公开(公告)号：US20070059502A1

公开(公告)日：2007-03-15

申请号：US11511869

申请日：2006-08-29

申请人： Rongjun Wang ,  Hua Chung ,  Xianmin Tang ,  Jenn Wang ,  Wei Wang ,  Yoichiro Tanaka ,  Jick Yu ,  Praburam Gopalraja

发明人： Rongjun Wang ,  Hua Chung ,  Xianmin Tang ,  Jenn Wang ,  Wei Wang ,  Yoichiro Tanaka ,  Jick Yu ,  Praburam Gopalraja

IPC分类号： B32B7/00 ,  B32B3/00 ,  C23C16/00 ,  B05D5/12 ,  C23C14/00

CPC分类号： C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/485 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10T428/24917 ,  Y10T428/24926 ,  H01L2924/00

摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.

摘要翻译： 用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。 一个实施方案包括通过电介质层的孔，RuTaN的阻挡层，RuTa的粘附层和形成铜电镀衬垫的铜籽晶层。 钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。 阻挡层和粘附层可以被溅射沉积。 其他铂族元素代替钌和其他难熔金属代替钽。 当退火时铝合金化成RuTa呈现防潮层。 铜触点包括RuTa的不同合金分数，以将功函数转移到掺杂类型。

公开(公告)号：US20160035937A1

公开(公告)日：2016-02-04

申请号：US14884251

申请日：2015-10-15

申请人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

发明人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC分类号： H01L33/12 ,  H01L29/20 ,  H01L33/00 ,  H01L31/18

CPC分类号： H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。

公开(公告)号：US09087679B2

公开(公告)日：2015-07-21

申请号：US13365876

申请日：2012-02-03

申请人： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

发明人： Muhammad M. Rasheed ,  Rongjun Wang ,  Thanh X. Nguyen ,  Alan A. Ritchie

IPC分类号： C23C14/34 ,  H01J37/34 ,  H01J37/32

CPC分类号： H01J37/34 ,  H01J37/32082 ,  H01J37/3441

摘要： Embodiments of the invention generally relate to a grounding kit for a semiconductor processing chamber, and a semiconductor processing chamber having a grounding kit. More specifically, embodiments described herein relate to a grounding kit which creates an asymmetric grounding path selected to significantly reduce the asymmetries caused by an off center RF power delivery.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的接地套件和具有接地套件的半导体处理室。 更具体地说，本文描述的实施例涉及一种接地套件，该接地套件产生一个非对称接地路径，该非接地套件被选择以显着地减少由偏心的RF功率输送引起的

公开(公告)号：US20140264363A1

公开(公告)日：2014-09-18

申请号：US13947857

申请日：2013-07-22

申请人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

发明人： Mingwei Zhu ,  Nag B. Patibandla ,  Rongjun Wang ,  Daniel Lee Diehl ,  Vivek Agrawal ,  Anantha Subramani

IPC分类号： H01L33/00 ,  H01L31/18 ,  H01J37/34 ,  H01L29/20

CPC分类号： H01L33/12 ,  H01J37/32467 ,  H01J37/32724 ,  H01J37/3405 ,  H01J37/347 ,  H01L29/2003 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0075 ,  Y02E10/544

摘要： Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

摘要翻译： 描述了用于GaN基光电子和电子器件的氧控PVD PVD缓冲器。 还描述了以氧控制方式形成GaN基光电子和电子器件的PVD AlN缓冲液的方法。 在一个示例中，形成用于GaN基光电子或电子器件的氮化铝（AlN）缓冲层的方法包括在衬底上方的AlN层的反应溅射，所述反应性溅射涉及使物理气相沉积 （PVD）室，其含有含氮气体或基于含氮气体的等离子体。 该方法还包括将氧气掺入到AlN层中。

公开(公告)号：US08557094B2

公开(公告)日：2013-10-15

申请号：US11689720

申请日：2007-03-22

申请人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

发明人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Tza-Jing Gung ,  Praburam Gopalraja ,  Jick Yu ,  Hong Yang

IPC分类号： C23C14/34

CPC分类号： C23C14/0641 ,  C23C14/345 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.

