公开(公告)号：US07995374B2

公开(公告)日：2011-08-09

申请号：US12618122

申请日：2009-11-13

申请人： Masanori Komura ,  Mitsuru Sato ,  Kenichi Murooka ,  Motoya Kishida

发明人： Masanori Komura ,  Mitsuru Sato ,  Kenichi Murooka ,  Motoya Kishida

IPC分类号： G11C11/00 ,  G11C11/36 ,  G11C17/00 ,  G11C29/00

CPC分类号： G11C13/0007 ,  G11C13/0004 ,  G11C13/004 ,  G11C2213/31 ,  G11C2213/71 ,  G11C2213/72 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1675

摘要： A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line.

摘要翻译： 存储单元包括可变电阻膜; 具有与所述可变电阻膜的一个表面接触的一个表面的第一导电膜; 以及具有与可变电阻膜的另一表面接触的一个表面的第二导电膜。 第一导电膜或第二导电膜在与第一导电膜或第二导电膜中的电流方向正交的方向上的宽度小于在与方向正交的方向上的可变电阻膜的宽度 电流在可变电阻膜中流动。 第一导电膜和第二导电膜的宽度小于与第一线和第二线中的电流方向正交的方向上的第一线和第二线的宽度。

公开(公告)号：US07963435B2

公开(公告)日：2011-06-21

申请号：US12358689

申请日：2009-01-23

申请人： Mitsuru Sato ,  Takatoshi Yamamoto

发明人： Mitsuru Sato ,  Takatoshi Yamamoto

IPC分类号： B23K31/02

CPC分类号： B32B37/00 ,  B23K20/02 ,  B23K2101/40 ,  B32B7/04 ,  B32B7/12 ,  B32B15/043 ,  B32B15/08 ,  B32B27/08 ,  B32B27/283 ,  B32B38/0008 ,  B32B2038/0092 ,  B32B2255/06 ,  B32B2255/10 ,  B32B2255/205 ,  B32B2255/28 ,  B32B2307/202 ,  B32B2307/302 ,  B32B2307/308 ,  B32B2307/54 ,  B32B2310/14 ,  B32B2457/00 ,  B32B2457/18 ,  B32B2457/202 ,  B32B2457/206 ,  C23C16/18 ,  C23C16/30 ,  Y10T428/265

摘要： A method of forming a bonded body comprised of a first base member, a second base member, and a first bonding film and a second bonding film provided between the first base member and the second base member is provided. The first bonding film and the second bonding film are constituted of copper and an organic component, and an amount of copper contained in each of the first bonding film and the second bonding film is 90 atom % or higher but lower than 99 atom % at an atomic ratio. The method is comprised of: forming the first bonding film on the first base member by using a chemical vapor-film formation method; forming the second bonding film on the second base member by using a chemical vapor-film formation method; bringing the first bonding film formed on the first base member into contact with the second bonding film formed on the second base member so that the first bonding film faces the second bonding film; and applying a compressive force to the first base member and the second base member so that the first bonding film and the second bonding film are bonded together to thereby obtain the bonded body. Two base members can be firmly and efficiently bonded together with high dimensional accuracy at a low temperature, and the two base members can be efficiently separated (peeled off) to each other after use of the bonded body. Further, a bonded body is also provided.

摘要翻译： 提供一种形成由第一基底构件，第二基底构件和第一接合膜构成的接合体的方法和设置在第一基底构件和第二基底构件之间的第二接合薄膜。 第一接合膜和第二接合膜由铜和有机成分构成，并且在第一接合膜和第二接合膜中的每一个中的铜量为90原子％以上且低于99原子％ 原子比。 该方法包括：通过使用化学气相成膜法在第一基底构件上形成第一接合膜; 通过使用化学气相成膜法在第二基底构件上形成第二接合膜; 使形成在第一基底构件上的第一接合膜与形成在第二基底构件上的第二接合膜接触，使得第一接合膜面向第二接合膜; 并且向第一基底构件和第二基底构件施加压缩力，使得第一接合膜和第二接合膜接合在一起，从而获得接合体。 两个基底构件可以在低温下以高尺寸精度牢固有效地粘合在一起，并且在使用粘合体之后可以将两个基底构件彼此有效地分离（剥离）。 此外，还提供了粘合体。

