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    Metadata containers with indirect pointers
    16.
    发明授权
    Metadata containers with indirect pointers 有权
    具有间接指针的元数据容器

    公开(公告)号：US09547586B2

    公开(公告)日：2017-01-17

    申请号：US13939948

    申请日：2013-07-11

    Applicant: Macronix International Co., Ltd.

    Inventor： Hung-Sheng Chang ,  Cheng-Yuan Wang ,  Hsiang-Pang Li ,  Yuan-Hao Chang ,  Pi-Cheng Hsiu ,  Tei-Wei Kuo

    IPC: G06F12/00 ,  G06F12/02 ,  G06F12/10

    CPC classification number: G06F12/0238 ,  G06F12/0246 ,  G06F12/109 ,  G06F2212/1032 ,  G06F2212/7204 ,  G06F2212/7211

    Abstract: A method is provided for managing a file system including data objects. The data objects, indirect pointers and source pointers are stored in containers that have addresses and include addressable units of a memory. The objects are mapped to addresses for corresponding containers. The indirect pointer in a particular container points to the address of a container in which the corresponding object is stored. The source pointer in the particular container points to the address of the container to which the object in the particular container is mapped. An object in a first container is moved to a second container. The source pointer in the first container is used to find a third container to which the object is mapped. The indirect pointer in the third container is updated to point to the second container. The source pointer in the second container is updated to point to the third container.

    Abstract translation: 提供了一种用于管理包括数据对象的文件系统的方法。 数据对象，间接指针和源指针存储在具有地址并包含存储器可寻址单元的容器中。 对象映射到相应容器的地址。 特定容器中的间接指针指向存储相应对象的容器的地址。 特定容器中的源指针指向特定容器中的对象映射到的容器的地址。 将第一容器中的物体移动到第二容器。 第一个容器中的源指针用于查找对象映射到的第三个容器。 第三个容器中的间接指针被更新为指向第二个容器。 第二个容器中的源指针被更新为指向第三个容器。

    Memory management based on usage specifications
    17.
    发明授权
    Memory management based on usage specifications 有权
    基于使用规范的内存管理

    公开(公告)号：US09513815B2

    公开(公告)日：2016-12-06

    申请号：US14523006

    申请日：2014-10-24

    Applicant: Macronix International Co., Ltd.

    Inventor： Ping-Chun Chang ,  Yuan-Hao Chang ,  Hung-Sheng Chang ,  Tei-Wei Kuo ,  Hsiang-Pang Li

    IPC: G06F12/02 ,  G06F3/06

    CPC classification number: G06F3/061 ,  G06F3/064 ,  G06F3/0644 ,  G06F3/0679 ,  G06F12/023 ,  G06F12/0238 ,  G06F12/0292 ,  G06F2212/1024 ,  G06F2212/202 ,  G06F2212/214 ,  G06F2212/7201

    Abstract: A method is provided for managing a memory device including a plurality of physical memory segments. A logical memory space is classified into a plurality of classifications based on usage specifications. The plurality of physical memory segments is allocated to corresponding logical addresses based on the plurality of classifications, and on usage statistics of the physical memory segments. A data structure is maintained recording translation between logical addresses in the logical memory space and physical addresses of the physical memory segments. The plurality of classifications includes a first classification and a second classification having different usage statistic requirements than the first classification. Logical addresses having the second classification can be redirected to physical segments allocated to logical addresses having the first classification, and the data structure can be updated to record redirected logical addresses. A free command can release a physical memory segment allocated for main memory use.

