公开(公告)号：US10193303B2

公开(公告)日：2019-01-29

申请号：US15105554

申请日：2014-12-08

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Sebastian Taeger ,  Alexander Bachmann

IPC: H01S5/024 ,  H01S5/022 ,  H01S5/042 ,  H01S5/20 ,  H01S5/22

Abstract: A semiconductor laser diode is specified, comprising a semiconductor layer sequence (1) with semiconductor layers applied vertically one above another with an active layer (11), which emits laser radiation via a radiation coupling-out surface during operation, wherein the radiation coupling-out surface is formed by a side surface of the semiconductor layer sequence (1), and a heat barrier layer (2) and a metallic contact layer (5) laterally adjacent to one another on a main surface (12) of the semiconductor layer sequence (1), wherein the heat barrier layer (2) is formed by an electrically insulating porous material (9). As a result, the heat arising during operation is conducted via the p-type electrode (5) to a heat sink (20) and the formation of a two-dimensional temperature gradient is avoided. A thermal lens in the edge emitter is thus counteracted. Furthermore, a method for producing a semiconductor laser diode and a semiconductor laser diode arrangement are specified.

公开(公告)号：US20170317240A1

公开(公告)日：2017-11-02

申请号：US15650677

申请日：2017-07-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

IPC: H01L33/46 ,  H01L33/32 ,  H01L33/06 ,  H01L33/38 ,  H01L33/60 ,  H01L33/42 ,  H01L33/40 ,  H01L33/20

CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

公开(公告)号：US09741902B2

公开(公告)日：2017-08-22

申请号：US15156802

申请日：2016-05-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

IPC: H01L29/49 ,  H01L33/46 ,  H01L33/38 ,  H01L33/42 ,  H01L33/60 ,  H01L33/06 ,  H01L33/32 ,  H01L33/40 ,  H01L33/20

CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

公开(公告)号：US20140197435A1

公开(公告)日：2014-07-17

申请号：US14122134

申请日：2012-04-26

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

IPC: H01L33/42 ,  H01L33/60

CPC classification number: H01L33/46 ,  H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a minor layer, the TCO-layer being arranged between the n-side of the semiconductor body and the minor layer.

Abstract translation: 光电半导体芯片包括半导体材料的半导体本体，p接触层和n接触层。 半导体主体包括用于产生辐射的有源层。 半导体本体包括p侧和n侧，其间布置有源层。 p接触层用于电接触p侧。 n接触层用于电接触n侧1b。 n接触层包含TCO层和次层，TCO层布置在半导体主体的n侧和次要层之间。

公开(公告)号：US10115867B2

公开(公告)日：2018-10-30

申请号：US15650677

申请日：2017-07-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Markus Maute ,  Karl Engl ,  Sebastian Taeger ,  Robert Walter ,  Johannes Stocker

IPC: H01L29/49 ,  H01L33/46 ,  H01L33/32 ,  H01L33/06 ,  H01L33/42 ,  H01L33/38 ,  H01L33/60 ,  H01L33/20 ,  H01L33/40

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

公开(公告)号：US09761770B2

公开(公告)日：2017-09-12

申请号：US14760454

申请日：2014-01-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Johann Eibl ,  Sebastian Taeger ,  Lutz Höppel ,  Karl Engl ,  Stefanie Rammelsberger ,  Markus Maute ,  Michael Huber ,  Rainer Hartmann ,  Georg Hartung

IPC: H01L33/00 ,  H01L33/54 ,  H01L33/44 ,  H01L33/60 ,  H01L33/62 ,  H01L21/02 ,  H01L33/52 ,  H01L33/40

CPC classification number: H01L33/54 ,  G01B2210/306 ,  H01L21/0228 ,  H01L33/405 ,  H01L33/44 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2924/00

Abstract: An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

公开(公告)号：US20160365699A1

公开(公告)日：2016-12-15

申请号：US15118041

申请日：2015-02-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alfred Lell ,  Sebastian Taeger ,  Sophia Huppmann

IPC: H01S5/028 ,  H01S5/024

CPC classification number: H01S5/0282 ,  H01S5/02469 ,  H01S5/028

Abstract: A laser diode chip has a laser facet, which includes a coating. The coating includes an inorganic layer and an organic layer. In one example, the coating has a number of inorganic layers, including a heat-conductive layer. For example, the inorganic layers may form a reflection-increasing or reflection-decreasing layer sequence.

Abstract translation: 激光二极管芯片具有激光刻面，其包括涂层。 涂层包括无机层和有机层。 在一个实例中，涂层具有许多无机层，包括导热层。 例如，无机层可以形成反射增加或反射减少层序列。

公开(公告)号：US20150255683A1

公开(公告)日：2015-09-10

申请号：US14428896

申请日：2013-09-16

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Ion Stoll ,  Sebastian Taeger ,  Hans-Christoph Gallmeier ,  Gudrun Lindberg ,  Stefan Hartauer

IPC: H01L33/44 ,  H01L33/50 ,  H01L33/62 ,  H01L33/46

CPC classification number: H01L33/44 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2933/0025 ,  H01L2933/0033 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2924/00014

Abstract: A method can be used for fixing a matrix-free electrophoretically deposited layer on a semiconductor chip. A semiconductor wafer has a carrier substrate-and at least one semiconductor chip. The at least one semiconductor chip has an active zone for generating electromagnetic radiation. At least one contact area is formed on a surface of the at least one semiconductor chip facing away from the carrier substrate. A material is electrophoretically deposited on the surface of the at least one semiconductor chip facing away from the carrier substrate in order to form the electrophoretically deposited layer. Deposition of the material on the at least one contact area is prevented. An inorganic matrix material is applied to at least one section of a surface of the semiconductor wafer facing away from the carrier substrate in order to fix the material on the at least one semiconductor chip.

Abstract translation: 可以使用一种方法将半导体芯片上的无矩阵电泳沉积层固定。 半导体晶片具有载体衬底和至少一个半导体芯片。 所述至少一个半导体芯片具有用于产生电磁辐射的活动区域。 在至少一个半导体芯片的远离载体衬底的表面上形成至少一个接触区域。 为了形成电泳沉积层，将材料电泳沉积在至少一个半导体芯片背离载体衬底的表面上。 防止材料沉积在至少一个接触区域上。 将无机基质材料施加到半导体晶片的远离载体衬底的表面的至少一个部分，以将材料固定在至少一个半导体芯片上。