公开(公告)号：US20100201735A1

公开(公告)日：2010-08-12

申请号：US12665284

申请日：2008-06-16

申请人： Mitsuru Sato ,  Yoshiaki Mori

发明人： Mitsuru Sato ,  Yoshiaki Mori

IPC分类号： B41J2/015 ,  H01L21/30

CPC分类号： B41J2/1634 ,  B41J2/161 ,  B41J2/1623 ,  B81C3/001 ,  B81C2203/036 ,  H01L21/187 ,  H01L21/2007 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A bonding method of silicon base members is provided. The bonding method of silicon base members comprises: applying an energy to a surface of a first silicon base member having Si—H bonds on the surface to selectively cut the Si—H bonds so that dangling bonds of the silicon (Si) is exposed on the surface of the first silicon base member; and bonding the surface of the first silicon base member, on which the dangling bonds of the silicon has been exposed, and a surface of a second silicon base member on which dangling bonds of silicon are exposed so that the surface of the first silicon base member and the surface of the second silicon base member are bonded together through their dangling bonds.

摘要翻译： 提供硅基部件的接合方法。 硅基部件的接合方法包括：向表面上具有Si-H键的第一硅基部件的表面施加能量以选择性地切割Si-H键，使得硅（Si）的悬挂键暴露在 第一硅基部件的表面; 并且将暴露了硅的悬挂键的第一硅基部件的表面与硅的悬垂键露出的第二硅基部件的表面接合，使得第一硅基部件的表面 并且第二硅基材的表面通过它们的悬挂键结合在一起。

公开(公告)号：US20100183885A1

公开(公告)日：2010-07-22

申请号：US12665028

申请日：2008-06-16

申请人： Mitsuru Sato ,  Yoshiaki Mori

发明人： Mitsuru Sato ,  Yoshiaki Mori

IPC分类号： B32B37/02 ,  B32B38/00 ,  B05B1/00 ,  B32B9/04

CPC分类号： C09J5/02 ,  B23K26/0624 ,  B23K26/244 ,  B23K26/26 ,  B23K2101/42 ,  B23K2103/56 ,  B41J2/161 ,  B41J2/1623 ,  B41J2/1626 ,  B41J2/1634 ,  B81B2201/052 ,  B81C3/001 ,  B81C2203/036 ,  C09J2400/146 ,  H01L21/187 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2225/0651 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  Y10T156/10 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A bonding method of silicon base members is provided. The bonding method of silicon base members comprises: applying an energy to a first silicon base member including Si—H bonds to selectively cut the Si—H bonds so that the first silicon base member is cleaved and divided to one silicon base member and the other silicon base member, and the one silicon base member having a cleavage surface and dangling bonds of silicon obtained by cutting the Si—H bonds; and bonding the cleavage surface of the one silicon base member and a surface of a second silicon base member on which dangling bonds of silicon are exposed to thereby bond the cleavage surface and the surface together through their dangling bonds.

摘要翻译： 提供硅基部件的接合方法。 硅基部件的接合方法包括：向包括Si-H键的第一硅基部件施加能量以选择性地切割Si-H键，使得第一硅基部件被切割并分成一个硅基部件，而另一个硅基部件 硅基部件和具有通过切割Si-H键获得的硅的断裂面和悬挂键的一个硅基部件; 并且将一个硅基部件的解理面和硅的悬挂键露出的第二硅基部件的表面接合，从而通过其悬挂键将解理面和表面结合在一起。

