公开(公告)号：US20230282448A1

公开(公告)日：2023-09-07

申请号：US18015708

申请日：2021-07-01

Applicant: Lam Research Corporation

Inventor： Juline Shoeb ,  Tom A. Kamp ,  Alexander Miller Paterson

IPC: H01J37/32 ,  H03H7/38

CPC classification number: H01J37/32146 ,  H01J37/32183 ,  H03H7/38 ,  H01J2237/334

Abstract: Systems and methods for pulsing radio frequency (RF) coils are described. One of the methods includes supplying a first RF signal to a first impedance matching circuit coupled to a first RF coil, supplying a second RF signal to a second impedance matching circuit coupled to a second RF coil, and pulsing the first RF signal between a first parameter level and a second parameter level. The method includes pulsing the second RF signal between a third parameter level and a fourth parameter level in reverse synchronization with the pulsing of the first RF signal.

公开(公告)号：US11710623B2

公开(公告)日：2023-07-25

申请号：US17302622

申请日：2021-05-07

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Freeman

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44 ,  H01L21/683

CPC classification number: H01J37/32862 ,  C23C16/0236 ,  C23C16/4405 ,  C23C16/45544 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/02211 ,  H01L21/31116 ,  H01L21/67069 ,  H01J37/3211 ,  H01J37/32715 ,  H01J2237/186 ,  H01J2237/1825 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01L21/02164 ,  H01L21/6833

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US20210287909A1

公开(公告)日：2021-09-16

申请号：US17200526

申请日：2021-03-12

Applicant: Lam Research Corporation

Inventor： Xiang Zhou ,  Tom A. Kamp ,  Yoshie Kimura ,  Duming Zhang ,  Chen Xu ,  John Drewery ,  Alex Paterson

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: A plasma processing system includes a chamber having a coil disposed above a dielectric window for providing radio frequency power to the processing region. An etch gas delivery system is coupled to gas sources used for a first etch of a material. A liquid delivery system includes a source of liquid precursor, a liquid flow controller, and a vaporizer. A controller activates the etch gas delivery system to perform the first etch and activates the liquid delivery system to perform an atomic layer passivation (ALP) process after the first etch to coat features with a conformal film of passivation. Each time the ALP process is completed a single atomic monolayer of the conformal film of passivation is formed. The controller activates the etch gas delivery system to perform a second etch, with the conformal film of passivation protecting the mask and sidewalls of the features during the second etch.

公开(公告)号：US11031215B2

公开(公告)日：2021-06-08

申请号：US16584095

申请日：2019-09-26

Applicant: Lam Research Corporation

Inventor： John Stephen Drewery ,  Tom A. Kamp ,  Haoquan Yan ,  John Edward Daugherty ,  Ali Sucipto Tan ,  Ming-Kuei Tseng ,  Bruce Edmund Freeman

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  H01L21/67 ,  C23C16/02 ,  C23C16/455 ,  C23C16/44 ,  H01L21/683

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

公开(公告)号：US10163610B2

公开(公告)日：2018-12-25

申请号：US15067068

申请日：2016-03-10

Applicant: Lam Research Corporation

Inventor： Saravanapriyan Sriraman ,  Tom A. Kamp ,  Alexander Paterson

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

Abstract: An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.

公开(公告)号：US20170047224A1

公开(公告)日：2017-02-16

申请号：US14826088

申请日：2015-08-13

Applicant: Lam Research Corporation

Inventor： Tom A. Kamp ,  Rodolfo P. Belen, JR.

IPC: H01L21/033 ,  H01L21/027 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/0338 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144

Abstract: A method for etching an etch layer in a stack over a substrate wherein the etch layer is under a mask layer which is under a patterned organic mask is provided. The stack and substrate is placed on a support in the plasma chamber. A silicon based layer is deposited in situ over the stack. The silicon based layer is etched to form silicon based sidewalls or spacers on sides of the patterned organic mask. The mask layer is selectively etched with respect to the silicon based sidewalls or spacers, wherein the selectively etching the mask layer undercuts the silicon based sidewalls or spacers. The etch layer is selectively etched with respect to the mask layer. The stack and substrate are removed from the support and the plasma chamber.

Abstract translation: 提供了一种在衬底上的堆叠中蚀刻蚀刻层的方法，其中蚀刻层位于图案化有机掩模下方的掩模层下方。 将堆叠和衬底放置在等离子体室中的支撑件上。 硅基层沉积在堆叠上的原位。 蚀刻硅基层以在图案化有机掩模的侧面上形成硅基侧壁或间隔物。 相对于硅基侧壁或间隔物选择性地蚀刻掩模层，其中选择性地蚀刻掩模层将削弱硅基侧壁或间隔物。 相对于掩模层选择性地蚀刻蚀刻层。 从载体和等离子体室移除堆叠和衬底。

公开(公告)号：US20170018411A1

公开(公告)日：2017-01-19

申请号：US15067068

申请日：2016-03-10

Applicant: Lam Research Corporation

Inventor： Saravanapriyan Sriraman ,  Tom A. Kamp ,  Alexander Paterson

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01J37/32697 ,  H01J37/3211 ,  H01J37/32495 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32577 ,  H01J37/32642 ,  H01J37/32715

Abstract: An edge ring assembly for a plasma processing chamber is provided, including: an edge ring configured to surround an electrostatic chuck (ESC) that is configured for electrical connection to a first RF power supply, the ESC having a top surface for supporting a substrate and an annular step surrounding the top surface, the annular step defining an annular shelf that is lower than the top surface; an annular electrode disposed below the edge ring in the annular step and above the annular shelf; a dielectric ring disposed below the annular electrode for isolating the annular electrode from the ESC, the dielectric ring positioned in the annular step over the annular shelf; and, a plurality of insulated connectors disposed through the ESC and through the dielectric ring, each of the plurality of insulated connectors providing electrical connection between a second RF power supply and the annular electrode.

Abstract translation: 提供了一种用于等离子体处理室的边缘环组件，包括：边缘环，其构造成围绕静电卡盘（ESC），所述静电卡盘被配置为电连接到第一RF电源，所述ESC具有用于支撑基板的顶表面， 围绕所述顶表面的环形台阶，所述环形台阶限定出比所述顶表面低的环形搁板; 环形电极，设置在所述环形台阶的下方并位于所述环形搁架的上方; 设置在所述环形电极下方的绝缘环，用于将所述环形电极与所述ESC隔离，所述介电环位于所述环形台架上的所述环形台阶中; 以及多个绝缘连接器，其经由所述ESC并且通过所述介质环设置，所述多个绝缘连接器中的每一个提供第二RF电源和所述环形电极之间的电连接。