公开(公告)号：US20230223238A1

公开(公告)日：2023-07-13

申请号：US17997802

申请日：2021-04-30

Applicant: Lam Research Corporation

Inventor： Tongtong Guo ,  Rachel E. Batzer ,  Huatan Qiu ,  Lee Chen ,  Bo Gong ,  Zhe Gui

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/32357 ,  H01J2237/3321 ,  H01J2237/3323

Abstract: An apparatus for forming a plasma may include one or more coupling ports to accept and RF current. The apparatus may additionally include a receptacle to accommodate one or more gases, in which the receptacle is oriented along a first axis. The apparatus may additionally include an RF coupling structure, oriented in a plane and substantially surrounding the receptacle, the RF coupling structure can be configured to conduct an RF current to bring about formation of the plasma within the receptacle. The apparatus may further include one or more linkages, coupled to the RF coupling structure, which may permit the plane of the RF coupling structure to pivot about a second axis so as to tilt the plane of the RF coupling structure toward the first axis.

公开(公告)号：US11101164B2

公开(公告)日：2021-08-24

申请号：US16820003

申请日：2020-03-16

Applicant: Lam Research Corporation

Inventor： Rachel Batzer ,  Huatan Qiu ,  Bhadri Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC: C23C16/455 ,  H01L21/687 ,  H01L21/67 ,  H01J37/32 ,  C23C16/458 ,  B05C13/02

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US10760158B2

公开(公告)日：2020-09-01

申请号：US15954454

申请日：2018-04-16

Applicant: Lam Research Corporation

Inventor： Damodar Shanbhag ,  Guangbi Yuan ,  Thadeous Bamford ,  Curtis Warren Bailey ,  Tony Kaushal ,  Krishna Birru ,  William Schlosser ,  Bo Gong ,  Fengyuan Lai ,  Leonard Wai Fung Kho ,  Anand Chandrashekar ,  Andrew H. Breninger ,  Chen-Hua Hsu ,  Geoffrey Hohn ,  Gang Liu ,  Rohit Khare ,  Huatan Qiu

IPC: C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/40

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US20180163305A1

公开(公告)日：2018-06-14

申请号：US15378854

申请日：2016-12-14

Applicant: Lam Research Corporation

Inventor： Rachel Batzer ,  Huatan Qiu ,  Bhadri Varadarajan ,  Patrick Girard Breiling ,  Bo Gong ,  Will Schlosser ,  Zhe Gui ,  Taide Tan ,  Geoffrey Hohn

IPC: C23C16/455 ,  C23C16/50 ,  H01L21/02

CPC classification number: C23C16/45565 ,  C23C16/45572 ,  C23C16/505 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32522

Abstract: A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum including an inlet to receive heat transfer fluid and a plurality of flow channels to direct the heat transfer fluid through a center portion of the showerhead to an outlet to control a temperature of the showerhead, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

公开(公告)号：US20180044791A1

公开(公告)日：2018-02-15

申请号：US15794786

申请日：2017-10-26

Applicant: Lam Research Corporation

Inventor： Bhadri N. Varadarajan ,  Bo Gong ,  Rachel E. Batzer ,  Huatan Qiu ,  Bart J. van Schravendijk ,  Geoffrey Hohn

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/458 ,  C23C16/452 ,  C23C16/44 ,  H01J37/32 ,  C23C16/40

CPC classification number: C23C16/45525 ,  C23C16/402 ,  C23C16/4404 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/4581 ,  C23C16/50 ,  H01J37/32357 ,  H01J37/32486

Abstract: Certain embodiments herein relate to an apparatus used for remote plasma processing. In various embodiments, the apparatus includes a reaction chamber that is conditioned by forming a low recombination material coating on interior chamber surfaces. The low recombination material helps minimize the degree of radical recombination that occurs when the reaction chamber is used to process substrates. During processing on substrates, the low recombination material may become covered by relatively higher recombination material (e.g., as a byproduct of the substrate processing), which results in a decrease in the amount of radicals available to process the substrate over time. The low recombination material coating may be reconditioned through exposure to an oxidizing plasma, which acts to reform the low recombination material coating. The reconditioning process may occur periodically as additional processing occurs on substrates. The apparatus may be configured to cause formation and reconditioning of the low recombination material coating.

公开(公告)号：US12230495B2

公开(公告)日：2025-02-18

申请号：US17285814

申请日：2019-10-11

Applicant: Lam Research Corporation

Inventor： James S. Sims ,  Shane Tang ,  Vikrant Rai ,  Andrew McKerrow ,  Huatan Qiu

IPC: H01L21/02 ,  C23C16/455 ,  H01J37/32 ,  H01L21/67

Abstract: A method for depositing a silicon nitride layer on a stack is provided. The method comprises providing an atomic layer deposition, comprising a plurality of cycles, wherein each cycle comprises dosing the stack with a silicon containing precursor by providing a silicon containing precursor gas, providing an N2 plasma conversion, and providing an H2 plasma conversion.

