公开(公告)号：US09781783B2

公开(公告)日：2017-10-03

申请号：US13442073

申请日：2012-04-09

申请人： Koichiro Kamata ,  Yutaka Shionoiri ,  Shunpei Yamazaki

发明人： Koichiro Kamata ,  Yutaka Shionoiri ,  Shunpei Yamazaki

IPC分类号： G06F3/038 ,  H05B33/08 ,  H01L27/32

CPC分类号： H05B33/0815 ,  H01L27/3244 ,  H01L2251/5361 ,  H05B33/0896

摘要： A highly reliable light-emitting device is provided. A lighting device or a display device with a high level of safety and without an exposed electrode is provided. A lighting device or a display device with high layout flexibility is provided. A light-emitting system or a display system to which the light-emitting device or the display device can be applied is provided. An electrode for receiving power and a rectifier circuit are provided in a light-emitting device including an organic EL element and arranged so as to face an electrode for transmitting power, whereby alternating-current power is supplied to the light-emitting device. The alternating-current power is rectified by the rectifier circuit to direct-current power so that the organic EL element in the light-emitting device is driven.

公开(公告)号：US09722212B2

公开(公告)日：2017-08-01

申请号：US13372087

申请日：2012-02-13

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01L21/84 ,  H01L51/56 ,  H01L27/32

CPC分类号： H01L51/56 ,  H01L27/3246

摘要： The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced.

公开(公告)号：US09704446B2

公开(公告)日：2017-07-11

申请号：US13022879

申请日：2011-02-08

申请人： Shunpei Yamazaki ,  Jun Koyama

发明人： Shunpei Yamazaki ,  Jun Koyama

IPC分类号： G09G5/00 ,  G09G3/36

CPC分类号： G09G3/3614 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2310/0297 ,  G09G2310/06 ,  G09G2310/08 ,  G09G2320/0214 ,  G09G2320/0247 ,  G09G2330/021 ,  G09G2330/023

摘要： An object is to reduce power consumption of a display device and to suppress deterioration of display quality. As a transistor provided for each pixel, a transistor including an oxide semiconductor layer is used. Note that off-state current of the transistor can be decreased when the oxide semiconductor layer is highly purified. Therefore, variation in the value of a data signal due to the off-state current of the transistor can be suppressed. That is, display deterioration (change) which occurs when writing frequency of the data signal to the pixel including the transistor is reduced (when a break period is lengthened) can be suppressed. In addition, flickers in display which generates when the frequency of an alternating-current driving signal supplied to a signal line in the break period is reduced can be suppressed.

公开(公告)号：US09546416B2

公开(公告)日：2017-01-17

申请号：US13221140

申请日：2011-08-30

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： C30B25/00 ,  C23C14/08 ,  C23C14/54 ,  C23C14/56 ,  C30B29/16 ,  C30B25/10

CPC分类号： C23C14/08 ,  C23C14/086 ,  C23C14/541 ,  C23C14/564 ,  C30B25/10 ,  C30B25/105 ,  C30B29/16

摘要： An oxide semiconductor film with excellent crystallinity is formed. At the time when an oxide semiconductor film is formed, as a substrate is heated to a temperature of higher than or equal to a first temperature and lower than a second temperature, a part of the substrate having a typical length of 1 nm to 1 μm is heated to a temperature higher than or equal to the second temperature. Here, the first temperature means a temperature at which crystallization occurs with some stimulation, and the second temperature means a temperature at which crystallization occurs spontaneously without any stimulation. Further, the typical length is defined as the square root of a value obtained in such a manner that the area of the part is divided by the circular constant.

摘要翻译： 形成具有优异结晶度的氧化物半导体膜。 在形成氧化物半导体膜时，作为基板被加热至高于或等于第一温度且低于第二温度的温度时，具有典型长度为1nm至1μm的基板的一部分 被加热到高于或等于第二温度的温度。 这里，第一温度是指在某种刺激下发生结晶的温度，第二温度是指没有任何刺激自发发生结晶的温度。 此外，典型长度被定义为以使得部件的面积除以圆形常数的方式获得的值的平方根。

