公开(公告)号：US4802952A

公开(公告)日：1989-02-07

申请号：US158750

申请日：1988-02-22

申请人： Shigeyuki Kobori ,  Kazuji Yamada ,  Ryoichi Kobayashi ,  Atsushi Miyazaki ,  Seikou Suzuki

发明人： Shigeyuki Kobori ,  Kazuji Yamada ,  Ryoichi Kobayashi ,  Atsushi Miyazaki ,  Seikou Suzuki

IPC分类号： G01L7/00 ,  G01L9/00 ,  G01L9/04 ,  H01L27/20 ,  H01L29/84 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： H01L27/20 ,  G01L9/0042 ,  H01L29/84 ,  Y10T29/49103

摘要： A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed therebetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosilicate glass layer (32), the matrix shaped conductive layer (28) is used as a negative electrode during anodic bonding operation so that a high bonding strength is obtained and sodium ions contained in the borosilicate glass layer (32) are kept away from bond regions after completing the anodically bonding operation.

公开(公告)号：US4591780A

公开(公告)日：1986-05-27

申请号：US559467

申请日：1983-12-08

申请人： Kazuji Yamada ,  Ryoichi Kobayashi ,  Yasuo Nagai ,  Isao Shimizu ,  Kanji Kawakami

发明人： Kazuji Yamada ,  Ryoichi Kobayashi ,  Yasuo Nagai ,  Isao Shimizu ,  Kanji Kawakami

IPC分类号： H03F3/343 ,  G05F3/26 ,  G05F3/30 ,  H03F3/34 ,  H03F3/347 ,  G05F3/20

CPC分类号： G05F3/30 ,  G05F3/265

摘要： A current source device controls a rate of change of current flowing through a load so that the change rate of the current is equal to a change rate of a fluctuating supply voltage. A first transistor is fed with the supply voltage via a first resistor connected to its collector and a second resistor connected to its emitter. A second transistor has a base connected to a base of the first transistor, an emitter connected to a third resistor and a collector connected to a load. A current to the load is fed from the supply voltage via the load, the collector and emitter of the second transistor and the third resistor. The collector and base of the first transistor are respectively connected to a base and an emitter of a third transistor having a collector fed with the supply voltage. The ratio between a voltage drop caused across the second resistor by a reference current flowing through the first resistor, the collector and emitter of the first transistor and the second resistor, and a voltage drop caused across the third resistor by an emitter current of the second transistor, which is substantially equal to a collector current of the second transistor flowing through the load, is set to a predetermined value. The emitter area of the second transistor is enlarged beyond that of the first transistor to obtain a sufficiently large output current.

摘要翻译： 电流源装置控制流过负载的电流的变化率，使得电流的变化率等于电源电压波动的变化率。 第一晶体管经由连接到其集电极的第一电阻器和连接到其发射极的第二电阻器馈送电源电压。 第二晶体管具有连接到第一晶体管的基极的基极，连接到第三电阻器的发射极和连接到负载的集电极。 通过负载，第二晶体管的集电极和发射极以及第三电阻从供电电压馈送到负载的电流。 第一晶体管的集电极和基极分别连接到具有馈送有电源电压的集电极的第三晶体管的基极和发射极。 通过流过第一电阻器的参考电流，第一晶体管的集电极和发射极以及第二电阻器在第二电阻器之间引起的电压降之间的比率以及由第二电阻器的发射极电流引起的第三电阻器的电压降 基本上等于流过负载的第二晶体管的集电极电流的晶体管被​​设定为预定值。 第二晶体管的发射极面积比第一晶体管的发射极面积增大，以获得足够大的输出电流。

公开(公告)号：US4604899A

公开(公告)日：1986-08-12

申请号：US597753

申请日：1984-04-06

申请人： Kazuji Yamada ,  Hideo Sato ,  Kanji Kawakami ,  Kazuo Kato ,  Takao Sasayama

发明人： Kazuji Yamada ,  Hideo Sato ,  Kanji Kawakami ,  Kazuo Kato ,  Takao Sasayama

IPC分类号： G01R27/02 ,  G01B7/16 ,  G01D3/028 ,  G01L1/22 ,  G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01L19/04

CPC分类号： G01L1/2281 ,  G01L9/065

摘要： A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gauge resistor changing with an external force. Each gauge resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator for cancelling the effect of the temperature change of the gauge resistors making up the bridge circuit on the amplification factor of the amplification circuit for amplifying the output of the bridge circuit.