公开(公告)号：US12227837B2

公开(公告)日：2025-02-18

申请号：US17663614

申请日：2022-05-16

Applicant: Lam Research Corporation

Inventor： Damodar Rajaram Shanbhag ,  Guangbi Yuan ,  Thadeous Bamford ,  Curtis Warren Bailey ,  Tony Kaushal ,  Krishna Birru ,  William Schlosser ,  Bo Gong ,  Huatan Qiu ,  Fengyuan Lai ,  Leonard Wai Fung Kho ,  Anand Chandrashekar ,  Andrew H. Breninger ,  Chen-Hua Hsu ,  Geoffrey Hohn ,  Gang Liu ,  Rohit Khare

IPC: C23C16/44 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US11702748B2

公开(公告)日：2023-07-18

申请号：US15449333

申请日：2017-03-03

Applicant: Lam Research Corporation

Inventor： Geoffrey Hohn ,  Huatan Qiu ,  Rachel Batzer ,  Guangbi Yuan ,  Zhe Gui

IPC: C23C16/458 ,  H01L21/687 ,  C23C16/505

CPC classification number: C23C16/4585 ,  C23C16/4581 ,  C23C16/4586 ,  C23C16/505 ,  H01L21/68742 ,  H01L21/68757 ,  H01L21/68785

Abstract: An assembly for use in a process chamber for depositing a film on a wafer. The assembly includes a pedestal having a pedestal top surface extending from a central axis of the pedestal to an outer edge, the pedestal top surface having a plurality of wafer supports for supporting a wafer. A pedestal step having a step surface extending from a step inner diameter towards the outer edge of the pedestal. A focus ring rests on the step surface and having a mesa extending from an outer diameter of the focus ring to a mesa inner diameter. A shelf steps downwards from a mesa surface at the mesa inner diameter, and extends between the mesa inner diameter and an inner diameter of the focus ring. The shelf is configured to support at least a portion of a wafer bottom surface of the wafer at a process temperature.

公开(公告)号：US11365479B2

公开(公告)日：2022-06-21

申请号：US16935760

申请日：2020-07-22

Applicant: Lam Research Corporation

Inventor： Damodar Shanbhag ,  Guangbi Yuan ,  Thadeous Bamford ,  Curtis Warren Bailey ,  Tony Kaushal ,  Krishna Birru ,  William Schlosser ,  Bo Gong ,  Huatan Qiu ,  Fengyuan Lai ,  Leonard Wai Fung Kho ,  Anand Chandrashekar ,  Andrew H. Breninger ,  Chen-Hua Hsu ,  Geoffrey Hohn ,  Gang Liu ,  Rohit Khare

IPC: C23C16/455 ,  C23C16/44 ,  H01J37/32 ,  C23C16/40

Abstract: Forming a protective coating ex situ in an atomic layer deposition process to coat one or more chamber components subsequently installed in a reaction chamber provides a number of benefits over more conventional coating methods such as in situ deposition of an undercoat. In certain cases the protective coating may have a particular composition such as aluminum oxide, aluminum fluoride, aluminum nitride, yttrium oxide, and/or yttrium fluoride. The protective coating may help reduce contamination on wafers processed using the coated chamber component. Further, the protective coating may act to stabilize the processing conditions within the reaction chamber, thereby achieving very stable/uniform processing results over the course of processing many batches of wafers, and minimizing radical loss. Also described are a number of techniques that may be used to restore the protective coating after the coated chamber component is used to process semiconductor wafers.

公开(公告)号：US11004662B2

公开(公告)日：2021-05-11

申请号：US15432314

申请日：2017-02-14

Applicant: Lam Research Corporation

Inventor： Taide Tan ,  Huatan Qiu ,  Ryan Senff

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/458 ,  C23C16/507

Abstract: A system for processing a substrate includes a chamber having a chamber wall that defines a lower chamber portion and an upper chamber wall that defines an upper chamber portion. A showerhead is disposed in the upper chamber portion. A pedestal with a support for the substrate is disposed in the lower chamber portion and oriented below the showerhead, such that a processing region is defined between the support of the pedestal and the showerhead. A spacer is disposed between the showerhead and the lower chamber wall of the lower chamber portion. The spacer is defined by an annular body that includes a vertical component. The annular body also includes a side extension that is disposed outside of the processing region and projects radially away from the vertical component. The annular body includes a groove that is formed in the side extension so as to surround the vertical component of the annular body. A heating element is embedded in the groove of the side extension.