公开(公告)号：US20240057464A1

公开(公告)日：2024-02-15

申请号：US18260841

申请日：2022-01-07

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shingo EGUCHI ,  Hiroki ADACHI ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Naoto KUSUMOTO ,  Kensuke YOSHIZUMI ,  Shunpei YAMAZAKI

IPC分类号： H10K71/00 ,  H01L21/67 ,  C23C14/56 ,  C23C16/54 ,  G03F7/00

CPC分类号： H10K71/811 ,  H01L21/67167 ,  H01L21/67184 ,  C23C14/566 ,  C23C16/54 ,  G03F7/0005 ,  H01L21/68707

摘要： Manufacturing equipment of a light-emitting device with which steps from formation to sealing of a light-emitting element can be successively performed can be provided. In the manufacturing equipment of a light-emitting device, a deposition step, a lithography step, an etching step, and a sealing step by forming a protective layer for forming an organic EL element can be successively performed, whereby a downscaled organic EL element achieving high luminance and high reliability can be formed. Moreover, the manufacturing equipment can have an in-line system where apparatuses are arranged in the order of process steps for the light-emitting device, resulting in high throughput manufacturing.

公开(公告)号：US20230329002A1

公开(公告)日：2023-10-12

申请号：US18023618

申请日：2021-08-24

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Hitoshi KUNITAKE ,  Haruyuki BABA ,  Yuki ITO ,  Fumito ISAKA ,  Kazuki TANEMURA ,  Yasumasa YAMANE ,  Tatsuya ONUKI

IPC分类号： H10B53/30

CPC分类号： H10B53/30

摘要： A semiconductor device that can be miniaturized or highly integrated is provided. A first conductor is formed over a substrate, a ferroelectric layer is formed over the first conductor, a second conductor is formed over the ferroelectric layer while substrate heating is performed, the ferroelectric layer includes hafnium oxide and zirconium oxide, and heat treatment at 500° C. or higher is not performed after the formation of the second conductor.

公开(公告)号：US20230262952A1

公开(公告)日：2023-08-17

申请号：US18015118

申请日：2021-08-05

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Motomu KURATA ,  Tsutomu MURAKAWA ,  Ryo ARASAWA ,  Kunihiro FUKUSHIMA ,  Yasumasa YAMANE ,  Shinya SASAGAWA

IPC分类号： H10B12/00

CPC分类号： H10B12/01

摘要： A semiconductor device with a small variation in transistor characteristics can be provided. A step of forming an opening in a structure body including an oxide semiconductor device to reach the oxide semiconductor device, a step of embedding a first conductor in the opening, a step of forming a second conductor in contact with a top surface of the first conductor, a step of forming a first barrier insulating film by a sputtering method to cover the structure body, the first conductor, and the second conductor, and a step of forming a second barrier insulating film over the first barrier insulating film by an ALD method are included. The first barrier insulating film and the second barrier insulating film each have a function of inhibiting hydrogen diffusion.

公开(公告)号：US20210167211A1

公开(公告)日：2021-06-03

申请号：US17047710

申请日：2019-04-18

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Yasumasa YAMANE ,  Takashi HIROSE ,  Teruyuki FUJI ,  Hajime KIMURA ,  Daigo SHIMADA

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L29/51

摘要： A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

公开(公告)号：US20200266281A1

公开(公告)日：2020-08-20

申请号：US16755208

申请日：2018-10-29

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Tomoki HIRAMATSU ,  Yusuke NONAKA ,  Noritaka ISHIHARA ,  Shota SAMBONSUGE ,  Yasumasa YAMANE ,  Yuta ENDO

IPC分类号： H01L29/51 ,  H01L21/8238

摘要： A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.