摘要翻译： 公开了一种半导体型压力传感器，其中通过使用至少包括用外力改变的量规电阻器的桥式电路将压力变化检测为电阻变化。 每个规格电阻由半导体的PN结制成。 压力传感器还包括放大系数补偿器，用于抵消构成桥式电路的量规电阻器的温度变化对放大电路的放大系数的影响，用于放大桥式电路的输出。

公开(公告)号：US4556807A

公开(公告)日：1985-12-03

申请号：US522227

申请日：1983-08-11

申请人： Kazuji Yamada ,  Hideo Sato ,  Kazuo Kato ,  Takao Sasayama ,  Kanji Kawakami ,  Ryosaku Kanzawa

发明人： Kazuji Yamada ,  Hideo Sato ,  Kazuo Kato ,  Takao Sasayama ,  Kanji Kawakami ,  Ryosaku Kanzawa

IPC分类号： G01L9/04 ,  G01B7/16 ,  G01L9/00 ,  G01L9/06

CPC分类号： G01L9/0054 ,  G01L9/065 ,  Y10S323/907

摘要： A pressure transducer is disclosed comprising a pressure sensor portion having gage resistors in bridge formed on a thin diaphragm of a semiconductor substrate, and a power supply connected to the pressure sensor portion for driving the pressure sensor. The power supply includes a first current source for supplying a temperature-dependent current equivalent to the sum of a current almost proportional to the absolute temperature and a current independent of temperature, and a second current source for sinking the current almost proportional to the temperature characteristic of the gage resistors from the current of the first current source. A temperature compensation circuit is additionally provided to drive the bridge circuit by the difference between the temperature-dependent current and the current proportional to the temperature characteristic in a constant-current driving mode, and by a voltage proportional to the current difference when the output of the bridge circuit is connected to an amplifier whose gain is dependent on temperature.

摘要翻译： 公开了一种压力传感器，包括压电传感器部分，该压力传感器部分具有形成在半导体衬底的薄膜上的桥中的量规电阻器，以及连接到用于驱动压力传感器的压力传感器部分的电源。 电源包括用于提供等效于与绝对温度几乎成比例的电流和独立于温度的电流的和的温度相关电流的第一电流源，以及用于将大体上与温度特性成比例的电流吸收的第二电流源 的电流从第一个电流源的电流。 另外提供温度补偿电路以通过温度相关电流和与恒定电流驱动模式中的温度特性成比例的电流之间的差异来驱动桥式电路，并且通过与当电流差异的电流成比例的电压来驱动桥式电路 桥接电路连接到增益取决于温度的放大器。

公开(公告)号：US4558238A

公开(公告)日：1985-12-10

申请号：US536870

申请日：1983-09-29

申请人： Kazuji Yamada ,  Hideo Sato ,  Yukitaka Kitadate ,  Kanji Kawakami ,  Kazuo Kato ,  Takao Sasayama

发明人： Kazuji Yamada ,  Hideo Sato ,  Yukitaka Kitadate ,  Kanji Kawakami ,  Kazuo Kato ,  Takao Sasayama

IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L9/06

CPC分类号： G01L9/065 ,  Y10S323/907

摘要： A pressure transducer comprises a pressure sensor including a bridge connection of gauging resistors formed on a semiconductor substrate, and a power supply connected to the pressure sensor for driving it and basically acting as a constant current source. The power supply includes at least two transistors formed on the semiconductor substrate. One of the transistors provides a collector current which is less in temperature-dependency relative to that of the other transistor, and the other transistor has a collector circuit connected to the pressure sensor and provides a collector current corresponding to a sum of a substantially temperature-dependent current and a substantially temperature-independent current. A ratio of the temperature-dependent current to the temperature-independent current is adjusted by selecting operation characteristics of the two transistors such that a temperature characteristic of the collector current of the other transistor is substantially inversely proportional to a temperature characteristic of the output of the pressure sensor when it is driven with a constant voltage.