摘要翻译： 一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。 源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。 通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。 它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。 集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

公开(公告)号：US20110036709A1

公开(公告)日：2011-02-17

申请号：US12850312

申请日：2010-08-04

申请人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

发明人： Lara Hawrylchak ,  Kirankumar Savandaiah ,  Muhammad M. Rasheed ,  Rongjun Wang ,  Adolph Miller Allen ,  Zhigang Xie

IPC分类号： C23C14/34

CPC分类号： H01L21/67017 ,  C23C14/34 ,  C23C14/564 ,  H01J37/3408 ,  H01J37/3447

摘要： Embodiments of the invention generally relate to a process kit for a semiconductor processing chamber, and a semiconductor processing chamber having a kit. More specifically, embodiments described herein relate to a process kit including a cover ring, a shield, and an isolator for use in a physical deposition chamber. The components of the process kit work alone and in combination to significantly reduce particle generation and stray plasmas. In comparison with existing multiple part shields, which provide an extended RF return path contributing to RF harmonics causing stray plasma outside the process cavity, the components of the process kit reduce the RF return path thus providing improved plasma containment in the interior processing region.

摘要翻译： 本发明的实施例一般涉及用于半导体处理室的处理套件和具有套件的半导体处理室。 更具体地，本文所述的实施例涉及包括用于物理沉积室中的盖环，屏蔽和隔离器的处理套件。 过程组件的组件单独工作并组合起来，以显着减少颗粒产生和杂散等离子体。 与现有的多部分屏蔽相比，其提供了有助于RF谐波的扩展的RF返回路径，从而在处理空腔之外引起杂散等离子体，处理套件的部件降低了RF返回路径，从而在内部处理区域中提供了改进的等离子体容纳物。

公开(公告)号：US07737028B2

公开(公告)日：2010-06-15

申请号：US12240822

申请日：2008-09-29

申请人： Rongjun Wang ,  Hua Chung ,  Jick M. Yu ,  Praburam Gopalraja

发明人： Rongjun Wang ,  Hua Chung ,  Jick M. Yu ,  Praburam Gopalraja

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/28562 ,  C23C16/04 ,  C23C16/18 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76868 ,  H01L21/76871 ,  H01L2221/1089

摘要： Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method for forming layers on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a copper-containing surface and a dielectric surface, exposing the substrate to a ruthenium precursor to selectively form a ruthenium-containing film over the copper-containing surface while leaving exposed the dielectric surface, and depositing a copper bulk layer over the ruthenium-containing film.

摘要翻译： 本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成含钌膜的方法。 此后，可以将铜本体层沉积在含钌膜上。 在一个实施例中，提供了一种用于在衬底上形成层的方法，其包括将衬底定位在处理室内，其中衬底包含含铜表面和电介质表面，将衬底暴露于钌前体以选择性地形成钌 同时留下电介质表面，并在含钌膜上沉积铜体积层。

公开(公告)号：US07659204B2

公开(公告)日：2010-02-09

申请号：US11691302

申请日：2007-03-26

申请人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Praburam Gopalraja ,  Jick M. Yu ,  Jenn Yue Wang

发明人： Xianmin Tang ,  Hua Chung ,  Rongjun Wang ,  Praburam Gopalraja ,  Jick M. Yu ,  Jenn Yue Wang

IPC分类号： H01L21/44

CPC分类号： C23C14/046 ,  C23C14/0036 ,  C23C14/0641 ,  C23C14/083 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76868 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.

摘要翻译： 在多层金属化中通过介电层在通孔或其它垂直互连结构中形成基于钌钽的阻挡层的方法和所得产物。 可能形成不连续岛的RuTa / RuTaN双层中的RuTa层优选在氧等离子体中被有效氧化，从而桥接岛之间的间隙。 或者，通过在氧气存在下通过等离子体溅射RuTa靶，氧化钌钽氧化物反应性溅射到RuTaN上或直接沉积到下面的电介质上。

公开(公告)号：US20090215264A1

公开(公告)日：2009-08-27

申请号：US12037578

申请日：2008-02-26

申请人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

发明人： Jick M. Yu ,  Wei D. Wang ,  Rongjun Wang ,  Hua Chung

IPC分类号： H01L21/44

CPC分类号： H01L21/76879 ,  C25D5/02 ,  H01L21/76856 ,  H01L21/76859 ,  H01L21/76862 ,  H01L21/76873

摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.

摘要翻译： 提供了在电镀工艺中控制金属在基片的场区上沉积的方法。 在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。 场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。 在另一方面，可以使用可以是金属的电阻层来代替电介质。 在另一方面，导电场区域的表面被修改以相对于开口的侧壁和底部改变其化学势。

公开(公告)号：US20080032041A1

公开(公告)日：2008-02-07

申请号：US11773302

申请日：2007-07-03

申请人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

发明人： Christophe Marcadal ,  Rongjun Wang ,  Hua Chung ,  Nirmalya Maity

IPC分类号： B05D5/12

CPC分类号： H01L29/495 ,  C23C16/18 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/28079 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76864 ,  H01L29/4958 ,  H01L29/517

摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.

摘要翻译： 在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽 前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。 该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。 随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。 钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。