公开(公告)号：US20160087084A1

公开(公告)日：2016-03-24

申请号：US14964130

申请日：2015-12-09

Applicant: STMicroelectronics S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/66 ,  H01L21/265

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

Abstract translation: 方法形成电子半导体器件，其包括具有彼此相对的第一侧和第二侧的主体，并且包括面向第二侧的第一结构区域和在第一结构区域上延伸并面向第一侧面的第二结构区域。 身体区域在第一侧的第二结构区域中延伸。 源极区域在体区内延伸，并且轻掺杂的漏极区域面向身体的第一侧。 在主体区域上形成栅电极。 沟槽电介质区域在与沟槽电介质区域紧邻的第一沟槽导电区域中延伸穿过第二结构区域。 第二沟槽导电区域与身体区域和源区域电接触。 身体上的电接触通过第一结构区域与漏区电接触。

公开(公告)号：US20140167060A1

公开(公告)日：2014-06-19

申请号：US14104317

申请日：2013-12-12

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Marcello Francesco Salvatore Giuffrida

IPC: H01L27/06 ,  H01L29/808 ,  H01L29/78 ,  H01L29/778

CPC classification number: H01L27/0617 ,  H01L23/49562 ,  H01L23/49575 ,  H01L24/05 ,  H01L24/06 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L27/0605 ,  H01L27/088 ,  H01L27/098 ,  H01L29/778 ,  H01L29/7816 ,  H01L29/808 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/0603 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2224/49112 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/1033 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13062 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: An electronic power component including a normally on high-voltage transistor and a normally off low-voltage transistor. The normally on transistor and the normally off transistor are coupled in cascode configuration and are housed in a single package. The normally off transistor is of the bottom-source type.

Abstract translation: 一种电子功率元件，包括通常在高压晶体管和常关的低压晶体管。 通常在晶体管和常关晶体管以共成型配置耦合并且容纳在单个封装中。 常闭晶体管是底部源型。

公开(公告)号：US20130342264A1

公开(公告)日：2013-12-26

申请号：US13924159

申请日：2013-06-21

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Stefania Maria Serena Privitera

IPC: H01C10/50

CPC classification number: H01C10/50 ,  H01C17/232 ,  H01C17/265 ,  H01L22/14 ,  H01L22/20 ,  H01L23/5228 ,  H01L28/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An integrated circuit has a circuit part and a trimmable resistor, the resistance whereof may be modified by Joule effect. The trimmable resistor has first and second connection terminals coupled to the circuit part, and an intermediate terminal that divides the trimmable resistor into two portions. The first and the second connection terminals and the intermediate terminal are coupled to respective pads configured to receive electrical quantities designed to cause, in use, a respective trimming current flow in each portion. In this way, a substantially zero voltage drop is maintained between the first and second connection terminals while current is flowing in the resistor to change an electrical characteristic of the resistor, such as resistance or thermal coefficient.

Abstract translation: 集成电路具有电路部分和可调整电阻，其电阻可以通过焦耳效应进行修改。 可调整电阻器具有耦合到电路部分的第一和第二连接端子以及将可调整电阻器分为两部分的中间端子。 第一和第二连接端子和中间端子耦合到相应的焊盘，其被配置成接收设计成在使用中导致每个部分中的相应修整电流的电量。 以这种方式，在第一和第二连接端子之间保持基本为零的电压降，同时电流在电阻器中流动以改变电阻器的电特性，例如电阻或热系数。

公开(公告)号：US12166141B2

公开(公告)日：2024-12-10

申请号：US17719205

申请日：2022-04-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L21/74 ,  H01L29/06 ,  H01L31/0216 ,  H01L31/028 ,  H01L31/0312 ,  H01L31/107 ,  H01L31/18 ,  H01L27/144 ,  H01L27/146

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US11538903B2

公开(公告)日：2022-12-27

申请号：US16945220

申请日：2020-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Giuseppe Longo ,  Lucio Renna

IPC: H01L29/06 ,  H01L21/265 ,  H01L21/266 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

公开(公告)号：US11335823B2

公开(公告)日：2022-05-17

申请号：US16370636

申请日：2019-03-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Antonello Santangelo ,  Massimo Cataldo Mazzillo ,  Salvatore Cascino ,  Giuseppe Longo ,  Antonella Sciuto

IPC: H01L31/0352 ,  H01L31/107 ,  H01L31/0312 ,  H01L27/146 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/028 ,  H01L27/144

