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    Quantum device utilizing the quantum effect
    11.
    发明授权
    Quantum device utilizing the quantum effect 失效
    使用量子效应的量子器件

    公开(公告)号：US5444267A

    公开(公告)日：1995-08-22

    申请号：US331270

    申请日：1994-10-28

    申请人： Kenji Okada ,  Kiyoshi Morimoto ,  Masaharu Udagawa ,  Koichiro Yuki ,  Masaaki Niwa ,  Yoshihiko Hirai ,  Juro Yasui

    发明人： Kenji Okada ,  Kiyoshi Morimoto ,  Masaharu Udagawa ,  Koichiro Yuki ,  Masaaki Niwa ,  Yoshihiko Hirai ,  Juro Yasui

    IPC分类号： H01L29/06 ,  H01L21/334 ,  H01L29/10 ,  H01L29/68 ,  H01L29/772 ,  H01L29/88 ,  H01L29/161

    CPC分类号： B82Y10/00 ,  B82Y30/00 ,  H01L29/1037 ,  H01L29/66931 ,  H01L29/772 ,  H01L29/882 ,  Y10S438/911 ,  Y10S438/962

    摘要： A quantum device including a plate-like conductor part having a necking portion made by forming a first mask layer having a first strip portion on a conductor substrate; forming a second mask layer having a second strip portion on the conductor substrate; etching a region of the conductor substrate which is not covered with the first and second mask layers, by using the first and second mask layers as an etching mask, to form a plurality of first recess portions on a surface of the conductor substrate; selectively covering side faces of the plurality of first recess portions, and side faces of the first and second mask layers with a side wall film; selectively removing only the second mask layer; etching another region of the conductor substrate which is not covered with the first mask layer and the side wall film, by using the first mask layer and the side wall film as an etching mask, to form a plurality of second recess portions on the surface of the conductor substrate; selectively removing part of another region of the surface of the conductor substrate which is not covered with the first mask layer and the side wall film; and removing the first mask layer and the side wall film, to form the plate-like conductor part having the necking portion.

    摘要翻译： 公开了一种包括具有颈缩部的板状导体部的量子装置及其制造方法。 该方法包括以下步骤：在导体基板上形成具有第一条带部分的第一掩模层; 在所述导体基板上形成具有第二条带部分的第二层; 通过使用第一和第二掩模层作为蚀刻掩模蚀刻未被第一和第二掩模层覆盖的导体基板的区域，以在导体基板的表面上形成多个第一凹部; 选择性地覆盖所述多个第一凹部的侧面，所述第一和第二掩模层的侧面具有侧壁膜; 选择性地除去第二掩模层，第一掩模层和侧壁膜被去除; 通过使用第一掩模层和侧壁膜作为蚀刻来蚀刻未被第一掩模层和侧壁膜覆盖的导体基板的另一区域，以在第一掩模层和侧壁膜的表面上形成多个第二凹部 基体; 选择性地去除未被第一掩模层和侧壁膜覆盖的导体基板的表面的另一区域的一部分; 并且去除第一掩模层和侧壁膜，以在导体基板上形成具有颈缩部分的板状导体部分。

    Method for producing quantization functional device utilizing a resonance tunneling effect
    13.
    发明授权
    Method for producing quantization functional device utilizing a resonance tunneling effect 失效
    利用共振隧道效应产生量化功能装置的方法

    公开(公告)号：US5514614A

    公开(公告)日：1996-05-07

    申请号：US421530

    申请日：1995-04-13

    申请人： Koichiro Yuki ,  Yoshihiko Hirai ,  Koyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

    发明人： Koichiro Yuki ,  Yoshihiko Hirai ,  Koyoshi Morimoto ,  Masaaki Niwa ,  Juro Yasui ,  Kenji Okada ,  Masaharu Udagawa

    IPC分类号： H01L21/329 ,  H01L29/04 ,  H01L29/76 ,  H01L29/88 ,  H01L21/328

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/045 ,  H01L29/66151 ,  H01L29/7606 ,  H01L29/882 ,  Y10S438/962 ,  Y10S438/979

