Abstract:
A semiconductor assembly package is provided. The semiconductor package assembly includes a system-on-chip (SOC) package, a memory package and a heat spreader. The SOC package includes a logic die and a first substrate. The logic die has pads on it. The first substrate is electrically connected to the logic die by the pads. The memory package includes a second substrate and a memory die. The second substrate has a top surface and a bottom surface. The memory die is mounted on the top surface of the second substrate and is electrically connected to the second substrate using bonding wires. The heat spreader is disposed between the SOC package and the memory package, wherein the heat spreader is in contact with a back surface of the logic die away from the pads.
Abstract:
A semiconductor device includes a substrate, an electronic component, a cover and a liquid metal. The electronic component is disposed on the substrate. The cover is disposed on the substrate and covers the electronic component. The liquid metal is formed between the cover and the electronic component.
Abstract:
A semiconductor package structure includes a substrate, a bridge structure, a redistribution layer, a first semiconductor component, and a second semiconductor component. The substrate has a wiring structure. The bridge structure is over the substrate. The redistribution layer is over the bridge structure. The first semiconductor component and the second semiconductor component are over the redistribution layer, wherein the first semiconductor component is electrically coupled to the second semiconductor component through the redistribution layer and the bridge structure.
Abstract:
A semiconductor package structure includes a semiconductor die, a redistribution layer (RDL) structure, a protective insulating layer, and a conductive structure. The semiconductor die has a first surface, a second surface opposite the first surface, and a third surface adjoined between the first surface and the second surface. The RDL structure is on the first surface of the semiconductor die and is electrically coupled to the semiconductor die. The protective insulating layer covers the RDL structure, the second surface and the third surface of the semiconductor die. The conductive structure passes through the protective insulating layer and is electrically coupled to the RDL structure.
Abstract:
A package substrate is provided. The package substrate includes a dielectric layer and a passive component embedded in the dielectric layer and contacting the dielectric layer. A circuit layer is embedded in the dielectric layer and has a first surface aligned with a second surface of the dielectric layer. A conductive structure is embedded in the dielectric layer and electrically connected to the passive component and the circuit layer. A chip package is also provided.
Abstract:
A chip package includes a patterned conducting plate having a plurality of conducting sections electrically separated from each other, a plurality of conducting pads disposed on an upper surface of the patterned conducting plate, wherein a recess extending from a surface of one of the conducting pads towards an inner portion of the corresponding one of the conducting pads, a chip disposed on the conducting pads, a plurality of conducting bumps disposed on a lower surface of the patterned conducting plate, wherein each of the conducting bumps is electrically connected to a corresponding one of the conducting sections of the patterned conducting plate, and an insulating support layer partially surrounding the conducting bumps.
Abstract:
A semiconductor package with reduced warpage problem is provided, including: a circuit board, having opposing first and second surfaces; a semiconductor chip, formed over a center portion of the first surface of the circuit board, having a first cross sectional dimension; a spacer, formed over a center portion of the semiconductor chip, having a second cross sectional dimension less than that of the first cross sectional dimension; an encapsulant layer, formed over the circuit board, covering the semiconductor chip and surrounding the spacer; a heat spreading layer, formed over the encapsulant layer and the spacer; and a plurality of solder balls, formed over the second surface of the circuit board, wherein a ratio between the first cross sectional dimension and the second cross sectional dimension is about 1:2-1:6.
Abstract:
A semiconductor package structure includes a first redistribution layer, a second redistribution layer, a first semiconductor die, a second semiconductor die, an adhesive layer, and a molding material. The second redistribution layer is disposed over the first redistribution layer. The first semiconductor die and the second semiconductor die are stacked vertically between the first redistribution layer and the second redistribution layer. The first semiconductor die is electrically coupled to the first redistribution layer, and the second semiconductor die is electrically coupled to the second redistribution layer. The adhesive layer extends between the first semiconductor die and the second semiconductor die. The molding material surrounds the first semiconductor die, the adhesive layer, and the second semiconductor die.
Abstract:
A semiconductor package includes an interposer over a substrate that includes interconnect traces, a redistribution structure on the interposer, a first semiconductor structure, a second semiconductor structure and a third semiconductor structure on the redistribution structure. The first semiconductor structure includes a first semiconductor die and a first encapsulant that encapsulates the first semiconductor die. The second semiconductor structure includes a second semiconductor die and a second encapsulant that encapsulates the second semiconductor die. The third semiconductor structure is disposed adjacent to a corner or an edge of the substrate in a top plan view of the substrate. The third semiconductor structure includes a third semiconductor die and a third encapsulant that encapsulates the third semiconductor die. The third semiconductor structure is electrically insulated from the substrate, the first semiconductor structure and the second semiconductor structure.
Abstract:
A semiconductor package structure includes a package substrate, a semiconductor die, an interposer, an adhesive layer, and a molding material. The semiconductor die is disposed over the package substrate. The interposer is disposed over the semiconductor die. The adhesive layer connects the semiconductor die and the interposer. The molding material surrounds the semiconductor die and the adhesive layer.