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    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    12.
    发明申请
    LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    发光二极管及其制造方法

    公开(公告)号：US20150221822A1

    公开(公告)日：2015-08-06

    申请号：US14690036

    申请日：2015-04-17

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Kwang Joong Kim ,  Chang Suk Han ,  Kyung Hee Ye ,  Seung Kyu Choi ,  Ki Bum Nam ,  Nam Yoon Kim ,  Kyung Hae Kim ,  Ju Hyung Yoon

    IPC: H01L33/06 ,  H01L33/32 ,  H01L33/00

    CPC classification number: H01L33/06 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L33/32

    Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

    Abstract translation: 本发明的示例性实施例公开了一种发光二极管，其包括掺杂有硅的n型接触层，p型接触层，设置在n型接触层和p型接触层之间的有源区，超晶格 所述超晶格层包括多个层，设置在所述超晶格层和所述n型接触层之间的未掺杂的中间层以及设置在所述未掺杂的中间层之间的电子增强层 层和超晶格层。 只有最靠近有源区的超晶格层的最后一层掺杂有硅，并且最终层的硅掺杂浓度高于n型接触层的掺杂浓度。

    AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME
    13.
    发明申请
    AC LIGHT EMITTING DEVICE WITH LONG-PERSISTENT PHOSPHOR AND LIGHT EMITTING DEVICE MODULE HAVING THE SAME 审中-公开
    具有长时间荧光的交流发光装置和具有其的发光装置模块

    公开(公告)号：US20140328056A1

    公开(公告)日：2014-11-06

    申请号：US14295134

    申请日：2014-06-03

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chung Hoon Lee ,  Yeo Jin Yoon ,  Dae Won Kim ,  Dae Sung Cho ,  Kyung Hee Ye

    IPC: H01L33/50 ,  F21V23/06 ,  F21K99/00

    CPC classification number: H01L33/504 ,  F21K9/00 ,  F21K9/62 ,  F21K9/64 ,  F21V23/06 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L25/0753 ,  H01L33/50 ,  H01L2224/48137 ,  H01L2224/49107 ,  H05B33/0821

    Abstract: An AC light emitting device includes a first light emitting diode chip and a second light emitting diode chip, each of which has a plurality of light emitting cells on a single substrate. A first long-persistent phosphor is positioned on the first light emitting diode chip to perform wavelength conversion for a portion of light emitted from the first light emitting diode chip, and a second long-persistent phosphor is positioned on the second light emitting diode chip to perform wavelength conversion for a portion of light emitted from the second light emitting diode chip. The afterglow luminescence period of the second long-persistent phosphor is different from that of the first long-persistent phosphor.

    Abstract translation: 交流发光装置包括第一发光二极管芯片和第二发光二极管芯片，每个芯片在单个基板上具有多个发光单元。 第一长持续荧光体位于第一发光二极管芯片上以对从第一发光二极管芯片发射的光的一部分进行波长转换，并且第二长持续荧光体位于第二发光二极管芯片上 对从第二发光二极管芯片发射的光的一部分进行波长转换。 第二长持续荧光体的余辉发光期与第一长持续荧光体不同。

    Light emitting device having a plurality of light emitting cells
    18.
    发明授权
    Light emitting device having a plurality of light emitting cells 有权
    具有多个发光单元的发光器件

    公开(公告)号：US09349912B2

    公开(公告)日：2016-05-24

    申请号：US14229656

    申请日：2014-03-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Kyung Hee Ye ,  Dae Sung Cho ,  Won Cheol Seo ,  Young Eun Yang ,  Sum Geun Lee

    IPC: H01L33/08 ,  H05B33/08 ,  H01L27/15 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20

    CPC classification number: H01L33/08 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H05B33/0821 ,  H01L2924/00

    Abstract: Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.

    Abstract translation: 本发明的示例性实施例涉及包括单个基板的发光器件，设置在单个基板上的至少两个发光单元，所述至少两个发光单元中的每一个包括第一导电型半导体层， 第二导电型半导体层和设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，连接到第一导电类型半导体层的第一电极和连接到第二导电类型半导体层的第二电极 第二导电型半导体层，其中所述至少两个发光单元中的两个发光单元共享第一导电类型半导体层。

    LIGHT EMITTING DIODE HAVING ELECTRODE PADS
    19.
    发明申请
    LIGHT EMITTING DIODE HAVING ELECTRODE PADS 审中-公开
    具有电极垫的发光二极管

    公开(公告)号：US20150187996A1

    公开(公告)日：2015-07-02

    申请号：US14645227

    申请日：2015-03-11

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Won Cheol Seo ,  Dae Sung Cho ,  Kyung Hee Ye ,  Kyoung Wan Kim ,  Yeo Jin Yoon

    IPC: H01L33/38 ,  H01L33/08 ,  H01L33/32

    CPC classification number: H01L33/387 ,  H01L33/08 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

    Abstract translation: 衬底，布置在衬底上的第一导电类型半导体层，布置在第一导电类型半导体层上的第二导电类型半导体层，设置在第一导电类型半导体层和第二导电类型半导体层之间的有源层，第一导电类型半导体层 电连接到第一导电型半导体层的电极焊盘，布置在第二导电类型半导体层上的第二电极焊盘，设置在第二导电类型半导体层和第二电极焊盘之间的绝缘层，以及至少一个电连接 到所述第二电极焊盘，所述至少一个上延伸部电连接到所述第二导电型半导体层。

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