公开(公告)号：US10763399B2

公开(公告)日：2020-09-01

申请号：US15684144

申请日：2017-08-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Gun Lee ,  Yong Il Kim ,  Young Soo Park ,  Jin Sub Lee ,  Wan Tae Lim

IPC: H01L33/12 ,  H01L33/46 ,  H01L27/15 ,  H01L33/50 ,  H01L25/075 ,  H01L33/44

Abstract: A light emitting device package includes a light emitting structure including a first light emitting cell, a second light emitting cell, and a third light emitting cell, each of the first to third light emitting cells including an active layer to emit light of a first wavelength in a first direction and being separated from each other in a second direction, orthogonal to the first direction, a first light adjusting portion including a first wavelength conversion layer in a first recess portion of the first light emitting cell, the first wavelength conversion layer to convert light of the first wavelength to light of a second wavelength, and a second light adjusting portion including a second wavelength conversion layer in a second recess portion of the second light emitting cell, the second wavelength conversion layer to convert light of the first wavelength to light of a third wavelength.

公开(公告)号：US10607877B2

公开(公告)日：2020-03-31

申请号：US15869405

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Lee ,  Han Kyu Seong ,  Yong Il Kim ,  Sung Hyun Sim ,  Dong gun Lee

IPC: H01L21/68 ,  H01L21/683 ,  H01L23/00 ,  H01L21/67 ,  H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01L21/66 ,  B23K26/00

Abstract: A chip mounting method includes providing a first substrate including a light transmissive substrate having first and second surfaces, a sacrificial layer provided on the first surface, and a plurality of chips bonded to the sacrificial layer, obtaining first mapping data by testing the chips, the first mapping data defining coordinates of normal chips and defective chips among the chips, disposing a second substrate below the first surface, disposing the normal chips on the second substrate by radiating a first laser beam to positions of the sacrificial layer corresponding to the coordinates of the normal chips, based on the first mapping data, to remove portions of the sacrificial layer thereby separating the normal chips from the light transmissive substrate, and mounting the normal chips on the second substrate by radiating a second laser beam to a solder layer of the second substrate.

公开(公告)号：US20190189876A1

公开(公告)日：2019-06-20

申请号：US15995546

申请日：2018-06-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Gun LEE ,  Yong II Kim ,  Han Kyu Seong ,  Ji Hye Yeon ,  Jin Sub Lee ,  Young Jin Choi

IPC: H01L33/62 ,  H01L33/44 ,  H01L25/075 ,  H01L33/50 ,  H01L33/60

Abstract: A light emitting device package including a cell array including first, second and third light emitting devices each including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, the cell array having a first surface and a second surface opposing the first surface, a light-transmissive substrate including a first wavelength conversion portion and a second wavelength conversion portion corresponding to the first light emitting device and the second light emitting device, respectively, and bonded to the first surface, and a eutectic bonding layer including a first light emitting window, a second light emitting window and a third light emitting window corresponding to the first light emitting device, the second light emitting device and the third light emitting device, respectively, and bonding the light-transmissive substrate and the first to third light emitting devices to each other may be provided.

公开(公告)号：US09941443B2

公开(公告)日：2018-04-10

申请号：US15063150

申请日：2016-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Sub Lee ,  Jung Sub Kim ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Dae Myung Chun ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/24 ,  H01L33/08 ,  H01L33/14 ,  H01L33/18 ,  H01L33/00 ,  H01L33/02 ,  H01L33/42 ,  H01L33/48 ,  H01L33/52

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

公开(公告)号：US09831378B2

公开(公告)日：2017-11-28

申请号：US15172976

申请日：2016-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Lee ,  Jung Sub Kim

IPC: H01L33/12 ,  H01L33/00 ,  H01L31/0236 ,  H01L21/02 ,  H01L33/22 ,  H01L33/04

CPC classification number: H01L33/005 ,  H01L21/02458 ,  H01L31/0236 ,  H01L33/04 ,  H01L33/12 ,  H01L33/22

Abstract: A method of manufacturing a semiconductor light emitting device is provided. The method includes forming a first region of a lower semiconductor layer on a substrate, etching an upper surface of the first region using at least one gas used in forming the first region, in-situ in a chamber in which a process of forming the first region has been performed, forming a second region of the lower semiconductor layer on the first region, forming an active layer on the lower semiconductor layer, and forming an upper semiconductor layer on the active layer.

公开(公告)号：US09312439B2

公开(公告)日：2016-04-12

申请号：US14454536

申请日：2014-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Sub Lee ,  Jung Sub Kim ,  Sam Mook Kang ,  Yeon Woo Seo ,  Han Kyu Seong ,  Dae Myung Chun ,  Young Jin Choi ,  Jae Hyeok Heo

IPC: H01L33/20 ,  H01L33/30 ,  H01L33/14 ,  H01L33/18 ,  H01L33/24 ,  H01L33/08

CPC classification number: H01L33/145 ,  H01L33/002 ,  H01L33/025 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L33/42 ,  H01L33/486 ,  H01L33/52 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Abstract translation: 提供一种半导体发光器件，其包括第一导电型半导体基底层和多个发光纳米结构，所述多个发光纳米结构在第一导电型半导体基底层上彼此间隔开，每个发光纳米结构包括第一导电性 型半导体芯，有源层，电荷阻挡层和第二导电型半导体层，其中第一导电型半导体芯在晶体学方向上具有不同的第一和第二晶体面。