公开(公告)号：US09448433B2

公开(公告)日：2016-09-20

申请号：US12978770

申请日：2010-12-27

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yoshiharu Hirakata

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yoshiharu Hirakata

IPC分类号： G09G5/42 ,  G02F1/1335 ,  G09G3/34

CPC分类号： G09G3/3413 ,  G02F1/133345 ,  G02F1/1334 ,  G02F1/133514 ,  G02F1/133555 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2203/01 ,  G02F2203/04 ,  G09G3/2003 ,  G09G3/3406 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0237 ,  G09G2310/08 ,  G09G2320/0247 ,  G09G2320/0261 ,  G09G2320/064 ,  G09G2320/0646 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2330/022

摘要： An object is to provide a liquid crystal display device which can recognize image display even when the liquid crystal display device is used in a dim environment. In one pixel, a pixel electrode including both of a region where incident light through a liquid crystal layer is reflected and a transmissive region is provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. When there is external light with insufficient brightness, that is, in a dim environment, the backlight emits weak light and an image is displayed in the reflective mode, whereby image display can be performed.

摘要翻译： 本发明的目的是提供一种液晶显示装置，即使在液晶显示装置在昏暗的环境中使用时也能够识别图像显示。 在一个像素中，包括反射通过液晶层的入射光的区域和设置有透射区域的像素电极的像素电极，并且可以以两种模式执行图像显示：将外部光用作照明的反射模式 光源; 以及将背光用作照明光源的透射模式。 当存在亮度不足的外部光，即，在昏暗的环境中，背光发出弱光，并且以反射模式显示图像，由此可以执行图像显示。

公开(公告)号：US09437768B2

公开(公告)日：2016-09-06

申请号：US13615700

申请日：2012-09-14

申请人： Yoichiro Numasawa ,  Yasushi Maeda ,  Yoshikazu Hiura ,  Shunpei Yamazaki

发明人： Yoichiro Numasawa ,  Yasushi Maeda ,  Yoshikazu Hiura ,  Shunpei Yamazaki

IPC分类号： H01L31/044 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0312

CPC分类号： H01L31/072 ,  H01L31/0312 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.

摘要翻译： 提供具有低电阻损耗和高转换效率的光电转换装置。 光电转换装置包括在一对电极之间的第一硅半导体层和第二硅半导体层。 第一硅半导体层设置在具有一种导电类型的结晶硅衬底的一个表面上，并且具有与晶体硅衬底相反的导电类型，并且第二硅半导体层设置在晶体硅衬底的另一个表面上 并且具有与晶体硅衬底相同的导电类型。 此外，第一硅半导体层和第二硅半导体层各自具有在膜厚度方向上变化的载流子浓度。

公开(公告)号：US09437758B2

公开(公告)日：2016-09-06

申请号：US13398872

申请日：2012-02-17

申请人： Shunpei Yamazaki ,  Fumito Isaka ,  Jiro Nishida

发明人： Shunpei Yamazaki ,  Fumito Isaka ,  Jiro Nishida

IPC分类号： H01L31/00 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/068 ,  H01L31/056

CPC分类号： H01L31/02363 ,  H01L31/028 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

摘要： A photoelectric conversion device in photoelectric conversion in a light-absorption region in a crystalline silicon substrate is efficiently performed is provided. In the photoelectric conversion device, a light-transmitting conductive film which has a high effect of passivation of defects on a silicon surface and improves the reflectance on a back electrode side is provided between the back electrode and the crystalline silicon substrate, The light-transmitting conductive film includes an organic compound and an inorganic compound. The organic compound includes 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine. The inorganic compound includes an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table.

摘要翻译： 提供了一种在晶体硅衬底中的光吸收区域中进行光电转换的光电转换装置。 在光电转换装置中，在背面电极和结晶硅基板之间设置有具有高的硅表面上的缺陷钝化和提高背面电极侧的反射率的透光性导电膜。透光性 导电膜包括有机化合物和无机化合物。 有机化合物包括4-苯基-4' - （9-苯基芴-9-基）三苯胺。 无机化合物包括属于周期表第4至8族中任何一种的金属的氧化物。

公开(公告)号：US09401247B2

公开(公告)日：2016-07-26

申请号：US13613874

申请日：2012-09-13

申请人： Ryota Tajima ,  Shunpei Yamazaki ,  Hideomi Suzawa ,  Takeshi Osada

发明人： Ryota Tajima ,  Shunpei Yamazaki ,  Hideomi Suzawa ,  Takeshi Osada

IPC分类号： H01M4/02 ,  H01M4/13 ,  H01G11/30 ,  B82Y30/00 ,  H01M4/62 ,  H01M4/134 ,  H01M4/38 ,  H01G11/26 ,  H01G11/66 ,  H01M10/0525

