  C09D175/04 ,  C09D179/08 ,  Y10T428/31971

摘要： An in-mold coated article which is prepared in association with cationic-stabilized dispersions. Preferred cationic-stabilized dispersions, include cationic-stabilized polyurethane dispersions, cationic-stabilized acrylic dispersions, cationic-stabilized polyacrylamides, cationic-stabilized polyallylamines, cationic-stabilized polyetheramines, cationic-stabilized chitosans and/or combinations thereof. The present invention further provides methods for manufacturing in-mold coated articles which are prepared in association with cationic-stabilized dispersions in a consistent and/or repeatable manner.

摘要翻译： 与阳离子稳定分散体结合制备的模内涂覆制品。 优选的阳离子稳定的分散体包括阳离子稳定的聚氨酯分散体，阳离子稳定的丙烯酸分散体，阳离子稳定的聚丙烯酰胺，阳离子稳定的聚烯丙胺，阳离子稳定的聚醚胺，阳离子稳定的壳聚糖和/或它们的组合。 本发明进一步提供了制备与阳离子稳定的分散体一致和/或可重复的方式相结合的模内涂覆制品的方法。

公开(公告)号：US08119535B2

公开(公告)日：2012-02-21

申请号：US12636581

申请日：2009-12-11

申请人： Luan Tran ,  William T Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K Abatchev ,  Gurtej S Sandhu ,  D. Mark Durcan

发明人： Luan Tran ,  William T Rericha ,  John Lee ,  Ramakanth Alapati ,  Sheron Honarkhah ,  Shuang Meng ,  Puneet Sharma ,  Jingyi Bai ,  Zhiping Yin ,  Paul Morgan ,  Mirzafer K Abatchev ,  Gurtej S Sandhu ,  D. Mark Durcan

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/0338 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088

摘要： Differently-sized features of an integrated circuit are formed by etching a substrate using a mask which is formed by combining two separately formed patterns. Pitch multiplication is used to form the relatively small features of the first pattern and conventional photolithography used to form the relatively large features of the second pattern. Pitch multiplication is accomplished by patterning a photoresist and then etching that pattern into an amorphous carbon layer. Sidewall spacers are then formed on the sidewalls of the amorphous carbon. The amorphous carbon is removed, leaving behind the sidewall spacers, which define the first mask pattern. A bottom anti-reflective coating (BARC) is then deposited around the spacers to form a planar surface and a photoresist layer is formed over the BARC. The photoresist is next patterned by conventional photolithography to form the second pattern, which is then is transferred to the BARC. The combined pattern made out by the first pattern and the second pattern is transferred to an underlying amorphous silicon layer and the pattern is subjected to a carbon strip to remove BARC and photoresist material. The combined pattern is then transferred to the silicon oxide layer and then to an amorphous carbon mask layer. The combined mask pattern, having features of difference sizes, is then etched into the underlying substrate through the amorphous carbon hard mask layer.

摘要翻译： 通过使用通过组合两个单独形成的图案形成的掩模蚀刻衬底来形成集成电路的不同尺寸的特征。 间距乘法用于形成第一图案的相对较小的特征以及用于形成第二图案的较大特征的常规光刻。 间距倍增通过对光致抗蚀剂进行图案化，然后将该图案蚀刻成无定形碳层来实现。 然后在无定形碳的侧壁上形成侧壁间隔物。 去除无定形碳，留下限定第一掩模图案的侧壁间隔物。 然后将底部抗反射涂层（BARC）沉积在间隔物周围以形成平坦表面，并且在BARC上形成光致抗蚀剂层。 接下来通过常规光刻法将光致抗蚀剂图案化以形成第二图案，然后将其转印到BARC。 通过第一图案和第二图案形成的组合图案被转印到下面的非晶硅层，并且图案经受碳带以去除BARC和光致抗蚀剂材料。 然后将组合图案转移到氧化硅层，然后转移到无定形碳掩模层。 具有不同尺寸特征的组合掩模图案然后通过无定形碳硬掩模层蚀刻到下面的衬底中。

公开(公告)号：US07915735B2

公开(公告)日：2011-03-29

申请号：US11198208

申请日：2005-08-05

申请人： Paul Morgan ,  Nishant Sinha

发明人： Paul Morgan ,  Nishant Sinha

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/44

CPC分类号： H01L21/283 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76879

摘要： Selective deposition of metal over dielectric layers in a manner that minimizes or eliminates keyhole formation is provided. According to one embodiment, a dielectric target layer is formed over a substrate layer, wherein the target layer may be configured to allow conformal metal deposition, and a dielectric second layer is formed over the target layer, wherein the second layer may be configured to allow bottom-up metal deposition. An opening may then be formed in the second layer and metal may be selectively deposited over the substrate layer.

摘要翻译： 提供了以最小化或消除钥匙孔形成的方式在电介质层上选择性沉积金属。 根据一个实施例，介电目标层形成在衬底层上，其中目标层可以被配置为允许保形金属沉积，并且在目标层上形成介电第二层，其中第二层可以被配置为允许 自下而上的金属沉积。 然后可以在第二层中形成开口，并且可以在衬底层上选择性地沉积金属。

公开(公告)号：US07659210B2

公开(公告)日：2010-02-09

申请号：US11748196

申请日：2007-05-14

申请人： Ramakanth Alapati ,  Paul Morgan ,  Max Hineman

发明人： Ramakanth Alapati ,  Paul Morgan ,  Max Hineman

IPC分类号： H01L21/302

CPC分类号： H01L21/32134 ,  B82Y10/00 ,  H01L21/28273

摘要： A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant.

摘要翻译： 一种用于在绝缘层上选择性去除纳米晶体的方法。 该方法包括在其上提供具有纳米晶体的绝缘层; 将纳米晶体暴露于包含游离基氯源，离子氯或二者的高密度等离子体，以修饰纳米晶体; 并用湿蚀刻剂去除修饰的纳米晶体。