公开(公告)号：US07825038B2

公开(公告)日：2010-11-02

申请号：US11754440

申请日：2007-05-29

申请人： Nitin K. Ingle ,  Zheng Yuan ,  Paul Gee ,  Kedar Sapre

发明人： Nitin K. Ingle ,  Zheng Yuan ,  Paul Gee ,  Kedar Sapre

IPC分类号： H01L21/31

CPC分类号： C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/31612

摘要： Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

摘要翻译： 描述了在衬底上沉积氧化硅层的方法。 所述方法可以包括以下步骤：向沉积室提供衬底，在沉积室外产生原子氧前体，以及将原子氧前体引入室中。 所述方法还可以包括将硅前体引入沉积室，其中硅前体和原子氧前体首先在室中混合。 硅前体和原子氧前体反应以在衬底上形成氧化硅层，并且沉积的氧化硅层可以退火。 还描述了在衬底上沉积氧化硅层的系统。

公开(公告)号：US20080311754A1

公开(公告)日：2008-12-18

申请号：US12137372

申请日：2008-06-11

申请人： BALAJI CHANDRASEKARAN ,  Douglas E. Manning ,  Nitin K. Ingle ,  Rong Pan ,  Zheng Yuan ,  Sidharth Bhatia

发明人： BALAJI CHANDRASEKARAN ,  Douglas E. Manning ,  Nitin K. Ingle ,  Rong Pan ,  Zheng Yuan ,  Sidharth Bhatia

IPC分类号： H01L21/311 ,  H01L21/31

CPC分类号： H01L21/02164 ,  C23C16/042 ,  C23C16/402 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/28132 ,  H01L21/31604

摘要： A method of improving pattern loading in a deposition of a silicon oxide film is described. The method may include providing a deposition substrate to a deposition chamber, and adjusting a temperature of the deposition substrate to about 250° C. to about 325° C. An ozone containing gas may be introduced to the deposition chamber at a first flow rate of about 1.5 slm to about 3 slm, where the ozone concentration in the gas is about 6% to about 12%, by wt. TEOS may also be introduced to the deposition chamber at a second flow rate of about 2500 mgm to about 4500 mgm. The deposition rate of the silicon oxide film is controlled by a reaction rate of a reaction of the ozone and TEOS at a deposition surface of the substrate.

摘要翻译： 描述了在氧化硅膜沉积中改进图案加载的方法。 该方法可以包括向沉积室提供沉积衬底，以及将沉积衬底的温度调节到约250℃至约325℃。含臭氧气体可以以第一流速 约1.5slm至约3slm，其中气体中的臭氧浓度为约6重量％至约12重量％。 TEOS还可以以约2500mgm至约4500mgm的第二流速引入沉积室。 氧化硅膜的沉积速率由基板的沉积表面处的臭氧与TEOS的反应的反应速率控制。

公开(公告)号：US20080311753A1

公开(公告)日：2008-12-18

申请号：US12136931

申请日：2008-06-11

申请人： Yi Zheng ,  Sasha J. Kweskin ,  Kedar Sapre ,  Nitin K. Ingle ,  Zheng Yuan

发明人： Yi Zheng ,  Sasha J. Kweskin ,  Kedar Sapre ,  Nitin K. Ingle ,  Zheng Yuan

IPC分类号： H01L21/311

CPC分类号： H01L21/02126 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/28132 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/3146 ,  H01L21/31604

摘要： A method of forming and removing a sacrificial oxide layer is described. The method includes forming a step on a substrate, where the step has a top and sidewalls. The method may also include forming the sacrificial oxide layer around the step by chemical vapor deposition of molecular oxygen and TEOS, where the oxide layer is formed on the top and sidewalls of the step. The method may also include removing a top portion of the oxide layer and the step; removing a portion of the substrate exposed by the removal of the step to form a etched substrate; and removing the entire sacrificial oxide layer from the etched substrate.

