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    Method for reducing the intrinsic stress of high density plasma films
    12.
    发明授权
    Method for reducing the intrinsic stress of high density plasma films 失效
    降低高密度等离子体膜的固有应力的方法

    公开(公告)号：US07294205B1

    公开(公告)日：2007-11-13

    申请号：US09362504

    申请日：1999-07-27

    Applicant: K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

    Inventor： K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

    IPC: C23C16/50 ,  C23C16/503 ,  C23C16/515 ,  C23C16/40 ,  C23C16/24 ,  H01L21/306 ,  C23F1/00

    CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/517 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

    Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

    Abstract translation: 通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。 通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。 在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。 在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。

    Plasma treatment of hafnium-containing materials
    13.
    发明申请
    Plasma treatment of hafnium-containing materials 审中-公开
    含铪材料的等离子体处理

    公开(公告)号：US20060019033A1

    公开(公告)日：2006-01-26

    申请号：US11167070

    申请日：2005-06-24

    Applicant: Shankar Muthukrishnan ,  Rahul Sharangpani ,  Tejal Goyani ,  Pravin Narwankar ,  Shreyas Kher ,  Khaled Ahmed ,  Yi Ma

    Inventor： Shankar Muthukrishnan ,  Rahul Sharangpani ,  Tejal Goyani ,  Pravin Narwankar ,  Shreyas Kher ,  Khaled Ahmed ,  Yi Ma

    IPC: C23C16/00

    CPC classification number: H01L21/0228 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4488 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/56 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/0234 ,  H01L21/3141 ,  H01L21/3143 ,  H01L21/31637 ,  H01L21/31645

    Abstract: In one embodiment, a method for forming a dielectric material is provided which includes exposing a substrate sequentially to a metal-containing precursor and an oxidizing gas to form metal oxide (e.g., HfOx) during an ALD process and subsequently exposing the substrate to an inert plasma process and a thermal annealing process. Generally, the metal oxide contains hafnium, tantalum, titanium, aluminum, zirconium, lanthanum or combinations thereof. In one example, the inert plasma process contains argon and is free of nitrogen, while the thermal annealing process contains oxygen. In another example, an ALD process to form a metal oxide includes exposing the substrate sequentially to a metal precursor and an oxidizing gas containing water vapor formed by a catalytic water vapor generator. In an alternative embodiment, a method for forming a dielectric material is provide which includes exposing a substrate to a deposition process to form a metal oxide layer and subsequently exposing the substrate to a nitridation plasma process and a thermal annealing process to form metal oxynitride (e.g., HfOxNy).

    Abstract translation: 在一个实施例中，提供了一种用于形成介电材料的方法，其包括在ALD过程期间将衬底依次暴露于含金属的前体和氧化气体以形成金属氧化物（例如，HfO x x x） 随后将衬底暴露于惰性等离子体工艺和热退火工艺中。 通常，金属氧化物含有铪，钽，钛，铝，锆，镧或其组合。 在一个实例中，惰性等离子体工艺包含氩并且不含氮，而热退火工艺含有氧。 在另一个实例中，形成金属氧化物的ALD工艺包括将基板顺序地暴露于金属前体和含有由催化水蒸汽发生器形成的水蒸汽的氧化气体。 在替代实施例中，提供了形成电介质材料的方法，其包括将衬底暴露于沉积工艺以形成金属氧化物层，并随后将衬底暴露于氮化等离子体工艺和热退火工艺以形成金属氮氧化物（例如 ，HfO x N N y）。

    Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials
    14.
    发明申请
    Apparatuses and methods for atomic layer deposition of hafnium-containing high-k dielectric materials 审中-公开
    含铪高k电介质原子层沉积的装置和方法

    公开(公告)号：US20050271813A1

    公开(公告)日：2005-12-08

    申请号：US11127767

    申请日：2005-05-12

    Applicant: Shreyas Kher ,  Pravin Narwankar ,  Rahul Sharangapani

    Inventor： Shreyas Kher ,  Pravin Narwankar ,  Rahul Sharangapani

    IPC: C23C16/00 ,  C23C16/02 ,  C23C16/40 ,  C23C16/44 ,  C23C16/448 ,  C23C16/455 ,  C23C16/56 ,  F22B1/00

    CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

    Abstract: Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas usually contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator. In another example, a method includes sequentially exposing a substrate to the oxidizing gas and at least one precursor to deposit hafnium oxide, zirconium oxide, lanthanum oxide, tantalum oxide, titanium oxide, aluminum oxide, silicon oxide, aluminates thereof, silicates thereof, derivatives thereof or combinations thereof.

