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    Semiconductor device
    12.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US09882058B2

    公开(公告)日：2018-01-30

    申请号：US14258466

    申请日：2014-04-22

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Daisuke Matsubayashi ,  Toshimitsu Obonai ,  Noritaka Ishihara ,  Shunpei Yamazaki

    IPC: H01L27/12 ,  H01L29/786

    CPC classification number: H01L29/7869

    Abstract: A semiconductor device in which variation in electrical characteristics between transistors is reduced is provided. A transistor where a channel is formed in an oxide semiconductor layer is included, and a concentration of carriers contained in a region where the channel is formed in the oxide semiconductor layer is lower than or equal to 1×1015/cm3, preferably lower than or equal to 1×1013/cm3, more preferably lower than or equal to 1×1011/cm3, whereby an energy barrier height which electrons flowing between a source and a drain should go over converges at a constant value. In this manner, a semiconductor device in which variation in the electrical characteristics between the transistors is inhibited is provided.

    Semiconductor film, transistor, semiconductor device, display device, and electronic appliance
    15.
    发明授权
    Semiconductor film, transistor, semiconductor device, display device, and electronic appliance 有权
    半导体膜，晶体管，半导体器件，显示器件和电子器件

    公开(公告)号：US09559174B2

    公开(公告)日：2017-01-31

    申请号：US15068708

    申请日：2016-03-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Takahisa Ishiyama ,  Kenichi Okazaki ,  Chiho Kawanabe ,  Masashi Oota ,  Noritaka Ishihara

    IPC: H01L29/78 ,  H01L27/12 ,  H01L29/24 ,  C01G15/00 ,  H01L29/04 ,  H01L29/786

    CPC classification number: H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

    Abstract: Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

    Abstract translation: 给半导体器件提供有利的电特性。 此外，提供了具有高可靠性的半导体器件。 本发明的一个实施方案是具有多个电子衍射图案的氧化物半导体膜，其以使得形成氧化物半导体膜的表面被照射电子束，该电子束的半峰宽为 1nm。 多个电子衍射图案包括在不同区域中观察到的50个以上的电子衍射图案，第一电子衍射图案的百分比和第二电子衍射图案的百分比之和占100％，第一电子衍射图案占 90％以上时，第一电子衍射图案包括观察点，其表示c轴在与形成氧化物半导体膜的表面基本垂直的方向上取向。

    Oxide semiconductor stacked film and semiconductor device
    16.
    发明授权
    Oxide semiconductor stacked film and semiconductor device 有权
    氧化物半导体层叠膜和半导体器件

    公开(公告)号：US09123573B2

    公开(公告)日：2015-09-01

    申请号：US14527076

    申请日：2014-10-29

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Masashi Tsubuku ,  Ryosuke Watanabe ,  Masashi Oota ,  Noritaka Ishihara ,  Koki Inoue

    IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/10 ,  H01L29/24 ,  H01L29/786 ,  H01L21/66 ,  H01L29/423

    CPC classification number: H01L29/1054 ,  H01L22/14 ,  H01L29/247 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10−3/cm in an energy range of 1.5 eV to 2.3 eV.

    Abstract translation: 提供了不容易引起晶体管的电特性变化并且具有高稳定性的氧化物半导体层叠膜。 此外，提供了在其沟道形成区域中包括氧化物半导体层叠膜并且具有稳定的电特性的晶体管。 氧化物半导体层叠膜包括依次堆叠并且各自含有铟，镓和锌的第一氧化物半导体层，第二氧化物半导体层和第三氧化物半导体层。 第二氧化物半导体层中的铟的含量百分比高于第一氧化物半导体层和第三氧化物半导体层中的铟的含量百分比，并且通过CPM测量的氧化物半导体层叠膜的吸收系数低于或等于 在1.5eV至2.3eV的能量范围内等于3×10-3 / cm。

    Semiconductor device and method for manufacturing semiconductor device
    17.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US11742431B2

    公开(公告)日：2023-08-29

    申请号：US17501061

    申请日：2021-10-14

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

    IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

    CPC classification number: H01L29/7869 ,  H01L29/22 ,  H01L29/66969

    Abstract: A semiconductor device with favorable reliability is provided.
    The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

    Semiconductor device and method for manufacturing semiconductor device
    18.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US11152513B2

    公开(公告)日：2021-10-19

    申请号：US16643453

    申请日：2018-08-24

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

    IPC: H01L29/786 ,  H01L29/22 ,  H01L29/66

    Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

    Semiconductor device and method for manufactring semiconductor device
    19.
    发明授权
    Semiconductor device and method for manufactring semiconductor device 有权

    公开(公告)号：US10741679B2

    公开(公告)日：2020-08-11

    申请号：US15947902

    申请日：2018-04-09

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei Yamazaki ,  Kazutaka Kuriki ,  Yuji Egi ,  Hiromi Sawai ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Daisuke Matsubayashi

    IPC: H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L27/06 ,  H01L21/8258

    Abstract: Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.

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