摘要翻译： 描述了形成和去除牺牲氧化物层的方法。 该方法包括在衬底上形成台阶，其中台阶具有顶部和侧壁。 该方法还可以包括通过分子氧和TEOS的化学气相沉积在步骤周围形成牺牲氧化物层，其中氧化物层形成在台阶的顶部和侧壁上。 该方法还可以包括去除氧化物层的顶部和步骤; 通过去除步骤去除暴露的基板的一部分以形成蚀刻的基板; 并从蚀刻的衬底去除整个牺牲氧化物层。

公开(公告)号：US20110151676A1

公开(公告)日：2011-06-23

申请号：US13039724

申请日：2011-03-03

申请人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

发明人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

IPC分类号： H01L21/31

CPC分类号： H01L21/67253 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76232

摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

摘要翻译： 一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。 第一电介质层形成在特征上并且在至少一个空间内。 第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。 第一固体产物被分解以基本上除去第一介电层的部分。 形成第二电介质层以基本上填充至少一个空间。

公开(公告)号：US07674684B2

公开(公告)日：2010-03-09

申请号：US12178051

申请日：2008-07-23

申请人： Jing Tang ,  Nitin K. Ingle ,  Zheng Yuan ,  Rossella Mininni

发明人： Jing Tang ,  Nitin K. Ingle ,  Zheng Yuan ,  Rossella Mininni

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.

摘要翻译： 提供了一种通过电介质材料释放在半导体衬底上的特征的应力累积的沉积方法。 该功能包括由间隙隔开的线。 该方法包括在腔室中的半导体衬底上的特征上形成衬垫层。 衬垫层在特征上的应力被释放，以显着减少特征线的弯曲。 电介质膜沉积在应力释放衬垫层上，以基本上填充特征的间隙。

公开(公告)号：US20100022067A1

公开(公告)日：2010-01-28

申请号：US12178051

申请日：2008-07-23

申请人： Jing Tang ,  Nitin K. Ingle ,  Zheng Yuan ,  Rossella Mininni

发明人： Jing Tang ,  Nitin K. Ingle ,  Zheng Yuan ,  Rossella Mininni

IPC分类号： H01L21/762

CPC分类号： H01L21/76224

摘要： A deposition method for releasing a stress buildup of a feature over a semiconductor substrate with dielectric material is provided. The feature includes lines separated by a gap. The method includes forming a liner layer over the feature on the semiconductor substrate in a chamber. A stress of the liner layer over the feature is released to substantially reduce bending of the lines of the feature. A dielectric film is deposited over the stress-released liner layer to substantially fill the gap of the feature.

摘要翻译： 提供了一种通过电介质材料释放在半导体衬底上的特征的应力累积的沉积方法。 该功能包括由间隙隔开的线。 该方法包括在腔室中的半导体衬底上的特征上形成衬垫层。 衬垫层在特征上的应力被释放，以显着减少特征线的弯曲。 电介质膜沉积在应力释放衬垫层上，以基本上填充特征的间隙。

公开(公告)号：US07642171B2

公开(公告)日：2010-01-05

申请号：US10990002

申请日：2004-11-16

申请人： Nitin K. Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali J. L. Forstner ,  Rong Pan

发明人： Nitin K. Ingle ,  Zheng Yuan ,  Vikash Banthia ,  Xinyun Xia ,  Hali J. L. Forstner ,  Rong Pan

IPC分类号： H01L21/76

CPC分类号： H01L21/324 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/67115 ,  H01L21/76224 ,  H01L21/76283

摘要： A method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 200° C. to about 800° C. in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800° C. to about 1400° C. in a second atmosphere lacking oxygen. In addition, a method of annealing a substrate comprising a trench containing a dielectric material, the method including annealing the substrate at a first temperature of about 400° C. to about 800° C. in the presence of an oxygen containing gas, purging the oxygen containing gas away from the substrate, and raising the substrate to a second temperature from about 900° C. to about 1100° C. to further anneal the substrate in an atmosphere that lacks oxygen.