    摘要： By etching, a first groove and a second groove are formed in a silicon substrate. Surfaces of the side walls of these grooves have a surface orientation of (111). The first and second grooves sandwich a silicon thin plate therebetween, which is formed as a part of the silicon substrate. The silicon thin plate is sufficiently thin so as to act as a quantum well. Further, a pair of silicon oxide films acting as tunneling barriers are formed on the surfaces of the side walls of the silicon thin plate, thus forming a double barrier structure. In addition, a pair of polysilicon electrodes are formed and sandwich the double barrier structure. As a result, the structure of a resonance tunneling diode, which utilizes the resonance tunneling effect, is provided. Adding a third electrode to the above structure provides a hot electron transistor. In the quantization functional devices having the above-described configuration, the satisfactory resonance effect is obtained due to a high crystallinity of the quantum well, a high potential barrier brought by the high quality silicon oxide films used as the tunneling barriers and a smooth interface between the quantum well and the tunneling barriers.

    摘要翻译： 通过蚀刻，在硅衬底中形成第一凹槽和第二凹槽。 这些凹槽的侧壁的表面具有（111）的表面取向。 第一和第二沟槽夹在其间的硅薄板，其形成为硅衬底的一部分。 硅薄板足够薄，以作为量子阱。 此外，在硅薄板的侧壁的表面上形成用作隧道势垒的一对氧化硅膜，从而形成双重阻挡结构。 此外，形成一对多晶硅电极并夹着双重阻挡结构。 结果，提供了利用谐振隧穿效应的共振隧道二极管的结构。 向上述结构添加第三电极提供热电子晶体管。 在具有上述结构的量子化功能器件中，由于量子阱的高结晶度，由用作隧道势垒的高质量氧化硅膜引起的高电位势垒和由于量子阱的高结晶度而产生令人满意的共振效应， 量子阱和隧道势垒。

    Method of fabricating a quantum device
    14.
    发明授权
    Method of fabricating a quantum device 失效
    制造量子器件的方法

    公开(公告)号：US5244828A

    公开(公告)日：1993-09-14

    申请号：US934953

    申请日：1992-08-25

    申请人： Kenji Okada ,  Yasuaki Terui ,  Juro Yasui ,  Yoshihiko Hirai ,  Masaaki Niwa ,  Atsuo Wada ,  Kiyoshi Morimoto

    发明人： Kenji Okada ,  Yasuaki Terui ,  Juro Yasui ,  Yoshihiko Hirai ,  Masaaki Niwa ,  Atsuo Wada ,  Kiyoshi Morimoto

    IPC分类号： H01L29/06 ,  H01L21/20 ,  H01L21/335 ,  H01L27/12 ,  H01L29/12

    CPC分类号： B82Y10/00 ,  H01L21/2026 ,  H01L27/1203 ,  H01L29/125 ,  H01L29/127 ,  H01L29/66439 ,  Y10S438/962

    摘要： The method of fabricating a quantum device of the invention includes the steps of: forming a quantum dot having side faces on a first insulating layer; forming a second insulating layer which can function as a tunnel film, on at least the side faces of the quantum dot; depositing a non-crystal semiconductor layer on the first insulating layer so as to cover the quantum dot; removing at least a portion of the non-crystal semiconductor layer which is positioned above the quantum dot; single-crystallizing a predetermined portion of the non-crystal semiconductor layer which is in contact with the second insulating layer; and forming a quantum wire which includes the single-crystallized semiconductor portion and the quantum dot, on the first insulating layer.

    摘要翻译： 制造本发明的量子器件的方法包括以下步骤：在第一绝缘层上形成具有侧面的量子点; 至少在量子点的侧面上形成可用作隧道膜的第二绝缘层; 在第一绝缘层上沉积非晶半导体层以覆盖量子点; 去除位于量子点上方的非晶半导体层的至少一部分; 单晶化与第二绝缘层接触的非晶半导体层的预定部分; 以及在所述第一绝缘层上形成包括所述单结晶半导体部分和所述量子点的量子线。

    Quantum device and fabrication method thereof
    15.
    发明授权
    Quantum device and fabrication method thereof 失效
    量子元件及其制造方法

