Abstract:
A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.
Abstract:
A multi-column electron beam device includes an electron source comprising multiple field emitters fabricated on a surface of a silicon substrate. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitters. The field emitters can take various shapes including a pyramid, a cone, or a rounded whisker. Optional gate layers may be placed on the output surface near the field emitters. The field emitter may be p-type or n-type doped. Circuits may be incorporated into the wafer to control the emission current. A light source may be configured to illuminate the electron source and control the emission current. The multi-column electron beam device may be a multi-column electron beam lithography system configured to write a pattern on a sample.
Abstract:
An improved solid-state laser for generating sub-200 nm light is described. This laser uses a fundamental wavelength between about 1030 nm and 1065 nm to generate the sub-200 nm light. The final frequency conversion stage of the laser creates the sub-200 nm light by mixing a wavelength of approximately 1109 nm with a wavelength of approximately 234 nm. By proper selection of non-linear media, such mixing can be achieved by nearly non-critical phase matching. This mixing results in high conversion efficiency, good stability, and high reliability.
Abstract:
A DUV laser includes an optical bandwidth filtering device, such as etalon, which is disposed outside of the laser oscillator cavity of the fundamental laser, and which directs one range of wavelengths into one portion of a frequency conversion chain and another range of wavelengths into another portion of the frequency conversion train, thereby reducing the bandwidth of the DUV laser output while maintaining high conversion efficiency in the frequency conversion chain.
Abstract:
A laser for generating deep ultra-violet (DUV) continuous wave (CW) light includes a second-harmonic generator and a fourth-harmonic generator. The fourth-harmonic generator includes a plurality of mirrors as well as a first non-linear optical (NLO) crystal and a pair of tilted plates. The first NLO crystal generates the light having the fourth harmonic wavelength and a first astigmatism, and is placed in operative relation to the plurality of mirrors. The pair of tilted plates is placed in operative relation to the first NLO crystal such that the light having the second harmonic wavelength passes through both of the tilted plates. Notably, the pair of tilted plates are disposed at substantially equal and opposite angles about respective parallel axes such that they introduce a second astigmatism that corrects for the first astigmatism while minimizing displacement of the circulated light.
Abstract:
A laser system includes a nonlinear optical (NLO) crystal, wherein the NLO crystal is annealed within a selected temperature range. The NLO crystal is passivated with at least one of hydrogen, deuterium, a hydrogen-containing compound or a deuterium-containing compound to a selected passivation level. The system further includes at least one light source, wherein at least one light source is configured to generate light of a selected wavelength and at least one light source is configured to transmit light through the NLO crystal. The system further includes a crystal housing unit configured to house the NLO crystal.
Abstract:
A method of operating an image sensor with a continuously moving object is described. In this method, a timed delay integration mode (TDI-mode) operation can be performed during an extended-time illumination pulse. During this TDI-mode operation, charges stored by pixels of the image sensor are shifted only in a first direction, and track the image motion. Notably, a split-readout operation is performed only during non-illumination. During this split-readout operation, first charges stored by first pixels of the image sensor are shifted in the first direction and second charges stored by second pixels of the image sensor are concurrently shifted in a second direction, the second direction being opposite to the first direction.
Abstract:
An inspection system for inspecting a surface of a wafer/mask/reticle can include a modular array. The modular array can include a plurality of time delay integration (TDI) sensor modules, each TDI sensor module having a TDI sensor and a plurality of localized circuits for driving and processing the TDI sensor. At least one of the localized circuits can control a clock associated with the TDI sensor. At least one light pipe can be used to distribute a source illumination to the plurality of TDI sensor modules. The plurality of TDI sensor modules can be positioned capture a same inspection region or different inspection regions. The plurality of TDI sensor modules can be identical or provide for different integration stages. Spacing of the modules can be arranged to provide 100% coverage of the inspection region in one pass or for fractional coverage requiring two or more passes for complete coverage.
Abstract:
Inspection of EUV patterned masks, blank masks, and patterned wafers generated by EUV patterned masks requires high magnification and a large field of view at the image plane. An EUV inspection system can include a light source directed to an inspected surface, a detector for detecting light deflected from the inspected surface, and an optic configuration for directing the light from the inspected surface to the detector. In particular, the detector can include a plurality of sensor modules. Additionally, the optic configuration can include a plurality of mirrors that provide magnification of at least 100× within an optical path less than 5 meters long. In one embodiment, the optical path is approximately 2-3 meters long.
Abstract:
A method of operating an image sensor with a continuously moving object is described. In this method, a timed delay integration mode (TDI-mode) operation can be performed during an extended-time illumination pulse. During this TDI-mode operation, charges stored by pixels of the image sensor are shifted only in a first direction, and track the image motion. Notably, a split-readout operation is performed only during non-illumination. During this split-readout operation, first charges stored by first pixels of the image sensor are shifted in the first direction and second charges stored by second pixels of the image sensor are concurrently shifted in a second direction, the second direction being opposite to the first direction.