公开(公告)号：US20180076296A1

公开(公告)日：2018-03-15

申请号：US15697564

申请日：2017-09-07

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yasumasa YAMANE ,  Ryo TOKUMARU ,  Hiromi SAWAI

IPC分类号： H01L29/49 ,  H01L29/24 ,  H01L29/423 ,  H01L29/786 ,  H01L21/443 ,  H01L29/66

CPC分类号： H01L29/4908 ,  H01L21/443 ,  H01L21/4825 ,  H01L21/4842 ,  H01L21/565 ,  H01L21/78 ,  H01L22/14 ,  H01L23/544 ,  H01L27/1052 ,  H01L27/1207 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

摘要： A semiconductor device having stable electrical characteristics is provided. A semiconductor device that can be miniaturized or highly integrated is provided. One embodiment of the present invention includes a transistor including an oxide, a first barrier layer over the transistor, and a second barrier layer in contact with the first barrier layer. The oxide is in contact with an insulator including an excess-oxygen region. The insulator is in contact with the first barrier layer. The first barrier layer has a thickness greater than or equal to 0.5 nm and less than or equal to 1.5 nm. The second barrier layer is thicker than the first barrier layer.

公开(公告)号：US20170062620A1

公开(公告)日：2017-03-02

申请号：US15244041

申请日：2016-08-23

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Masashi OOTA ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE

IPC分类号： H01L29/786 ,  H01L29/06 ,  H01L29/24

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

摘要： A novel oxide semiconductor is provided. An oxide semiconductor contains In, an element M (M represents Al, Ga, Y, or Sn), and Zn. The oxide semiconductor has little characteristics variation and structure change and has high electron mobility in the case where the atomic ratio of In to M and Zn in the oxide semiconductor ranges from 4:2:3 to 4:2:4.1 or is a neighborhood thereof.

摘要翻译： 提供了一种新型氧化物半导体。 氧化物半导体含有In，元素M（M表示Al，Ga，Y或Sn）和Zn。 在氧化物半导体中的In与M和Zn的原子比为4：2：3〜4：2：4.1的情况下，氧化物半导体具有很小的特性变化和结构变化，并且具有高的电子迁移率，或者是其附近 。

公开(公告)号：US20170018631A1

公开(公告)日：2017-01-19

申请号：US15276993

申请日：2016-09-27

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Tetsuhiro TANAKA ,  Masashi TSUBUKU ,  Toshihiko TAKEUCHI ,  Ryo TOKUMARU ,  Mitsuhiro ICHIJO ,  Satoshi TORIUMI ,  Takashi OHTSUKI ,  Toshiya ENDO

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC分类号： H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

摘要： A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

摘要翻译： 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。

公开(公告)号：US20160197193A1

公开(公告)日：2016-07-07

申请号：US15068708

申请日：2016-03-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Akihisa SHIMOMURA ,  Yasumasa YAMANE ,  Yuhei SATO ,  Takahisa ISHIYAMA ,  Kenichi OKAZAKI ,  Chiho KAWANABE ,  Masashi OOTA ,  Noritaka ISHIHARA

IPC分类号： H01L29/786 ,  H01L29/04 ,  H01L27/12

CPC分类号： H01L29/7869 ,  C01G15/006 ,  C01P2002/72 ,  C01P2002/89 ,  C01P2004/04 ,  C01P2006/40 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/78696

摘要： Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One embodiment of the present invention is an oxide semiconductor film having a plurality of electron diffraction patterns which are observed in such a manner that a surface where the oxide semiconductor film is formed is irradiated with an electron beam having a probe diameter whose half-width is 1 nm. The plurality of electron diffraction patterns include 50 or more electron diffraction patterns which are observed in different areas, the sum of the percentage of first electron diffraction patterns and the percentage of second electron diffraction patterns accounts for 100%, the first electron diffraction patterns account for 90% or more, the first electron diffraction pattern includes observed points which indicates that a c-axis is oriented in a direction substantially perpendicular to the surface where the oxide semiconductor film is formed.

公开(公告)号：US20160190273A1

公开(公告)日：2016-06-30

申请号：US15066018

申请日：2016-03-10

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Hiroshi FUJIKI ,  Hiromichi GODO ,  Yasumasa YAMANE

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC分类号： H01L29/4908 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869

摘要： The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.

摘要翻译： 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。