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    Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
    11.
    发明授权
    Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories 有权
    使用不对称自由层并适用于自旋转移转矩存储器的磁结

    公开(公告)号：US09577181B2

    公开(公告)日：2017-02-21

    申请号：US14880650

    申请日：2015-10-12

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jangeun Lee

    IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L27/22 ,  H01L43/10

    CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The first and second ferromagnetic layers each contain at least one of Co and CoFe. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，不对称自由层和垂直磁各向异性（PMA）诱导层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层位于非磁性间隔层和PMA诱导层之间。 不对称自由层包括具有第一硼含量的第一铁磁层和具有第二硼含量的第二铁磁层。 第二硼含量低于第一硼含量。 第一硼含量和第二硼含量均大于零原子百分比。 第一和第二铁磁层各自含有Co和CoFe中的至少一种。 磁结被配置成使得当写入电流通过磁结时，非对称自由层可在稳定磁状态之间切换。

    MAGNETIC JUNCTIONS USING ASYMMETRIC FREE LAYERS AND SUITABLE FOR USE IN SPIN TRANSFER TORQUE MEMORIES
    13.
    发明申请
    MAGNETIC JUNCTIONS USING ASYMMETRIC FREE LAYERS AND SUITABLE FOR USE IN SPIN TRANSFER TORQUE MEMORIES 有权
    使用不对称自由层并适用于旋转转矩记忆的磁性结

    公开(公告)号：US20160035970A1

    公开(公告)日：2016-02-04

    申请号：US14880650

    申请日：2015-10-12

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jangeun Lee

    IPC: H01L43/02 ,  H01L27/22 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The first and second ferromagnetic layers each contain at least one of Co and CoFe. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，不对称自由层和垂直磁各向异性（PMA）诱导层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层位于非磁性间隔层和PMA诱导层之间。 不对称自由层包括具有第一硼含量的第一铁磁层和具有第二硼含量的第二铁磁层。 第二硼含量低于第一硼含量。 第一硼含量和第二硼含量均大于零原子百分比。 第一和第二铁磁层各自含有Co和CoFe中的至少一种。 磁结被配置成使得当写入电流通过磁结时，非对称自由层可在稳定磁状态之间切换。

    Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories
    14.
    发明授权
    Magnetic junctions using asymmetric free layers and suitable for use in spin transfer torque memories 有权
    使用不对称自由层并适用于自旋转移转矩存储器的磁结

    公开(公告)号：US09184375B1

    公开(公告)日：2015-11-10

    申请号：US14558145

    申请日：2014-12-02

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jangeun Lee

    IPC: H01L29/82 ,  H01L43/02 ,  H01L43/08 ,  H01L27/22 ,  H01L43/12

    CPC classification number: H01L43/02 ,  H01L27/222 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device is described. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, an asymmetric free layer and a perpendicular magnetic anisotropy (PMA) inducing layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer is between the nonmagnetic spacer layer and the PMA inducing layer. The asymmetric free layer includes a first ferromagnetic layer having a first boron content and a second ferromagnetic layer having a second boron content. The second boron content is less than the first boron content. The first boron content and the second boron content are each greater than zero atomic percent. The magnetic junction is configured such that the asymmetric free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction.

    Abstract translation: 描述可用于磁性装置的磁结。 磁结包括钉扎层，非磁性间隔层，不对称自由层和垂直磁各向异性（PMA）诱导层。 非磁性间隔层位于被钉扎层和自由层之间。 自由层位于非磁性间隔层和PMA诱导层之间。 不对称自由层包括具有第一硼含量的第一铁磁层和具有第二硼含量的第二铁磁层。 第二硼含量低于第一硼含量。 第一硼含量和第二硼含量均大于零原子百分比。 磁结被配置成使得当写入电流通过磁结时，非对称自由层可在稳定磁状态之间切换。