公开(公告)号：US20100028622A1

公开(公告)日：2010-02-04

申请号：US12442532

申请日：2007-08-27

申请人： Mitsuru Sato

发明人： Mitsuru Sato

IPC分类号： B44C1/17 ,  B32B38/14 ,  B65C9/25 ,  B32B37/00

CPC分类号： B44C1/1733 ,  Y10T156/10 ,  Y10T428/24802

摘要： A nonthermal transfer sheet (11) usable for transfer to various types of objects including daily personal items such as clothing and the like and also human skin. In order to allow transfer to be realized without heating or pressurization, a transfer layer (33), which is or is not provided with a multi-color design layer (32) and is to be a main part of the nonthermal transfer sheet, and an adhesive layer (34) for pasting the transfer layer (33) to a transfer subject (51) are integrated together in advance by heating and pressurization. The transfer layer (33) is formed of a thermoplastic resin containing polyurethane as a main component, and therefore is highly flexible, extendable and transferrable even to human body. The adhesive layer (34) is formed of an adhesive containing an acrylic adhesive, and therefore is not reduced in the adhesive force and can be re-transferred (re-pasted). As a result, a wide range of transfer effects including decoration is provided. In addition, the nonthermal transfer sheet is easily removable and so is easily usable.

摘要翻译： 可用于转移到各种物品（包括日常个人物品如衣服等）以及人类皮肤的非热转印片材（11）。 为了在没有加热或加压的情况下实现转印，设置或不设置多色设计层（32）并且将成为非热转印片材的主要部分的转印层（33），以及 用于将转印层（33）粘贴到转印体（51）上的粘合剂层（34）通过加热和加压预先结合在一起。 转印层（33）由含有聚氨酯作为主要成分的热塑性树脂形成，因此即使对人体也具有高度柔性，可延展性和可转印性。 粘合剂层（34）由含有丙烯酸粘合剂的粘合剂形成，因此不会降低粘合力并且可以再次转移（重新粘贴）。 结果，提供了广泛的转移效果，包括装饰。 此外，非热转印片易于拆除，因此易于使用。

公开(公告)号：US20090078976A1

公开(公告)日：2009-03-26

申请号：US12277958

申请日：2008-11-25

申请人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

发明人： Yoshiaki Kitano ,  Hideshi Abe ,  Jun Kuroiwa ,  Kiyoshi Hirata ,  Hiroaki Ohki ,  Nobuhiro Karasawa ,  Ritsuo Takizawa ,  Mitsuru Yamashita ,  Mitsuru Sato ,  Katsunori Kokubun

IPC分类号： H01L27/146

CPC分类号： H01L27/14601 ,  H01L27/14689 ,  H01L27/14806 ,  H04N5/335

摘要： A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

摘要翻译： 具有这样一种结构的固态成像装置，该结构使得用于读取信号电荷的电极设置在构成像素的光接收传感器部分的一侧; 将预定的电压信号V施加到形成为覆盖除了光接收传感器部分之外的图像拾取区域的遮光膜; 第二导电型半导体区域形成在构成光接收传感器部分的光电转换区域的第一导电型半导体区域的表面上的中心; 并且在第一导电型半导体区域的电极侧的端部的表面上形成比第二导电型半导体区域的杂质浓度低的区域， 像素分离区域。

公开(公告)号：US20080219054A1

公开(公告)日：2008-09-11

申请号：US12039461

申请日：2008-02-28

申请人： Fumitaka ARAI ,  Masaru Kito ,  Mitsuru Sato

发明人： Fumitaka ARAI ,  Masaru Kito ,  Mitsuru Sato

IPC分类号： G11C11/34

CPC分类号： H01L27/115 ,  H01L27/11521 ,  H01L27/11524

摘要： A semiconductor memory device includes a plurality of active areas each extending in a first direction and including a memory cell string which includes select transistors and memory cells, current paths of which are connected in series, a first extension portion which is provided between one-side terminal end portions of two active areas neighboring in a second direction that crosses the first direction, and a second extension portion which is provided between other-side terminal end portions of the two active areas neighboring in the second direction, the first and second extension portions connecting the two active areas in a loop configuration.

摘要翻译： 半导体存储器件包括多个有源区，每个有源区各自沿第一方向延伸，并且包括存储单元串，该存储单元串包括选择晶体管和存储单元，其电流通路串联连接，第一延伸部分设置在一侧 在与第一方向相反的第二方向上相邻的两个有效区域的末端部分和设置在与第二方向相邻的两个有效区域的另一侧终端部分之间的第二延伸部分，第一和第二延伸部分 以循环配置连接两个活动区域。

公开(公告)号：US20080149913A1

公开(公告)日：2008-06-26

申请号：US11962862

申请日：2007-12-21

申请人： Hiroyasu TANAKA ,  Ryota Katsumata ,  Hideaki Aochi ,  Masaru Kito ,  Masaru Kidoh ,  Mitsuru Sato