摘要翻译： 压力传感器包括压力传感器，该压力传感器包括形成在半导体衬底上的测量电阻器的桥连接器，以及连接到压力传感器的电源，用于驱动它并基本上作为恒定电流源。 电源包括形成在半导体衬底上的至少两个晶体管。 晶体管中的一个提供了相对于另一个晶体管的温度依赖性较小的集电极电流，另一个晶体管具有连接到压力传感器的集电极电路，并且提供对应于基本上温度相关的总和的集电极电流， 依赖电流和基本上温度无关的电流。 通过选择两个晶体管的工作特性来调节温度依赖电流与独立于温度的电流的比例，使得另一个晶体管的集电极电流的温度特性与输出的温度特性成反比 压力传感器用恒定电压驱动时。

公开(公告)号：US06588647B2

公开(公告)日：2003-07-08

申请号：US10228295

申请日：2002-08-27

申请人： Kazuji Yamada ,  Akihiro Tamba ,  Takayoshi Nakamura ,  Ryuichi Saito ,  Toshio Ogawa ,  Hisanori Okamura

发明人： Kazuji Yamada ,  Akihiro Tamba ,  Takayoshi Nakamura ,  Ryuichi Saito ,  Toshio Ogawa ,  Hisanori Okamura

IPC分类号： B23K2012

CPC分类号： H05K7/20872 ,  H01L2924/0002 ,  H05K7/20927 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/4935 ,  H01L2924/00

摘要： A liquid-cooled circuit device including: a module having a circuit element and a module base plate on surface of which the circuit element is mounted; a circuit case for accommodating the module; and a cooling liquid chamber for flowing a cooling liquid in contact with a back face of the module base plate of said module. The module base plate of the module is fitted into an opening provided in a member forming the cooling liquid chamber and welded without a gap.

公开(公告)号：US5097318A

公开(公告)日：1992-03-17

申请号：US331802

申请日：1989-04-03

申请人： Akira Tanaka ,  Kazuji Yamada ,  Hirokazu Inoue ,  Hideo Arakawa ,  Masahide Okamoto

发明人： Akira Tanaka ,  Kazuji Yamada ,  Hirokazu Inoue ,  Hideo Arakawa ,  Masahide Okamoto

IPC分类号： H01L23/538 ,  H01L23/04 ,  H01L23/057 ,  H01L23/12 ,  H01L23/467 ,  H01L23/498 ,  H01L23/50

CPC分类号： H01L23/49822 ,  H01L23/057 ,  H01L23/467 ,  H01L23/49838 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H01L2924/14 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30107

摘要： A cavity-down type package for a semiconductor device comprises an insulating base substrate on which the semiconductor device and another insulating cap substrate with plural outer connection terminals on its outer surface and with electrodes provided on conductive layers for electric conduction on its inner surface. The electrodes on the insulating base substrate and those on the insulating cap substrate are connected with each other by using conductive material such as bumps.

摘要翻译： 一种用于半导体器件的降空型封装，包括其上安装有半导体器件（1）的绝缘基底（6）和在其外表面上具有多个外连接端子（5）的另一绝缘帽衬底（8） 其中电极（11）设置在导电层（4）上，用于在其内表面上导电。 绝缘基底基板上的电极和绝缘帽基板（8）上的电极通过诸如凸块的导电材料相互连接。

公开(公告)号：US5095359A

公开(公告)日：1992-03-10

申请号：US413622

申请日：1989-09-28

申请人： Akira Tanaka ,  Hirokazu Inoue ,  Kazuji Yamada ,  Kunio Miyazaki ,  Osamu Miura ,  Hideo Arakawa ,  Hiroshi Yokoyama ,  Yoshio Naganuma ,  Atsushi Morihara ,  Katsunori Ouchi