    SEMICONDUCTOR DEVICES INCLUDING BIT LINES
    16.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING BIT LINES 有权

    公开(公告)号：US20250107073A1

    公开(公告)日：2025-03-27

    申请号：US18804605

    申请日：2024-08-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seran Oh ,  Yunho Kang ,  Minsik Kim ,  Yeonuk Kim ,  Byounghoon Lee ,  Jangeun Lee

    IPC: H10B12/00 ,  H01L23/528 ,  H01L23/532

    Abstract: A semiconductor device may include a substrate including a first active region defined by a first device isolation layer, a bit line contact arranged on the first active region of the substrate, and a bit line that extends in a first direction on the substrate. The bit line includes a lower conductive layer arranged on the substrate and on a sidewall of the bit line contact and a metal line stack arranged on the lower conductive layer. The metal line stack includes a first conductive layer arranged on the lower conductive layer and the bit line contact and including a first metal material, a first intermediate layer arranged on the first conductive layer and including graphene, and a second conductive layer arranged on the first intermediate layer and including the first metal material.

    Magnetic memory device
    17.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US11456332B2

    公开(公告)日：2022-09-27

    申请号：US16884769

    申请日：2020-05-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ung Hwan Pi ,  Sung Chul Lee ,  Jangeun Lee

    IPC: H01L27/22 ,  H01L43/02 ,  G11C5/02

    Abstract: A magnetic memory device includes a first cell array structure including first and second free magnetic patterns which extend in a first direction parallel to a top surface of a substrate and are spaced apart from each other in a second direction intersecting the first direction, and a second cell array structure including a third free magnetic pattern between the first and second free magnetic patterns and a fourth free magnetic pattern spaced apart from the third free magnetic pattern with the second free magnetic pattern therebetween. The first cell array structure further includes a first transistor region including first transistors connected to the first and second free magnetic patterns. The second cell array structure further includes a second transistor region including second transistors connected to the third and fourth free magnetic patterns. The second transistor region is spaced apart from the first transistor region in the first direction.

    Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications
    18.
    发明授权
    Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications 有权
    提供可用于旋转转矩磁性随机存取存储器应用中的稀土磁结的方法和系统

    公开(公告)号：US09508924B2

    公开(公告)日：2016-11-29

    申请号：US14731267

    申请日：2015-06-04

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jangeun Lee

    IPC: H01L43/00 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 自由和被钉扎的层各自具有大于面外去磁能的垂直磁各向异性能的层。 钉扎层和自由层中的至少一个包括多层。 多层包括至少一个双层。 每个双层具有第一层和第二层。 第一层包括磁性过渡金属和稀土的合金。 第二层包括非晶磁性层。 多层具有至多四百摄氏度的非零垂直磁各向异性。

    METHOD AND SYSTEM FOR PROVIDING RARE EARTH MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS
    19.
    发明申请
    METHOD AND SYSTEM FOR PROVIDING RARE EARTH MAGNETIC JUNCTIONS USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS 有权
    用于提供转子转子磁性随机存取存储器应用中可用的稀土地磁接点的方法和系统

    公开(公告)号：US20160005956A1

    公开(公告)日：2016-01-07

    申请号：US14731267

    申请日：2015-06-04

    Applicant: Samsung Electronics Co., LTD.

    Inventor： Xueti Tang ,  Jangeun Lee

    IPC: H01L43/10 ,  H01L27/22 ,  H01L43/12

    CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  H01L43/08 ,  H01L43/12

    Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius.

    Abstract translation: 描述了可用于磁性装置的磁结和提供磁结的方法。 磁性结包括自由层，被钉扎层和位于游离层和被钉扎层之间的非磁性间隔层。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 自由和被钉扎的层各自具有大于面外去磁能的垂直磁各向异性能的层。 钉扎层和自由层中的至少一个包括多层。 多层包括至少一个双层。 每个双层具有第一层和第二层。 第一层包括磁性过渡金属和稀土的合金。 第二层包括非晶磁性层。 多层具有至多四百摄氏度的非零垂直磁各向异性。

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