公开(公告)号：US12048207B2

公开(公告)日：2024-07-23

申请号：US18138866

申请日：2023-04-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L23/00 ,  B23K26/04 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/08 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H10K50/842 ,  H10K50/844 ,  H10K59/121 ,  H10K59/124 ,  H10K59/126 ,  H10K59/38 ,  H10K71/00 ,  H10K71/40 ,  H10K71/50 ,  H10K71/80 ,  H10K77/10 ,  H10K50/18 ,  H10K50/86 ,  H10K59/12 ,  H10K102/00 ,  H10N30/074

CPC classification number: H10K59/126 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H10K50/8426 ,  H10K50/844 ,  H10K59/1213 ,  H10K59/124 ,  H10K59/38 ,  H10K71/00 ,  H10K71/421 ,  H10K71/50 ,  H10K71/80 ,  H10K77/111 ,  H10K50/18 ,  H10K50/865 ,  H10K59/12 ,  H10K59/1201 ,  H10K2102/311 ,  H10K2102/351 ,  H10N30/074 ,  Y02E10/549 ,  Y02P70/50

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US11871600B2

公开(公告)日：2024-01-09

申请号：US17581064

申请日：2022-01-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Shingo Eguchi ,  Hiroki Adachi

IPC: H01L51/50 ,  H10K50/822 ,  H10K50/13 ,  H10K102/00

CPC classification number: H10K50/822 ,  H10K50/13 ,  H10K2102/341

Abstract: A display device with high display quality is provided. The display device includes a first lower electrode, a first EL layer over the first lower electrode, a second lower electrode, a second EL layer over the second lower electrode, an upper electrode over the first EL layer and the second EL layer, a first region not provided with the first lower electrode below the first EL layer, and a second region not provided with the second lower electrode below the second EL layer. In the first region, the upper electrode is positioned not to be in contact with the first lower electrode. In the second region, the upper electrode is positioned not to be in contact with the second lower electrode.

公开(公告)号：US11791350B2

公开(公告)日：2023-10-17

申请号：US17701961

申请日：2022-03-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuharu Hosaka ,  Satoru Idojiri ,  Kenichi Okazaki ,  Hiroki Adachi ,  Daisuke Kubota

IPC: H01L51/52 ,  H01L27/12 ,  H01L21/683 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121

CPC classification number: H01L27/1266 ,  H01L21/6835 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78603 ,  H01L29/78648 ,  H01L2221/6835 ,  H01L2221/68386 ,  H10K59/1213

Abstract: A peeling method at low cost with high mass productivity is provided. A resin layer having a thickness greater than or equal to 0.1 μm and less than or equal to 3 μm is formed over a formation substrate using a photosensitive and thermosetting material, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, the resin layer is irradiated with light using a linear laser device, and the transistor and the formation substrate are separated from each other. A first region and a second region which is thinner than the first region or an opening can be formed in the resin layer. In the case of forming a conductive layer functioning as an external connection terminal or the like to overlap with the second region or the opening of the resin layer, the conductive layer is exposed.

公开(公告)号：US20210257432A1

公开(公告)日：2021-08-19

申请号：US17307088

申请日：2021-05-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US10930870B2

公开(公告)日：2021-02-23

申请号：US16842820

申请日：2020-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kayo Kumakura ,  Hiroyuki Watanabe ,  Seiji Yasumoto ,  Satoru Idojiri ,  Hiroki Adachi

IPC: H01L51/00 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

公开(公告)号：US10355067B2

公开(公告)日：2019-07-16

申请号：US15894117

申请日：2018-02-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L27/32 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/0622 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L27/12 ,  H01L51/50 ,  H01L41/314

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US10345668B2

公开(公告)日：2019-07-09

申请号：US15987952

申请日：2018-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Masahiro Katayama ,  Seiji Yasumoto ,  Hiroki Adachi ,  Masataka Sato ,  Koji Kusunoki ,  Yoshiharu Hirakata

IPC: G02F1/1333 ,  G06F3/041 ,  G02F1/1362 ,  H01L27/12

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US10141526B2

公开(公告)日：2018-11-27

申请号：US15252295

申请日：2016-08-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B7/02 ,  B32B37/02 ,  B32B37/18 ,  B32B38/10 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B27/20 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B7/06 ,  B32B17/06 ,  B32B37/10 ,  B32B37/12 ,  H01L51/52

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

公开(公告)号：US10079353B2

公开(公告)日：2018-09-18

申请号：US15810249

申请日：2017-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B37/02 ,  B32B37/10 ,  B32B37/18

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

公开(公告)号：US09559316B2

公开(公告)日：2017-01-31

申请号：US15145246

申请日：2016-05-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masakatsu Ohno ,  Hiroki Adachi ,  Satoru Idojiri ,  Koichi Takeshima

IPC: H01L21/00 ,  H01L51/00 ,  H01L51/56 ,  H01L51/52 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  B23K26/04 ,  B23K26/06 ,  B23K26/08 ,  H01L27/12 ,  H01L51/50 ,  H01L41/314 ,  H01L27/32

CPC classification number: H01L27/3272 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L41/314 ,  H01L51/0024 ,  H01L51/0027 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5096 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Abstract translation: 在第一基板上形成第一有机树脂层; 在第一有机树脂层上形成第一绝缘膜; 第一元件层形成在第一绝缘膜上; 在第二基板上形成第二有机树脂层; 在第二有机树脂层上形成第二绝缘膜; 第二元件层形成在第二绝缘膜上; 第一基板和第二基板接合; 第一分离步骤，其中第一有机树脂层和第一基板之间的粘合力减小; 第一有机树脂层和第一柔性基板与第一接合层接合; 第二分离步骤，其中所述第二有机树脂层和所述第二基板之间的粘合减小; 并且第二有机树脂层和第二柔性基板与第二接合层接合。