公开(公告)号：US20150049510A1

公开(公告)日：2015-02-19

申请号：US14384092

申请日：2013-03-12

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Luca Haiberger ,  Georg Bogner

IPC: H01L33/46 ,  F21V8/00 ,  G02F1/1335 ,  H01L33/52

CPC classification number: H01L33/46 ,  G02B6/0068 ,  G02B6/0073 ,  G02F1/1336 ,  G02F1/133603 ,  H01L25/0753 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/00

Abstract: A radiation-emitting semiconductor component including a volume-emitting semiconductor chip including a first main surface and a second main surface opposite the first main surface, a first reflective element arranged at the first main surface and reflects electromagnetic radiation emerging through the first main surface during operation of the semiconductor chip back to the first main surface, a second reflective element arranged at the second main surface and reflects electromagnetic radiation emerging through the second main surface during operation of the semiconductor chip back to the second main surface, and at least one radiation exit surface through which electromagnetic radiation generated during the operation of the semiconductor component emerges from the semiconductor component, wherein the at least one radiation exit surface runs transversely with respect to the first main surface and the second main surface of the semiconductor chip.

Abstract translation: 一种包括体积发射半导体芯片的辐射发射半导体部件，包括第一主表面和与第一主表面相对的第二主表面，第一反射元件布置在第一主表面处，并且反射通过第一主表面出射的电磁辐射 将半导体芯片的操作返回到第一主表面，布置在第二主表面处的第二反射元件反射在半导体芯片返回到第二主表面的操作期间通过第二主表面出射的电磁辐射，以及至少一个辐射 出射表面，通过所述出射表面在半导体组件的操作期间产生的电磁辐射从半导体部件出射，其中所述至少一个辐射出射表面相对于半导体芯片的第一主表面和第二主表面横向延伸。

公开(公告)号：US20230335690A1

公开(公告)日：2023-10-19

申请号：US18326801

申请日：2023-05-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Siegfried HERRMANN ,  Hubert Halbritter ,  Peter Brick ,  Thomas Schwarz ,  Laura Kreiner ,  Petrus Sundgren ,  Jean-Jacques Drolet ,  Michael Brandl ,  Xue Wang ,  Andreas Biebersdorf ,  Christoph Klemp ,  Ines Pietzonka ,  Julia Stolz ,  Simon Schwalenberg ,  Andreas Leber ,  Christine Rafael ,  Eva-Maria Rummel ,  Nicole Heitzer ,  Marie Assmann ,  Erwin Lang ,  Andreas Rausch ,  Marc Philippens ,  Karsten Diekmann ,  Stefan Illek ,  Christian Berger ,  Felix Feix ,  Ana Kanevce ,  Georg Bogner ,  Karl Engl

IPC: H01L33/52 ,  H01L33/50 ,  H01L33/60 ,  H01L33/04 ,  H01L25/075

CPC classification number: H01L33/52 ,  H01L33/502 ,  H01L33/60 ,  H01L33/04 ,  H01L25/0753 ,  B60K2370/1523 ,  B60K35/00

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20220328738A1

公开(公告)日：2022-10-13

申请号：US17639160

申请日：2020-08-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Berthold Hahn ,  Georg Bogner

IPC: H01L33/58 ,  H01L33/22 ,  H01L33/40 ,  H01L33/50 ,  H01L33/54 ,  H01L33/62 ,  H01L33/00

Abstract: A semiconductor component includes a radiation exit surface; a semiconductor body having an active region that generates radiation; wherein a molded body molded onto the semiconductor body; contacts for external electrical contacting of the semiconductor component are accessible on an outer side of the molded body; a deflection structure arranged between the active region and the radiation exit surface; a planarization layer arranged on the deflection structure; and a polarizer arranged on a side of the planarization layer facing away from the semiconductor body; wherein the semiconductor body on a side facing away from the radiation exit surface includes a mirror structure having at least one dielectric layer and a metallic connection layer, and the dielectric layer is arranged at locations between the semiconductor body and the metallic connection layer.

