公开(公告)号：US20160365486A1

公开(公告)日：2016-12-15

申请号：US15244744

申请日：2016-08-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Chang Yeon KIM ,  Sung Su SON ,  Joon Sup LEE ,  Jong Hyeon CHAE

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/06 ,  H01L33/48 ,  H01L33/62

CPC classification number: H01L33/382 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/24 ,  H01L33/486 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/16225 ,  H01L2933/0016

Abstract: A light emitting device includes a light emitting structure including a support structure including a first bulk electrode a second bulk electrode disposed on and electrically connected to the first electrode and the second electrode, respectively. A substrate is disposed adjacent to the support structure, wherein each of the first and second bulk electrodes includes an upper region and a lower region with the upper regions of the first and second bulk electrodes being separated from each other by a first distance. The substrate includes a first interconnection portion and a second interconnection portion electrically connected to the first bulk electrode and the second bulk electrode, respectively, and separated from each other by a second distance. The second distance is greater than the first distance.

Abstract translation: 发光器件包括发光结构，其包括支撑结构，该支撑结构包括分别设置在第一电极和第二电极上并与之电连接的第一体电极和第二体电极。 衬底被布置成与支撑结构相邻，其中第一和第二体电极中的每一个包括上部区域和下部区域，其中第一和第二体电极的上部区域彼此分开第一距离。 衬底包括分别电连接到第一体电极和第二体电极的第一互连部分和第二互连部分，并且彼此分开第二距离。 第二距离大于第一距离。

公开(公告)号：US20240313184A1

公开(公告)日：2024-09-19

申请号：US18671619

申请日：2024-05-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/10 ,  H01L33/46

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

公开(公告)号：US20230079200A1

公开(公告)日：2023-03-16

申请号：US17987711

申请日：2022-11-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Jae Kwon KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/46 ,  H01L23/00 ,  H01L33/10 ,  H01L33/40 ,  H01L33/48

Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

公开(公告)号：US20220208851A1

公开(公告)日：2022-06-30

申请号：US17697410

申请日：2022-03-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Kyu KIM ,  So Ra LEE ,  Yeo Jin YOON ,  Jae Kwon KIM ,  Joon Sup LEE ,  Min Woo KANG ,  Se Hee OH ,  Hyun A. KIM ,  Hyoung Jin LIM

IPC: H01L27/15 ,  H01L33/08 ,  H01L33/38 ,  H01L33/58 ,  H01L33/60 ,  H01L33/64 ,  H01L33/36 ,  H01L33/62

Abstract: A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.

公开(公告)号：US20200098949A1

公开(公告)日：2020-03-26

申请号：US16660460

申请日：2019-10-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Hyun A KIM ,  Daewoong SUH

IPC: H01L33/44 ,  H01L23/00 ,  H01L33/24 ,  H01L33/14 ,  H01L33/10 ,  H01L33/62 ,  H01L33/54 ,  H01L33/40 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075 ,  H01L33/08

Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.

公开(公告)号：US20150325752A1

公开(公告)日：2015-11-12

申请号：US14807290

申请日：2015-07-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Chung Hoon LEE ,  Daewoong SUH ,  Jong Min JANG ,  Joon Sup LEE ,  Won Young ROH ,  Min Woo KANG ,  Hyun A KIM ,  Seon Min BAE

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L27/153 ,  H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0025

Abstract: A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.