CPC分类号： H01G11/30 ,  B82Y30/00 ,  H01G11/26 ,  H01G11/66 ,  H01M4/13 ,  H01M4/134 ,  H01M4/386 ,  H01M4/62 ,  H01M4/625 ,  H01M10/0525 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7022

摘要： Provided is a negative electrode for a power storage device in which charge/discharge capacity is high and deterioration in battery characteristics due to charge/discharge is small. The negative electrode for a power storage device includes a negative electrode active material having a plurality of protrusions and a bar which serves as a connecting bridge over a first protrusion and a second protrusion among the plurality of protrusions. The bar is provided in a direction perpendicular to a direction in which a current collector is bent. An axis of the first protrusion and an axis of the second protrusion are oriented in the same direction. Further, a graphene covering a side surface of the protrusion or covering the side surface of the protrusion and a top surface of the bar may be provided.

摘要翻译： 提供了一种蓄电装置的负极，其充放电容量高，充放电引起的电池特性的劣化小。 蓄电装置用负极包括具有多个突起的负极活性物质和作为多个突起之间的第一突起和第二突起的连接桥的棒。 该杆沿垂直于集电体弯曲方向的方向设置。 第一突起的轴线和第二突起的轴线朝向相同的方向。 此外，可以提供覆盖突起的侧表面或覆盖突起的侧表面和条的顶表面的石墨烯。

公开(公告)号：US09384439B2

公开(公告)日：2016-07-05

申请号：US11596806

申请日：2005-06-10

申请人： Shunpei Yamazaki ,  Kiyoshi Kato

发明人： Shunpei Yamazaki ,  Kiyoshi Kato

IPC分类号： G06K19/06 ,  G06K19/077 ,  H01L27/12

CPC分类号： H01L27/1218 ,  G02F1/13338 ,  G02F1/1368 ,  G06K7/10217 ,  G06K19/07749 ,  H01L23/66 ,  H01L24/32 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1266 ,  H01L29/78678 ,  H01L29/78696 ,  H01L2223/6677 ,  H01L2224/32225 ,  H01L2924/13069 ,  H01L2924/141 ,  H01L2924/1432 ,  H01L2924/1579

摘要： It is an object of the present invention to provide a semiconductor device in which a sophisticated integrated circuit using a polycrystalline semiconductor is formed over a substrate which is weak with heat such as a plastic substrate or a plastic film substrate and a semiconductor device which transmits/receives power or a signal without wires, and a communication system thereof. One feature of the invention is that a semiconductor device, specifically, a processor, in which a sophisticated integrated circuit is fixed to a plastic substrate which is weak with heat by a stripping method such as a stress peel of process method to transmit/receive power or a signal without wires, for example, with an antenna or a light receiving element.

摘要翻译： 本发明的目的是提供一种半导体器件，其中使用多晶半导体的复杂集成电路形成在诸如塑料基板或塑料薄膜基板的热弱的基板上，并且半导体器件透射/ 接收电力或没有电线的信号，以及其通信系统。 本发明的一个特征在于，一种半导体装置，特别是一种处理器，其中一个复杂的集成电路固定在一个塑料基板上，该塑料基板通过诸如剥离方法的热而被加热，该剥离方法用于传递/接收电力 或没有电线的信号，例如具有天线或光接收元件。

公开(公告)号：US09349750B2

公开(公告)日：2016-05-24

申请号：US14077390

申请日：2013-11-12

申请人： Hiroyuki Miyake ,  Shunpei Yamazaki ,  Yoshifumi Tanada ,  Manabu Sato ,  Toshinari Sasaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Takuya Matsuo ,  Hiroshi Matsukizono ,  Yosuke Kanzaki ,  Shigeyasu Mori

发明人： Hiroyuki Miyake ,  Shunpei Yamazaki ,  Yoshifumi Tanada ,  Manabu Sato ,  Toshinari Sasaki ,  Kenichi Okazaki ,  Junichi Koezuka ,  Takuya Matsuo ,  Hiroshi Matsukizono ,  Yosuke Kanzaki ,  Shigeyasu Mori

IPC分类号： H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/78648

摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.

摘要翻译： 半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。 施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。