摘要翻译： 一种退火包括含有电介质材料的沟槽的衬底的方法，所述方法包括在包含含氧气体的第一气氛中在大约200℃至大约800℃的第一温度下对衬底退火，以及退火衬底 在约800℃至约1400℃的第二温度下在不含氧气的第二气氛中。 另外，包括含有电介质材料的沟槽的衬底的退火方法，该方法包括在含氧气体存在下，在约400℃至约800℃的第一温度下退火衬底， 含氧气体离开衬底，并将衬底升高至约900℃至约1100℃的第二温度，以在缺氧的气氛中进一步对衬底进行退火。

公开(公告)号：US20080182382A1

公开(公告)日：2008-07-31

申请号：US11947674

申请日：2007-11-29

申请人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

发明人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

IPC分类号： H01L21/762

CPC分类号： H01L21/67253 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76232

摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

摘要翻译： 一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。 第一电介质层形成在特征上并且在至少一个空间内。 第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。 第一固体产物被分解以基本上除去第一介电层的部分。 形成第二电介质层以基本上填充至少一个空间。

公开(公告)号：US06544345B1

公开(公告)日：2003-04-08

申请号：US09615035

申请日：2000-07-12

申请人： Bruce E. Mayer ,  Robert H. Chatham, III ,  Nitin K. Ingle ,  Zheng Yuan

发明人： Bruce E. Mayer ,  Robert H. Chatham, III ,  Nitin K. Ingle ,  Zheng Yuan

IPC分类号： B08B704

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

摘要： An in-situ, two step or combination, method and system for cleaning of semiconductor manufacturing equipment is provided. The present invention utilizes two separate fluorine based chemistries in each step which selectively target the removal of different types of deposits that build up on the equipment surfaces. In particular, powdery and dense film-like solid deposits, as well as a combination of both, build up on the chamber surfaces and associated equipment components. These two types of deposits are removed selectively by the present invention. Such selective targeting of combined cleaning steps, yields an improved cleaning technique. In another embodiment, the method and system of the present invention provides for cleaning of the chamber and associated equipment using separate steps with different chemicals, and then performing these steps in a variety of desired sequences.

摘要翻译： 提供了现场，两步或组合，半导体制造设备的清洁方法和系统。 本发明在每个步骤中使用两个单独的基于氟的化学物质，其选择性地靶向在设备表面上积累的不同类型的沉积物的去除。 特别地，粉末和致密的膜状固体沉积物以及两者的组合积聚在室表面和相关的设备部件上。 这两种沉积物通过本发明有选择地被去除。 组合清洁步骤的这种选择性靶向产生改进的清洁技术。 在另一个实施方案中，本发明的方法和系统提供了使用具有不同化学物质的分离步骤清洁腔室和相关设备，然后以各种期望的顺序执行这些步骤。

公开(公告)号：US08808563B2

公开(公告)日：2014-08-19

申请号：US13439079

申请日：2012-04-04

申请人： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

发明人： Anchuan Wang ,  Jingchun Zhang ,  Nitin K. Ingle ,  Young S. Lee

IPC分类号： B44C1/22 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/3213

CPC分类号： H01L21/3065 ,  H01J37/32357 ,  H01L21/3081 ,  H01L21/32137

摘要： Methods of etching exposed silicon on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and a hydrogen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon while very slowly removing other exposed materials. The silicon selectivity results, in part, from a preponderance of hydrogen-containing precursor in the remote plasma which hydrogen terminates surfaces on the patterned heterogeneous structures. A much lower flow of the fluorine-containing precursor progressively substitutes fluorine for hydrogen on the hydrogen-terminated silicon thereby selectively removing silicon from exposed regions of silicon. The methods may be used to selectively remove silicon far faster than silicon oxide, silicon nitride and a variety of metal-containing materials.

摘要翻译： 描述了在图案化的异质结构上蚀刻暴露的硅的方法，并且包括由含氟前体和含氢前体形成的远程等离子体蚀刻。 来自远程等离子体的等离子体流出物流入衬底处理区域，其中等离子体流出物与暴露的硅区域反应。 等离子体流出物与图案化的异质结构反应以选择性地除去硅，同时非常缓慢地除去其它暴露的材料。 硅选择性部分地导致远离等离子体中含氢前体的优势，氢终止在图案化异质结构上的表面。 含氟前体的流速要低得多，在氢封端的硅上逐渐取代氟氢，从而从硅的暴露区域选择性除去硅。 这些方法可用于选择性地除去硅比氧化硅，氮化硅和各种含金属材料更快的硅。