    公开(公告)号：US5296719A

    公开(公告)日：1994-03-22

    申请号：US915311

    申请日：1992-07-20

    申请人： Yoshihiko Hirai ,  Juro Yasui ,  Yasuaki Terui ,  Kiyoshi Morimoto ,  Atsuo Wada ,  Kenji Okada ,  Shin Hashimoto ,  Shinji Odanaka ,  Masaaki Niwa ,  Kaoru Inoue

    发明人： Yoshihiko Hirai ,  Juro Yasui ,  Yasuaki Terui ,  Kiyoshi Morimoto ,  Atsuo Wada ,  Kenji Okada ,  Shin Hashimoto ,  Shinji Odanaka ,  Masaaki Niwa ,  Kaoru Inoue

    IPC分类号： H01L21/265 ,  H01L21/335 ,  H01L29/12 ,  H01L29/423 ,  H01L29/49 ,  H01L21/308 ,  H01L27/08

    CPC分类号： H01L29/4908 ,  B82Y10/00 ,  H01L21/26586 ,  H01L29/125 ,  H01L29/66439 ,  H01L29/78 ,  Y10S438/962

    摘要： A quantum wire is formed at the top of triangular protrusion of silicon substrate. A quantum wire is isolated from the substrate by silicon oxide layers. A quantum wire is isolated from the substrate by impurity layers of a conduction type different from that of the substrate. An insulator film and a gate electrode are formed at the edge of triangular protrusion of a silicon substrate, and a quantum wire is induced by applying a voltage to the gate electrode. A quantum wire structure is fabricated by forming saw-tooth-like protrusions having (111) side planes by performing anisotropic crystalline etching and by oxidizing the silicon substrate with use of the oxide protection film to remain only around the top of the protrusions unoxidized. In another method, an oxide film is formed except around the top of the protrusions whereby a quantum wire is formed at the unoxidized region. In a different method, impurity layers are formed except around the top of the protrusions by ion implantation.

    摘要翻译： 量子线形成在硅衬底的三角形突起的顶部。 量子线通过氧化硅层与衬底隔离。 通过不同于衬底的导电类型的杂质层将量子线与衬底隔离。 绝缘膜和栅电极形成在硅衬底的三角形突起的边缘处，并且通过向栅电极施加电压来诱导量子线。 通过形成具有（111）侧面的锯齿形突起，通过进行各向异性的结晶蚀刻，并且通过使用氧化物保护膜氧化硅衬底而制成量子线结构，仅保留在未氧化的突起的顶部。 在另一种方法中，除了突起的顶部之外形成氧化物膜，从而在未氧化区域形成量子线。 在不同的方法中，通过离子注入除了突起的顶部之外形成杂质层。

    Resonant electron transfer device
    16.
    发明授权
    Resonant electron transfer device 失效
    共振电子转移装置

    公开(公告)号：US5347140A

    公开(公告)日：1994-09-13

    申请号：US935988

    申请日：1992-08-27

    申请人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Atsuo Wada ,  Kenji Okada ,  Juro Yasui ,  Masaaki Niwa

    发明人： Yoshihiko Hirai ,  Kiyoshi Morimoto ,  Yasuaki Terui ,  Atsuo Wada ,  Kenji Okada ,  Juro Yasui ,  Masaaki Niwa

    IPC分类号： H01L29/768 ,  H01L29/88

    CPC分类号： B82Y30/00 ,  B82Y10/00 ,  H01L29/768

    摘要： A resonant electron transfer device includes a plurality of units each of which has of at least one one-dimensional quantum wire having a quantum well elongated in a direction, a zero-dimensional quantum dot having a base quantization level higher than that of the one-dimensional quantum wire an electrode for controlling respective internal levels of the quantum wire and dot wherein the quantum wire and dot forming one unit is connected via a potential barrier capable of exhibiting a tunnel effect therebetween.