Abstract: The photodetector is formed in a silicon carbide body formed by a first epitaxial layer of an N type and a second epitaxial layer of a P type. The first and second epitaxial layers are arranged on each other and form a body surface including a projecting portion, a sloped lateral portion, and an edge portion. An insulating edge region extends over the sloped lateral portion and the edge portion. An anode region is formed by the second epitaxial layer and is delimited by the projecting portion and by the sloped lateral portion. The first epitaxial layer forms a cathode region underneath the anode region. A buried region of an N type, with a higher doping level than the first epitaxial layer, extends between the anode and cathode regions, underneath the projecting portion, at a distance from the sloped lateral portion as well as from the edge region.

公开(公告)号：US10297677B2

公开(公告)日：2019-05-21

申请号：US15927646

申请日：2018-03-21

Applicant: STMicroelectronics S.r.l.

Inventor： Antonello Santangelo ,  Salvatore Cascino ,  Leonardo Gervasi

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/417 ,  H01L29/08 ,  H01L21/265 ,  H01L29/40 ,  H01L29/78 ,  H01L21/8234 ,  H01L29/49 ,  H01L29/10 ,  H01L29/06

Abstract: Methods are directed to forming an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

公开(公告)号：US09954079B2

公开(公告)日：2018-04-24

申请号：US14964130

申请日：2015-12-09

Applicant: STMicroelectronics S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/66 ,  H01L27/088 ,  H01L29/417 ,  H01L29/08 ,  H01L21/265 ,  H01L29/40 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/49 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L29/66681 ,  H01L21/26586 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/088 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/66613 ,  H01L29/66689 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7835

Abstract: Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

公开(公告)号：US09450076B2

公开(公告)日：2016-09-20

申请号：US14601081

申请日：2015-01-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/76 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/417 ,  H01L27/088

CPC classification number: H01L29/66681 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66696 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

Abstract translation: 一种电子半导体器件，包括具有第一结构区域和第二结构区域的半导体本体，其在第一结构区域上延伸并容纳漏极区域; 身体区域，其延伸到第二结构区域; 源区域，其延伸到身体区域中; 以及栅极电极，其延伸在半导体主体上，用于在源极区域和漏极区域之间产生导电沟道。 该器件包括延伸穿过栅电极的一侧上的第二结构区域并与其电绝缘的第一导电沟槽; 以及第二导电沟槽，其延伸穿过所述源极区域，所述主体区域，并且穿过所述栅极电极的相对侧上的所述第二结构区域的右侧，与所述第二结构区域电绝缘并且电耦合到所述主体区域和所述源极区域 。

公开(公告)号：US20150206968A1

公开(公告)日：2015-07-23

申请号：US14601081

申请日：2015-01-20

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Salvatore Cascino ,  Leonardo Gervasi ,  Antonello Santangelo

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/66681 ,  H01L27/088 ,  H01L29/0634 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/0882 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/404 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/66659 ,  H01L29/66696 ,  H01L29/66719 ,  H01L29/66727 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7823 ,  H01L29/7835

Abstract: An electronic semiconductor device including a semiconductor body having a first structural region and a second structural region, which extends on the first structural region and houses a drain region; a body region, which extends into the second structural region; a source region, which extends into the body region; and a gate electrode, which extends over the semiconductor body for generating a conductive channel between the source region and the drain region. The device includes a first conductive trench extending through, and electrically insulated from, the second structural region on one side of the gate electrode; and a second conductive trench extending through the source region, the body region, and right through the second structural region on an opposite side of the gate electrode, electrically insulated from the second structural region and electrically coupled to the body region and to the source region.

Abstract translation: 一种电子半导体器件，包括具有第一结构区域和第二结构区域的半导体本体，其在第一结构区域上延伸并容纳漏极区域; 身体区域，其延伸到第二结构区域; 源区域，其延伸到身体区域中; 以及栅极电极，其延伸在半导体主体上，用于在源极区域和漏极区域之间产生导电沟道。 该器件包括延伸穿过栅电极的一侧上的第二结构区域并与其电绝缘的第一导电沟槽; 以及第二导电沟槽，其延伸穿过所述源极区域，所述主体区域，并且穿过所述栅极电极的相对侧上的所述第二结构区域的右侧，与所述第二结构区域电绝缘并且电耦合到所述体区域和所述源极区域 。