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    Light Emitting Diode Chip Having Temperature Compensation of the Wavelength
    13.
    发明申请
    Light Emitting Diode Chip Having Temperature Compensation of the Wavelength 审中-公开

    公开(公告)号：US20170271553A1

    公开(公告)日：2017-09-21

    申请号：US15532236

    申请日：2015-11-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Rudolph ,  Petrus Sundgren ,  Ivar Tangring

    IPC: H01L33/06 ,  H01L33/08

    CPC classification number: H01L33/06 ,  H01L33/08

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active layer is designed as a multiple quantum well structure, wherein the multiple quantum well structure has a first region of alternating first quantum well layers and first barrier layers and a second region having at least one second quantum well layer and at least one second barrier layer. The at least one second quantum well layer has an electronic band gap (EQW2) that is less than the electronic band gap (EQW1) of the first quantum well layers, and the at least one second barrier layer has an electronic band gap (EB2) that is greater than the electronic band gap (EB1) of the first barrier layers.

    METHOD FOR PRODUCING A PLURALITY OF COMPONENTS, COMPONENT, AND COMPONENT ASSEMBLY
    16.
    发明申请
    METHOD FOR PRODUCING A PLURALITY OF COMPONENTS, COMPONENT, AND COMPONENT ASSEMBLY 有权

    公开(公告)号：US20220181308A1

    公开(公告)日：2022-06-09

    申请号：US17600668

    申请日：2020-03-06

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Petrus Sundgren ,  Andreas Biebersdorf

    IPC: H01L25/075 ,  H01L33/60

    Abstract: The invention relates to a composite component made of a plurality of components, a modified sacrificial layer and a common intermediate carrier, in which the components each have a semiconductor body with an active zone, the semiconductor bodies being arranged on the intermediate carrier and being laterally spaced apart from one another by means of isolating trenches. The sacrificial layer is arranged in the vertical direction between the intermediate carrier and the semiconductor bodies, the sacrificial layer having a plurality of retaining elements between the semiconductor bodies and the common intermediate carrier, and the semiconductor bodies being mechanically connected to the intermediate carrier only by means of the retaining elements. The retaining elements are surrounded by cavities in lateral directions. The semiconductor bodies are designed to be detachable from the intermediate carrier, wherein the retaining elements release the semiconductor bodies from the intermediate carrier under mechanical strain or by means of irradiation or by means of etching. The invention further relates to a component having a semiconductor body which is detached from a composite component of this type, and to a method for producing a plurality of components of this type.

    Edge-Emitting Semiconductor Laser Diode and Method of Manufacturing the Same
    17.
    发明申请
    Edge-Emitting Semiconductor Laser Diode and Method of Manufacturing the Same 有权

    公开(公告)号：US20220102941A1

    公开(公告)日：2022-03-31

    申请号：US17596642

    申请日：2020-07-09

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Martin Hetzl ,  Petrus Sundgren ,  Jens Ebbecke ,  Uwe Strauß

    IPC: H01S5/20 ,  H01S5/028 ,  H01S5/02 ,  H01S5/10 ,  H01S5/343

    Abstract: In an embodiment, an edge-emitting semiconductor laser diode includes a growth substrate, a semiconductor layer sequence located on the growth substrate, the semiconductor layer sequence having an active layer and an etch stop layer and two facets located opposite each other, wherein the facets bound the semiconductor layer sequence in a lateral direction, wherein the semiconductor layer sequence includes two edge regions adjoining the facets and a central region directly adjoining both edge regions, wherein, within each of the edge regions, a volume fraction of the active layer in the semiconductor layer sequence is smaller than in the central region, wherein the active layer is spaced apart from one facet, wherein a distance of the active layer to the facet varies along a direction parallel to this facet, and wherein the etch stop layer is arranged between the growth substrate and the active layer.

    OPTOELECTRONIC COMPONENT AND METHOD OF MANUFACTURING AN OPTOELECTRONIC COMPONENT
    18.
    发明申请
    OPTOELECTRONIC COMPONENT AND METHOD OF MANUFACTURING AN OPTOELECTRONIC COMPONENT 有权

    公开(公告)号：US20210005786A1

    公开(公告)日：2021-01-07

    申请号：US16499490

    申请日：2018-05-17

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Petrus Sundgren ,  Wolfgang Schmid

    IPC: H01L33/38 ,  H01L33/00 ,  H01L33/14 ,  H01L33/30

    Abstract: An optoelectronic component includes first and second semiconductor layers and an active layer that generates electromagnetic radiation, wherein the active layer is disposed between the first and second semiconductor layers, a recess in the first semiconductor layer, a front side provided for coupling out the electromagnetic radiation, a first electrical connection layer and a second electrical connection layer disposed on a rear side opposite the front side, wherein the first electrical connection layer is arranged at least partially in the recess, and a contact zone with a dopant of a second conductivity type different from the first conductivity type, wherein the contact zone adjoins the recess, and the first semiconductor layer and the second semiconductor layer are highly doped to prevent diffusion of the dopant from the contact zone into the first semiconductor layer and diffusion of the dopant from the contact zone into the second semiconductor layer.

    Light-Emitting Diode Chip with Current Spreading Layer
    20.
    发明申请
    Light-Emitting Diode Chip with Current Spreading Layer 有权
    具有电流扩展层的发光二极管芯片

    公开(公告)号：US20150357516A1

    公开(公告)日：2015-12-10

    申请号：US14830616

    申请日：2015-08-19

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Petrus Sundgren ,  Elmar Baur ,  Martin Hohenadler ,  Clemens Hofmann

    IPC: H01L33/14 ,  H01L33/38 ,  H01L33/30 ,  H01L33/60 ,  H01L33/48

    CPC classification number: H01L33/14 ,  H01L31/112 ,  H01L33/02 ,  H01L33/30 ,  H01L33/305 ,  H01L33/382 ,  H01L33/40 ,  H01L33/486 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting diode chip includes a semiconductor layer sequence having a phosphide compound semiconductor material. The semiconductor layer sequence contains a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active region serves to emit electromagnetic radiation. The n-type semiconductor region faces a radiation exit area of the light-emitting diode chip, and the p-type semiconductor region faces a carrier of the light-emitting diode chip. A current spreading layer having a thickness of less than 500 nm is arranged between the carrier and the p-type semiconductor region. The current spreading layer has one or a plurality of p-doped AlxGa1-xAs layers with 0.5

    Abstract translation: 发光二极管芯片包括具有磷化物半导体材料的半导体层序列。 半导体层序列包含p型半导体区域，n型半导体区域和布置在p型半导体区域和n型半导体区域之间的有源层。 有源区域用于发射电磁辐射。 n型半导体区域面向发光二极管芯片的辐射出射区域，p型半导体区域面向发光二极管芯片的载体。 在载体和p型半导体区域之间布置有厚度小于500nm的电流扩散层。 电流扩散层具有一个或多个p掺杂的Al x Ga 1-x As层，其具有0.5

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