    Abstract translation: 提供了一种用于管理包括多个物理存储器段的存储器件的方法。 逻辑存储器空间根据使用规范被分类为多个分类。 基于多个分类，以及物理存储器段的使用统计，将多个物理存储器段分配给相应的逻辑地址。 数据结构保持在逻辑存储器空间中的逻辑地址和物理存储器段的物理地址之间进行记录转换。 多个分类包括与第一分类不同的使用统计要求的第一分类和第二分类。 具有第二分类的逻辑地址可以被重定向到分配给具有第一分类的逻辑地址的物理段，并且可以更新数据结构以记录重定向的逻辑地址。 免费命令可以释放分配给主内存使用的物理内存段。

    MEMORY ORPRATING METHOD AND MEMORY DEVICE USING THE SAME
    19.
    发明申请
    MEMORY ORPRATING METHOD AND MEMORY DEVICE USING THE SAME 有权
    使用该存储器的记录方法和存储器件

    公开(公告)号：US20160147464A1

    公开(公告)日：2016-05-26

    申请号：US14805498

    申请日：2015-07-22

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Yu-Ming Chang ,  Yung-Chun Li ,  Hsiang-Pang Li ,  Yuan-Hao Chang ,  Tei-Wei Kuo

    IPC: G06F3/06

    CPC classification number: G06F12/00 ,  G06F12/0246 ,  G06F2212/7202 ,  G06F2212/7209 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C2211/5641 ,  G11C2211/5648

    Abstract: An operating method for a memory, the memory comprising at least one memory block including a plurality of first pages and a plurality of second pages corresponding to the first pages, the operating method including the following steps: determining whether a target first page of the first pages is valid, wherein the target first page is corresponding to a target second page of the second pages; if the target first page is valid, performing first type programming on the target second page; if the target first page is invalid, performing second type programming on the target second page.

    Abstract translation: 一种用于存储器的操作方法，所述存储器包括至少一个存储块，所述至少一个存储块包括与所述第一页对应的多个第一页和多个第二页，所述操作方法包括以下步骤：确定所述第一页的目标第一页 页面是有效的，其中目标第一页面对应于第二页面的目标第二页面; 如果目标第一页有效，则在目标第二页上执行第一类型编程; 如果目标第一页无效，则在目标第二页上执行第二类型编程。

    Method and apparatus of measuring error correction data for memory
    20.
    发明授权
    Method and apparatus of measuring error correction data for memory 有权
    测量存储器误差校正数据的方法和装置

    公开(公告)号：US09299459B2

    公开(公告)日：2016-03-29

    申请号：US13866834

    申请日：2013-04-19

    Applicant: Macronix International Co., Ltd.

    Inventor： Kin-Chu Ho ,  Hsiang-Pang Li ,  Hsie-Chia Chang

    IPC: G11C29/00 ,  G11C29/50 ,  G11C11/56 ,  G11C29/02 ,  G11C29/42 ,  G06F11/10

    CPC classification number: G11C29/50004 ,  G06F11/1048 ,  G11C11/5642 ,  G11C29/021 ,  G11C29/028 ,  G11C29/42

    Abstract: Multiple measurements are made with one memory sense operation having a first word line sensing voltage on a memory cell. The multiple measurements include a first measurement, of whether the memory cell stores either: (a) data corresponding to a first set of one or more threshold voltage ranges below the first word line sensing voltage of the one memory sense operation, or (b) data corresponding to a second set of one or more threshold voltage ranges above the first word line sensing voltage of the one memory sense operation. The multiple measurements include a second measurement, of error correction data of the memory cell indicating relative position within a particular threshold voltage range of a stored threshold voltage in the memory cell.

    Abstract translation: 通过在存储器单元上具有第一字线感测电压的一个存储器感测操作进行多次测量。 多个测量包括第一测量，存储单元是否存储：（a）与一个存储器感测操作的第一字线感测电压之下的一个或多个阈值电压范围的第一组对应的数据，或（b） 数据对应于在一个存储器感测操作的第一字线感测电压之上的一个或多个阈值电压范围的第二组。 所述多个测量包括第二测量，所述存储器单元的误差校正数据指示所述存储器单元中存储的阈值电压的特定阈值电压范围内的相对位置。

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