    Abstract translation: 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积电介质材料的方法。 在一个实例中，一种方法包括将衬底顺序地暴露于铪前体和氧化气体以在其上沉积氧化铪材料。 在另一个实例中，通过将衬底顺序地暴露于氧化气体和含有铪前体和硅前体的工艺气体来沉积硅酸铪材料。 氧化气体通常含有通过使氢源气体和氧源气体流过水蒸汽发生器而形成的水蒸气。 在另一个实例中，一种方法包括将衬底顺序地暴露于氧化气体和至少一种前体以沉积氧化铪，氧化锆，氧化镧，氧化钽，氧化钛，氧化铝，氧化硅，其铝酸盐，其硅酸盐，衍生物 或其组合。

    Method for fabricating a dielectric stack
    16.
    发明申请
    Method for fabricating a dielectric stack 审中-公开
    电介质叠层的制造方法

    公开(公告)号：US20060153995A1

    公开(公告)日：2006-07-13

    申请号：US11298553

    申请日：2005-12-09

    Applicant: Pravin Narwankar ,  Shreyas Kher ,  Shankar Muthukrishnan ,  Rahul Sharangpani ,  Philip Kraus ,  Chris Olsen ,  Khaled Ahmed

    Inventor： Pravin Narwankar ,  Shreyas Kher ,  Shankar Muthukrishnan ,  Rahul Sharangpani ,  Philip Kraus ,  Chris Olsen ,  Khaled Ahmed

    IPC: H05H1/24

    CPC classification number: C23C16/401 ,  C23C16/56

    Abstract: Methods for forming dielectric materials on a substrate in a single cluster tool are provided. In one embodiment, the method includes providing a cluster tool having a plurality of deposition chambers, depositing a metal-containing oxide layer on a substrate in a first chamber of the cluster tool, treating the metal-containing oxide layer with an insert plasma process in a second chamber of the cluster tool, annealing the metal-containing oxide layer in a third chamber of the cluster tool, and depositing a gate electrode layer on the annealed substrate in a fourth chamber of the cluster tool.

    Abstract translation: 提供了在单个集群工具中在基板上形成电介质材料的方法。 在一个实施例中，所述方法包括提供具有多个沉积室的簇工具，在所述簇工具的第一室中的衬底上沉积含金属氧化物层，用插入等离子体工艺处理含金属氧化物层 所述簇工具的第二室，在所述簇工具的第三室中退火所述含金属氧化物层，以及在所述簇工具的第四室中在所述退火的衬底上沉积栅极电极层。

    High deposition rate recipe for low dielectric constant films
    20.
    发明授权
    High deposition rate recipe for low dielectric constant films 失效
    低介电常数薄膜的高沉积速率配方

    公开(公告)号：US6136685A

    公开(公告)日：2000-10-24

    申请号：US868595

    申请日：1997-06-03

    Applicant: Pravin Narwankar ,  Laxman Murugesh ,  Turgut Sahin ,  Maciek Orczyk ,  Jianmin Qiao

    Inventor： Pravin Narwankar ,  Laxman Murugesh ,  Turgut Sahin ,  Maciek Orczyk ,  Jianmin Qiao

    IPC: H01L21/205 ,  C23C16/40 ,  C23C16/505 ,  C23C16/52 ,  H01L21/31 ,  H01L21/316 ,  H01L21/4763

    CPC classification number: H01L21/02131 ,  C23C16/401 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

    Abstract: An insulating film with a low dielectric constant is more quickly formed on a substrate by reducing the co-etch rate as the film is deposited. The process gas is formed into a plasma from silicon-containing and fluorine-containing gases. The plasma is biased with an RF field to enhance deposition of the film. Deposition and etching occur simultaneously. The relative rate of deposition to etching is increased in the latter portion of the deposition process by decreasing the bias RF power, which decreases the surface temperature of the substrate and decreases sputtering and etching activities. Processing time is reduced compared to processes with fixed RF power levels. Film stability, retention of water by the film, and corrosion of structures on the substrate are all improved. The film has a relatively uniform and low dielectric constant and may fill trenches with aspect ratios of at least 4:1 and gaps less than 0.5 .mu.m.

    Abstract translation: 当薄膜沉积时，通过降低共蚀刻速率，在衬底上更迅速地形成具有低介电常数的绝缘膜。 工艺气体由含硅和含氟气体形成等离子体。 等离子体被RF场偏置以增强膜的沉积。 沉积和蚀刻同时发生。 通过降低偏压RF功率，沉积过程的后一部分，相对于蚀刻的相对速率增加，这降低了衬底的表面温度并降低了溅射和蚀刻活性。 与具有固定RF功率级别的处理相比，处理时间缩短。 薄膜的稳定性，薄膜的水分保持性以及基板上的结构的腐蚀都得到改善。 该膜具有相对均匀和低的介电常数，并且可以填充具有至少4:1的纵横比和小于0.5μm的间隙的沟槽。

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