    摘要翻译： 共振电子转移装置包括多个单元，每个单元具有至少一个一维量子线，该量子线具有在一个方向上很长的量子阱，零量子点的基本量化级别高于单向量子线， 尺寸量子线，用于控制量子线和点的各个内部电平的电极，其中量子线和形成一个单元的点通过能够在其间呈现隧道效应的势垒连接。

    In-plane-switching liquid crystal display unit
    17.
    发明授权
    In-plane-switching liquid crystal display unit 有权
    平面切换液晶显示单元

    公开(公告)号：US07495734B2

    公开(公告)日：2009-02-24

    申请号：US11128237

    申请日：2005-05-13

    申请人： Teruaki Suzuki ,  Shinichi Nishida ,  Hideya Murai ,  Masayoshi Suzuki ,  Makoto Watanabe ,  Yoshihiko Hirai

    发明人： Teruaki Suzuki ,  Shinichi Nishida ,  Hideya Murai ,  Masayoshi Suzuki ,  Makoto Watanabe ,  Yoshihiko Hirai

    IPC分类号： G02F1/1343 ,  G02F1/1337

    CPC分类号： G02F1/134363 ,  G02F2001/133757 ,  G02F2201/122

    摘要： An in-plane-switching liquid crystal display unit has a two-dimensional matrix of pixel regions each including a first auxiliary region and a second auxiliary region. When no electric field is applied, liquid crystal molecules in the first and second auxiliary regions are directed in respective orientations that lie at 90° with respect to each other. When a voltage is applied, the liquid crystal molecules are rotated in the same direction while maintaining their orientations in the first and second auxiliary regions at 90° with respect to each other. Alternatively, the liquid crystal molecules in the first and second auxiliary regions are directed in the same orientation when no electric field is applied, and when a voltage is applied, the liquid crystal molecules are rotated 15 opposite directions while maintaining their orientations in symmetric relationship.

    摘要翻译： 平面切换液晶显示单元具有各自包括第一辅助区域和第二辅助区域的像素区域的二维矩阵。 当没有施加电场时，第一和第二辅助区域中的液晶分子相对于彼此成90°的各自的取向。 当施加电压时，液晶分子沿相同的方向旋转，同时保持它们在第一和第二辅助区域中的取向相对于彼此成90°。 或者，当不施加电场时，第一和第二辅助区域中的液晶分子以相同的取向指向，并且当施加电压时，液晶分子沿着相反方向旋转15个方向，同时保持其对称关系的取向。

    In-plane-switching liquid crystal display unit
    19.
    发明申请
    In-plane-switching liquid crystal display unit 有权
    平面切换液晶显示单元

    公开(公告)号：US20050264743A1

    公开(公告)日：2005-12-01

    申请号：US11128237

    申请日：2005-05-13

    申请人： Teruaki Suzuki ,  Shinichi Nishida ,  Hideya Murai ,  Masayoshi Suzuki ,  Makoto Watanabe ,  Yoshihiko Hirai

    发明人： Teruaki Suzuki ,  Shinichi Nishida ,  Hideya Murai ,  Masayoshi Suzuki ,  Makoto Watanabe ,  Yoshihiko Hirai

    IPC分类号： G02F1/1337 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368

    CPC分类号： G02F1/134363 ,  G02F2001/133757 ,  G02F2201/122

    摘要： An in-plane-switching liquid crystal display unit has a two-dimensional matrix of pixel regions each including a first auxiliary region and a second auxiliary region. When no electric field is applied, liquid crystal molecules in the first and second auxiliary regions are directed in respective orientations that lie at 90° with respect to each other. When a voltage is applied, the liquid crystal molecules are rotated in the same direction while maintaining their orientations in the first and second auxiliary regions at 90° with respect to each other. Alternatively, the liquid crystal molecules in the first and second auxiliary regions are directed in the same orientation when no electric field is applied, and when a voltage is applied, the liquid crystal molecules are rotated 15 opposite directions while maintaining their orientations in symmetric relationship.

    摘要翻译： 平面切换液晶显示单元具有各自包括第一辅助区域和第二辅助区域的像素区域的二维矩阵。 当没有施加电场时，第一和第二辅助区域中的液晶分子相对于彼此成90°的各自的取向。 当施加电压时，液晶分子沿相同的方向旋转，同时保持它们在第一和第二辅助区域中的取向相对于彼此成90°。 或者，当不施加电场时，第一和第二辅助区域中的液晶分子以相同的取向指向，并且当施加电压时，液晶分子沿着相反方向旋转15个方向，同时保持其对称关系的取向。