发明人： Akira Tanaka ,  Hirokazu Inoue ,  Kazuji Yamada ,  Kunio Miyazaki ,  Osamu Miura ,  Hideo Arakawa ,  Hiroshi Yokoyama ,  Yoshio Naganuma ,  Atsushi Morihara ,  Katsunori Ouchi

IPC分类号： G06F1/18 ,  H01L21/60 ,  H01L23/057 ,  H01L23/467 ,  H01L23/498 ,  H01L23/50 ,  H01L25/065

CPC分类号： H01L23/467 ,  H01L23/057 ,  H01L23/49822 ,  H01L23/50 ,  H01L24/32 ,  H01L25/0655 ,  H01L2224/16225 ,  H01L2224/32188 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49109 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01025 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/15174 ,  H01L2924/15312 ,  H01L2924/1532 ,  H01L2924/15787 ,  H01L2924/16152 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/30107

摘要： A semiconductor package for use in computers includes a insulating substrate onto which a semiconductor device is mounted, an insulating cap which shuts out outside air and seals said semiconductor device, power-source lines which provide power to the semiconductor device, and signal lines which transmit output signals from the semiconductor device to external circuits. The signal lines are arranged perpendicularly to the insulating substrate so that they are prevented from the dielectric constant of the insulating substrate, while the power-source lines are formed within the insulating substrate and connected through conductive layers parallel to the surface onto which the semiconductor is mounted to external leads.

公开(公告)号：US4670969A

公开(公告)日：1987-06-09

申请号：US694990

申请日：1985-01-25

申请人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

发明人： Kazuji Yamada ,  Yutaka Kobayashi ,  Kanji Kawakami ,  Satoshi Shimada ,  Masanori Tanabe ,  Shigeyuki Kobori

IPC分类号： H01L29/84 ,  G01L9/00 ,  G01P15/08 ,  H01L21/428

CPC分类号： G01L9/0042 ,  G01P15/0802 ,  G01P2015/084 ,  Y10S148/012 ,  Y10S148/159 ,  Y10S148/168 ,  Y10T29/42 ,  Y10T29/49103

摘要： A method of making a silicon diaphragm pressure sensor includes forming an oxide film on one surface of a monocrystalline silicon substrate. A polycrystalline silicon layer is formed on the oxide film. The oxide film may be partly removed before the formation of the polycrystalline silicon layer. The polycrystalline silicon layer is heated and melt to recrystallize the same, thereby converting the polycrystalline silicon layer into a monocrystalline silicon layer. On the monocrystalline silicon layer may be epitaxially grown an additional monocrystalline silicon layer. By using the oxide film as an etching stopper, a predetermined portion of the substrate is etched over a range from the other surface of the substrate to the oxide film, thereby providing a diaphragm of the pressure sensor.

摘要翻译： 制造硅膜压力传感器的方法包括在单晶硅衬底的一个表面上形成氧化膜。 在氧化物膜上形成多晶硅层。 在形成多晶硅层之前可以部分地去除氧化膜。 将多晶硅层加热熔化，使其重结晶，从而将多晶硅层转化为单晶硅层。 在单晶硅层上可以外延生长另外的单晶硅层。 通过使用氧化膜作为蚀刻停止层，在从衬底的另一个表面到氧化膜的范围内蚀刻衬底的预定部分，从而提供压力传感器的隔膜。

公开(公告)号：US4065971A

公开(公告)日：1978-01-03

申请号：US701531

申请日：1976-07-01

申请人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

发明人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

IPC分类号： H01L29/84 ,  G01L9/00 ,  G01L9/06

CPC分类号： G01L9/0054

摘要： A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.

摘要翻译： 半导体压力传感器包括其外边缘固定的单晶半导体膜片。 当经受压力时，换能器在其中心部分产生相反极性的径向应变，并且围绕中心部分的部分靠近应变诱导区域的边缘产生。 隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。 位于彼此靠近的单个组的电阻以桥的形式组合。 形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。 然而，形成桥的相对臂的单独的电阻组的纵向方向在方向上，使得它们不会彼此正交相交。