SYSTEM AND METHOD FOR ADAPTIVE THERMAL ANALYSIS
    5.
    发明申请
    SYSTEM AND METHOD FOR ADAPTIVE THERMAL ANALYSIS 审中-公开
    用于自适应热分析的系统和方法

    公开(公告)号:US20160153922A1

    公开(公告)日:2016-06-02

    申请号:US14951698

    申请日:2015-11-25

    Applicant: MediaTek Inc.

    Abstract: A computer system and a method for adaptive thermal resistance-capacitance (RC) network analysis of a semiconductor device for use in a portable device are provided. The method includes the steps of: receiving a device input file and a plurality of specific effective heat transfer coefficients (HTCs) associated with the portable device; repeatedly performing a thermal analysis of the portable device based on the device input file and a current effective HTC to estimate a target die temperature of the semiconductor device; calculating a target effective HTC based on the device input file and the target die temperature; and updating the current effective HTC with the target effective HTC; and generating an output file recording the target die temperature of the semiconductor device.

    Abstract translation: 提供了一种用于便携式设备的半导体器件的计算机系统和用于自适应热电阻 - 电容(RC)网络分析的方法。 该方法包括以下步骤:接收与便携式设备相关联的设备输入文件和多个特定有效传热系数(HTC); 基于设备输入文件和当前有效HTC重复执行便携式设备的热分析以估计半导体器件的目标管芯温度; 基于设备输入文件和目标模具温度计算目标有效HTC; 并用目标有效HTC更新当前有效的HTC; 以及生成记录半导体器件的目标管芯温度的输出文件。

    SEMICONDUCTOR PACKAGE STRUCTURE
    7.
    发明申请

    公开(公告)号:US20220223512A1

    公开(公告)日:2022-07-14

    申请号:US17546191

    申请日:2021-12-09

    Applicant: MEDIATEK INC.

    Abstract: A semiconductor package structure includes a frontside redistribution layer, a first semiconductor die, a first capacitor, a conductive terminal, and a backside redistribution layer. The first semiconductor die is disposed over the frontside redistribution layer. The first capacitor is disposed over the frontside redistribution layer and electrically coupled to the first semiconductor die. The conductive terminal is disposed below the frontside redistribution layer and electrically coupled to the frontside redistribution layer. The backside redistribution layer is disposed over the first semiconductor die.

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