公开(公告)号：US20170263829A1

公开(公告)日：2017-09-14

申请号：US15509505

申请日：2015-09-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： David Racz ,  Michael Zitzlsperger ,  Georg Bogner

IPC: H01L33/58 ,  H01L33/48 ,  H01L33/50 ,  H01L25/075 ,  H01L33/62

CPC classification number: H01L33/58 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/46 ,  H01L33/486 ,  H01L33/502 ,  H01L33/505 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: An optoelectronic component includes a carrier, a light source formed on the carrier, the light source having at least one luminous face formed by one or more light emitting diodes, wherein an at least partly transparent lamina is arranged on the luminous face, the lamina having a surface facing the luminous face and a surface facing away from the luminous face, wherein at least one conversion layer and a color scattering layer for generating a color by light scattering are arranged on at least one of the facing and facing-away surfaces, wherein the conversion layer is arranged upstream of the color scattering layer relative to an emission direction of light from the luminous face, such that light emitted by the luminous face can first be converted and then be scattered.

公开(公告)号：US09911719B2

公开(公告)日：2018-03-06

申请号：US15310428

申请日：2015-03-31

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Frank Singer ,  Juergen Moosburger ,  Georg Bogner ,  Herbert Brunner ,  Matthias Sabathil ,  Norwin Von Malm

IPC: H01L25/075 ,  H01L33/54 ,  H01L33/62 ,  H01L33/00

CPC classification number: H01L25/0753 ,  H01L24/25 ,  H01L33/0095 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/24195 ,  H01L2224/82 ,  H01L2924/0002 ,  H01L2924/19105 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2924/00

Abstract: The invention relates to a semiconductor component (1) comprising: a plurality of semiconductor chips (2), each having a semiconductor layer sequence (200) with an active region (20) for generating radiation; a radiation output side (10) that runs parallel to the active regions (20); a mounting side surface (11) which is provided for securing the semiconductor component, and which runs in a transverse or perpendicular direction to the radiation output side; a molded body (4) which is shaped in places on the semiconductor chips, and which at least partially forms the mounting side surface; and a contact structure (50) which is arranged on the molded body, and which connects at least two semiconductor chips of the plurality of semiconductor chips in an electrically conductive manner. The invention also relates to a lighting device (9) and to a method for producing a semiconductor component.

公开(公告)号：US09431378B2

公开(公告)日：2016-08-30

申请号：US14515802

申请日：2014-10-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Joachim Reill ,  Georg Bogner ,  Stefan Grötsch

IPC: H01L25/13 ,  H01L25/075 ,  H01L33/62 ,  H05K1/02 ,  H01L33/64 ,  H01L33/46 ,  H01L33/48 ,  H01L33/50 ,  H01L33/60 ,  H05K1/05

CPC classification number: H01L25/13 ,  H01L25/0753 ,  H01L33/46 ,  H01L33/486 ,  H01L33/505 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L33/644 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48227 ,  H05K1/0203 ,  H05K1/05 ,  H05K3/445 ,  H05K2201/10106 ,  H05K2201/10409 ,  H01L2924/00014

Abstract: A light-emitting diode includes a carrier including a metallic basic body having an outer face including a mounting face; and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein the at least two light-emitting diode chips are embedded in a reflective coating covering the mounting face and side faces of the at least two light-emitting diode chips, the at least two light-emitting diode chips have radiation exit surfaces facing away from the carrier, and the at least two light-emitting diode chips protrude with radiation exit surfaces out of the reflective coating, or the reflective coating terminates flush with the radiation exit surfaces of the at least two light-emitting diode chips.

Abstract translation: 发光二极管包括：载体，其包括具有包括安装面的外表面的金属基体; 以及至少两个发光二极管芯片至少间接地固定在所述安装面上，其中所述至少两个发光二极管芯片被嵌入到覆盖所述安装面和所述至少两个光的侧面的反射涂层中 所述至少两个发光二极管芯片具有背离载体的辐射出射表面，并且所述至少两个发光二极管芯片从辐射出射表面突出出反射涂层，或者反射涂层终止 与至少两个发光二极管芯片的辐射出射表面齐平。