发明人： Hiroyasu TANAKA ,  Ryota Katsumata ,  Hideaki Aochi ,  Masaru Kito ,  Masaru Kidoh ,  Mitsuru Sato

IPC分类号： H01L27/105 ,  H01L21/8239 ,  H01L45/00

CPC分类号： H01L27/2454 ,  G11C2213/71 ,  G11C2213/75 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144 ,  H01L45/146

摘要： A semiconductor memory device is disclosed, which includes a first memory cell array formed on a semiconductor substrate and composed of a plurality of memory cells stacked in layers each having a characteristic change element and a vertical type memory cell transistor connected in parallel to each other, a plurality of second memory cell arrays formed on the semiconductor substrate and having the same structure as the first memory cell array, and arranged in an X direction with respect to the first memory cell array, and a plurality of third memory cell arrays formed on the semiconductor substrate and having the same structure as the first memory cell array, and arranged in a Y direction with respect to the first memory cell array, wherein a gate voltage is applied to gates of the vertical type memory cell transistors of the first to third memory cell arrays in a same layer.

摘要翻译： 公开了一种半导体存储器件，其包括形成在半导体衬底上的第一存储器单元阵列，并且由堆叠成各自具有彼此并联连接的特征变化元件和垂直型存储单元晶体管的多个存储单元组成， 多个第二存储单元阵列，形成在所述半导体衬底上并具有与所述第一存储单元阵列相同的结构，并且相对于所述第一存储单元阵列沿X方向布置;以及多个第三存储单元阵列， 半导体衬底并且具有与第一存储单元阵列相同的结构，并且相对于第一存储单元阵列在Y方向上布置，其中栅极电压被施加到第一至第三存储器的垂直型存储单元晶体管的栅极 单元阵列在同一层。

公开(公告)号：US20080118871A1

公开(公告)日：2008-05-22

申请号：US11795988

申请日：2006-01-27

申请人： Hideo Namatsu ,  Mitsuru Sato

发明人： Hideo Namatsu ,  Mitsuru Sato

IPC分类号： G03F7/26

CPC分类号： G03F7/40 ,  H01L21/0273

摘要： A fine and high-accuracy resist pattern, which is excellent in etching resistance, can be formed. Disclosed is a resist pattern forming method, which includes the steps of developing a resist composition having photosensitivity to a predetermined light source through a lithography technique to form a resist pattern 2 on a substrate 1, and bringing the resist pattern 2 into contact with a supercritical processing solution 5′ including a supercritical fluid 3′ which contains a crosslinking agent 4.

摘要翻译： 可以形成耐蚀刻性优异的精细且高精度的抗蚀剂图案。 公开了一种抗蚀剂图案形成方法，其包括通过光刻技术显影对预定光源具有光敏性的抗蚀剂组合物以在基板1上形成抗蚀剂图案2并使抗蚀剂图案2与超临界接触的步骤 处理溶液5'，其包含含有交联剂4的超临界流体3'。

公开(公告)号：US07315070B2

公开(公告)日：2008-01-01

申请号：US10960990

申请日：2004-10-12

申请人： Akira Okada ,  Mitsuru Sato ,  Hideo Sato

发明人： Akira Okada ,  Mitsuru Sato ,  Hideo Sato

IPC分类号： H01L29/84 ,  G06K9/00

CPC分类号： H01L27/14678 ,  G06K9/00053 ,  H01L24/32 ,  H01L27/14618 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00

摘要： A fingerprint sensor package includes an LSI chip for reading a fingerprint, a substrate having an external connection terminal and to which the LSI chip is fixed, and a chip fixing mechanism for fixing the LSI chip in a state where the LSI chip is deformed so as to form a curved surface, provided between the LSI chip and the substrate.

摘要翻译： 指纹传感器封装包括用于读取指纹的LSI芯片，具有外部连接端子并且LSI芯片被固定的基板，以及用于在LSI芯片变形的状态下固定LSI芯片的芯片固定机构，以便 以形成设置在LSI芯片和基板之间的曲面。